公开(公告)号：US20160190123A1

公开(公告)日：2016-06-30

申请号：US14975761

申请日：2015-12-19

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Roman Baburske ,  Matteo Dainese ,  Christian Jaeger

IPC: H01L27/06 ,  H01L29/10 ,  H01L29/40 ,  H01L29/739

CPC classification number: H01L29/407 ,  H01L27/0825 ,  H01L27/0883 ,  H01L29/0619 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/7397 ,  H01L29/8613

Abstract: A semiconductor device includes transistor cells and enhancement cells. Each transistor cell includes a body zone that forms a first pn junction with a drift structure. The transistor cells may form, in the body zones, inversion channels when a first control signal exceeds a first threshold. The inversion channels form part of a connection between the drift structure and a first load electrode. A delay unit generates a second control signal which trailing edge is delayed with respect to a trailing edge of the first control signal. The enhancement cells form inversion layers in the drift structure when the second control signal falls below a second threshold lower than the first threshold. The inversion layers are effective as minority charge carrier emitters.

Abstract translation: 半导体器件包括晶体管单元和增强单元。 每个晶体管单元包括形成具有漂移结构的第一pn结的体区。 当第一控制信号超过第一阈值时，晶体管单元可以在体区中形成反向信道。 反向通道形成漂移结构和第一负载电极之间的连接的一部分。 延迟单元产生第二控制信号，该后沿相对于第一控制信号的后沿被延迟。 当第二控制信号低于低于第一阈值的第二阈值时，增强单元在漂移结构中形成反转层。 反转层作为少数电荷载流子发射体是有效的。

公开(公告)号：US20160056251A1

公开(公告)日：2016-02-25

申请号：US14814758

申请日：2015-07-31

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Anton Mauder ,  Matteo Dainese ,  Franz Hirler ,  Christian Jaeger ,  Maximillian Roesch ,  Wolfgang Roesner ,  Martin Stiftinger ,  Robert Strenz

IPC: H01L29/423 ,  H01L29/792 ,  H01L27/02 ,  H01L27/115 ,  H01L27/06

CPC classification number: H01L29/42344 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/0207 ,  H01L27/0623 ,  H01L27/11521 ,  H01L27/11556 ,  H01L27/11568 ,  H01L27/11573 ,  H01L27/11582 ,  H01L29/0619 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42324 ,  H01L29/4234 ,  H01L29/42376 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7803 ,  H01L29/7813 ,  H01L29/7883 ,  H01L29/792

Abstract: A semiconductor switching device includes a first load terminal electrically connected to source zones of transistor cells. The source zones form first pn junctions with body zones. A second load terminal is electrically connected to a drain construction that forms second pn junctions with the body zones. Control structures, which include a control electrode and charge storage structures, directly adjoin the body zones. The control electrode controls a load current through the body zones. The charge storage structures insulate the control electrode from the body zones and contain a control charge adapted to induce inversion channels in the body zones in the absence of a potential difference between the control electrode and the first load electrode.

Abstract translation: 半导体开关器件包括电连接到晶体管单元的源极区的第一负载端子。 源区与身体区形成第一个pn结。 第二负载端子电连接到与主体区域形成第二pn结的排水构造。 包括控制电极和电荷存储结构的控制结构直接与身体区相邻。 控制电极控制穿过身体区域的负载电流。 电荷存储结构将控制电极与体区绝缘，并且在控制电极和第一负载电极之间没有电位差的情况下，包含适于在体区中诱导反转通道的控制电荷。

公开(公告)号：US20150325688A1

公开(公告)日：2015-11-12

申请号：US14275193

申请日：2014-05-12

Applicant: Infineon Technologies AG

Inventor： Roman Baburske ,  Matteo Dainese ,  Peter Lechner ,  Hans-Joachim Schulze ,  Johannes Georg Laven

IPC: H01L29/739

CPC classification number: H01L29/7393 ,  H01L29/045 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66333 ,  H01L29/6634 ,  H01L29/66348 ,  H01L29/7395 ,  H01L29/7396 ,  H01L29/7397 ,  H01L29/8613 ,  H01L2924/13055

Abstract: A semiconductor device includes a semiconductor mesa with at least one body zone forming first pn junctions with source zones and a second pn junction with a drift zone. A pedestal layer at a side of the drift zone opposite to the at least one body zone includes first zones of a conductivity type of the at least one body zone and second zones of the conductivity type of the drift zone. Electrode structures are on opposite sides of the semiconductor mesa. At least one of the electrode structures includes a gate electrode controlling a charge carrier flow through the at least one body zone. In a separation region between two of the source zones (i) a capacitive coupling between the gate electrode and the semiconductor mesa or (ii) a conductivity of majority charge carriers of the drift zone is lower than outside of the separation region.

Abstract translation: 半导体器件包括具有与源区形成第一pn结的至少一个体区和具有漂移区的第二pn结的半导体台面。 与漂移区相对的至少一个体区的一侧的基座层包括至少一个体区的导电类型的第一区和漂移区的导电类型的第二区。 电极结构位于半导体台面的相对侧。 电极结构中的至少一个包括控制通过至少一个体区的电荷载流子的栅电极。 在两个源极区（i）之间的分离区域中，栅电极和半导体台面之间的电容耦合或（ii）漂移区的多数电荷载流子的电导率低于分离区的外部。

公开(公告)号：US20150325687A1

公开(公告)日：2015-11-12

申请号：US14275378

申请日：2014-05-12

Applicant: Infineon Technologies AG

Inventor： Roman Baburske ,  Matteo Dainese ,  Peter Lechner ,  Hans-Joachim Schulze ,  Johannes Georg Laven

IPC: H01L29/739 ,  H01L29/10 ,  H01L29/08 ,  H01L29/66

CPC classification number: H01L29/66348 ,  H01L21/02238 ,  H01L21/76224 ,  H01L29/045 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/0843 ,  H01L29/0865 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/6634 ,  H01L29/7395 ,  H01L29/7396 ,  H01L29/7397

Abstract: A semiconductor device includes a semiconductor mesa that includes at least one body zone forming first pn junctions with source zones and a second pn junction with a drift zone. Electrode structures are on opposite sides of the semiconductor mesa. At least one of the electrode structures includes a gate electrode configured to control a charge carrier flow through the at least one body zone. In a separation region between the source zones, which are arranged along an extension direction of the semiconductor mesa, the semiconductor mesa includes at least one partial or complete constriction.

Abstract translation: 半导体器件包括半导体台面，其包括与源极区形成第一pn结的至少一个体区和具有漂移区的第二pn结。 电极结构位于半导体台面的相对侧。 电极结构中的至少一个包括被配置为控制通过至少一个体区的电荷载流子的栅电极。 在沿着半导体台面的延伸方向布置的源区之间的分离区域中，半导体台面包括至少一个部分或完全的收缩。

公开(公告)号：US11610986B2

公开(公告)日：2023-03-21

申请号：US17350505

申请日：2021-06-17

Applicant: Infineon Technologies AG ,  Infineon Technologies Dresden GmbH & Co. KG

Inventor： Matteo Dainese ,  Alexander Philippou ,  Markus Beninger-Bina ,  Ingo Dirnstorfer ,  Erich Griebl ,  Christian Jaeger ,  Johannes Georg Laven ,  Caspar Leendertz ,  Frank Dieter Pfirsch

IPC: H01L29/00 ,  H01L29/739 ,  H01L29/06 ,  H01L29/10 ,  H01L29/40 ,  H01L29/66 ,  H01L29/423

Abstract: A power semiconductor switch includes an active cell region with a drift region, an edge termination region, and IGBT cells within the active cell region. Each IGBT cell includes trenches that extend into the drift region and laterally confine mesas. At least one control trench has a control electrode for controlling the load current. At least one dummy trench has a dummy electrode electrically coupled to the control electrode. At least one further trench has a further trench electrode. At least one active mesa is electrically connected to a first load terminal within the active cell region. Each control trench is arranged adjacent to no more than one active mesa. At least one inactive mesa is adjacent to the dummy trench. A cross-trench structure merges each control trench, dummy trench and further trench to each other. The cross-trench structure overlaps at least partially along a vertical direction with the trenches.

公开(公告)号：US11581428B2

公开(公告)日：2023-02-14

申请号：US17078620

申请日：2020-10-23

Applicant: Infineon Technologies AG

Inventor： Alexander Philippou ,  Markus Beninger-Bina ,  Matteo Dainese ,  Christian Jaeger ,  Johannes Georg Laven ,  Francisco Javier Santos Rodriguez ,  Antonio Vellei ,  Caspar Leendertz ,  Christian Philipp Sandow

IPC: H01L29/73 ,  H01L29/739 ,  H01L29/06 ,  H01L29/40 ,  H01L29/66 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423

Abstract: A power semiconductor device includes an active cell region with a drift region of a first conductivity type, a plurality of IGBT cells arranged within the active cell region, each of the IGBT cells includes at least one trench that extends into the drift, an edge termination region surrounding the active cell region, a transition region arranged between the active cell region and the edge termination region, at least some of the IGBT cells are arranged within or extend into the transition region, a barrier region of a second conductivity type, the barrier region is arranged within the active cell region and in contact with at least some of the trenches of the IGBT cells and does not extend into the transition region, and a first load terminal and a second load terminal, the power semiconductor device is configured to conduct a load current along a vertical direction between.

公开(公告)号：US20210257489A1

公开(公告)日：2021-08-19

申请号：US17307632

申请日：2021-05-04

Applicant: Infineon Technologies AG

Inventor： Anton Mauder ,  Hans-Joachim Schulze ,  Matteo Dainese ,  Elmar Falck ,  Franz-Josef Niedernostheide ,  Manfred Pfaffenlehner

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/40

Abstract: A semiconductor component includes a semiconductor body having opposing first surface and second surfaces, and a side surface surrounding the semiconductor body. The semiconductor component also includes an active region including a first semiconductor region of a first conductivity type, which is electrically contacted via the first surface, and a second semiconductor region of a second conductivity type, which is electrically contacted via the second surface. The semiconductor component further includes an edge termination region arranged in a lateral direction between the first semiconductor region of the active region and the side surface, and includes a first edge termination structure and a second edge termination structure. The second edge termination structure is arranged in the lateral direction between the first edge termination structure and the side surface and extends from the first surface in a vertical direction more deeply into the semiconductor body than the first edge termination structure.

公开(公告)号：US20210050436A1

公开(公告)日：2021-02-18

申请号：US17087678

申请日：2020-11-03

Applicant: Infineon Technologies AG

Inventor： Antonio Vellei ,  Markus Beninger-Bina ,  Matteo Dainese ,  Christian Jaeger ,  Johannes Georg Laven ,  Alexander Philippou ,  Francisco Javier Santos Rodriguez

IPC: H01L29/739 ,  H01L29/06 ,  H01L29/40 ,  H01L21/033 ,  H01L21/225 ,  H01L21/265 ,  H01L21/324 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

Abstract: A method of processing a power semiconductor device includes: providing a semiconductor body with a drift region of a first conductivity type; forming a plurality of trenches extending into the semiconductor body along a vertical direction and arranged adjacent to each other along a first lateral direction; providing a mask arrangement at the semiconductor body, the mask arrangement having a lateral structure according to which some of the trenches are exposed and at least one of the trenches is covered by the mask arrangement along the first lateral direction; forming, below bottoms of the exposed trenches, a plurality of doping regions of a second conductivity type complementary to the first conductivity type; removing the mask arrangement; and extending the plurality of doping regions in parallel to the first lateral direction such that the plurality of doping regions overlap and form a barrier region of the second conductivity type adjacent to the bottoms of the exposed trenches.

公开(公告)号：US10825906B2

公开(公告)日：2020-11-03

申请号：US15986034

申请日：2018-05-22

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Roman Baburske ,  Matteo Dainese ,  Christian Jaeger

IPC: H01L29/40 ,  H01L29/739 ,  H01L29/10 ,  H01L29/423 ,  H01L29/08 ,  H01L29/861 ,  H01L27/082 ,  H01L27/088 ,  H01L29/06 ,  H01L29/36

Abstract: A semiconductor device includes transistor cells and enhancement cells. Each transistor cell includes a body zone that forms a first pn junction with a drift structure. The transistor cells may form, in the body zones, inversion channels when a first control signal exceeds a first threshold. The inversion channels form part of a connection between the drift structure and a first load electrode. A delay unit generates a second control signal which trailing edge is delayed with respect to a trailing edge of the first control signal. The enhancement cells form inversion layers in the drift structure when the second control signal falls below a second threshold lower than the first threshold. The inversion layers are effective as minority charge carrier emitters.

公开(公告)号：US10304952B2

公开(公告)日：2019-05-28

申请号：US15989778

申请日：2018-05-25

Applicant: Infineon Technologies AG ,  Infineon Technologies Dresden GmbH

Inventor： Matteo Dainese ,  Alexander Philippou ,  Markus Bina ,  Ingo Dirnstorfer ,  Erich Griebl ,  Christian Jaeger ,  Johannes Georg Laven ,  Caspar Leendertz ,  Frank Dieter Pfirsch

IPC: H01L29/00 ,  H01L29/739 ,  H01L29/06 ,  H01L29/10 ,  H01L29/40 ,  H01L29/66 ,  H01L29/423

Abstract: A power semiconductor device includes an active region surrounded by an inactive termination region each formed by part of a semiconductor body. The active region conducts load current between first and second load terminals. At least one power cell has trenches extending into the semiconductor body adjacent to each other along a first lateral direction and having a stripe configuration that extends along a second lateral direction into the active region. The trenches spatially confine a plurality of mesas each having at least one first type mesa electrically connected to the first load terminal and configured to conduct at least a part of the load current, and at least one second type mesa configured to not conduct the load current. A decoupling structure separates at least one of the second type mesas into a first section in the active region and a second section in the termination region.