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424 条记录 (耗时 0.04 秒)

    Multilayered structures comprising magnetic nano-oxide layers for current perpindicular to plane GMR heads
    41.
    发明授权
    Multilayered structures comprising magnetic nano-oxide layers for current perpindicular to plane GMR heads 失效
    包括磁性纳米氧化物层的多层结构，用于与平面GMR头垂直

    公开(公告)号：US06888703B2

    公开(公告)日：2005-05-03

    申请号：US09953539

    申请日：2001-09-17

    申请人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

    发明人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

    IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01F41/14 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    CPC分类号： H01F41/302 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272

    摘要： Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

    摘要翻译： 提供基于纳米氧化物的电流 - 垂直平面（CPP）磁阻（MR）传感器堆叠，以及用于形成这种堆叠的方法。 相对于完全由金属层制成的CPP叠层，这种堆叠具有增加的电阻和增强的磁阻特性。 通过在铁磁层和非磁性间隔层之间插入磁性纳米氧化物层来提供所述增强的性质，由此所述纳米氧化物层增加电阻并显示自旋过滤性质。 提供了各种类型的CPP传感器堆叠，其中都具有形成在其中的纳米氧化物层，包括自旋阀型和合成反铁磁性钉扎层型旋转阀型。 所述堆叠也可以彼此形成以提供不同类型的叠层。

    CPP GMR device with inverse GMR material
    44.
    发明授权
    CPP GMR device with inverse GMR material 失效
    具有反向GMR材料的CPP GMR器件

    公开(公告)号：US06683762B2

    公开(公告)日：2004-01-27

    申请号：US10167857

    申请日：2002-06-11

    申请人： Min Li ,  Simon Liao ,  Kochan Ju

    发明人： Min Li ,  Simon Liao ,  Kochan Ju

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3272 ,  H01F41/302

    摘要： Pinned layers that are synthetically, rather than directly, pinned are desirable for a Current Perpendicular to Plane Spin Valve structure because they are more stable. However, this comes at the cost or reduced performance. The present invention solves this problem by modifying the composition of AP2. AP2 is the antiparallel layer that contacts the antiferromagnetic layer (AP1 being in contact with the pinned layer). Said modification comprises the addition of chromium or vanadium to AP2. Examples of alloys suitable for use in AP2 include NiFeCr, NiCr, CoCr, CoFeCr, and CoFeV. Additionally, the ruthenium layer normally used to effect antiferromagnetic coupling between AP1 and AP2, is replaced by a layer of chromium. The resulting structure exhibits the stability of the synthetic pin unit and the performance of the direct pin unit.

    摘要翻译： 对于垂直于平面旋转阀结构的电流而言，合成而不是直接固定的固定层是理想的，因为它们更稳定。 然而，这是成本或降低的性能。 本发明通过改变AP2的组成来解决这个问题。 AP2是与反铁磁层（AP1与被钉扎层接触）接触的反向平行层。 所述改性包括向AP2中加入铬或钒。 适用于AP2的合金的实例包括NiFeCr，NiCr，CoCr，CoFeCr和CoFeV。 此外，通常用于实现AP1和AP2之间的反铁磁耦合的钌层被一层铬替代。 所得到的结构表现出合成销单元的稳定性和直销销单元的性能。

    Spin valve structure design with laminated free layer
    46.
    发明授权
    Spin valve structure design with laminated free layer 失效
    自旋阀结构设计采用层压自由层

    公开(公告)号：US06392853B1

    公开(公告)日：2002-05-21

    申请号：US09489973

    申请日：2000-01-24

    申请人： Min Li ,  Simon H. Liao ,  Cheng T. Horng ,  Youfeng Zheng ,  Ru-Ying Tong ,  Kochan Ju

    发明人： Min Li ,  Simon H. Liao ,  Cheng T. Horng ,  Youfeng Zheng ,  Ru-Ying Tong ,  Kochan Ju

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G01R33/096 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3268 ,  H01F10/3295 ,  H01L43/08 ,  Y10T428/1121 ,  Y10T428/12465 ,  Y10T428/26

    摘要： The giant magnetoresistance (GMR) effect includes a contribution that is due to anisotropic magnetoresistance (AMR). Unfortunately the AMR effect tends to degrade the peak-to-peak signal asymmetry. Additionally, a high AMR/GMR ratio causes a larger signal asymmetry variation. It is therefor desirable to reduce both the AMR contribution as well as the AMR/GMR ratio. This has been achieved by modifying the free layer through the insertion of an extra layer of a highly resistive or insulating material at approximately mid thickness level. This layer is from 3 to 15 Angstroms thick and serves to reduce the Anisotropic Magneto-resistance contribution to the total magneto-resistance of the device. This reduces the GMR contribution only slightly but cuts the AMR/GMR ratio in half, thereby improving cross-track asymmetry and signal linearity.

    摘要翻译： 巨磁电阻（GMR）效应包括归因于各向异性磁阻（AMR）。 不幸的是，AMR效应趋于降低峰 - 峰信号不对称性。 另外，高AMR / GMR比率导致更大的信号不对称变化。 因此，减少AMR贡献以及AMR / GMR比值是有希望的。 这已经通过在大约中等厚度水平上插入高电阻或绝缘材料的额外层来修饰自由层来实现。 该层厚度为3至15埃，用于降低各向异性磁阻对器件的总磁阻的贡献。 这仅略微降低了GMR贡献，但将AMR / GMR比率降低了一半，从而提高了交叉磁道不对称性和信号线性度。

    Synthetic free layer for CPP GMR
    49.
    发明授权
    Synthetic free layer for CPP GMR 失效
    CPP GMR的合成自由层

    公开(公告)号：US07130168B2

    公开(公告)日：2006-10-31

    申请号：US11229155

    申请日：2005-09-16

    申请人： Min Li ,  Simon Liao ,  Kochan Ju

    发明人： Min Li ,  Simon Liao ,  Kochan Ju

    IPC分类号： G11B5/33

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3272 ,  H01F41/302 ,  H01L43/10

    摘要： Reduction of the free layer thickness in GMR devices is desirable in order to meet higher signal requirements, besides improving the GMR ratio itself. However, thinning of the free layer reduces the GMR ratio and leads to poor thermal stability. This problem has been overcome by making AP2 from an inverse GMR material and by changing the free layer from a single uniform layer to a ferromagnetic layer AFM (antiferromagnetically) coupled to a layer of inverse GMR material. Examples of alloys that may be used for the inverse GMR materials include FeCr, NiFeCr, NiCr, CoCr, CoFeCr, and CoFeV. Additionally, the ruthenium layer normally used to effect antiferromagnetic coupling can be replaced by a layer of chromium. A process to manufacture the structure is also described.

    摘要翻译： 为了满足更高的信号要求，除了改善GMR比率本身外，希望降低GMR器件中的自由层厚度。 然而，自由层的减薄降低了GMR比并导致差的热稳定性。 通过从反GMR材料制备AP 2并通过将自由层从单个均匀层改变为耦合到反向GMR材料层的铁磁层AFM（反铁磁性）而已经克服了该问题。 可用于逆GMR材料的合金的实例包括FeCr，NiFeCr，NiCr，CoCr，CoFeCr和CoFeV。 此外，通常用于实现反铁磁耦合的钌层可以被铬层代替。 还描述了制造该结构的方法。