公开(公告)号：US6115216A

公开(公告)日：2000-09-05

申请号：US780328

申请日：1997-01-08

申请人： Hiroaki Yoda ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Naoyuki Inoue ,  Akio Hori

发明人： Hiroaki Yoda ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Naoyuki Inoue ,  Akio Hori

IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/33 ,  G11B5/265

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/3996 ,  G11B5/3116 ,  G11B5/3163

摘要： A magnetoresistance effect type head comprises a magnetoresistance effect film having a pair of leads connected thereto and possessing a magnetic field responding part and a pair of upper and lower shield layers having a magnetoresistance effect film nipped therebetween through the medium of a magnetic gap-forming insulating film. This magnetoresistance effect type head satisfies the relations, W.sub.s

摘要翻译： 磁阻效应型头包括具有连接到其上的一对引线并具有磁场响应部分的磁阻效应膜，以及一对具有磁阻效应膜的上下屏蔽层，其间通过磁隙形成绝缘体 电影。 该磁阻效应型磁头满足Ws

公开(公告)号：US20060164764A1

公开(公告)日：2006-07-27

申请号：US11389175

申请日：2006-03-27

申请人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

发明人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3143 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  Y10T428/1114

摘要： There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

公开(公告)号：US07046489B2

公开(公告)日：2006-05-16

申请号：US11080485

申请日：2005-03-16

申请人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

发明人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

IPC分类号： G11B5/33

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3143 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  Y10T428/1114

摘要： There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

公开(公告)号：US06937446B2

公开(公告)日：2005-08-30

申请号：US09981987

申请日：2001-10-19

申请人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

发明人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

IPC分类号： G11B5/31 ,  G11B5/39

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3143 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  Y10T428/1114

摘要： There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

摘要翻译： 提供了一种具有适当的电阻值的实用磁阻效应元件，其可以被敏化并且具有少量的要控制的磁性层，以及使用该电阻的磁头和磁记录和/或再现系统。 在使感应电流沿与膜的平面垂直的方向流动的磁阻效应元件中，电阻调节层设置在被钉扎层，自由层和非磁性中间层中的至少一个中。 电阻调节层含有氧化物，氮化物，氟化物，碳化物或硼化物作为主要成分。 电阻调节层可以是连续的膜或者可以具有针孔。 因此，可以提供具有适当的电阻值的实用的磁阻效应元件，其可以被敏化并且具有少量的磁性层，同时有效地利用依赖于自旋的散射效应。

公开(公告)号：US06495275B2

公开(公告)日：2002-12-17

申请号：US09927379

申请日：2001-08-13

申请人： Yuzo Kamiguchi ,  Akiko Saito ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hiromi Yuasa ,  Hideaki Fukuzawa ,  Susumu Hashimoto ,  Hitoshi Iwasaki ,  Hiroaki Yoda ,  Masashi Sahashi

发明人： Yuzo Kamiguchi ,  Akiko Saito ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hiromi Yuasa ,  Hideaki Fukuzawa ,  Susumu Hashimoto ,  Hitoshi Iwasaki ,  Hiroaki Yoda ,  Masashi Sahashi

IPC分类号： G11B5127

CPC分类号： H01F10/3272 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/00 ,  G11B5/3143 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3259 ,  H01F10/3268 ,  H01F41/302 ,  H01L43/10 ,  Y10S428/90 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/1193 ,  Y10T428/26 ,  Y10T428/265

摘要： A magnetoresistance effect element includes a free layer, a pinned layer and a non-magnetic intermediate layer interposed between the free layer and the pinned layer. Additionally, a metal barrier layer is provided adjacent to the first magnetic layer. An electron reflecting layer located adjacent to the metal barrier layer contains at least one selected from oxides, nitrides, carbides, fluorides, chlorides, sulfides and borides.

摘要翻译： 磁阻效应元件包括自由层，被钉扎层和介于自由层和钉扎层之间的非磁性中间层。 另外，金属阻挡层设置成与第一磁性层相邻。 位于金属阻挡层附近的电子反射层含有选自氧化物，氮化物，碳化物，氟化物，氯化物，硫化物和硼化物中的至少一种。

公开(公告)号：US06303218B1

公开(公告)日：2001-10-16

申请号：US09273496

申请日：1999-03-22

申请人： Yuzo Kamiguchi ,  Akiko Saito ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hiromi Yuasa ,  Hideaki Fukuzawa ,  Susumu Hashimoto ,  Hitoshi Iwasaki ,  Hiroaki Yoda ,  Masashi Sahashi

发明人： Yuzo Kamiguchi ,  Akiko Saito ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hiromi Yuasa ,  Hideaki Fukuzawa ,  Susumu Hashimoto ,  Hitoshi Iwasaki ,  Hiroaki Yoda ,  Masashi Sahashi

IPC分类号： G11B566

CPC分类号： H01F10/3272 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/00 ,  G11B5/3143 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3259 ,  H01F10/3268 ,  H01F41/302 ,  H01L43/10 ,  Y10S428/90 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/1193 ,  Y10T428/26 ,  Y10T428/265

摘要： According to the another aspect of the invention, a magnetoresistance effect element having a magnetoresistance effect film which includes a crystal growth controlling layer as one of films therein, characterized in that a roughness along a boundary between films overlying said crystal growth controlling layer is smaller than a roughness along a boundary between films underlying said crystal growth controlling layer is provided. According to the another aspect of the invention, a magnetoresistance effect element comprising a free layer, pinned layer and a non-magnetic intermediate layer interposed between said free layer and pinned layer, characterized in further comprising a metal barrier layer provided adjacent to said first magnetic layer, and an electron reflecting layer located adjacent to said metal barrier layer and containing at least one selected from oxides, nitrides, carbides, fluorides, chlorides, sulfides and borides is also provided.

摘要翻译： 根据本发明的另一方面，一种具有磁阻效应膜的磁电阻效应元件，其包括作为其中的膜之一的晶体生长控制层，其特征在于，沿着覆盖所述晶体生长控制层的膜之间的边界的粗糙度小于 提供沿着所述晶体生长控制层下面的膜之间的边界的粗糙度。 根据本发明的另一方面，一种磁阻效应元件，包括置于所述自由层和钉扎层之间的自由层，被钉扎层和非磁性中间层，其特征在于还包括与所述第一磁体相邻设置的金属阻挡层 还提供了与所述金属阻挡层相邻并且包含选自氧化物，氮化物，碳化物，氟化物，氯化物，硫化物和硼化物中的至少一种的电子反射层。

公开(公告)号：US09406871B2

公开(公告)日：2016-08-02

申请号：US14807267

申请日：2015-07-23

申请人： Masahiko Nakayama ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Yutaka Hashimoto ,  Masaru Toko ,  Hiroaki Yoda ,  Jae Geun Oh ,  Keum Bum Lee ,  Choon Kun Ryu ,  Hyung Suk Lee ,  Sook Joo Kim

发明人： Masahiko Nakayama ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Yutaka Hashimoto ,  Masaru Toko ,  Hiroaki Yoda ,  Jae Geun Oh ,  Keum Bum Lee ,  Choon Kun Ryu ,  Hyung Suk Lee ,  Sook Joo Kim

IPC分类号： H01L43/00 ,  H01L43/02 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  H01L43/10

CPC分类号： H01L43/02 ,  H01L27/222 ,  H01L27/224 ,  H01L27/226 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.

公开(公告)号：US09236563B2

公开(公告)日：2016-01-12

申请号：US14200894

申请日：2014-03-07

申请人： Yutaka Hashimoto ,  Tadashi Kai ,  Masahiko Nakayama ,  Hiroaki Yoda ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Yasuyuki Sonoda

发明人： Yutaka Hashimoto ,  Tadashi Kai ,  Masahiko Nakayama ,  Hiroaki Yoda ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Yasuyuki Sonoda

IPC分类号： G11C11/16 ,  H01L43/12 ,  H01L43/08

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L43/08

摘要： According to one embodiment, a magnetic memory device includes a magnetoresistance effect element having a structure in which a first magnetic layer, a nonmagnetic layer, a second magnetic layer, and a third magnetic layer are stacked, wherein the third magnetic layer comprises a first region and a plurality of second regions, and each of the second regions is surrounded by the first region, has conductivity, and has a greater magnetic property than the first region.

摘要翻译： 根据一个实施例，磁存储器件包括具有其中堆叠第一磁性层，非磁性层，第二磁性层和第三磁性层的结构的磁阻效应元件，其中第三磁性层包括第一区域 和多个第二区域，并且每个第二区域被第一区域包围，具有导电性，并且具有比第一区域更大的磁特性。

公开(公告)号：US08895162B2

公开(公告)日：2014-11-25

申请号：US13236028

申请日：2011-09-19

申请人： Katsuya Nishiyama ,  Shigemi Mizukami ,  Terunobu Miyazaki ,  Hiroaki Yoda ,  Tadashi Kai ,  Tatsuya Kishi ,  Daisuke Watanabe ,  Mikihiko Oogane ,  Yasuo Ando ,  Masatoshi Yoshikawa ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine ,  Chunlan Feng

发明人： Katsuya Nishiyama ,  Wu Feng ,  Shigemi Mizukami ,  Terunobu Miyazaki ,  Hiroaki Yoda ,  Tadashi Kai ,  Tatsuya Kishi ,  Daisuke Watanabe ,  Mikihiko Oogane ,  Yasuo Ando ,  Masatoshi Yoshikawa ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine

IPC分类号： G01R33/09 ,  H01L43/08 ,  H01F10/32 ,  H01L43/10 ,  H01F10/193 ,  G11C11/16 ,  H01L27/22 ,  B82Y25/00 ,  H01F10/28

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G01R33/09 ,  G11C11/16 ,  G11C11/161 ,  H01F10/123 ,  H01F10/1933 ,  H01F10/1936 ,  H01F10/28 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1121 ,  Y10T428/1143

摘要： A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer and having a changeable magnetization direction with an easy axis of magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer and having a fixed magnetization layer with an easy axis of magnetization in a direction perpendicular to the film plane. The first magnetic layer includes a ferrimagnetic layer having a DO22 structure or an L10 structure, the ferrimagnetic layer has a c-axis oriented in a direction perpendicular to the film plane, and the magnetization direction of the first magnetic layer is changeable by a current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.

摘要翻译： 根据实施例的磁阻元件包括：基底层; 第一磁性层，形成在所述基底层上，并且具有在垂直于膜平面的方向上具有容易的磁化轴的可变磁化方向; 形成在第一磁性层上的第一非磁性层; 以及形成在第一非磁性层上并且具有在垂直于膜平面的方向上具有易磁化轴的固定磁化层的第二磁性层。 第一磁性层包括具有DO22结构或L10结构的铁氧体层，所述铁氧体层具有在垂直于所述膜平面的方向上取向的c轴，并且所述第一磁性层的磁化方向可以由电流流过 通过第一磁性层，第一非磁性层和第二磁性层。

公开(公告)号：US08884389B2

公开(公告)日：2014-11-11

申请号：US13618780

申请日：2012-09-14

申请人： Masaru Toko ,  Masahiko Nakayama ,  Akihiro Nitayama ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Hiroaki Yoda

发明人： Masaru Toko ,  Masahiko Nakayama ,  Akihiro Nitayama ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Hiroaki Yoda

IPC分类号： H01L27/22 ,  H01L21/8239 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

CPC分类号： H01L43/08 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

摘要： According to one embodiment, a magnetoresistive element comprises a first magnetic layer having a magnetization direction invariable and perpendicular to a film surface, a tunnel barrier layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel barrier layer and having a magnetization direction variable and perpendicular to the film surface. The first magnetic layer includes an interface layer formed on an upper side in contact with a lower portion of the tunnel barrier layer, and a main body layer formed on a lower side and serving as an origin of perpendicular magnetic anisotropy. The interface layer includes a first area provided on an inner side and having magnetization, and a second area provided on an outer side to surround the first area and having magnetization smaller than the magnetization of the first area or no magnetization.

摘要翻译： 根据一个实施例，磁阻元件包括具有不变且垂直于膜表面的磁化方向的第一磁性层，形成在第一磁性层上的隧道势垒层，以及形成在隧道势垒层上的第二磁性层，并且具有 磁化方向可变并垂直于膜表面。 第一磁性层包括形成在与隧道势垒层的下部相接触的上侧的界面层，以及形成在下侧并用作垂直磁各向异性的原点的主体层。 界面层包括设置在内侧并具有磁化的第一区域和设置在外侧以围绕第一区域并且具有小于第一区域的磁化或不具有磁化的磁化的第二区域。