利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

57 条记录 (耗时 0.027 秒)

    ">
    42.
    发明申请
    "UNIVERSAL" BARRIER CMP SLURRY FOR USE WITH LOW DIELECTRIC CONSTANT INTERLAYER DIELECTRICS 审中-公开
    “通用”BARRIER CMP浆料用于低介电常数中间层电介质

    公开(公告)号：US20090045164A1

    公开(公告)日：2009-02-19

    申请号：US12162173

    申请日：2006-02-03

    申请人： Janos Farkas ,  Philippe Monnoyer ,  Brad Smith ,  Mark Zaleski

    发明人： Janos Farkas ,  Philippe Monnoyer ,  Brad Smith ,  Mark Zaleski

    IPC分类号： H01L21/306 ,  C09G1/02 ,  H01L21/304

    CPC分类号： C09G1/02 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/7684

    摘要： During processing of a semiconductor wafer bearing a structure including a low-k dielectric layer, a cap layer and the metal-diffusion barrier layer, a chemical mechanical polishing method applied to remove the metal-diffusion barrier material involves two phases. In the second phase of the barrier-CMP method, when the polishing interface is close to the low-k dielectric material, the polishing conditions are changed so as to be highly selective, producing a negligible removal rate of the low-k dielectric material. The polishing conditions can be changed in a number of ways including: changing parameters of the composition of the barrier slurry composition, and mixing an additive into the barrier slurry.

    摘要翻译： 在具有包含低k电介质层，盖层和金属扩散阻挡层的结构的半导体晶片的处理期间，应用于去除金属扩散阻挡材料的化学机械抛光方法涉及两相。 在阻挡CMP法的第二阶段中，当抛光界面接近低k电介质材料时，抛光条件发生变化，从而具有高选择性，产生低k电介质材料的去除率可忽略不计。 抛光条件可以以多种方式改变，包括：改变阻挡浆料组合物的组成的参数，以及将添加剂混合到阻挡浆料中。

    Apparatus for Cleaning of Circuit Substrates
    43.
    发明申请
    Apparatus for Cleaning of Circuit Substrates 有权
    电路基板清洗装置

    公开(公告)号：US20080271274A1

    公开(公告)日：2008-11-06

    申请号：US11912126

    申请日：2005-04-20

    申请人： Srdjan Kordic ,  Kevin E. Cooper ,  Sebastien Petitdidier ,  Janos Farkas ,  Jan Van-Hassel

    发明人： Srdjan Kordic ,  Kevin E. Cooper ,  Sebastien Petitdidier ,  Janos Farkas ,  Jan Van-Hassel

    IPC分类号： H01L21/00

    CPC分类号： H01L21/67046

    摘要： Silicon wafers and the like are cleaned using new scrubber-type apparatus in which measures are taken to compensate for differential cleaning of the central region of the wafer by: using rotary brushes having one or more non-contact portions arranged in the section thereof that faces the central region of the substrate, or toggling the relative position of the wafer and the rotary brushes, or directing cleaning fluid(s) preferentially towards the central region of the wafer. Another aspect of the invention provides scrubber-type cleaning apparatus in which the rotary brushes are replaced by rollers (110). A web of cleaning material (116) is interposed between each roller and the substrate. Various different webs of cleaning material may be used, e.g. a length of tissue, a continuous loop of cleaning material whose surface is reconditioned on each cleaning pass, adhesive material provided on a carrier tape, etc.

    摘要翻译： 使用新的洗涤器型装置清洁硅晶片等，其中采取措施来补偿晶片的中心区域的差别清洁：使用具有一个或多个非接触部分的旋转电刷， 或者切换晶片和旋转刷的相对位置，或者将清洁流体优先地引向晶片的中心区域。 本发明的另一方面提供了一种洗涤器型清洁装置，其中旋转刷由辊（110）代替。 清洁材料网（116）插入在每个辊和基底之间。 可以使用各种不同的清洁材料网，例如。 组织长度，每个清洁通道上表面被修复的清洁材料的连续回路，设置在载带上的粘合材料等。

    Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process
    45.
    发明授权
    Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process 有权
    使用多台板化学机械抛光（CMP）工艺形成铜互连的方法

    公开(公告)号：US06274478B1

    公开(公告)日：2001-08-14

    申请号：US09352136

    申请日：1999-07-13

    申请人： Janos Farkas ,  Brian G. Anthony ,  Abbas Guvenilir ,  Mohammed Rabiul Islam ,  Venkat Kolagunta ,  John Mendonca ,  Rajesh Tiwari ,  Suresh Venkatesan

    发明人： Janos Farkas ,  Brian G. Anthony ,  Abbas Guvenilir ,  Mohammed Rabiul Islam ,  Venkat Kolagunta ,  John Mendonca ,  Rajesh Tiwari ,  Suresh Venkatesan

    IPC分类号： H01L214763

    CPC分类号： H01L21/7684 ,  H01L21/02074 ,  H01L21/31053 ,  H01L21/3212

    摘要： A copper interconnect polishing process begins by polishing (17) a bulk thickness of copper (63) using a first platen. A second platen is then used to remove (19) a thin remaining interfacial copper layer to expose a barrier film (61). Computer control (21) monitors polish times of the first and second platen and adjusts these times to improve wafer throughput. One or more platens and/or the wafer is rinsed (20) between the interfacial copper polish and the barrier polish to reduce slurry cross contamination. A third platen and slurry is then used to polish away exposed portions of the barrier (61) to complete polishing of the copper interconnect structure. A holding tank that contains anti-corrosive fluid is used to queue the wafers until subsequent scrubbing operations (25). A scrubbing operation (25) that is substantially void of light is used to reduce photovoltaic induced corrosion of copper in the drying chamber of the scrubber.

    摘要翻译： 铜互连抛光工艺通过使用第一压板抛光（17）铜（63）的体积厚度开始。 然后使用第二压板来去除（19）薄的剩余界面铜层以暴露阻挡膜（61）。 计算机控制（21）监测第一和第二压板的抛光时间并调整这些时间以提高晶片的吞吐量。 一个或多个压板和/或晶片在界面铜抛光剂和阻隔抛光剂之间漂洗（20），以减少淤浆交叉污染。 然后使用第三压板和浆料抛光掉屏障（61）的暴露部分以完成铜互连结构的抛光。 使用含有防腐蚀液体的储存罐将晶片排队，直到后续的擦洗操作（25）。 使用基本上无光的擦洗操作（25）用于减少洗涤器的干燥室中的铜的光伏诱发的腐蚀。

    Method for Forming and Managing Networked Websites with Substantially Reduced Duplicate Content
    46.
    发明申请
    Method for Forming and Managing Networked Websites with Substantially Reduced Duplicate Content 审中-公开
    形成和管理具有大量减少重复内容的网络网站的方法

    公开(公告)号：US20160260139A1

    公开(公告)日：2016-09-08

    申请号：US15001227

    申请日：2016-01-19

    申请人： Janos Farkas

    发明人： Janos Farkas

    IPC分类号： G06Q30/02 ,  G06F17/30

    CPC分类号： G06Q30/0277 ,  G06F16/958

    摘要： A method of managing content of a plurality of networked web sites includes the step of creating a plurality of websites forming a network, wherein at least one of the networked websites is an original site with original content, wherein at least one of the other of the networked websites is a promote site for the original site. The method further includes the step of generating a promote webpage containing a promoted content associated with the original content. The promote webpage is maintained on the promote site. The promote webpage includes a hyperlink for at least one element of the promoted content to the original content, wherein the hyperlink provides a reference to a location of the promote webpage and an original content URL for accessing the original content at the original site.

    摘要翻译： 管理多个联网网站的内容的方法包括：创建形成网络的多个网站的步骤，其中至少一个所述网络网站是具有原始内容的原始站点，其中，所述网络中的至少一个 联网网站是原始网站的推广网站。 该方法还包括生成包含与原始内容相关联的促销内容的促销网页的步骤。 宣传网页在宣传网站上保留。 促销网页包括针对原始内容的促销内容的至少一个元素的超链接，其中超链接提供对促销网页的位置的引用和用于访问原始站点处的原始内容的原始内容URL。

    Capping layer formation onto a dual damescene interconnect
    47.
    发明授权
    Capping layer formation onto a dual damescene interconnect 有权
    封盖层形成到双金属互连上

    公开(公告)号：US08263430B2

    公开(公告)日：2012-09-11

    申请号：US12065190

    申请日：2005-09-01

    申请人： Janos Farkas ,  Lynne M Michaelson ,  Srdjan Kordic

    发明人： Janos Farkas ,  Lynne M Michaelson ,  Srdjan Kordic

    IPC分类号： H01L51/56

    CPC分类号： H01L21/02074 ,  H01L21/288 ,  H01L21/3105 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76849

    摘要： A process for the formation of a capping layer on a conducting interconnect for a semiconductor device is provided, the process comprising the steps of: (a) providing one or more conductors in a dielectric layer, and (b) depositing a capping layer on an upper surface of at least some of the one or more conductors, characterized in that the process further includes: (c) the step of, prior to depositing the capping layer, reacting the dielectric layer with an organic compound in a liquid phase, the said organic compound having the following general formula: (I) where X is a functional group, R is an organic group or a organosiloxane group, Y1 is either a functional group or an organic group or organosiloxane group, and Y2 is either a functional group or an organic group or organosiloxane group, and where the functional group(s) is/are independently selected from the following: NH2, a secondary amine, a tertiary amine, acetamide, trifluoroacetamide, imidazole, urea, OH, an alkyoxy, acryloxy, acetate, SH, an alkylthiol, sulfonate, methanosulfonate, and cyanide, and salts thereof.

    摘要翻译： 提供了一种用于在半导体器件的导电互连上形成覆盖层的工艺，该方法包括以下步骤：（a）在电介质层中提供一个或多个导体，以及（b）将覆盖层沉积在 所述一个或多个导体中的至少一些的上表面，其特征在于，所述方法还包括：（c）在沉积覆盖层之前使介电层与液相中的有机化合物反应的步骤，所述 具有以下通式的有机化合物：（I）其中X是官能团，R是有机基团或有机硅氧烷基团，Y1是官能团或有机基团或有机硅氧烷基团，Y2是官能团或 有机基团或有机硅氧烷基团，并且其中官能团独立地选自以下：NH 2，仲胺，叔胺，乙酰胺，三氟乙酰胺，咪唑，脲，OH，烷氧基，丙烯酸 xy，乙酸酯，SH，烷基硫醇，磺酸酯，甲磺酸酯和氰化物，及其盐。

    Method and Arrangement for Failure Handling in a Network
    50.
    发明申请
    Method and Arrangement for Failure Handling in a Network 有权
    网络中故障处理的方法和布置

    公开(公告)号：US20080291822A1

    公开(公告)日：2008-11-27

    申请号：US11916565

    申请日：2005-06-14

    申请人： Janos Farkas ,  Csaba Antal ,  Lars Westberg

    发明人： Janos Farkas ,  Csaba Antal ,  Lars Westberg

    IPC分类号： H04L12/24

    CPC分类号： H04L12/4641 ,  H04L12/462 ,  H04L41/0213 ,  H04L41/06 ,  H04L43/10 ,  H04L45/00

    摘要： The invention relates to failure handling in a tree sructure network (NW1) that has edge nodes (EN1 . . . EN4) and switching nodes (SW1 . . . SW4) interconnected by lines (L1). VLANs (VLAN1-VLAN3) are established such that at least one thereof provides connectivity in case of any single failure in the network. The VLANs can be established by using spanning trees (ST1,ST2,ST3). Among the edge nodes, emitters (EN3) broadcast alive messages (A1,A2,A3) regularly on the VLANs and notifiers (EN2) note the alive messages. A missing alive message indicates a failure (CD1) on one VLAN (VLAN2) and the notifier (EN2) broadcasts corresponding failure messages (F1,F2,F3) on the VLANs. When all the alive messages (A1,A2,A3) appear again the notifier (EN2) broadcasts corresponding repair messages (R1,R2,R3). If the notifiers don't note a failure the nodes (EN1,EN4) with no special role performs a similar function as the notifier (EN2) somewhat slower. The failure handling is fast, robust, uses few messages, increases only slightly the traffic load in the network (NW1) and is compliant with present standards.

    摘要翻译： 本发明涉及具有通过线路（L1）互连的边缘节点（EN1 ... EN4）和交换节点（SW1 ... SW4）的树结构网络（NW1）中的故障处理。 建立VLAN（VLAN1-VLAN3），使得其中的至少一个在网络中的任何单个故障的情况下提供连接性。 VLAN可以通过生成树（ST1，ST2，ST3）建立。 在边缘节点中，发射器（EN3）定期在VLAN和通知器（EN2）上广播有效消息（A1，A2，A3），注意活动消息。 丢失的活着消息表示一个VLAN（VLAN2）发生故障（CD1），通知器（EN2）广播VLAN上相应的故障消息（F1，F2，F3）。 当所有活动消息（A1，A2，A3）再次出现时，通知器（EN2）广播相应的修复消息（R1，R2，R3）。 如果通知程序不记录故障，则没有特殊角色的节点（EN1，EN4）执行与通知程序（EN2）类似的功能稍慢。 故障处理快速，稳健，使用少量消息，仅增加网络流量负载（NW1），符合现行标准。