-
公开(公告)号：US20060290429A1
公开(公告)日：2006-12-28
申请号：US10530349
申请日：2003-10-08
申请人： Takahiro Kishioka , Ken-ichi Mizusawa , Tomoyuki Enomoto , Rikimaru Sakamoto , Keisuke Kanayama , Yasuo Kawamura
发明人： Takahiro Kishioka , Ken-ichi Mizusawa , Tomoyuki Enomoto , Rikimaru Sakamoto , Keisuke Kanayama , Yasuo Kawamura
IPC分类号： H03F1/14
CPC分类号： H01L21/0276 , G03F7/038 , G03F7/091 , Y10S430/106
摘要： There is provided a composition for forming anti-reflective coating for anti-reflective coating that has a good absorption of light at a wavelength utilized for manufacturing a semiconductor device, that exerts a high protection effect against light reflection, that has a high dry etching rate compared with the photoresist layer. Concretely, the composition for forming anti-reflective coating contains a triazine trione compound, oligomer compound or polymer compound having hydroxyalkyl structure as substituent on nitrogen atom.
摘要翻译： 提供了一种用于形成用于抗反射涂层的抗反射涂层的组合物，其在用于制造半导体器件的波长处具有良好的吸收，其对光反射具有高保护效果，其具有高的干蚀刻速率 与光致抗蚀剂层相比。 具体地，用于形成抗反射涂层的组合物含有在氮原子上具有羟烷基结构作为取代基的三嗪三酮化合物，低聚物化合物或高分子化合物。
-
42.发明申请公开(公告)号：US20060216652A1
公开(公告)日：2006-09-28
申请号：US11444392
申请日：2006-06-01
IPC分类号： G03C5/00
CPC分类号： H01L21/0276 , C08G18/791 , C08G73/0655 , C09D179/04 , G03F7/091
摘要： A composition for forming anti-reflective coating for use in a lithographic process in manufacture of a semiconductor device, comprising as a component a resin containing cyanuric acid or a derivative thereof, or a resin containing a structural unit derived from cyanuric acid or a derivative thereof. The structural unit is preferably represented by formula (1): and can be contained in a main chain or a side chain, or both main chain and side chain of a resin. The anti-reflective coating for lithography obtained from the composition has a high reflection reducing effect and does not cause intermixing with a resist layer to give an excellent resist pattern. It has a higher selectivity in dry-etching compared with the resists.
摘要翻译： 一种用于制造半导体器件的光刻工艺中用于形成抗反射涂层的组合物，其包含含有三聚氰酸或其衍生物的树脂或含有衍生自氰尿酸或其衍生物的结构单元的树脂 。 结构单元优选由式（1）表示：并且可以包含在树脂的主链或侧链或主链和侧链中。 由组合物获得的用于光刻的抗反射涂层具有高的反射降低效果，并且不会引起与抗蚀剂层的混合，以产生优异的抗蚀剂图案。 与抗蚀剂相比，它在干蚀刻中具有更高的选择性。
-
公开(公告)号：US06927266B2
公开(公告)日：2005-08-09
申请号：US10078108
申请日：2002-02-20
IPC分类号： G03F7/004 , G03F7/038 , G03F7/09 , C08F122/40
摘要： The present invention relates to a bottom anti-reflective coat forming composition having the resin with the structural unit comprising maleimide or maleimide derivative for the lithography process in the preparation of semiconductor device. The resin comprises maleimide or derivative thereof in the principal chain or the side chain and its weight-average molecular weight is 700-1000000. The invention offers the bottom anti-reflective coating for lithography showing high anti-reflective effect, no intermixing with resist layer, excellent resist pattern, and large dry etching rate in comparison to resist.
摘要翻译： 本发明涉及具有该树脂的底部抗反射涂层形成组合物，该树脂具有包含马来酰亚胺或马来酰亚胺衍生物，用于制备半导体器件的光刻工艺。 该树脂包含主链或侧链中的马来酰亚胺或其衍生物，其重均分子量为700-1000000。 与抗蚀剂相比，本发明提供了用于光刻的底部抗反射涂层，其具有高抗反射效果，不与抗蚀剂层混合，优异的抗蚀剂图案和大的干蚀刻速率。
-
公开(公告)号：US08940470B2
公开(公告)日：2015-01-27
申请号：US12451474
申请日：2008-05-14
CPC分类号： G03F7/0233 , G02B3/00 , G03F7/0005 , G03F7/38
摘要： A material for a microlens having heat resistance, high resolution and high light-extraction efficiency is provided. A positive resist composition comprises an alkali-soluble polymer containing a unit structure having an aromatic fused ring or a derivative thereof, and a compound having an organic group which undergoes photodecomposition to yield an alkali-soluble group. The positive resist composition has coating film properties of a refractive index at a wavelength of 633 nm of 1.6 or more and a transmittance at wavelengths of 400 to 730 nm of 80% or more. A pattern forming method comprises applying the positive resist composition, drying the composition, exposing the composition to light, and developing the composition.
摘要翻译： 提供了具有耐热性，高分辨率和高光提取效率的微透镜材料。 正型抗蚀剂组合物包含含有具有芳香稠合环或其衍生物的单元结构的碱溶性聚合物和具有经历光分解以产生碱溶性基团的有机基团的化合物。 正型抗蚀剂组合物具有在633nm的折射率为1.6以上的折射率和400〜730nm的波长的透射率为80％以上的涂膜性质。 图案形成方法包括施加正性抗蚀剂组合物，干燥组合物，使组合物曝光并显影组合物。
-
公开(公告)号：US20120156598A1
公开(公告)日：2012-06-21
申请号：US13391761
申请日：2010-06-21
CPC分类号： C08F26/06 , G02B1/043 , G03F7/0005 , G03F7/0233 , G03F7/40 , C08L33/24
摘要： There is provided a photosensitive resin composition for a microlens. A photosensitive resin composition for a microlens, comprising a component (A), a component (B) and a component (C), wherein the component (A) is a polymer having a maleimide structural unit of Formula (1), the component (B) is a cross-linking agent, and the component (C) is a photosensitizing agent.
摘要翻译： 提供了用于微透镜的感光性树脂组合物。 包含组分（A），组分（B）和组分（C）的微透镜感光树脂组合物，其中组分（A）是具有式（1）的马来酰亚胺结构单元，组分（ B）是交联剂，组分（C）是光敏剂。
-
46.发明申请公开(公告)号：US20110318907A1
公开(公告)日：2011-12-29
申请号：US13132526
申请日：2009-11-26
申请人： Shinichi Maeda , Takahiro Kishioka
发明人： Shinichi Maeda , Takahiro Kishioka
CPC分类号： H01L51/052 , C08G18/584 , C08G18/792 , C08G18/80 , C08G18/8077 , H01L51/0036 , H01L51/0545
摘要： There is provided a novel composition for forming a gate insulating film taking into consideration also electrical characteristics after other processes such as wiring by irradiation with an ultraviolet ray and the like during the production of an organic transistor using a gate insulating film. A composition for forming a gate insulating film for a thin-film transistor comprising: a component (i): an oligomer compound or a polymer compound containing a repeating unit having a structure in which a nitrogen atom of a triazine-trione ring is bonded to a nitrogen atom of another triazine-trione ring through a hydroxyalkylene group; and a component (ii): a compound having two or more blocked isocyanate groups in one molecule thereof.
摘要翻译： 在使用栅极绝缘膜制造有机晶体管期间，还提供了一种用于形成栅极绝缘膜的新型组合物，其还考虑了在通过紫外线照射等布线等其他工艺之后的电特性。 一种用于形成薄膜晶体管的栅极绝缘膜的组合物，包括：组分（i）：低聚物化合物或含有具有三嗪 - 三酮环的氮原子键合的结构的重复单元的高分子化合物 另一个三嗪 - 三酮环的氮原子通过羟基亚烷基; 和组分（ii）：其一个分子中具有两个或多个封端异氰酸酯基团的化合物。
-
公开(公告)号：US07947424B2
公开(公告)日：2011-05-24
申请号：US10520461
申请日：2003-07-11
CPC分类号： G03F7/091 , H01L21/0276 , Y10S430/151
摘要： There is provided a composition for forming anti-reflective coating containing a urea compound substituted by hydroxyalkyl group or alkoxyalkyl group, and preferably a light absorbing compound and/or a light absorbing resin; a method of forming a anti-reflective coating for a semiconductor device by use of the composition; and a process for manufacturing a semiconductor device by use of the composition. The composition according to the present invention exhibits a good light-absorption to a light having a wavelength used for manufacturing a semiconductor device. Therefore, the composition exerts a high protection effect against light reflection, and has a high dry etching rate compared with photoresist layers.
摘要翻译： 提供一种用于形成抗羟基烷基或烷氧基烷基取代的尿素化合物的抗反射涂层的组合物，优选光吸收性化合物和/或光吸收树脂; 通过使用该组合物形成用于半导体器件的抗反射涂层的方法; 以及使用该组合物制造半导体器件的方法。 根据本发明的组合物对具有用于制造半导体器件的波长的光表现出良好的光吸收。 因此，该组合物对光反射具有高保护效果，与光致抗蚀剂层相比具有高的干蚀刻速率。
-
公开(公告)号：US20110086310A1
公开(公告)日：2011-04-14
申请号：US12996684
申请日：2009-07-07
CPC分类号： G03F7/0233 , C08F2/48 , C08F212/32 , C09D125/08 , G02B3/0012 , G03F7/094 , G03F7/40 , C08F220/06 , C08F212/08 , C08F212/14
摘要： There is provided a positive resist composition excellent in transparency, heat resistance, and refractive index particularly for forming a microlens and for forming a planarization film; and a microlens and a planarization film formed from the positive resist composition. A positive resist composition comprising a component (A): an alkali-soluble polymer comprising a unit structure having a biphenyl structure; a component (B): a compound having an organic group to be photolyzed to generate an alkali-soluble group; and a component (C): a solvent. The positive resist composition wherein the alkali-soluble polymer as the component (A) is a polymer comprising a unit structure of Formula (1): where when the total number of unit structures constituting the polymer (A) is assumed to be 1.0, the ratio n1 of the unit structure of Formula (1) constituting the polymer (A) satisfies 0.3≦n1≦1.0.
摘要翻译： 提供了特别用于形成微透镜和形成平坦化膜的透明性，耐热性和折射率优异的正性抗蚀剂组合物; 以及由正性抗蚀剂组合物形成的微透镜和平坦化膜。 一种正性抗蚀剂组合物，其包含组分（A）：包含具有联苯结构的单元结构的碱溶性聚合物; 成分（B）：具有被光解以产生碱溶性基团的有机基团的化合物; 和组分（C）：溶剂。 作为组分（A）的碱溶性聚合物是包含式（1）的单元结构的聚合物的正性抗蚀剂组合物：其中假设构成聚合物（A）的单元结构的总数为1.0时， 构成聚合物（A）的式（1）的单元结构的比n1满足0.3＆lt; nlE; n1＆nlE; 1.0。
-
49.发明授权公开(公告)号：US07846638B2
公开(公告)日：2010-12-07
申请号：US11979448
申请日：2007-11-02
申请人： Takahiro Kishioka , Ken-ichi Mizusawa , Tomoyuki Enomoto , Rikimaru Sakamoto , Keisuke Nakayama , Yasuo Kawamura
发明人： Takahiro Kishioka , Ken-ichi Mizusawa , Tomoyuki Enomoto , Rikimaru Sakamoto , Keisuke Nakayama , Yasuo Kawamura
CPC分类号： H01L21/0276 , G03F7/038 , G03F7/091 , Y10S430/106
摘要： There is provided a composition for forming anti-reflective coating for anti-reflective coating that has a good absorption of light at a wavelength utilized for manufacturing a semiconductor device, that exerts a high protection effect against light reflection, that has a high dry etching rate compared with the photoresist layer. Concretely, the composition for forming anti-reflective coating contains a triazine trione compound, oligomer compound or polymer compound having hydroxyalkyl structure as substituent on nitrogen atom.
摘要翻译： 提供了一种用于形成用于抗反射涂层的抗反射涂层的组合物，其在用于制造半导体器件的波长处具有良好的吸收，其对光反射施加高的保护效果，其具有高的干蚀刻速率 与光致抗蚀剂层相比。 具体地，用于形成抗反射涂层的组合物含有在氮原子上具有羟烷基结构作为取代基的三嗪三酮化合物，低聚物化合物或高分子化合物。
-
50.发明授权公开(公告)号：US07842620B2
公开(公告)日：2010-11-30
申请号：US12311742
申请日：2007-10-12
申请人： Satoshi Takei , Makoto Nakajima , Yasushi Sakaida , Hikaru Imamura , Keisuke Hashimoto , Takahiro Kishioka
发明人： Satoshi Takei , Makoto Nakajima , Yasushi Sakaida , Hikaru Imamura , Keisuke Hashimoto , Takahiro Kishioka
IPC分类号： H01L21/31
CPC分类号： H01L21/0332 , G03F7/0752 , G03F7/091 , G03F7/11 , H01L21/0274 , H01L21/31138 , H01L21/31144
摘要： There is provided a laminate used as an underlayer layer for a photoresist in a lithography process of a semiconductor device and a method for manufacturing a semiconductor device by using the laminate. The method comprising: laminating each layer of an organic underlayer film (layer A), a silicon-containing hard mask (layer B), an organic antireflective film (layer C) and a photoresist film (layer D) in this order on a semiconductor substrate. The method also comprises: forming a resist pattern in the photoresist film (layer D); etching the organic antireflective film (layer C) with the resist pattern; etching the silicon-containing hard mask (layer B) with the patterned organic antireflective film (layer C); etching the organic underlayer film (layer A) with the patterned silicon-containing hard mask (layer B); and processing the semiconductor substrate with the patterned organic underlayer film (layer A).
摘要翻译： 在半导体器件的光刻工艺中提供了用作光致抗蚀剂的下层的层压体，以及通过使用层压体制造半导体器件的方法。 该方法包括：在半导体上依次层叠有机下层膜（A层），含硅硬掩模（B层），有机抗反射膜（C层）和光致抗蚀剂膜（D层）的各层 基质。 该方法还包括：在光致抗蚀剂膜（层D）中形成抗蚀剂图案; 用抗蚀剂图案蚀刻有机抗反射膜（层C）; 用图案化的有机抗反射膜（C层）蚀刻含硅硬掩模（B层）; 用图案化的含硅硬掩模（B层）蚀刻有机下层膜（层A）; 并用图案化的有机下层膜（层A）处理半导体衬底。
-
-
-
-
-
-
-
-
-
搜索结果
61 条记录 (耗时 0.036 秒)