Abstract:
A track chain assembly (22) has a track shoe (25) and a pair of parallel links (26) that are fixed to a non ground-engaging surface of the track shoe (25) with bolts (36). A connecting shaft (27) is fixed to shaft holes (31) that are provided on end portions each of which is included in the links (26). A reinforcing member (48) connects the links (26) with the bolts (36) so as to reinforce an open side between the links (26). Therefore, the links (26) are prevented from being damaged due to concentration of stress on a specific portion of each link (26).
Abstract:
It is an object of the present invention to effectively suppress the occurrence of burrs in machining of a fiber-reinforced composite material, etc., using an end mill. An end mill includes first cutting edges 4 which spiral in a direction defining a positive helix angle and second cutting edges 5 which spiral in a direction defining a negative helix angle, the first cutting edges 4 and the second cutting edges 5 being disposed at positions shifted in a circumferential direction. The first cutting edges 4 and the second cutting edges 5 are each configured to be continuous over an effective cutting edge length, and at a tool top, a phase angle P1 between one of the first cutting edges 4 and its adjacent second cutting edge 5 located toward the back in a tool rotation direction is set to be different from a phase angle P2 between the second cutting edge 5 and its adjacent first cutting edge 4 located toward the back in the tool rotation direction.
Abstract:
In a track with a rotatable bushing which is brought into engagement with a sprocket of a track-type vehicle, it is intended that strength is enhanced rationally by link functionality sharing and by combination of such assigned functional tasks for achieving further improvements in rotatable bushing function. To this end, a first bolt insertion hole provided in a track shoe mount surface of an external link and a second bolt insertion hole provided in a track shoe mount surface of an internal link are arranged on the same straight line, and a straight line connecting the first bolt insertion hole and the second bolt insertion hole is situated at a position more interior than a contact plane of the external link and internal link.
Abstract:
A semiconductor device is manufactured by the steps of generating a film forming gas by setting a flow rate ratio of H2O to any one of a silicon-contained organic compound having a siloxane bond and a silicon-contained organic compound having a CH3 group to 4 or more and adjusting a gas pressure to 1.5 Torr or more, applying a power to the film forming gas to generate a plasma thereof so as to react it, and thus forming a low-dielectric insulating film (62) on a substrate (61), plasmanizing a process gas containing at least any one of He, Ar, H2 or deuterium, and bringing the low-dielectric insulating film (62) into contact with the plasma of the process gas.
Abstract:
A throw-away insert includes: an upper surface; a bottom surface; two side surfaces formed with upper side surfaces and lower side surfaces; two end surfaces; four nose sections formed at the corners of the upper surface; a main cutting section formed from a ridge line positioned at the intersection between the upper side surface and the upper surface; a secondary cutting section formed from a linear ridge line positioned at the intersection between the end surface and the upper surface; and an axial support surface formed from a section of the end surface. The upper side surface is projected outward more than the lower side surface.
Abstract:
The present invention relates to a deposition method of a low dielectric constant insulating film, which comprises the steps of generating a first deposition gas containing at least one silicon source selecting from the group consisting of silicon containing organic compound having siloxane bond and silicon containing organic compound having CH3 group, and an oxidizing agent consisting of oxygen containing organic compound having alkoxyl group (OR: O is oxygen and R is CH3 or C2H5), and applying electric power to the first deposition gas to generate plasma and then causing reaction to form a low dielectric constant insulating film on a substrate.
Abstract:
Vibration or the like is prevented for long-term use by normalizing, with operation continuing, a tread of a crawler belt link through grinding in an early stage where uneven wear such as corrugated wear occurs. With a crawler belt of a crawler vehicle wound, an abrasive plate for grinding the tread of the crawler belt link is disposed to contact the tread. While the crawler vehicle does normal traveling work, the abrasive plate corrects the tread of the crawler belt link for the uneven wear. The vibration of a vehicle body can thus be prevented during travel with no uneven wear produced.
Abstract:
A throw-away insert includes: an upper and bottom surface; two side surfaces; two end surfaces; a main cutting section formed from a ridge line positioned at the intersection between the side surfaces and the upper surface; a secondary cutting section formed from a ridge line positioned at the intersection between the end surfaces and the upper surface; an axial support surface supported by an insert pocket of a cutter body; and noses formed at the comers of the upper surface. The corner angles of the noses when seen from above are essentially right angles. The axial support surface is formed as a section of the end surface. The secondary cutting section is parallel to the ridge line at the upper end of the axial support surface and the bottom surface. The upper end of the axial support surface is positioned so that it is projected more in the direction of the longitudinal axis of the main cutting section than the ridge line of the upper end.
Abstract:
A semiconductor device is manufactured by the steps of generating a film forming gas by setting a flow rate ratio of H2O to any one of a silicon-contained organic compound having a siloxane bond and a silicon-contained organic compound having a CH3 group to 4 or more and adjusting a gas pressure to 1.5 Torr or more, applying a power to the film forming gas to generate a plasma thereof so as to react it, and thus forming a low-dielectric insulating film (62) on a substrate (61), plasmanizing a process gas containing at least any one of He, Ar, H2 or deuterium, and bringing the low-dielectric insulating film (62) into contact with the plasma of the process gas.
Abstract:
A process gas consisting of one of N2, N2O or a mixture thereof is converted to a plasma and then a surface of a copper wiring layer is exposed to the plasma of the process gas, whereby a surface portion of the copper wiring layer is reformed and made into a copper diffusion preventing barrier. According to this method, a noble semiconductor device can be provided having increased operational speed and less copper diffusion.
Abstract translation:由N 2 N 2 N 2 O 2或其混合物之一组成的工艺气体被转化为等离子体,然后将铜布线层的表面暴露于等离子体 的处理气体,由此将铜布线层的表面部分重整并制成铜扩散防止屏障。 根据该方法,可以提供具有增加的操作速度和较少的铜扩散的贵金属半导体器件。