公开(公告)号：US08025728B2

公开(公告)日：2011-09-27

申请号：US12284470

申请日：2008-09-22

申请人： Mikiya Ichimura ,  Katsuhiro Imai ,  Chikashi Ihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Mikiya Ichimura ,  Katsuhiro Imai ,  Chikashi Ihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B29/38

CPC分类号： C30B9/00 ,  C30B29/403 ,  C30B29/406

摘要： A seed crystal is immersed in a melt containing a flux and a single crystal material in a growth vessel to produce a nitride single crystal on the seed crystal. A difference (TS-TB) of temperatures at a gas-liquid interface of the melt (TS) and at the lowermost part of the melt (TB) is set to 1° C. or larger and 8° C. or lower. Preferably, the substrate of seed crystal is vertically placed.

摘要翻译： 在生长容器中将晶种浸入含有助熔剂和单晶材料的熔体中，以在籽晶上产生氮化物单晶。 在熔体（TS）和熔体（TB）的最下部分的气 - 液界面处的温度差（TS-TB）设定为1℃或更大和8℃或更低。 优选地，将晶种的衬底垂直放置。

公开(公告)号：US09290861B2

公开(公告)日：2016-03-22

申请号：US13496982

申请日：2010-10-15

申请人： Takayuki Hirao ,  Takanao Shimodaira ,  Katsuhiro Imai

发明人： Takayuki Hirao ,  Takanao Shimodaira ,  Katsuhiro Imai

IPC分类号： C30B29/40 ,  C30B33/08 ,  H01L21/02

CPC分类号： C30B29/406 ,  C30B33/08 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254

摘要： Regarding a base substrate, a plurality of steps are formed stepwise on the principal surface (c-face). Each step has a height difference of 10 to 40 μm, and an edge is formed parallel to an a-face of a hexagonal crystal of GaN. Meanwhile, the terrace width of each step is set at a predetermined width. The predetermined width is set in such a way that after a GaN crystal is grown on the principal surface of the base substrate, the principal surface is covered up with grain boundaries when the grown GaN crystal is observed from the surface side. The plurality of steps can be formed through, for example, dry etching, sand blasting, lasing, and dicing.

摘要翻译： 关于基底，在主表面（c面）上逐步形成多个台阶。 每个步骤具有10至40μm的高差，并且与GaN的六方晶的a面平行地形成边缘。 同时，将各台阶的台阶宽度设定为规定的宽度。 预定宽度被设置为在GaN基晶体在基底基板的主表面上生长之后，当从表面侧观察生长的GaN晶体时，主表面被晶界覆盖。 可以通过例如干蚀刻，喷砂，激光和切割来形成多个步骤。

公开(公告)号：US07839471B2

公开(公告)日：2010-11-23

申请号：US11686229

申请日：2007-03-14

申请人： Mutsumi Matsuo ,  Katsuhiro Imai ,  Tomohiko Kojima ,  Yoshio Yamaguchi

发明人： Mutsumi Matsuo ,  Katsuhiro Imai ,  Tomohiko Kojima ,  Yoshio Yamaguchi

IPC分类号： G02F1/1335 ,  G02F1/1333

CPC分类号： G02F1/133555 ,  G02F1/133371 ,  G02F1/134309 ,  G02F1/13439

摘要： A liquid crystal device has a plurality of pixels arranged. The liquid crystal device includes a first substrate, a second substrate opposing the first substrate, liquid crystal provided between the first substrate and the second substrate, wires formed on the first substrate, and a reflective layer formed on the first substrate. Each pixel has a reflective display region formed by the reflective layer and a transparent display region without the reflective layer, and each wire is routed between two pixels in the transparent display region and in the reflective display region.

摘要翻译： 液晶装置具有多个像素排列。 液晶装置包括第一基板，与第一基板相对的第二基板，设置在第一基板和第二基板之间的液晶，形成在第一基板上的布线，以及形成在第一基板上的反射层。 每个像素具有由反射层形成的反射显示区域和没有反射层的透明显示区域，并且每条导线在透明显示区域和反射显示区域中的两个像素之间布线。

公开(公告)号：US07371972B2

公开(公告)日：2008-05-13

申请号：US10833258

申请日：2004-04-27

申请人： Satoshi Taguchi ,  Kazuo Oike ,  Hideki Uehara ,  Katsuhiro Imai ,  Chihiro Tanaka

发明人： Satoshi Taguchi ,  Kazuo Oike ,  Hideki Uehara ,  Katsuhiro Imai ,  Chihiro Tanaka

IPC分类号： H01R12/14

CPC分类号： G02F1/13458 ,  G02F1/1345 ,  G02F1/1365 ,  Y10T29/49174 ,  Y10T29/49194 ,  Y10T29/49208

摘要： An electrical wiring structure is provided which can be formed simultaneously when non-linear elements containing corrosion resistant metal wires and non-corrosion resistant metal wires are formed. In addition, a manufacturing method of the electrical wiring structure, an electro-optical device substrate provided with the electrical wiring structure, an electro-optical device, and a manufacturing method thereof are also provided. In particular, an oxide layer and the non-corrosion resistant metal wire are sequentially formed on a surface of the corrosion resistant metal wire. An exposed portion of the corrosion resistant metal wire is formed by removing part of the oxide layer. An electrical connection auxiliary member, such as a through-hole formed at the exposed portion or a conductive inorganic oxide film formed on the corrosion resistant metal wire and the exposed portion, is formed to electrically connect the corrosion resistant metal wire and the non-corrosion resistant metal wire.

摘要翻译： 提供了一种电气布线结构，当形成包含耐腐蚀金属线和不耐腐蚀金属线的非线性元件时，可以同时形成。 此外，还提供了电气布线结构的制造方法，设置有电布线结构的电光装置基板，电光装置及其制造方法。 特别地，在耐腐蚀金属线的表面上依次形成氧化物层和非耐腐蚀金属线。 通过去除部分氧化物层形成耐腐蚀金属线的暴露部分。 形成在暴露部分处形成的通孔的电连接辅助构件或形成在耐腐蚀金属线和暴露部分上的导电无机氧化物膜，以形成电连接耐腐蚀金属线和非腐蚀性 耐金属丝。

公开(公告)号：US20070076146A1

公开(公告)日：2007-04-05

申请号：US11524255

申请日：2006-09-21

申请人： Norihito Harada ,  Kimitaka Kamijo ,  Katsuhiro Imai ,  Toshihiro Otake

发明人： Norihito Harada ,  Kimitaka Kamijo ,  Katsuhiro Imai ,  Toshihiro Otake

IPC分类号： G02F1/1335

CPC分类号： G02F1/133371 ,  G02F1/133345 ,  G02F1/133555 ,  G02F1/133711

摘要： A liquid crystal device includes a pair of substrates, a liquid crystal layer provided between the substrates, and a plurality of sub-pixels each having a transmissive display region and a reflective display region. One of the substrates includes switching elements corresponding to the sub-pixels, lines connected to the switching elements, and an insulating film provided on the switching elements and the lines. The insulating film includes first recesses provided in the transmissive display regions, and second recesses provided along boundaries between the adjoining sub-pixels. At least a part of the insulating film other than the first and second recesses planarly overlaps with the reflective display regions. The thickness of the liquid crystal layer is smaller in the reflective display regions than in the transmissive display regions having the first recesses. The depth of the second recesses is smaller than the depth of the first recesses.

摘要翻译： 液晶装置包括一对基板，设置在基板之间的液晶层和分别具有透射显示区域和反射显示区域的多个子像素。 其中一个基板包括对应于子像素的开关元件，连接到开关元件的线，以及设置在开关元件和线上的绝缘膜。 绝缘膜包括设置在透射显示区域中的第一凹部和沿着邻接的子像素之间的边界设置的第二凹部。 除了第一和第二凹部以外的绝缘膜的至少一部分与反射显示区域平面地重叠。 反射显示区域中的液晶层的厚度比具有第一凹部的透射显示区域的厚度小。 第二凹部的深度小于第一凹部的深度。

公开(公告)号：US20120175740A1

公开(公告)日：2012-07-12

申请号：US13496982

申请日：2010-10-15

申请人： Takayuki Hirao ,  Takanao Shimodaira ,  Katsuhiro Imai

发明人： Takayuki Hirao ,  Takanao Shimodaira ,  Katsuhiro Imai

IPC分类号： H01L29/20 ,  H01L21/208

CPC分类号： C30B29/406 ,  C30B33/08 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254

摘要： Regarding a base substrate, a plurality of steps are formed stepwise on the principal surface (c-face). Each step has a height difference of 10 to 40 μm, and an edge is formed parallel to an a-face of a hexagonal crystal of GaN. Meanwhile, the terrace width of each step is set at a predetermined width. The predetermined width is set in such a way that after a GaN crystal is grown on the principal surface of the base substrate, the principal surface is covered up with grain boundaries when the grown GaN crystal is observed from the surface side. The plurality of steps can be formed through, for example, dry etching, sand blasting, lasing, and dicing.

摘要翻译： 关于基底，在主表面（c面）上逐步形成多个台阶。 每个步骤具有10至40μm的高差，并且与GaN的六方晶的a面平行地形成边缘。 同时，将各台阶的台阶宽度设定为规定的宽度。 预定宽度被设置为在GaN基晶体在基底基板的主表面上生长之后，当从表面侧观察生长的GaN晶体时，主表面被晶界覆盖。 可以通过例如干蚀刻，喷砂，激光和切割来形成多个步骤。

公开(公告)号：US20090095212A1

公开(公告)日：2009-04-16

申请号：US12284470

申请日：2008-09-22

申请人： Mikiya Ichimura ,  Katsuhiro Imai ,  Chikashi Ihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Mikiya Ichimura ,  Katsuhiro Imai ,  Chikashi Ihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B7/00

CPC分类号： C30B9/00 ,  C30B29/403 ,  C30B29/406

摘要： A seed crystal 9 is immersed in a melt 10 containing a flux and a single crystal material in a growth vessel 7 to produce a nitride single crystal 8 on the seed crystal 9. A difference (TS−TB) of temperatures at a gas-liquid interface of the melt (TS) and at the lowermost part of the melt (TB) is set to 1° C. or larger and 8° C. or lower. Preferably, the substrate of seed crystal is vertically placed.

摘要翻译： 将晶种9浸入生长容器7中含有助熔剂和单晶材料的熔体10中，以在晶种9上产生氮化物单晶8.气液中的温度差（TS-TB） 熔体（TS）和熔体（TB）的最下部的界面设定为1℃以上8℃以下。 优选地，将晶种的衬底垂直放置。

公开(公告)号：US07483099B2

公开(公告)日：2009-01-27

申请号：US11354194

申请日：2006-02-15

申请人： Kimitaka Kamijo ,  Hideki Kaneko ,  Katsuhiro Imai ,  Tomoyuki Nakano

发明人： Kimitaka Kamijo ,  Hideki Kaneko ,  Katsuhiro Imai ,  Tomoyuki Nakano

IPC分类号： G02F1/1335

CPC分类号： G02F1/133555 ,  G02F1/136227

摘要： A liquid crystal device includes a pair of substrates that face each other, a liquid crystal layer that is interposed between the pair of substrates, electrodes that are formed on opposing surfaces of the pair of substrates so as form a plurality of subpixel regions, in each of which a reflective display region having a light-reflective film reflecting light and a transmissive display region transmitting light are provided, and an insulating layer that is formed between one of the pair of substrates and the liquid crystal layer such that a thickness of the liquid crystal layer in the reflective display region is smaller than a thickness of the liquid crystal layer in the transmissive display region. The insulating layer is formed to have a first film thickness in the reflective display region, and is provided between the transmissive display region of a predetermined subpixel region and the transmissive display region of a subpixel region adjacent to the predetermined subpixel region. A portion of the insulating layer is formed to have a film thickness smaller than the first film thickness between the transmissive display region of the predetermined subpixel region and the transmissive display region of the subpixel region adjacent to the predetermined subpixel region.

摘要翻译： 液晶装置包括一对面对的基板，插入在一对基板之间的液晶层，形成在该一对基板的相对面上的电极，形成多个子像素区域 设置具有反射光反射膜的反射显示区域和透射光透射显示区域的反射显示区域，以及形成在一对基板之一和液晶层之间的绝缘层，使得液体的厚度 反射显示区域中的晶体层比透射显示区域中的液晶层的厚度小。 绝缘层形成为在反射显示区域具有第一膜厚度，并且设置在预定子像素区域的透射显示区域和与预定子像素区域相邻的子像素区域的透射显示区域之间。 绝缘层的一部分形成为具有比预定子像素区域的透射显示区域和与预定子像素区域相邻的子像素区域的透射显示区域之间的第一膜厚度小的膜厚度。

公开(公告)号：US20080225194A1

公开(公告)日：2008-09-18

申请号：US11984524

申请日：2007-11-19

申请人： Norihito Harada ,  Katsuhiro Imai

发明人： Norihito Harada ,  Katsuhiro Imai

IPC分类号： G02F1/1368 ,  G02F1/133 ,  G02F1/1343

CPC分类号： G02F1/136227 ,  G02F1/134363 ,  G02F1/1365 ,  G02F2001/134372 ,  G02F2001/13456

摘要： A liquid crystal device includes a first substrate and a second substrate opposite each other with a liquid crystal layer interposed therebetween, wherein the first substrate includes a signal line, a switching element electrically connected to the signal line, a first electrode electrically connected to the switching element, a wiring line, a dielectric film covering the first electrode, the switching element, and the wiring line, and a second electrode disposed on the dielectric film so as to be opposite the first electrode, and wherein the second electrode is drawn from the dielectric film toward an area where the dielectric film does not exist and is electrically connected to the wiring line through the area where the dielectric film does not exist.

摘要翻译： 液晶装置包括第一基板和彼此相对的液晶层的第二基板，其中第一基板包括信号线，电连接到信号线的开关元件，与开关电连接的第一电极 元件，布线，覆盖第一电极，开关元件和布线的电介质膜，以及设置在电介质膜上以与第一电极相对的第二电极，并且其中第二电极从 电介质膜朝向不存在电介质膜的区域，并且通过不存在电介质膜的区域与布线电连接。

公开(公告)号：US08440017B2

公开(公告)日：2013-05-14

申请号：US13208944

申请日：2011-08-12

申请人： Takanao Shimodaira ,  Takayuki Hirao ,  Katsuhiro Imai

发明人： Takanao Shimodaira ,  Takayuki Hirao ,  Katsuhiro Imai

IPC分类号： C30B19/00

CPC分类号： H01L29/2003 ,  C30B9/10 ,  C30B19/02 ,  C30B29/403 ,  C30B29/406

摘要： To grow a gallium nitride crystal, a seed-crystal substrate is first immersed in a melt mixture containing gallium and sodium. Then, a gallium nitride crystal is grown on the seed-crystal substrate under heating the melt mixture in a pressurized atmosphere containing nitrogen gas and not containing oxygen. At this time, the gallium nitride crystal is grown on the seed-crystal substrate under a first stirring condition of stirring the melt mixture, the first stirring condition being set for providing a rough growth surface, and the gallium nitride crystal is subsequently grown on the seed-crystal substrate under a second stirring condition of stirring the melt mixture, the second stirring condition being set for providing a smooth growth surface.

摘要翻译： 为了生长氮化镓晶体，首先将晶种衬底浸入含有镓和钠的熔融混合物中。 然后，在含有氮气且不含氧的加压气氛中加热熔融混合物，在晶种基板上生长氮化镓晶体。 此时，在搅拌熔融混合物的第一搅拌条件下，在籽晶基板上生长氮化镓晶体，将第一搅拌条件设定为提供粗糙的生长表面，然后氮化镓晶体在 晶种基材在搅拌熔融混合物的第二搅拌条件下，将第二搅拌条件设定为提供平滑的生长表面。