公开(公告)号：US4749912A

公开(公告)日：1988-06-07

申请号：US54496

申请日：1987-05-27

申请人： Tamio Hara ,  Manabu Hamagaki ,  Yoshinobu Aoyagi ,  Susumu Namba ,  Nobuo Ishii ,  Naoki Takayama ,  Kohei Kawamura

发明人： Tamio Hara ,  Manabu Hamagaki ,  Yoshinobu Aoyagi ,  Susumu Namba ,  Nobuo Ishii ,  Naoki Takayama ,  Kohei Kawamura

IPC分类号： H01J27/08 ,  G01T1/20 ,  H01J27/00

CPC分类号： H01J27/08

摘要： An ion-producing apparatus comprises an electron-producing vessel having an electron-producing chamber, an ion-producing vessel having an ion-producing chamber communicating with the electron-producing chamber, a cathode provided at one end of the electron-producing vessel, an accelerating electrode provided within the ion-producing chamber, for allowing passage of electrons, an anode provided between the cathode and the accelerating electrode, and a power supply circuit for providing a potential difference between the cathode and the anode, thereby to produce electrons in the gap between the cathode and the anode. A vacuum pump is provided for evacuating gas from the ion-producing chamber. A partition is provided within the electron-producing vessel, between the cathode and the anode to divide the electron-producing vessel into a cathode-side chamber and an anode-side chamber, and hinders a gas flow from the cathode-side chamber to the anode-side chamber to apply a pressure difference between both chambers.

摘要翻译： 离子产生装置包括具有电子产生室的电子产生容器，具有与电子产生室连通的离子产生室的离子产生容器，设置在电子产生容器的一端的阴极， 设置在离子产生室内的用于允许电子通过的加速电极，设置在阴极和加速电极之间的阳极，以及用于在阴极和阳极之间提供电位差的电源电路，从而在 阴极和阳极之间的间隙。 提供真空泵用于从离子产生室排出气体。 在电子产生容器内，在阴极和阳极之间设置隔板，以将电子产生容器分成阴极侧室和阳极侧室，并阻止气体从阴极侧室流向 阳极侧室，以在两个室之间施加压力差。

公开(公告)号：US08435882B2

公开(公告)日：2013-05-07

申请号：US12452784

申请日：2008-07-24

申请人： Takaaki Matsuoka ,  Kohei Kawamura

发明人： Takaaki Matsuoka ,  Kohei Kawamura

IPC分类号： H01L21/4763

CPC分类号： H01L21/3148 ,  C23C16/0272 ,  C23C16/36 ,  C23C16/511 ,  H01L21/3185 ,  H01L21/76822 ,  H01L21/76829

摘要： The present invention may be a semiconductor device including of a fluorinated insulating film and a SiCN film deposited on the fluorinated insulating film directly, wherein a density of nitrogen in the SiCN film decreases from interface between the fluorinated insulating film and the SiCN film. In the present invention, the SiCN film that is highly fluorine-resistant near the interface with the CFx film and has a low dielectric constant as a whole can be formed as a hard mask.

摘要翻译： 本发明可以是包括直接沉积在氟化绝缘膜上的氟化绝缘膜和SiCN膜的半导体器件，其中SiCN膜中的氮密度从氟化绝缘膜和SiCN膜之间的界面减小。 在本发明中，作为硬掩模，可以形成与CFx膜的界面附近具有高介电常数的SiCN膜作为整体的低介电常数。

公开(公告)号：US08394231B2

公开(公告)日：2013-03-12

申请号：US11656379

申请日：2007-01-23

申请人： Koichi Takatsuki ,  Hikaru Yoshitaka ,  Shigeo Ashigaki ,  Yoichi Inoue ,  Takashi Akahori ,  Shuuichi Ishizuka ,  Syoichi Abe ,  Takashi Suzuki ,  Kohei Kawamura ,  Hidenori Miyoshi ,  Gishi Chung ,  Yasuhiro Oshima ,  Hiroyuki Takahashi

发明人： Koichi Takatsuki ,  Hikaru Yoshitaka ,  Shigeo Ashigaki ,  Yoichi Inoue ,  Takashi Akahori ,  Shuuichi Ishizuka ,  Syoichi Abe ,  Takashi Suzuki ,  Kohei Kawamura ,  Hidenori Miyoshi ,  Gishi Chung ,  Yasuhiro Oshima ,  Hiroyuki Takahashi

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00 ,  H05H1/24 ,  H01J7/24

CPC分类号： H01J37/32009 ,  H01J37/3244 ,  H01J37/32541

摘要： That surface of an electrode plate 20 which is opposite to a susceptor 10 has a projection shape. The electrode plate 20 is fitted in an opening 26a of shield ring 26 at a projection 20a. At this time, the thickness of the projection 20a is approximately the same as the thickness of the shield ring 26. Accordingly, the electrode plate 20 and the shield ring 26 form substantially the same plane. The major surface of the projection 20a has a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plate 20 is formed of, for example, SiC.

摘要翻译： 与基座10相对的电极板20的表面具有突出形状。 电极板20在突起20a处嵌合在屏蔽环26的开口26a中。 此时，突起20a的厚度与屏蔽环26的厚度大致相同。因此，电极板20和屏蔽环26形成大致相同的平面。 突起20a的主表面的直径为晶片W的直径的1.2〜1.5倍。电极板20例如由SiC形成。

公开(公告)号：US08021975B2

公开(公告)日：2011-09-20

申请号：US12005683

申请日：2007-12-28

申请人： Kotaro Miyatani ,  Kohei Kawamura ,  Toshihisa Nozawa ,  Takaaki Matsuoka

发明人： Kotaro Miyatani ,  Kohei Kawamura ,  Toshihisa Nozawa ,  Takaaki Matsuoka

IPC分类号： H01L21/4763

CPC分类号： C23C16/45574 ,  C23C16/36 ,  C23C16/511 ,  C23C16/56 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/3148 ,  H01L21/3185

摘要： A plasma processing method for forming a film on a substrate using a gas processed by a plasma. The plasma processing method for forming a film includes the steps of forming a CF film on the substrate by using a CaFb gas (here, a is a counting number, and b is a counting number which satisfies an equation of “b=2×a−2”), processing the CF film with the gas processed by the plasma, and forming an insulating film on the CF film processed by using an insulating material processed with the plasma.

摘要翻译： 一种使用由等离子体处理的气体在基板上形成膜的等离子体处理方法。 用于形成膜的等离子体处理方法包括以下步骤：通过使用CaFb气体在基板上形成CF膜（这里，a是计数数，b是满足式“b = 2×a -2“），用等离子体处理的气体处理CF膜，并在通过使用用等离子体处理的绝缘材料处理的CF膜上形成绝缘膜。

公开(公告)号：US07923819B2

公开(公告)日：2011-04-12

申请号：US12514173

申请日：2007-11-08

申请人： Tadahiro Ohmi ,  Seiji Yasuda ,  Atsutoshi Inokuchi ,  Takaaki Matsuoka ,  Kohei Kawamura

发明人： Tadahiro Ohmi ,  Seiji Yasuda ,  Atsutoshi Inokuchi ,  Takaaki Matsuoka ,  Kohei Kawamura

IPC分类号： H01L23/58

CPC分类号： H01L21/3127 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76829 ,  H01L21/76835 ,  H01L21/76843 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A wiring structure of a semiconductor device or the like includes an interlayer insulating film having a fluorocarbon film formed on an underlayer, and a conductor buried in the interlayer insulating film. The fluorocarbon film contains nitrogen and is low in dielectric constant, excellent in reproducibility and stable.

摘要翻译： 半导体器件等的布线结构包括具有形成在底层上的氟碳膜的层间绝缘膜和埋在层间绝缘膜中的导体。 氟碳膜含氮，介电常数低，重现性好，稳定性好。

公开(公告)号：US07897205B2

公开(公告)日：2011-03-01

申请号：US11910983

申请日：2006-04-07

申请人： Takatoshi Kameshima ,  Kohei Kawamura ,  Yasuo Kobayashi

发明人： Takatoshi Kameshima ,  Kohei Kawamura ,  Yasuo Kobayashi

IPC分类号： C23C16/00

CPC分类号： C23C16/4404 ,  C23C16/4581 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/3185

摘要： A film forming method is characterized in that the method is provided with a step of introducing a processing gas including inorganic silane gas into a processing chamber, in which a mounting table composed of ceramics including a metal oxide is arranged, and precoating an inner wall of the processing chamber including a surface of the mounting table with a silicon-containing nonmetal thin film; a step of mounting a substrate to be processed on the mounting table precoated with the nonmetal thin film; and a step of introducing a processing gas including organic silane gas into the processing chamber, and forming a silicon-containing nonmetal thin film on a surface of the substrate mounted on the mounting table.

摘要翻译： 一种成膜方法的特征在于该方法具有将包括无机硅烷气体的处理气体引入到其中布置由包括金属氧化物的陶瓷构成的安装台的处理室中的步骤， 所述处理室包括具有含硅非金属薄膜的所述安装台的表面; 将要处理的基板安装在预先涂覆有非金属薄膜的安装台上的步骤; 以及将含有有机硅烷气体的处理气体导入处理室，在安装在安装台上的基板的表面上形成含硅非金属薄膜的工序。

公开(公告)号：US07765466B2

公开(公告)日：2010-07-27

申请号：US10836217

申请日：2004-05-03

申请人： Kohei Kawamura

发明人： Kohei Kawamura

IPC分类号： G06F17/00 ,  G06F17/20

CPC分类号： H04N1/32 ,  H04N1/00127 ,  H04N1/00132

摘要： An information processing method for providing a communication terminal with a service. When editing in a lump of a plurality of held data to which the services are to be applied is received an instruction from the communication terminal, data capable of undergoing the accepted editing is automatically selected from the held data and the selected data is edited. With regard to data automatically judged to be incapable of undergoing the accepted editing, information that reports exclusion of this data from editing is transmitted to the communication terminal and is displayed thereby. That is, when plural items of held data are edited simultaneously, data not suited to this editing is excluded automatically, thereby enhancing user convenience in terms of operation. In addition, the fact that data not suited to editing has not been edited is clearly indicated to the user to prevent miss-recognition by the user.

摘要翻译： 一种用于向通信终端提供服务的信息处理方法。 从通信终端接收到要对其应用服务的多个保持数据的块中的编辑时，从保持的数据中自动选择能够接受接受的编辑的数据，并编辑所选择的数据。 关于自动判断为不能进行接受编辑的数据，报告将该数据排除在编辑之外的信息被发送到通信终端并被显示。 也就是说，当多个保持数据项被同时编辑时，自动排除不适合于该编辑的数据，从而提高用户操作方便性。 此外，清楚地向用户指示不适合于编辑的数据的事实，以防止用户的错误识别。

公开(公告)号：US20100025856A1

公开(公告)日：2010-02-04

申请号：US12531519

申请日：2008-03-28

申请人： Kohei Kawamura ,  Toshihisa Nozawa ,  Takaaki Matsuoka

发明人： Kohei Kawamura ,  Toshihisa Nozawa ,  Takaaki Matsuoka

IPC分类号： H01L23/522 ,  H01L21/768

CPC分类号： H01L21/31144 ,  C23C16/26 ,  H01L21/02074 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/3127 ,  H01L21/76808 ,  H01L21/76883 ,  Y10S438/951

摘要： A method for fabricating a semiconductor device includes the steps of (a) forming a plasma of a gas having carbon and fluorine, and forming an internal insulation film provided with a fluorine-doped carbon film formed on a substrate using the plasma; (b) forming a metal film on the internal insulation film; (c) etching the metal film according to a pattern to form a hard mask; (d) forming a concave part in the fluorine-doped carbon film by etching the fluorine-doped carbon film using the hard mask; (e) forming a film formation of a wiring material on the substrate for filling the concave part with the wiring material; (f) removing an excess part of the wiring material and the hard mask on the fluorine-doped carbon film for exposing a surface of the fluorine-doped carbon film; and (g) removing an oxide formed on the surface of the fluorine-doped film.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：（a）形成具有碳和氟的气体的等离子体，以及使用等离子体形成在基板上形成的氟掺杂碳膜的内部绝缘膜; （b）在内部绝缘膜上形成金属膜; （c）根据图案蚀刻金属膜以形成硬掩模; （d）通过使用硬掩模蚀刻氟掺杂碳膜，在氟掺杂碳膜中形成凹部; （e）在所述基板上形成布线材料，以用所述布线材料填充所述凹部; （f）除去氟掺杂碳膜上的布线材料和硬掩模的多余部分，以暴露氟掺杂碳膜的表面; 和（g）去除在氟掺杂膜的表面上形成的氧化物。

公开(公告)号：US20090061092A1

公开(公告)日：2009-03-05

申请号：US11910983

申请日：2006-04-07

申请人： Takatoshi Kameshima ,  Kohei Kawamura ,  Yasuo Kobayashi

发明人： Takatoshi Kameshima ,  Kohei Kawamura ,  Yasuo Kobayashi

IPC分类号： C23C16/36 ,  C23C16/42

CPC分类号： C23C16/4404 ,  C23C16/4581 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/3185

摘要： A film forming method is characterized in that the method is provided with a step of introducing a processing gas including inorganic silane gas into a processing chamber, in which a mounting table composed of ceramics including a metal oxide is arranged, and precoating an inner wall of the processing chamber including a surface of the mounting table with a silicon-containing nonmetal thin film; a step of mounting a substrate to be processed on the mounting table precoated with the nonmetal thin film; and a step of introducing a processing gas including organic silane gas into the processing chamber, and forming a silicon-containing nonmetal thin film on a surface of the substrate mounted on the mounting table.

摘要翻译： 一种成膜方法的特征在于该方法具有将包括无机硅烷气体的处理气体引入到其中布置由包括金属氧化物的陶瓷构成的安装台的处理室中的步骤， 所述处理室包括具有含硅非金属薄膜的所述安装台的表面; 将要处理的基板安装在预先涂覆有非金属薄膜的安装台上的步骤; 以及将含有有机硅烷气体的处理气体导入处理室，在安装在安装台上的基板的表面上形成含硅非金属薄膜的工序。

公开(公告)号：US07307019B2

公开(公告)日：2007-12-11

申请号：US10711649

申请日：2004-09-29

申请人： Kohei Kawamura ,  Akira Asano ,  Koutarou Miyatani ,  Joseph T. Hillman ,  Bentley Palmer

发明人： Kohei Kawamura ,  Akira Asano ,  Koutarou Miyatani ,  Joseph T. Hillman ,  Bentley Palmer

IPC分类号： H01L21/302

CPC分类号： H01L21/76826 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/02343 ,  H01L21/31058 ,  H01L21/3127 ,  H01L21/32051 ,  H01L21/76814

摘要： A method for treating a fluoro-carbon dielectric film for integration of the dielectric film into a semiconductor device. The method includes providing a substrate having a fluoro-carbon film deposited thereon, the film having an exposed surface containing contaminants, and treating the exposed surface with a supercritical carbon dioxide fluid to clean the exposed surface of the contaminants and provide surface termination. The supercritical carbon dioxide treatment improves adhesion and electrical properties of film structures containing a metal-containing film formed on the surface of the fluoro-carbon dielectric film.

摘要翻译： 一种用于处理用于将电介质膜整合到半导体器件中的氟碳电介质膜的方法。 该方法包括提供其上沉积有氟碳膜的基材，该膜具有含有污染物的暴露表面，并用超临界二氧化碳流体处理暴露表面以清洁污染物的暴露表面并提供表面终止。 超临界二氧化碳处理改善了在氟碳电介质膜的表面上形成的含有金属的膜的膜结构的粘附性和电性能。