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    Multi-layered unit including electrode and dielectric layer
    41.
    发明授权
    Multi-layered unit including electrode and dielectric layer 有权
    多层单元包括电极和电介质层

    公开(公告)号：US06977806B1

    公开(公告)日：2005-12-20

    申请号：US10375921

    申请日：2003-02-26

    申请人： Yukio Sakashita

    发明人： Yukio Sakashita

    IPC分类号： B32B9/00 ,  H01G4/06 ,  H01G4/12 ,  H01G4/33 ,  H01L27/04 ,  H05B33/22

    CPC分类号： H01G4/1218 ,  H01G4/33 ,  H05B33/22

    摘要： A multi-layered unit according to the present invention includes a support substrate formed of platinum (Pt), a buffer layer formed on the support substrate and formed of a dielectric material containing a bismuth layer structured compound having an excellent orientation characteristic and a composition represented by Bi4Ti3O12 and oriented in the c axis direction, and a dielectric layer formed on the buffer layer, formed of a dielectric material containing a bismuth layer structured compound having an excellent characteristic as a capacitor material and a composition represented by SrBi4T4O15 and containing the bismuth layer structured compound oriented in the c axis direction. Since the thus constituted multi-layered unit includes the dielectric layer containing the bismuth layer structured compound oriented in the c axis direction, in the case of, for example, providing an upper electrode on the dielectric layer to form a thin film capacitor and applying a voltage between the support substrate serving as an electrode layer and the upper electrode, the direction of the electric field substantially coincides with the c axis of the bismuth layer structured compound contained in the dielectric layer. As a result, since the ferroelectric property of the bismuth layer structured compound contained in the dielectric layer can be suppressed and the paraelectric property thereof can be fully exhibited, it is possible to fabricate a thin film capacitor having a small size, large capacitance and an excellent dielectric characteristic.

    摘要翻译： 根据本发明的多层单元包括由铂（Pt）形成的支撑基板，形成在支撑基板上的缓冲层，由包含具有优异取向特性和组成的铋层结构化合物的电介质材料形成 通过Bi 3 Si 3 O 12和C轴方向取向，并且形成在缓冲层上的由电介质形成的电介质层 含有作为电容器材料具有优异特性的铋层结构化合物的材料和由SrBi 4 N 4 O 15表示的组成，并含有 铋层结构化合物在c轴方向取向。 由于如此构成的多层单元包括在c轴方向上包含铋层结构化合物的电介质层，所以在例如在电介质层上设置上电极以形成薄膜电容器并施加 作为电极层的支撑基板与上部电极之间的电压，电场方向基本上与包含在电介质层中的铋层结构化合物的c轴重合。 结果，由于可以抑制包含在电介质层中的铋层结构化合物的铁电性能并且可以充分发挥其顺电特性，所以可以制造具有小尺寸，大电容的薄膜电容器和 优良的介电特性。

    Piezoelectric device, process for producing the piezoelectric device, and liquid discharge device
    45.
    发明授权
    Piezoelectric device, process for producing the piezoelectric device, and liquid discharge device 有权
    压电元件，压电元件的制造方法以及液体排出装置

    公开(公告)号：US08030828B2

    公开(公告)日：2011-10-04

    申请号：US12116094

    申请日：2008-05-06

    申请人： Hiroyuki Kobayashi ,  Yukio Sakashita

    发明人： Hiroyuki Kobayashi ,  Yukio Sakashita

    IPC分类号： H01L41/08

    CPC分类号： B41J2/14201 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/1871 ,  H01L41/1876 ,  H01L41/316 ,  Y10T29/42

    摘要： A piezoelectric device includes a piezoelectric film, and electrodes through which an electric field can be applied to the piezoelectric film along the thickness direction of the piezoelectric film. The piezoelectric film contains a ferroelectric phase in which the thickness direction and a normal of a plane determined by the spontaneous-polarization axis and the axis makes an angle θm satisfying the condition that −45 degrees

    摘要翻译： 压电装置包括压电薄膜和沿压电薄膜的厚度方向向压电薄膜施加电场的电极。 该压电膜含有铁电相，其中由自发偏振轴和轴确定的平面的厚度方向和法线成一角度;满足-45度<＆gt;; m <+ 45度的条件，并且 ＆thetas; m≠0度。 此外，自发偏振轴或轴可以垂直于压电膜的厚度方向。

    FUNCTIONAL FILM CONTAINING STRUCTURE AND METHOD OF MANUFACTURING FUNCTIONAL FILM
    47.
    发明申请
    FUNCTIONAL FILM CONTAINING STRUCTURE AND METHOD OF MANUFACTURING FUNCTIONAL FILM 失效
    功能膜包含结构和制造功能膜的方法

    公开(公告)号：US20090111279A1

    公开(公告)日：2009-04-30

    申请号：US11916642

    申请日：2006-06-05

    申请人： Yukio Sakashita

    发明人： Yukio Sakashita

    IPC分类号： H01L21/314 ,  B32B7/00 ,  B32B11/04 ,  B32B38/00 ,  B32B17/06

    CPC分类号： H01L21/314 ,  H01L21/31691 ,  H01L21/318 ,  H01L21/76251 ,  H01L39/2422 ,  H01L41/313 ,  H01L41/314 ,  Y10T156/1158 ,  Y10T428/31815

    摘要： A method of manufacturing a functional film by which a functional film formed on a film formation substrate can be easily peeled from the film formation substrate. The method includes the steps of: (a) forming a separation layer on a substrate by using an inorganic material which is decomposed to generate a gas by being applied with an electromagnetic wave; (b) forming a layer to be peeled containing a functional film, which is formed by using a functional material, on the separation layer; and (c) applying the electromagnetic wave toward the separation layer so as to peel the layer to be peeled from the substrate or reduce bonding strength between the layer to be peeled and the substrate.

    摘要翻译： 可以容易地从成膜基板剥离形成在成膜基板上的功能膜的功能膜的制造方法。 该方法包括以下步骤：（a）通过使用通过施加电磁波分解产生气体的无机材料在基板上形成分离层; （b）在分离层上形成含有通过使用功能性材料形成的功能性膜的被剥离层; 和（c）将电磁波施加到分离层，以剥离要从基板上剥离的层，或降低被剥离层与基板之间的接合强度。

    OXIDE BODY, PIEZOELECTRIC DEVICE, AND LIQUID DISCHARGE DEVICE
    48.
    发明申请
    OXIDE BODY, PIEZOELECTRIC DEVICE, AND LIQUID DISCHARGE DEVICE 审中-公开
    氧化物体，压电装置和液体排出装置

    公开(公告)号：US20080302658A1

    公开(公告)日：2008-12-11

    申请号：US12134830

    申请日：2008-06-06

    申请人： Tsutomu Sasaki ,  Yukio Sakashita

    发明人： Tsutomu Sasaki ,  Yukio Sakashita

    IPC分类号： H01L41/18 ,  G01N27/26

    CPC分类号： B41J2/14233 ,  H01L41/1871 ,  H01L41/1873 ,  H01L41/1876 ,  H01L41/1878

    摘要： An oxide body formed of one or more of ferroelectric materials and antiferroelectric materials which exhibit asymmetric double hysteresis in a bipolar polarization-electric field characteristic obtained under a condition that the maximum value of an electric field applied to the oxide body and the magnitude of the minimum value of the electric field are equal (i.e., Emax=|Emin|), where the curve indicating the bipolar polarization-electric field characteristic has at least five points of inflection, and the maximum value of polarization of the oxide body and the magnitude of the minimum value of the polarization are different (i.e., Pmax≠|Pmin|).

    摘要翻译： 由在施加到氧化物体的电场的最大值和最小值的大小的条件下获得的双极性极化电场特性中的一种或多种铁电材料和反铁电材料形成的不对称双滞后的氧化物体 电场的值相等（即Emax = | Emin |），其中表示双极性极化电场特性的曲线具有至少五个拐点，氧化物体的极化最大值和 极化的最小值不同（即Pmax <> | Pmin |）。

    Process for forming a film, piezoelectric film, piezoelectric device, and liquid discharge apparatus
    49.
    发明申请
    Process for forming a film, piezoelectric film, piezoelectric device, and liquid discharge apparatus 有权
    用于形成膜，压电膜，压电装置和液体排出装置的方法

    公开(公告)号：US20080081216A1

    公开(公告)日：2008-04-03

    申请号：US11905130

    申请日：2007-09-27

    申请人： Takamichi Fujii ,  Yukio Sakashita

    发明人： Takamichi Fujii ,  Yukio Sakashita

    IPC分类号： H01L41/00 ,  C23C16/00

    CPC分类号： C23C14/088 ,  B41J2/161 ,  B41J2/1646 ,  C23C14/08 ,  C23C14/345 ,  C23C14/548 ,  H01L41/0805 ,  H01L41/1876 ,  H01L41/316

    摘要： Film formation conditions are determined in accordance with relationships among a film formation temperature Ts (° C.), a difference Vs−Vf (V), which is the difference between a plasma potential Vs (V) in the plasma at the time of the film formation and a floating potential Vf (V), and characteristics of the formed film. For a piezoelectric film containing at least one kind of Pb-containing perovskite type oxide, the film formation conditions should preferably be determined within a range such that Formulas (1) and (2) shown below are satisfied: Ts(° C.)≧400   (1) −0.2Ts+100

    摘要翻译： 成膜条件是根据成膜温度Ts（℃），作为在时间上等离子体中的等离子体电位Vs（V））之间的差的差Vs-Vf（V）的关系来确定的 成膜和浮动电位Vf（V），以及成膜的特性。 对于含有至少一种含Pb的钙钛矿型氧化物的压电膜，优选在满足以下公式（1）和（2）的范围内确定成膜条件：<β直列式 description =“In-line Formulas”end =“lead”？> Ts（°C。）> = 400（1）<？in-line-formula description =“In-line Formulas”end =“tail”？> ？in-line-formula description =“In-line Formulas”end =“lead”？> - 0.2Ts + 100