公开(公告)号：US07715170B2

公开(公告)日：2010-05-11

申请号：US11690950

申请日：2007-03-26

申请人： Julian G. Blake ,  Dale K. Stone ,  Lyudmila Stone ,  David Suuronen

发明人： Julian G. Blake ,  Dale K. Stone ,  Lyudmila Stone ,  David Suuronen

IPC分类号： H01L21/683 ,  H01T23/00

CPC分类号： H02N13/00 ,  H01J37/20 ,  H01J2237/2007 ,  H01J2237/31701 ,  H01L21/6833

摘要： Electrostatic clamping devices and methods for reducing contamination to a workpiece coupled to an electrostatic clamping device are disclosed. According to an embodiment an electrostatic clamping device for coupling a workpiece comprises: an embossment portion on a surface of a body to contact the workpiece; and at least two electrodes within the body; wherein the two electrodes are separated by a separation portion below the embossment portion.

摘要翻译： 公开了用于减少与静电夹紧装置连接的工件的污染的静电夹紧装置和方法。 根据实施例，用于联接工件的静电夹紧装置包括：在主体表面上与工件接触的压花部分; 和身体内至少两个电极; 其中两个电极由压花部分下方的分离部分分开。

公开(公告)号：US20090179158A1

公开(公告)日：2009-07-16

申请号：US12353642

申请日：2009-01-14

申请人： Lyudmila Stone ,  Julian G. Blake ,  Dale K. Stone ,  Ron S. Serisky

发明人： Lyudmila Stone ,  Julian G. Blake ,  Dale K. Stone ,  Ron S. Serisky

IPC分类号： H01J27/00 ,  G21K1/00 ,  H01J49/00

CPC分类号： H01J37/3171 ,  H01J37/16 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/0268 ,  H01J2237/31705

摘要： This device has a liner disposed on a face in a vacuum chamber. A component in the vacuum chamber defines the face. The liner is configured to protect the workpiece from contamination or to prevent blistering of the face caused by implantation of atoms or ions into the face. The liner may be disposable and removed from the face in the vacuum chamber and replaced with a new liner in some embodiments. This liner may be a polymer with a roughened surface, be carbon-based, or be composed of carbon nanotubes in some embodiments.

摘要翻译： 该装置具有设置在真空室中的表面上的衬垫。 真空室中的部件限定了面。 衬套被配置为保护工件免受污染或防止由于将原子或离子注入到面中引起的起泡。 在一些实施例中，衬垫可以是一次性的并且从真空室中的表面移除并替换为新衬里。 在一些实施方案中，该衬垫可以是具有粗糙表面的聚合物，为碳基，或由碳纳米管组成。

公开(公告)号：US20080239614A1

公开(公告)日：2008-10-02

申请号：US11690950

申请日：2007-03-26

申请人： Julian G. Blake ,  Dale K. Stone ,  Lyudmila Stone ,  David Suuronen

发明人： Julian G. Blake ,  Dale K. Stone ,  Lyudmila Stone ,  David Suuronen

IPC分类号： H01L21/683

CPC分类号： H02N13/00 ,  H01J37/20 ,  H01J2237/2007 ,  H01J2237/31701 ,  H01L21/6833

摘要： Electrostatic clamping devices and methods for reducing contamination to a workpiece coupled to an electrostatic clamping device are disclosed. According to an embodiment an electrostatic clamping device for coupling a workpiece comprises: an embossment portion on a surface of a body to contact the workpiece; and at least two electrodes within the body; wherein the two electrodes are separated by a separation portion below the embossment portion.

摘要翻译： 公开了用于减少与静电夹紧装置连接的工件的污染的静电夹紧装置和方法。 根据实施例，用于联接工件的静电夹紧装置包括：在主体表面上与工件接触的压花部分; 和身体内至少两个电极; 其中两个电极由压花部分下方的分离部分分开。

公开(公告)号：US06998353B2

公开(公告)日：2006-02-14

申请号：US10011518

申请日：2001-11-05

申请人： Yuri Erokhin ,  Julian G. Blake

发明人： Yuri Erokhin ,  Julian G. Blake

IPC分类号： H01L21/31

CPC分类号： H01L21/76243 ,  Y10S438/966

摘要： The present invention provides methods and system for forming a buried oxide layer (BOX) region in a semiconductor substrate, such as, a silicon wafer. In one aspect, in a method of the invention, an initial dose of oxygen ions is implanted in the substrate while maintaining the substrate temperature in a range of about 300° C. to 600° C. Subsequently, a second dose of oxygen ions is implanted in the substrate while actively cooling the substrate to maintain the substrate temperature in range of about 50° C. to 150° C. These ion implantation steps are followed by an annealing step in an oxygen containing atmosphere to form a continuous BOX region in the substrate. In one preferred embodiment, the initial ion implantation step is performed in a chamber that includes a device for heating the substrate while the second ion implantation step is performed in a separate chamber that is equipped with a device for actively cooling the substrate. The annealing step can be performed in a third chamber or in either of the first or second chambers.

摘要翻译： 本发明提供了在诸如硅晶片的半导体衬底中形成掩埋氧化物层（BOX）区的方法和系统。 一方面，在本发明的方法中，将初始剂量的氧离子注入到衬底中，同时将衬底温度保持在约300℃至600℃的范围内。随后，第二剂量的氧离子为 植入衬底中同时主动冷却衬底，以将衬底温度维持在约50℃至150℃的范围内。这些离子注入步骤之后是在含氧气氛中的退火步骤，以形成连续的BOX区域 基质。 在一个优选实施例中，初始离子注入步骤在包括用于加热衬底的器件的腔室中执行，而第二离子注入步骤在配备有用于主动冷却衬底的器件的单独室中执行。 退火步骤可以在第三室或第一室或第二室中的任一个中进行。

公开(公告)号：US5793050A

公开(公告)日：1998-08-11

申请号：US756133

申请日：1996-11-26

申请人： Peter H. Rose ,  Julian G. Blake ,  Adam A. Brailove ,  Zhongmin Yang ,  Richard F. McRay ,  Barbara J. Hughey

发明人： Peter H. Rose ,  Julian G. Blake ,  Adam A. Brailove ,  Zhongmin Yang ,  Richard F. McRay ,  Barbara J. Hughey

IPC分类号： H01J27/14 ,  H01J37/08 ,  H01J37/18 ,  H01J37/30 ,  H01J37/304 ,  H01J37/317 ,  H01L21/00 ,  H01L21/677 ,  H01L21/683

CPC分类号： H01L21/67109 ,  H01J27/14 ,  H01J37/08 ,  H01J37/18 ,  H01J37/3002 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3171 ,  H01L21/67069 ,  H01L21/67745 ,  H01L21/67748 ,  H01L21/67751 ,  H01L21/67778 ,  H01L21/6838 ,  H01J2237/022 ,  H01J2237/083 ,  H01J2237/184 ,  H01J2237/2001 ,  H01J2237/2007 ,  H01J2237/20228 ,  H01J2237/204 ,  H01J2237/31701 ,  H01J2237/31705

摘要： An ion implantation system that rapidly and efficiently processes large quantities of workpieces, such as flat panel displays. The ion implantation system includes a high vacuum process chamber that mounts an ion source, a single workpiece translating stage, and a loadlock. The single workpiece handling assembly mounted within the process chamber both removes the workpiece from the loadlock and supports the workpiece during implantation by the ion beam generated by the ion source. The process chamber is in selective fluid communication with a loadlock assembly, which in turn is mechanically integrated with a workpiece loading or end station. Additionally, the workpiece handling assembly includes a translation stage or element for translating the workpiece in a linear scanning direction during implantation. This linear scanning direction extends along a path transverse or orthogonal to the horizontal longitudinal axis of the implantation system. According to one practice, the scanning direction and the longitudinal axis form an angle therebetween that is less than or equal to about 85 degrees.

公开(公告)号：US5760405A

公开(公告)日：1998-06-02

申请号：US756970

申请日：1996-11-26

申请人： Michael C. King ,  Julian G. Blake ,  Peter H. Rose

发明人： Michael C. King ,  Julian G. Blake ,  Peter H. Rose

IPC分类号： H01J27/14 ,  H01J37/08 ,  H01J37/18 ,  H01J37/30 ,  H01J37/304 ,  H01J37/317 ,  H01L21/00 ,  H01L21/677 ,  H01L21/683 ,  H01J27/20

CPC分类号： H01L21/67109 ,  H01J27/14 ,  H01J37/08 ,  H01J37/18 ,  H01J37/3002 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3171 ,  H01L21/67069 ,  H01L21/67748 ,  H01L21/67751 ,  H01L21/67778 ,  H01L21/6838 ,  H01J2237/022 ,  H01J2237/083 ,  H01J2237/184 ,  H01J2237/2001 ,  H01J2237/2007 ,  H01J2237/20228 ,  H01J2237/204 ,  H01J2237/31701 ,  H01J2237/31705

摘要： An ion source for generating an ion beam of primary ions is disclosed that includes a plasma chamber and magnets positioned therein for separating the primary ions of the plasma from secondary ions within the plasma. An electrode assembly extracts the primary ions through an extractor outlet port of the plasma chamber to form an ion beam, which preferentially is shaped as a ribbon beam. The primary ions are accelerated in the form of a ribbon beam toward the target workpiece for doping the device. The magnets are oriented in the chamber to produce a uniform current density of primary ions parallel to the elongated axis of the ribbon beam.

摘要翻译： 公开了用于产生一次离子的离子束的离子源，其包括等离子体室和位于其中的磁体，用于将等离子体的主离子与等离子体内的次离子分离。 电极组件通过等离子体室的提取器出口提取初级离子以形成优选成形为带状束的离子束。 初级离子以带状束的形式加速到目标工件以掺杂该器件。 磁体在腔室中定向以产生平行于带状束的细长轴线的初级离子的均匀电流密度。

公开(公告)号：US08672311B2

公开(公告)日：2014-03-18

申请号：US12791278

申请日：2010-06-01

申请人： Dale K. Stone ,  Julian G. Blake ,  D. Jeffrey Lischer

发明人： Dale K. Stone ,  Julian G. Blake ,  D. Jeffrey Lischer

IPC分类号： B23Q3/00

CPC分类号： H01L21/67109 ,  H01L21/6831 ,  H01L21/68742

摘要： A workpiece support, which more effectively cools a textured workpiece is disclosed. A layer is added on top of a workpiece support. This layer is sufficiently soft so as to conform to the textured workpiece. Furthermore, the layer has a dielectric constant such that it does not alter the normal operation of the underlying electrostatic clamp. In some embodiments, the locations of the ground and lift pins are moved to further reduce the leakage of backside gas.

摘要翻译： 公开了一种更有效地冷却纹理工件的工件支撑件。 在工件支架的顶部添加一层。 该层足够柔软以符合纹理化的工件。 此外，该层具有介电常数，使得其不会改变下面的静电夹的正常操作。 在一些实施例中，移动地面和升降销的位置以进一步减少背侧气体的泄漏。

公开(公告)号：US08487280B2

公开(公告)日：2013-07-16

申请号：US12909225

申请日：2010-10-21

申请人： Gary E. Dickerson ,  Julian G. Blake

发明人： Gary E. Dickerson ,  Julian G. Blake

IPC分类号： G21K5/00

CPC分类号： H01L21/76254 ,  H01L21/26506

摘要： A first species is implanted into an entire surface of a workpiece and helium is implanted into this entire surface with a non-uniform dose. The first species may be, for example, hydrogen, helium, or nitrogen. The helium has a higher dose at a portion of a periphery of the workpiece. When the workpiece is split, this split is initiated at the periphery with the higher dose. The non-uniform dose may be formed by altering a scan speed of the workpiece or an ion beam current of the helium. In one instance, the non-uniform dose of the helium is larger than a uniform dose of the hydrogen.

摘要翻译： 将第一种植入植入工件的整个表面，并以不均匀的剂量将氦注入整个表面。 第一种可以是例如氢，氦或氮。 氦在工件周边的一部分具有更高的剂量。 当工件分裂时，该分裂在较高剂量的周边开始。 可以通过改变工件的扫描速度或氦的离子束电流来形成非均匀剂量。 在一种情况下，氦的不均匀剂量大于均匀剂量的氢。

公开(公告)号：US07816239B2

公开(公告)日：2010-10-19

申请号：US12581491

申请日：2009-10-19

申请人： Julian G. Blake ,  Kevin M. Daniels

发明人： Julian G. Blake ,  Kevin M. Daniels

IPC分类号： H01L21/04

CPC分类号： H01L21/266 ,  H01J37/3171 ,  H01J2237/31711 ,  H01L31/18

摘要： Techniques for manufacturing solar cells are disclosed. In one particular exemplary embodiment, the technique may comprise disposing a mask upstream of the solar cell, the mask comprising a plurality of filaments spaced apart from one another to define at least one aperture; directing a ribbon ion beam of desired species toward the solar cell to ion implant a portion of the solar cell defined by the at least one aperture of the mask; and orienting the ribbon ion beam such that longer cross-section dimension of the ribbon beam is perpendicular to the aperture in one plane.

摘要翻译： 公开了制造太阳能电池的技术。 在一个特定的示例性实施例中，技术可以包括在太阳能电池的上游设置掩模，所述掩模包括彼此间隔开的多个细丝以限定至少一个孔; 将所需物质的带状离子束引向太阳能电池以离子注入由掩模的至少一个孔限定的太阳能电池的一部分; 并且使带状离子束定向成使得带状束的较长横截面尺寸垂直于一个平面中的孔。

公开(公告)号：US6025602A

公开(公告)日：2000-02-15

申请号：US66180

申请日：1998-04-23

申请人： Peter H. Rose ,  Julian G. Blake ,  Adam A. Brailove ,  Zhongmin Yang ,  Richard F. McRay ,  Barbara J. Hughey

发明人： Peter H. Rose ,  Julian G. Blake ,  Adam A. Brailove ,  Zhongmin Yang ,  Richard F. McRay ,  Barbara J. Hughey

IPC分类号： H01J27/14 ,  H01J37/08 ,  H01J37/18 ,  H01J37/30 ,  H01J37/304 ,  H01J37/317 ,  H01L21/00 ,  H01L21/677 ,  H01L21/683 ,  H01J37/20

CPC分类号： H01L21/67109 ,  H01J27/14 ,  H01J37/08 ,  H01J37/18 ,  H01J37/3002 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3171 ,  H01L21/67069 ,  H01L21/67745 ,  H01L21/67748 ,  H01L21/67751 ,  H01L21/67778 ,  H01L21/6838 ,  H01J2237/022 ,  H01J2237/083 ,  H01J2237/184 ,  H01J2237/2001 ,  H01J2237/2007 ,  H01J2237/20228 ,  H01J2237/204 ,  H01J2237/31701 ,  H01J2237/31705

摘要： An ion implantation system that rapidly and efficiently processes large quantities of workpieces, such as flat panel displays. The ion implantation system includes a high vacuum process chamber that mounts an ion source, a single workpiece translating stage, and a loadlock. The single workpiece handling assembly mounted within the process chamber both removes the workpiece from the loadlock and supports the workpiece during implantation by the ion beam generated by the ion source. The process chamber is in selective fluid communication with a loadlock assembly, which in turn is mechanically integrated with a workpiece loading or end station. Additionally, the workpiece handling assembly includes a translation stage or element for translating the workpiece in a linear scanning direction during implantation. This linear scanning direction extends along a path transverse or orthogonal to the horizontal longitudinal axis of the implantation system. According to one practice, the scanning direction and the longitudinal axis form an angle therebetween that is less than or equal to about 85 degrees.

摘要翻译： 一种快速有效地处理大量工件的离子注入系统，如平板显示器。 离子注入系统包括安装离子源的高真空处理室，单个工件平移台和负载锁。 安装在处理室内的单个工件处理组件都将工件从装载锁上移除，并通过由离子源产生的离子束在植入期间支撑工件。 处理室与负载锁组件选择性地流体连通，负载锁组件又与工件加载或终端机械地集成。 另外，工件处理组件包括用于在植入期间沿线性扫描方向平移工件的平移台或元件。 该线性扫描方向沿着与植入系统的水平纵向轴线横向或正交的路径延伸。 根据一个实践，扫描方向和纵向轴线之间形成小于或等于约85度的角度。