公开(公告)号：US07480203B2

公开(公告)日：2009-01-20

申请号：US12072109

申请日：2008-02-22

申请人： James Brian Johnson ,  Brent Keeth ,  Feng (Dan) Lin

发明人： James Brian Johnson ,  Brent Keeth ,  Feng (Dan) Lin

IPC分类号： G11C8/00 ,  H03L7/06

CPC分类号： G11C11/4076 ,  G11C7/22 ,  G11C7/222 ,  G11C11/4072 ,  G11C2207/2254 ,  H03L7/0812 ,  H03L7/095

摘要： A method of synchronizing counters in two different clock domains within a memory device is comprised of generating a start signal for initiating production of a running count of clock pulses of a read clock signal in a first counter downstream of a locked loop and delaying the input of the start signal to a second counter upstream of the locked loop to delay the initiation of a running count of control clock pulses by an amount equal to a predetermined delay. Another disclosed method is for controlling the output of data from a memory device comprising deriving from an external clock signal a control clock for operating an array of storage cells and a read clock, both the control clock and the read clock being comprised of clock pulses. A start signal is generated for initiating production of a running count of the read clock pulses in a first counter. The start signal may be produced when a locked loop achieves a lock between the read clock and the control clock. The input of the start signal to a second counter is delayed to delay the initiation of a running count of the control clock pulses. The delay, which may be expressed as an integer number of clock cycles, may be equal to an input/output delay of the memory device. The method may be modified by inputting the start signal to an offset counter before initiating the production of the running count of the read clock pulses in the first counter. The offset counter may be loaded with a value equal to a programmed latency less a synchronization overhead. Once the running counts are initiated, each time a read command is received, a then current value of the running count of control clock pulses from the second counter is latched or held. The held value is compared to the running count of read clock pulses from the first counter, with the read clock signal being used to output data in response to the comparison. Apparatus for implementing the disclosed methods are also disclosed. Because of the rules governing abstracts, this abstract should not be used to construe the claims.

公开(公告)号：US20080089158A1

公开(公告)日：2008-04-17

申请号：US11999383

申请日：2007-12-04

申请人： Brent Keeth ,  Brian Johnson ,  Troy Manning

发明人： Brent Keeth ,  Brian Johnson ,  Troy Manning

IPC分类号： G11C7/00

CPC分类号： G11C7/1072 ,  G11C7/1006 ,  G11C7/1018 ,  G11C7/1027 ,  G11C7/1045 ,  G11C7/1048 ,  G11C7/1051 ,  G11C7/106 ,  G11C7/1066 ,  G11C7/1069 ,  G11C7/1078 ,  G11C11/4093 ,  G11C11/4096 ,  G11C2207/107

摘要： A memory device is operable in either a high mode or a low speed mode. In either mode, 32 bits of data from each of two memory arrays are prefetched into respective sets of 32 flip-flops. In the high-speed mode, the prefetched data bits are transferred in parallel to 4 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 4 data bus terminals. In the low speed mode, two sets of prefetched data bits are transferred in parallel to 8 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 8 data bus terminals.

摘要翻译： 存储器件可以在高模式或低速模式下操作。 在任一模式中，来自两个存储器阵列中的每一个的32位数据被预取到相应的32个触发器组中。 在高速模式下，预取数据位并行传输到4个并行到串行转换器，它们将并行数据位转换为8个串行数据位的脉冲串，并将该脉冲串应用于4个数据总线 终端。 在低速模式下，两组预取数据位并行传送到8个并行到串行转换器，它们将并行数据位转换为8个串行数据位的脉冲串，并将该脉冲串应用于8个数据中的相应一个 巴士总站。

公开(公告)号：US07355922B2

公开(公告)日：2008-04-08

申请号：US11429856

申请日：2006-05-08

申请人： James Brian Johnson ,  Brent Keeth ,  Feng (Dan) Lin

发明人： James Brian Johnson ,  Brent Keeth ,  Feng (Dan) Lin

IPC分类号： G11C8/00 ,  H03L7/06

CPC分类号： G11C11/4076 ,  G11C7/22 ,  G11C7/222 ,  G11C11/4072 ,  G11C2207/2254 ,  H03L7/0812 ,  H03L7/095

摘要： A method of synchronizing counters in two different clock domains within a memory device is comprised of generating a start signal for initiating production of a running count of clock pulses of a read clock signal in a first counter downstream of a locked loop and delaying the input of the start signal to a second counter upstream of the locked loop to delay the initiation of a running count of control clock pulses by an amount equal to a predetermined delay. Another disclosed method is for controlling the output of data from a memory device comprising deriving from an external clock signal a control clock for operating an array of storage cells and a read clock, both the control clock and the read clock being comprised of clock pulses. A start signal is generated for initiating production of a running count of the read clock pulses in a first counter. The start signal may be produced when a locked loop achieves a lock between the read clock and the control clock. The input of the start signal to a second counter is delayed to delay the initiation of a running count of the control clock pulses. The delay, which may be expressed as an integer number of clock cycles, may be equal to an input/output delay of the memory device. The method may be modified by inputting the start signal to an offset counter before initiating the production of the running count of the read clock pulses in the first counter. The offset counter may be loaded with a value equal to a programmed latency less a synchronization overhead. Once the running counts are initiated, each time a read command is received, a then current value of the running count of control clock pulses from the second counter is latched or held. The held value is compared to the running count of read clock pulses from the first counter, with the read clock signal being used to output data in response to the comparison. Apparatus for implementing the disclosed methods are also disclosed. Because of the rules governing abstracts, this abstract should not be used to construe the claims.

公开(公告)号：US20080037342A1

公开(公告)日：2008-02-14

申请号：US11876477

申请日：2007-10-22

申请人： Chris Martin ,  Troy Manning ,  Brent Keeth

发明人： Chris Martin ,  Troy Manning ,  Brent Keeth

IPC分类号： G11C7/00 ,  G11C17/18

CPC分类号： G11C17/165 ,  G11C29/4401 ,  G11C29/789 ,  G11C29/802 ,  G11C29/808 ,  G11C2029/4402

摘要： An apparatus and method for repairing a semiconductor memory device includes a first memory cell array, a first redundant cell array and a repair circuit configured to nonvolatilely store a first address designating at least one defective memory cell in the first memory cell array. A first volatile cache stores a first cached address corresponding to the first address designating the at least one defective memory cell. The repair circuit distributes the first address designating the at least one defective memory cell of the first memory cell array to the first volatile cache. Match circuitry substitutes at least one redundant memory cell from the first redundant cell array for the at least one defective memory cell in the first memory cell array when a first memory access corresponds to the first cached address.

摘要翻译： 用于修复半导体存储器件的装置和方法包括：第一存储单元阵列，第一冗余单元阵列和修复电路，被配置为在第一存储单元阵列中非易失性地存储指定至少一个有缺陷的存储单元的第一地址。 第一易失性高速缓存存储对应于指定所述至少一个有缺陷的存储器单元的第一地址的第一高速缓存地址。 修复电路将指定第一存储单元阵列的至少一个缺陷存储单元的第一地址分配给第一易失性高速缓存。 当第一存储器访问对应于第一缓存地址时，匹配电路将来自第一冗余单元阵列的至少一个冗余存储单元替换为第一存储单元阵列中的至少一个有缺陷的存储单元。

公开(公告)号：US20070153595A1

公开(公告)日：2007-07-05

申请号：US11714979

申请日：2007-03-07

申请人： Chris Martin ,  Troy Manning ,  Brent Keeth

发明人： Chris Martin ,  Troy Manning ,  Brent Keeth

IPC分类号： G11C29/00

CPC分类号： G11C17/165 ,  G11C29/4401 ,  G11C29/789 ,  G11C29/802 ,  G11C29/808 ,  G11C2029/4402

摘要： An apparatus and method for repairing a semiconductor memory device includes a first memory cell array, a first redundant cell array and a repair circuit configured to nonvolatilely store a first address designating at least one defective memory cell in the first memory cell array. A first volatile cache stores a first cached address corresponding to the first address designating the at least one defective memory cell. The repair circuit distributes the first address designating the at least one defective memory cell of the first memory cell array to the first volatile cache. Match circuitry substitutes at least one redundant memory cell from the first redundant cell array for the at least one defective memory cell in the first memory cell array when a first memory access corresponds to the first cached address.

公开(公告)号：US20070152743A1

公开(公告)日：2007-07-05

申请号：US11715112

申请日：2007-03-07

申请人： Brent Keeth ,  Layne Bunker ,  Raymond Beffa ,  Frank Ross

发明人： Brent Keeth ,  Layne Bunker ,  Raymond Beffa ,  Frank Ross

IPC分类号： G05F1/10

CPC分类号： G11C5/063 ,  G11C5/025 ,  G11C5/145 ,  G11C5/147 ,  G11C11/401 ,  G11C11/4074 ,  G11C11/4076 ,  G11C11/4097 ,  G11C11/4099 ,  G11C29/021 ,  G11C29/028 ,  G11C29/12 ,  G11C29/12005 ,  G11C29/46 ,  G11C29/787 ,  G11C2029/0407 ,  H01L27/10805 ,  H01L2224/4826 ,  H01L2224/73215 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/00

摘要： A 256 Meg dynamic random access memory is comprised of a plurality of cells organized into individual arrays, with the arrays being organized into 32 Meg array blocks, which are organized into 64 Meg quadrants. Sense amplifiers are positioned between adjacent rows in the individual arrays while row decoders are positioned between adjacent columns in the individual arrays. In certain of the gap cells, multiplexers are provided to transfer signals from I/O lines to datalines. A data path is provided which, in addition to the foregoing, includes array I/O blocks, responsive to the datalines from each quadrant to output data to a data read mux, data buffers, and data driver pads. The write data path includes a data in buffer and data write muxes for providing data to the array I/O blocks. A power bus is provided which minimizes routing of externally supplied voltages, completely rings each of the array blocks, and provides gridded power distribution within each of the array blocks. A plurality of voltage supplies provide the voltages needed in the array and in the peripheral circuits. The power supplies are organized to match their power output to the power demand and to maintain a desired ratio of power production capability and decoupling capacitance. A powerup sequence circuit is provided to control the powerup of the chip. Redundant rows and columns are provided as is the circuitry necessary to logically replace defective rows and columns with operational rows and columns. Circuitry is also provided on chip to support various types of test modes.

公开(公告)号：US07155561B2

公开(公告)日：2006-12-26

申请号：US11230836

申请日：2005-09-19

申请人： Brent Keeth ,  Brian M. Shirley ,  Charles H. Dennison

发明人： Brent Keeth ,  Brian M. Shirley ,  Charles H. Dennison

IPC分类号： G06F12/16

CPC分类号： G06F12/0893 ,  G06F12/0846 ,  G06F12/0897 ,  G11C7/1006 ,  G11C7/1042 ,  G11C11/406 ,  G11C11/409 ,  G11C15/043

摘要： A cache memory system and method includes a DRAM having a plurality of banks, and it also includes 2 SRAMs each having a capacity that is equal to the capacity of each bank of the DRAM. In operation, data read from a bank of the DRAM are stored in one of the SRAMs so that repeated hits to that bank are cached by reading from the SRAM. In the event of a write to a bank that is being refreshed, the write data are stored in one of the SRAMs. After the refresh of the bank has been completed, the data stored in the SRAM are transferred to the DRAM bank. A subsequent read or write to a second DRAM bank undergoing refresh and occurring during the transfer of data from an SRAM to the DRAM is stored in either the second bank or the other SRAM.

摘要翻译： 高速缓冲存储器系统和方法包括具有多个存储体的DRAM，并且还包括2个SRAM，每个SRAM的容量等于DRAM的每个存储体的容量。 在操作中，从DRAM的存储体读出的数据被存储在一个SRAM中，从而通过从SRAM读取来缓存对该存储体的重复命中。 在写入正在刷新的存储体的情况下，写入数据被存储在一个SRAM中。 在银行刷新完成之后，存储在SRAM中的数据被传送到DRAM存储体。 在从SRAM到DRAM的数据传输期间经历刷新并发生的第二DRAM组的后续读或写存储在第二存储体或其它SRAM中。

公开(公告)号：US20060265565A1

公开(公告)日：2006-11-23

申请号：US11495418

申请日：2006-07-28

申请人： Joo Choi ,  Troy Manning ,  Brent Keeth

发明人： Joo Choi ,  Troy Manning ,  Brent Keeth

IPC分类号： G06F13/00

CPC分类号： G11C11/4076 ,  G06F12/0207 ,  G06F13/1668 ,  G11C7/1072 ,  G11C7/1078 ,  G11C7/109 ,  G11C11/408 ,  G11C11/409

摘要： A technique to increase transfer rate of command and address signals via a given number of command and address pins in each of one or more integrated circuit memory devices during a clock cycle of a clock signal. In one example embodiment, the command and address signals are sent on both rising and falling edges of a clock cycle of a clock signal to increase the transfer rate and essentially reduce the number of required command and address pins in each integrated circuit memory device.

公开(公告)号：US20060045206A1

公开(公告)日：2006-03-02

申请号：US10930543

申请日：2004-08-30

申请人： Brent Keeth ,  Joo Choi ,  George Pax ,  Ronnie Harrison ,  David Ovard ,  Dragos Dimitriu ,  Troy Manning ,  Roy Greeff ,  Greg King ,  Brian Johnson

发明人： Brent Keeth ,  Joo Choi ,  George Pax ,  Ronnie Harrison ,  David Ovard ,  Dragos Dimitriu ,  Troy Manning ,  Roy Greeff ,  Greg King ,  Brian Johnson

IPC分类号： H04L27/06

CPC分类号： H04L25/062

摘要： A method and system for generating a reference voltage for memory device signal receivers operates in either a calibration mode or a normal operating mode. In the calibration mode, the magnitude of the reference voltage is incrementally varied, and a digital signal pattern is coupled to the receiver at each reference voltage. An output of the receiver is analyzed to determine if the receiver can accurately pass the signal pattern at each reference voltage level. A range of reference voltages that allow the receiver to accurately pass the signal pattern is recorded, and a final reference voltage is calculated at the approximate midpoint of the range. This final reference voltage is applied to the receiver during normal operation.

公开(公告)号：US06948027B2

公开(公告)日：2005-09-20

申请号：US10815877

申请日：2004-03-30

申请人： Brent Keeth ,  Brian M. Shirley ,  Charles H. Dennison ,  Kevin J. Ryan

发明人： Brent Keeth ,  Brian M. Shirley ,  Charles H. Dennison ,  Kevin J. Ryan

IPC分类号： G11C7/10 ,  G11C11/406 ,  G11C11/409 ,  G11C15/04 ,  G06F12/00

CPC分类号： G06F12/0893 ,  G06F12/0846 ,  G06F12/0897 ,  G11C7/1006 ,  G11C7/1042 ,  G11C11/406 ,  G11C11/409 ,  G11C15/043

摘要： A cache memory system and method includes a DRAM having a plurality of banks, and it also includes 2 SRAMs each having a capacity that is equal to the capacity of each bank of the DRAM. In operation, data read from a bank of the DRAM are stored in one of the SRAMs so that repeated hits to that bank are cached by reading from the SRAM. In the event of a write to a bank that is being refreshed, the write data are stored in one of the SRAMs. After the refresh of the bank has been completed, the data stored in the SRAM are transferred to the DRAM bank. A subsequent read or write to a second DRAM bank undergoing refresh and occurring during the transfer of data from an SRAM to the DRAM is stored in either the second bank or the other SRAM.