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    Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles
    43.
    发明授权
    Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles 有权
    制作碳纳米管薄膜，层，织物，丝带，元件和制品的方法

    公开(公告)号：US07566478B2

    公开(公告)日：2009-07-28

    申请号：US10341005

    申请日：2003-01-13

    申请人： Jonathan W. Ward ,  Thomas Rueckes ,  Brent M. Segal

    发明人： Jonathan W. Ward ,  Thomas Rueckes ,  Brent M. Segal

    IPC分类号： C23C16/26 ,  B05D5/12 ,  B05D3/00

    CPC分类号： B82Y40/00 ,  B82Y10/00 ,  B82Y30/00 ,  C01B32/162 ,  C01B2202/02 ,  C01B2202/22 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/16 ,  G11C2213/81 ,  H01L21/76838 ,  H01L2221/1094 ,  Y10S977/843

    摘要： Methods of Making Carbon Nanotube Films, Layers, Fabrics, Ribbons, Elements and Articles are disclosed. Carbon nanotube growth catalyst is applied on to a surface of a substrate. The substrate is subjected to a chemical vapor deposition of a carbon-containing gas to grow a non-woven fabric of carbon nanotubes. Portions of the non-woven fabric are selectively removed according to a defined pattern to create the article. A non-woven fabric of carbon nanotubes may be made by applying carbon nanotube growth catalyst on to a surface of a wafer substrate to create a dispersed monolayer of catalyst. The substrate is subjected to a chemical vapor deposition of a carbon-containing gas to grow a non-woven fabric of carbon nanotubes in contact and covering the surface of the wafer and in which the fabric is substantially uniform density.

    摘要翻译： 公开了制备碳纳米管薄膜，层，织物，丝带，元件和制品的方法。 将碳纳米管生长催化剂施加到基材的表面上。 对基板进行化学气相沉积的含碳气体以生长碳纳米管的无纺织物。 根据限定的图案选择性地去除无纺织物的部分以产生制品。 碳纳米管的无纺布可以通过将碳纳米管生长催化剂涂覆在晶片基板的表面上来制造催化剂的分散单层。 对基板进行化学气相沉积的含碳气体，使碳纳米管的无纺织物接触并覆盖晶片的表面，其中织物的密度基本上均匀。

    Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
    44.
    发明授权
    Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles 有权
    使用薄金属层制造碳纳米管薄膜，层，织物，丝带，元件和制品的方法

    公开(公告)号：US07560136B2

    公开(公告)日：2009-07-14

    申请号：US10341055

    申请日：2003-01-13

    申请人： Jonathan W. Ward ,  Thomas Rueckes ,  Brent M. Segal

    发明人： Jonathan W. Ward ,  Thomas Rueckes ,  Brent M. Segal

    IPC分类号： C23C16/22 ,  C23C16/00

    CPC分类号： H01L21/3146 ,  B82Y10/00 ,  H01L29/43 ,  Y10S977/742 ,  Y10S977/75 ,  Y10S977/751

    摘要： Methods of using thin metal layers to make Carbon Nanotube Films, Layers, Fabrics, Ribbons, Elements and Articles are disclosed. Carbon nanotube growth catalyst is applied on to a surface of a substrate, including one or more thin layers of metal. The substrate is subjected to a chemical vapor deposition of a carbon-containing gas to grow a non-woven fabric of carbon nanotubes. Portions of the non-woven fabric are selectively removed according to a defined pattern to create the article. A non-woven fabric of carbon nanotubes may be made by applying carbon nanotube growth catalyst on to a surface of a wafer substrate to create a dispersed monolayer of catalyst. The substrate is subjected to a chemical vapor deposition of a carbon-containing gas to grow a non-woven fabric of carbon nanotubes in contact and covering the surface of the wafer and in which the fabric is substantially uniform density.

    摘要翻译： 公开了使用薄金属层制造碳纳米管薄膜，层，织物，丝带，元件和制品的方法。 将碳纳米管生长催化剂施加到基材的表面，包括一层或多层薄金属层。 对基板进行化学气相沉积的含碳气体以生长碳纳米管的无纺织物。 根据限定的图案选择性地去除无纺织物的部分以产生制品。 碳纳米管的无纺布可以通过将碳纳米管生长催化剂涂覆在晶片基板的表面上来制造催化剂的分散单层。 对基板进行化学气相沉积的含碳气体，使碳纳米管的无纺织物接触并覆盖晶片的表面，其中织物的密度基本上均匀。

    METHOD OF FORMING A CARBON NANOTUBE-BASED CONTACT TO SEMICONDUCTOR
    45.
    发明申请
    METHOD OF FORMING A CARBON NANOTUBE-BASED CONTACT TO SEMICONDUCTOR 有权
    基于碳纳米管的接触到半导体的方法

    公开(公告)号：US20090173964A1

    公开(公告)日：2009-07-09

    申请号：US11708929

    申请日：2007-02-21

    申请人： Jonathan W. Ward ,  Benjamin Schlatka ,  Mitchell Meinhold ,  Robert F. Smith ,  Brent M. Segal

    发明人： Jonathan W. Ward ,  Benjamin Schlatka ,  Mitchell Meinhold ,  Robert F. Smith ,  Brent M. Segal

    IPC分类号： H01L33/00 ,  B32B15/04 ,  B32B9/00 ,  H01L21/44

    CPC分类号： H01L33/40 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/417 ,  H01L29/452 ,  H01L33/32 ,  Y10S438/924 ,  Y10T428/30 ,  Y10T428/31678

    摘要： Manufacturers encounter limitations in forming low resistance ohmic electrical contact to semiconductor material P-type Gallium Nitride (p-GaN), commonly used in photonic applications, such that the contact is highly transparent to the light emission of the device. Carbon nanotubes (CNTs) can address this problem due to their combined metallic and semiconducting characteristics in conjunction with the fact that a fabric of CNTs has high optical transparency. The physical structure of the contact scheme is broken down into three components, a) the GaN, b) an interface material and c) the metallic conductor. The role of the interface material is to make suitable contact to both the GaN and the metal so that the GaN, in turn, will make good electrical contact to the metallic conductor that interfaces the device to external circuitry. A method of fabricating contact to GaN using CNTs and metal while maintaining protection of the GaN surface is provided.

    摘要翻译： 制造商在与通常用于光子应用的半导体材料P型氮化镓（p-GaN）形成低电阻欧姆电接触方面遇到限制，使得接触对器件的发光是高度透明的。 碳纳米管（CNT）由于其组合的金属和半导体特性以及CNT的织物具有高的光学透明度的事实，可以解决这个问题。 接触方案的物理结构分为三个部分：a）GaN，b）界面材料和c）金属导体。 界面材料的作用是使GaN和金属两者适当地接触，这样GaN又将与将器件与外部电路接口的金属导体进行良好的电接触。 提供了一种使用CNT和金属制造与GaN接触的方法，同时保持了GaN表面的保护。

    Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
    46.
    发明授权
    Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles 有权
    使用预制纳米管制造碳纳米管薄膜，层，织物，丝带，元件和制品的方法

    公开(公告)号：US07335395B2

    公开(公告)日：2008-02-26

    申请号：US10341054

    申请日：2003-01-13

    申请人： Jonathan W. Ward ,  Thomas Rueckes ,  Brent M. Segal

    发明人： Jonathan W. Ward ,  Thomas Rueckes ,  Brent M. Segal

    IPC分类号： B05D3/12

    CPC分类号： B05D1/002 ,  B05D3/0254 ,  B82Y30/00 ,  C23C16/0281 ,  C23C16/26 ,  D04H1/4234 ,  D04H1/4242 ,  D04H1/4382 ,  D04H1/4391

    摘要： Methods of Using Preformed Nanotubes to Make Carbon Nanotube Films, Layers, Fabrics, Ribbons, Elements and Articles are disclosed. To make various articles, certain embodiments provide a substrate. Preformed nanotubes are applied to a surface of the substrate to create a non-woven fabric of carbon nanotubes. Portions of the non-woven fabric are selectively removed according to a defined pattern to create the article. To make a nanofabric, a substrate is provided. Preformed nanotubes are applied to a surface of the substrate to create a non-woven fabric of carbon nanotubes wherein the non-woven fabric is substantially uniform density.

    摘要翻译： 公开了使用预制纳米管制备碳纳米管膜，层，织物，丝带，元件和制品的方法。 为了制造各种制品，某些实施方案提供了基材。 将预制的纳米管施加到基底的表面以产生碳纳米管的无纺织物。 根据限定的图案选择性地去除无纺织物的部分以产生制品。 为了制造纳米纤维，提供了基材。 将预制的纳米管施加到基底的表面以产生碳纳米管的无纺织物，其中无纺织物具有基本均匀的密度。

    Devices having horizontally-disposed nanofabric articles and methods of making the same
    47.
    发明授权
    Devices having horizontally-disposed nanofabric articles and methods of making the same 有权
    具有水平布置的纳米制品的装置及其制造方法

    公开(公告)号：US07304357B2

    公开(公告)日：2007-12-04

    申请号：US11193795

    申请日：2005-07-29

    申请人： Venkatachalam C. Jaiprakash ,  Jonathan W. Ward ,  Thomas Rueckes ,  Brent M. Segal

    发明人： Venkatachalam C. Jaiprakash ,  Jonathan W. Ward ,  Thomas Rueckes ,  Brent M. Segal

    IPC分类号： H01L29/84

    CPC分类号： G11C13/025 ,  B81B2203/0338 ,  B81B2203/04 ,  B81C1/00142 ,  B81C2201/0109 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/02 ,  C01B2202/22 ,  G11C11/56 ,  G11C23/00 ,  G11C2213/16 ,  G11C2213/77 ,  G11C2213/81 ,  H01H1/0094 ,  H01L21/76838 ,  H01L51/0048 ,  H01L2221/1094 ,  Y10S977/724 ,  Y10S977/734 ,  Y10S977/742

    摘要： New devices having horizontally-disposed nanofabric articles and methods of making same are described. A discrete electro-mechanical device includes a structure having an electrically-conductive trace. A defined patch of nanotube fabric is disposed in spaced relation to the trace; and the defined patch of nanotube fabric is electromechanically deflectable between a first and second state. In the first state, the nanotube article is in spaced relation relative to the trace, and in the second state the nanotube article is in contact with the trace. A low resistance signal path is in electrical communication with the defined patch of nanofabric. Under certain embodiments, the structure includes a defined gap into which the electrically conductive trace is disposed. The defined gap has a defined width, and the defined patch of nanotube fabric spans the gap and has a longitudinal extent that is slightly longer than the defined width of the gap. Under certain embodiments, a clamp is disposed at each of two ends of the nanotube fabric segment and disposed over at least a portion of the nanotube fabric segment substantially at the edges defining the gap. Under certain embodiments, the clamp is made of electrically-conductive material. Under certain embodiments, the contact between the nanotube patch and the trace is a non-volatile state. Under certain embodiments, the contact between the nanotube patch and the trace is a volatile state. Under certain embodiments, the at least one electrically conductive trace has an interface material to alter the attractive force between the nanotube fabric segment and the electrically conductive trace.

    摘要翻译： 描述了具有水平布置的纳米制品的新器件及其制造方法。 分立的机电装置包括具有导电迹线的结构。 定义的纳米管织物贴片与痕迹间隔开设置; 并且所述限定的纳米管织物片在第一和第二状态之间是机电偏转的。 在第一状态下，纳米管制品相对于迹线具有间隔的关系，并且在第二状态下，纳米管制品与痕迹接触。 低电阻信号路径与所定义的纳米片段电连通。 在某些实施例中，该结构包括限定的导电迹线设置的间隙。 限定的间隙具有限定的宽度，并且限定的纳米管织物片段跨过间隙并且具有比限定的间隙宽度稍长的纵向范围。 在某些实施例中，夹具设置在纳米管织物片段的两端中的每一个处，并且在纳米管织物片段的至少一部分上大致位于限定间隙的边缘处。 在某些实施例中，夹具由导电材料制成。 在某些实施方案中，纳米管贴片和迹线之间的接触是非挥发性状态。 在某些实施方案中，纳米管贴片和迹线之间的接触是挥发性状态。 在某些实施例中，至少一个导电迹线具有界面材料，以改变纳米管织物片段和导电迹线之间的吸引力。

    Devices having horizontally-disposed nanofabric articles and methods of making the same
    48.
    发明授权
    Devices having horizontally-disposed nanofabric articles and methods of making the same 有权
    具有水平布置的纳米制品的装置及其制造方法

    公开(公告)号：US07259410B2

    公开(公告)日：2007-08-21

    申请号：US10776059

    申请日：2004-02-11

    申请人： Venkatachalam C. Jaiprakash ,  Jonathan W. Ward ,  Thomas Rueckes ,  Brent M. Segal

    发明人： Venkatachalam C. Jaiprakash ,  Jonathan W. Ward ,  Thomas Rueckes ,  Brent M. Segal

    IPC分类号： H01L27/10

    CPC分类号： G11C13/025 ,  B81B2203/0338 ,  B81B2203/04 ,  B81C1/00142 ,  B81C2201/0109 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/02 ,  C01B2202/22 ,  G11C11/56 ,  G11C23/00 ,  G11C2213/16 ,  G11C2213/77 ,  G11C2213/81 ,  H01H1/0094 ,  H01L21/76838 ,  H01L51/0048 ,  H01L2221/1094 ,  Y10S977/724 ,  Y10S977/734 ,  Y10S977/742

    摘要： New devices having horizontally-disposed nanofabric articles and methods of making same are described. A discrete electromechanical device includes a structure having an electrically-conductive trace. A defined patch of nanotube fabric is disposed in spaced relation to the trace; and the defined patch of nanotube fabric is electromechanically deflectable between a first and second state. In the first state, the nanotube article is in spaced relation relative to the trace, and in the second state the nanotube article is in contact with the trace. A low resistance signal path is in electrical communication with the defined patch of nanofabric. Under certain embodiments, the structure includes a defined gap into which the electrically conductive trace is disposed. The defined gap has a defined width, and the defined patch of nanotube fabric spans the gap and has a longitudinal extent that is slightly longer than the defined width of the gap. Under certain embodiments, a clamp is disposed at each of two ends of the nanotube fabric segment and disposed over at least a portion of the nanotube fabric segment substantially at the edges defining the gap. Under certain embodiments, the clamp is made of electrically-conductive material. Under certain embodiments, the contact between the nanotube patch and the trace is a non-volatile state. Under certain embodiments, the contact between the nanotube patch and the trace is a volatile state. Under certain embodiments, the at least one electrically conductive trace has an interface material to alter the attractive force between the nanotube fabric segment and the electrically conductive trace.

    摘要翻译： 描述了具有水平布置的纳米制品的新器件及其制造方法。 分立的机电装置包括具有导电迹线的结构。 定义的纳米管织物贴片与痕迹间隔开设置; 并且所述限定的纳米管织物片在第一和第二状态之间是机电偏转的。 在第一状态下，纳米管制品相对于迹线具有间隔的关系，并且在第二状态下，纳米管制品与痕迹接触。 低电阻信号路径与所定义的纳米片段电连通。 在某些实施例中，该结构包括限定的导电迹线设置的间隙。 限定的间隙具有限定的宽度，并且限定的纳米管织物片段跨过间隙并且具有比限定的间隙宽度稍长的纵向范围。 在某些实施例中，夹具设置在纳米管织物片段的两端中的每一个处，并且在纳米管织物片段的至少一部分上大致位于限定间隙的边缘处。 在某些实施例中，夹具由导电材料制成。 在某些实施方案中，纳米管贴片和迹线之间的接触是非挥发性状态。 在某些实施方案中，纳米管贴片和迹线之间的接触是挥发性状态。 在某些实施例中，至少一个导电迹线具有界面材料，以改变纳米管织物片段和导电迹线之间的吸引力。

    Devices having vertically-disposed nanofabric articles and methods of making the same
    49.
    发明授权
    Devices having vertically-disposed nanofabric articles and methods of making the same 有权
    具有垂直布置的纳米制品的装置及其制造方法

    公开(公告)号：US07112464B2

    公开(公告)日：2006-09-26

    申请号：US11158217

    申请日：2005-06-21

    申请人： Venkatachalam C. Jaiprakash ,  Jonathan W. Ward ,  Thomas Rueckes ,  Brent M. Segal

    发明人： Venkatachalam C. Jaiprakash ,  Jonathan W. Ward ,  Thomas Rueckes ,  Brent M. Segal

    IPC分类号： H01L21/00

    CPC分类号： G11C13/025 ,  B81B2203/0338 ,  B81B2203/04 ,  B81C1/00142 ,  B81C2201/0109 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/02 ,  C01B2202/22 ,  G11C11/56 ,  G11C13/0033 ,  G11C23/00 ,  G11C2213/16 ,  G11C2213/77 ,  G11C2213/81 ,  H01H1/0094 ,  H01L21/76838 ,  H01L51/0048 ,  H01L2221/1094 ,  Y10S977/943

    摘要： Electro-mechanical switches and memory cells using vertically-disposed nanofabric articles and methods of making the same are described. An electro-mechanical device, includes a structure having a major horizontal surface and a channel formed therein. A conductive trace is in the channel; and a nanotube article vertically suspended in the channel, in spaced relation to a vertical wall of the channel. The article is electro-mechanically deflectable in a horizontal direction toward the conductive trace. Under certain embodiments, the vertically suspended extent of the nanotube article is defined by a thin film process. Under certain embodiments, the vertically suspended extent of the nanotube article is about 50 nanometers or less. Under certain embodiments, the nanotube article is clamped with a conducting material disposed in porous spaces between some nanotubes of the nanotube article. Under certain embodiments, the nanotube article is formed from a porous nanofabric. Under certain embodiments, the nanotube article is electromechanically deflectable into contact with the conductive trace and the contact is either a volatile state or non-volatile state depending on the device construction. Under certain embodiments, the vertically oriented device is arranged into various forms of three-trace devices. Under certain embodiments, the channel may be used for multiple independent devices, or for devices that share a common electrode.

    摘要翻译： 描述了使用垂直布置的纳米制品的机电开关和存储单元及其制造方法。 机电装置包括具有主要水平表面和形成在其中的通道的结构。 通道中有导电迹线; 以及垂直悬挂在所述通道中的与所述通道的垂直壁成间隔开的纳米管制品。 该物品在水平方向上可电导向导电迹线偏转。 在某些实施方案中，纳米管制品的垂直悬浮程度由薄膜工艺限定。 在某些实施方案中，纳米管制品的垂直悬浮程度为约50纳米或更小。 在某些实施例中，纳米管制品被夹持在布置在纳米管制品的一些纳米管之间的多孔空间中的导电材料上。 在某些实施方案中，纳米管制品由多孔纳米纤维形成。 在某些实施例中，取决于器件结构，纳米管制品在机电上可偏转成与导电迹线接触，并且触点是易失性状态或非易失性状态。 在某些实施例中，垂直取向的装置被布置成各种形式的三轨迹装置。 在某些实施例中，信道可以用于多个独立设备，或者可以用于共享公共电极的设备。