Abstract:
One embodiment of the present invention is an electron beam treatment apparatus that includes: (a) an array of lamps that output radiation; (b) a support mechanism adapted to support a substrate at a treatment position above the lamps; and (c) a lamp heat shield, disposed above the array, having a radiation absorption portion adapted to absorb radiation from at least a portion of the array, and a radiation reflection portion adapted to reflect radiation from at least a portion of the array towards the substrate when disposed at the treatment position.
Abstract:
A method provides differentiated quality of service (QoS) by providing adaptive updates to media access control (MAC) layer parameters on a distributed basis. The method includes calculating a failure probability for a transmission over the network, determining a target value for determining a contention window according to a mapped function of the failure probability, and altering the contention window according to a scaling function of the target value. The mapped function and the scaling can provide QoS differentiation. A wireless device ensures fairness in a wireless time slotted network and includes a network interface card (NIC), a network driver interface, a network monitor, a statistics engine, and an adaptive parameter engine for determining a target value for determining a contention window according to a mapped function of the one or more probabilities to enable an alteration of the contention window and provide new parameters for the MAC layer.
Abstract:
A compact spectroscope is sufficiently lightweight for use in combination with a microscope for analyzing samples using Raman analytical techniques. The Raman spectroscope includes a housing detachably mountable to the microscope. The housing contains at least one source of radiation. One or more filters are positioned at desired angles across the beam path provided by the source of radiation. The spectroscope includes a variety of components operatively connected to source of radiation capable of providing one or more Raman beams, as well as a variety of components for processing beam constituents for microscope analysis. A fiber optic probe is provided for examining large samples or samples at remote sites. A computer or other electronic reader may also be attached to the Raman spectroscope for viewing analytical data.
Abstract:
The invention provides transgenic non-human animals and transgenic non-human mammalian cells harboring a transgene encoding an APP polypeptide comprising the Swedish mutation.
Abstract:
To generate a color palette having m colors (such as 28=256 colors) from a color image described in a color space, pixel image data corresponding to the color image is first obtained. A frequency of occurrence for each color in the pixel image data is then determined. Each color in the pixel image data is assigned to one of a predetermined number of cells into which the color space has been partitioned, the predetermined number being not greater than m. The most commonly occurring color is selected in each cell in which a color exists, so as to obtain n palette colors. A vote value is calculated for each unselected color, the vote value being based at least in part on the frequency of occurrence of the color in the pixel image and a weighting factor based on a rank of the color in its corresponding cell, the unselected colors being the colors not selected in the first selecting step. Thereafter, m-n colors are selected as the unselected colors with the highest vote values. Also, input colors in a color image described in a color space are mapped to a reduced palette of m colors derived by partitioning the color space into a predetermined number of cells, there being at least one palette color in each cell that includes an input color. The mapping is performed by determining in which cell each input color lies, and mapping each input color to the closest palette color from among all palette colors in the cell identified for that input color.
Abstract:
A process and apparatus is described for the processing of thin films on semiconductor substrates using one or more liquid precursor sources wherein the liquid precursor source with the highest vapor pressure is first vaporized and then introduced as a vapor into a common manifold connected to a processing chamber, with the point of introduction being spaced away from the processing chamber. A second liquid precursor source, having a vapor pressure lower than the first liquid precursor source, is then introduced in vaporized form into the manifold at a point closer to the processing chamber. This is repeated for each liquid precursor source, with each succeeding liquid precursor source having the next lower vapor pressure being introduced in vaporized form into the manifold at a point closer to the processing chamber than the previous liquid precursor source. A temperature gradient may then be maintained along the manifold with the temperature gradually increased in a direction toward the processing chamber while still mitigating premature boiling of the liquid precursor sources prior to vaporization, or condensation of already vaporized liquid precursor sources or components.
Abstract:
The present invention provides a simplified heater design that is scaleable for equipment processing different diameter substrates and that can efficiently and economically process substrates to meet stringent film requirements such as film uniformity for fabricating high integration devices. The present invention is particularly useful for economically and efficiently producing integrated devices using increasingly larger diameter substrates, such as 12-inch (or 300-mm) diameter and even larger substrates. According to one embodiment, the present invention provides a heater assembly for use in a substrate processing apparatus. The heater assembly includes a metal pedestal including a surface for supporting a substrate, and a resistive heating element disposed in the metal pedestal. The heater assembly also includes a purge gas channel system disposed in the metal pedestal. The purge gas channel system includes a central purge gas inlet located substantially at a center of the metal pedestal. The central purge gas inlet is for providing a purge gas. The purge gas channel system also includes multiple radial purge gas channels radiating from the central purge gas inlet out toward a perimeter of the metal pedestal, and an annular purge gas channel formed in the metal pedestal at the perimeter. The purge gas channels form a substantially symmetric pattern, and each of the purge gas channels are substantially the same length. In a specific embodiment, the assembly includes an annular purge gas channel coupled to the surface via multiple holes near the perimeter to provide a purge guide ring integral to the metal pedestal. Other embodiments of the present invention are also provided.
Abstract:
An apparatus for measuring and applying instrumentation correction to produce a standard Raman spectrum of a sample to be analyzed. A source of incident radiation is included. Also included are means for providing from the incident radiation an incident beam and a monitor beam. The incident beam is directed at the sample. The invention includes means for generating from the sample a Raman beam. Spectral data may be collected directly from the monitor beam and the Raman beam. Spectral data may be collected substantially simultaneously from the monitor beam and the Raman beam, or sequentially. One or more integral transforms are applied to spectral data to produce the standard Raman spectrum of the sample.
Abstract:
The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.
Abstract:
The invention relates to an apparatus and process for filtering deposition gases in a substrate processing system. Particularly contemplated is an apparatus and process for the filtering deposition gases of a metal-oxide film deposited on a silicon wafer to make integrated circuits. In one embodiment, the invention provides an apparatus for filtering a fluid in a semiconductor processing system, comprising a housing and a filtering member disposable in the housing, the filtering member comprising a base portion and a filtering portion having an inlet and an outlet and a plurality of temperature controlled fluid passages formed between the inlet and the outlet, the passages having a length longer than a width across the passages.