公开(公告)号：US07371972B2

公开(公告)日：2008-05-13

申请号：US10833258

申请日：2004-04-27

申请人： Satoshi Taguchi ,  Kazuo Oike ,  Hideki Uehara ,  Katsuhiro Imai ,  Chihiro Tanaka

发明人： Satoshi Taguchi ,  Kazuo Oike ,  Hideki Uehara ,  Katsuhiro Imai ,  Chihiro Tanaka

IPC分类号： H01R12/14

CPC分类号： G02F1/13458 ,  G02F1/1345 ,  G02F1/1365 ,  Y10T29/49174 ,  Y10T29/49194 ,  Y10T29/49208

摘要： An electrical wiring structure is provided which can be formed simultaneously when non-linear elements containing corrosion resistant metal wires and non-corrosion resistant metal wires are formed. In addition, a manufacturing method of the electrical wiring structure, an electro-optical device substrate provided with the electrical wiring structure, an electro-optical device, and a manufacturing method thereof are also provided. In particular, an oxide layer and the non-corrosion resistant metal wire are sequentially formed on a surface of the corrosion resistant metal wire. An exposed portion of the corrosion resistant metal wire is formed by removing part of the oxide layer. An electrical connection auxiliary member, such as a through-hole formed at the exposed portion or a conductive inorganic oxide film formed on the corrosion resistant metal wire and the exposed portion, is formed to electrically connect the corrosion resistant metal wire and the non-corrosion resistant metal wire.

摘要翻译： 提供了一种电气布线结构，当形成包含耐腐蚀金属线和不耐腐蚀金属线的非线性元件时，可以同时形成。 此外，还提供了电气布线结构的制造方法，设置有电布线结构的电光装置基板，电光装置及其制造方法。 特别地，在耐腐蚀金属线的表面上依次形成氧化物层和非耐腐蚀金属线。 通过去除部分氧化物层形成耐腐蚀金属线的暴露部分。 形成在暴露部分处形成的通孔的电连接辅助构件或形成在耐腐蚀金属线和暴露部分上的导电无机氧化物膜，以形成电连接耐腐蚀金属线和非腐蚀性 耐金属丝。

公开(公告)号：US08154675B2

公开(公告)日：2012-04-10

申请号：US12431197

申请日：2009-04-28

申请人： Katsuhiro Imai ,  Kanechika Kiyose ,  Kennosuke Kakehi ,  Satoshi Taguchi

发明人： Katsuhiro Imai ,  Kanechika Kiyose ,  Kennosuke Kakehi ,  Satoshi Taguchi

IPC分类号： G02F1/1333

CPC分类号： G02B5/3025 ,  G02F1/134363 ,  G02F2001/133334 ,  G02F2001/136218 ,  G02F2202/28 ,  H01L27/0248

摘要： A lateral electric field liquid crystal display panel is provided which includes a pair of substrates, a liquid crystal enclosed between the pair of substrates, liquid crystal-drive electrodes provided on one of the pair of substrates, a translucent electrostatic shielding layer provided on an exterior surface of at least one of the pair of substrates, and a polarizer disposed on the translucent electrostatic shielding layer, and in this liquid crystal display panel, the translucent electrostatic shielding layer has properties not to disappear by a chemical reaction with a material forming the polarizer.

摘要翻译： 提供了一种横向电场液晶显示面板，其包括一对基板，一对基板之间包围的液晶，设置在一对基板中的一个基板上的液晶驱动电极，设置在外部的半透明静电屏蔽层 一对基板中的至少一个基板的表面和设置在半透明静电屏蔽层上的偏振片，并且在该液晶显示面板中，半透明静电屏蔽层具有通过与形成偏振器的材料的化学反应而不消失的性质 。

公开(公告)号：US08025728B2

公开(公告)日：2011-09-27

申请号：US12284470

申请日：2008-09-22

申请人： Mikiya Ichimura ,  Katsuhiro Imai ,  Chikashi Ihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Mikiya Ichimura ,  Katsuhiro Imai ,  Chikashi Ihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B29/38

CPC分类号： C30B9/00 ,  C30B29/403 ,  C30B29/406

摘要： A seed crystal is immersed in a melt containing a flux and a single crystal material in a growth vessel to produce a nitride single crystal on the seed crystal. A difference (TS-TB) of temperatures at a gas-liquid interface of the melt (TS) and at the lowermost part of the melt (TB) is set to 1° C. or larger and 8° C. or lower. Preferably, the substrate of seed crystal is vertically placed.

摘要翻译： 在生长容器中将晶种浸入含有助熔剂和单晶材料的熔体中，以在籽晶上产生氮化物单晶。 在熔体（TS）和熔体（TB）的最下部分的气 - 液界面处的温度差（TS-TB）设定为1℃或更大和8℃或更低。 优选地，将晶种的衬底垂直放置。

公开(公告)号：US20100301358A1

公开(公告)日：2010-12-02

申请号：US12087048

申请日：2007-03-15

申请人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： H01L29/20 ,  C30B9/12 ,  H01L29/772 ,  H01L33/30 ,  H01L31/0304 ,  H01L21/20

CPC分类号： C30B9/10 ,  C30B19/02 ,  C30B19/063 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7787 ,  H01L33/0075

摘要： The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal.

摘要翻译： 本发明提供了一种制造半导体衬底的方法，该方法包括使氮（N）与作为III族元素的镓（Ga），铝（Al）或铟（In））在含有多个 选自碱金属和碱土金属的金属元素，从而生长III族氮化物基化合物半导体晶体。 在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。 在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度 在所述半导体晶体的生长过程中，所述III族氮化物基化合物半导体晶体。

公开(公告)号：US20090294909A1

公开(公告)日：2009-12-03

申请号：US12453743

申请日：2009-05-20

申请人： Seiji Nagai ,  Shiro Yamazaki ,  Yasuhide Yakushi ,  Takayuki Sato ,  Makoto Iwai ,  Katsuhiro Imai ,  Yusuke Mori ,  Yasuo Kitaoka

发明人： Seiji Nagai ,  Shiro Yamazaki ,  Yasuhide Yakushi ,  Takayuki Sato ,  Makoto Iwai ,  Katsuhiro Imai ,  Yusuke Mori ,  Yasuo Kitaoka

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： C30B9/12 ,  C30B9/10 ,  C30B29/403

摘要： An object of the present invention is to realize, by the flux process, the production of a high-quality n-type semiconductor crystal having high concentration of electrons. The method of the invention for producing an n-type Group III nitride-based compound semiconductor by the flux process, the method including preparing a melt by melting at least a Group III element by use of a flux; supplying a nitrogen-containing gas to the melt; and growing an n-type Group III nitride-based compound semiconductor crystal on a seed crystal from the melt. In the method, carbon and germanium are dissolved in the melt, and germanium is incorporated as a donor into the semiconductor crystal, to thereby produce an n-type semiconductor crystal.The mole percentage of germanium to gallium in the melt is 0.05 mol % to 0.5 mol %, and the mole percentage of carbon to sodium is 0.1 mol % to 3.0 mol %.

摘要翻译： 本发明的目的是通过磁通处理来实现具有高浓度电子的高质量n型半导体晶体的生产。 本发明的用于通过助熔剂制造n型III族氮化物基化合物半导体的方法，该方法包括通过使用助熔剂熔化至少III族元素来制备熔体; 向熔体供给含氮气体; 以及从所述熔体在籽晶上生长n型III族氮化物基化合物半导体晶体。 在该方法中，将碳和锗溶解在熔体中，并将​​锗作为供体掺入到半导体晶体中，从而制备n型半导体晶体。 熔体中锗与镓的摩尔比为0.05摩尔％〜0.5摩尔％，碳与钠的摩尔比为0.1摩尔％〜3.0摩尔％。

公开(公告)号：US07459023B2

公开(公告)日：2008-12-02

申请号：US11590930

申请日：2006-11-01

申请人： Shiro Yamazaki ,  Koji Hirata ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Yuji Yamada

发明人： Shiro Yamazaki ,  Koji Hirata ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Yuji Yamada

IPC分类号： C30B25/12

CPC分类号： C30B25/00 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406

摘要： The present invention provides a method for producing a Group III nitride compound semiconductor crystal, the semiconductor crystal being grown through the flux method employing a flux. At least a portion of a substrate on which the semiconductor crystal is to be grown is formed of a flux-soluble material. While the semiconductor crystal is grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal is grown. Alternatively, after the semiconductor crystal has been grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal has been grown. The flux-soluble material is formed of silicon. Alternatively, the flux-soluble material or the substrate is formed of a Group III nitride compound semiconductor having a dislocation density higher than that of the semiconductor crystal to be grown.

摘要翻译： 本发明提供一种用于制造III族氮化物化合物半导体晶体的方法，该半导体晶体通过使用焊剂的焊剂法生长。 待生长半导体晶体的基板的至少一部分由助熔剂材料形成。 半导体晶体在衬底的表面上生长时，该助熔剂材料从衬底的与生长半导体晶体的表面相反的表面溶解在焊剂中。 或者，在半导体晶体已经在基板的表面上生长之后，从基板的与半导体晶体已经生长的表面相对的表面的助熔剂中溶解助熔剂。 助熔剂材料由硅形成。 或者，助熔剂材料或衬底由位错密度高于要生长的半导体晶体的位错密度的III族氮化物化合物半导体形成。

公开(公告)号：US09677192B2

公开(公告)日：2017-06-13

申请号：US13135829

申请日：2011-07-15

申请人： Takanao Shimodaira ,  Katsuhiro Imai ,  Makoto Iwai ,  Takayuki Hirao

发明人： Takanao Shimodaira ,  Katsuhiro Imai ,  Makoto Iwai ,  Takayuki Hirao

IPC分类号： C30B9/12 ,  C30B29/40

CPC分类号： C30B9/12 ,  C30B29/403 ,  C30B29/406

摘要： A group 13 nitride crystal substrate according to the present invention is produced by growing a group 13 nitride crystal on a seed-crystal substrate by a flux method, wherein a content of inclusions in the group 13 nitride crystal grown in a region of the seed-crystal substrate except for a circumferential portion of the seed-crystal substrate, the region having an area fraction of 70% relative to an entire area of the seed-crystal substrate, is 10% or less, preferably 2% or less.

公开(公告)号：US09290861B2

公开(公告)日：2016-03-22

申请号：US13496982

申请日：2010-10-15

申请人： Takayuki Hirao ,  Takanao Shimodaira ,  Katsuhiro Imai

发明人： Takayuki Hirao ,  Takanao Shimodaira ,  Katsuhiro Imai

IPC分类号： C30B29/40 ,  C30B33/08 ,  H01L21/02

CPC分类号： C30B29/406 ,  C30B33/08 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254

摘要： Regarding a base substrate, a plurality of steps are formed stepwise on the principal surface (c-face). Each step has a height difference of 10 to 40 μm, and an edge is formed parallel to an a-face of a hexagonal crystal of GaN. Meanwhile, the terrace width of each step is set at a predetermined width. The predetermined width is set in such a way that after a GaN crystal is grown on the principal surface of the base substrate, the principal surface is covered up with grain boundaries when the grown GaN crystal is observed from the surface side. The plurality of steps can be formed through, for example, dry etching, sand blasting, lasing, and dicing.

摘要翻译： 关于基底，在主表面（c面）上逐步形成多个台阶。 每个步骤具有10至40μm的高差，并且与GaN的六方晶的a面平行地形成边缘。 同时，将各台阶的台阶宽度设定为规定的宽度。 预定宽度被设置为在GaN基晶体在基底基板的主表面上生长之后，当从表面侧观察生长的GaN晶体时，主表面被晶界覆盖。 可以通过例如干蚀刻，喷砂，激光和切割来形成多个步骤。

公开(公告)号：US08084281B2

公开(公告)日：2011-12-27

申请号：US12087048

申请日：2007-03-15

申请人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： H01L21/00

CPC分类号： C30B9/10 ,  C30B19/02 ,  C30B19/063 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7787 ,  H01L33/0075

摘要： The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal.

摘要翻译： 本发明提供了一种制造半导体衬底的方法，该方法包括使氮（N）与作为III族元素的镓（Ga），铝（Al）或铟（In））在含有多个 选自碱金属和碱土金属的金属元素，从而生长III族氮化物基化合物半导体晶体。 在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。 在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度 在所述半导体晶体的生长过程中，所述III族氮化物基化合物半导体晶体。

公开(公告)号：US07839471B2

公开(公告)日：2010-11-23

申请号：US11686229

申请日：2007-03-14

申请人： Mutsumi Matsuo ,  Katsuhiro Imai ,  Tomohiko Kojima ,  Yoshio Yamaguchi

发明人： Mutsumi Matsuo ,  Katsuhiro Imai ,  Tomohiko Kojima ,  Yoshio Yamaguchi

IPC分类号： G02F1/1335 ,  G02F1/1333

CPC分类号： G02F1/133555 ,  G02F1/133371 ,  G02F1/134309 ,  G02F1/13439

摘要： A liquid crystal device has a plurality of pixels arranged. The liquid crystal device includes a first substrate, a second substrate opposing the first substrate, liquid crystal provided between the first substrate and the second substrate, wires formed on the first substrate, and a reflective layer formed on the first substrate. Each pixel has a reflective display region formed by the reflective layer and a transparent display region without the reflective layer, and each wire is routed between two pixels in the transparent display region and in the reflective display region.

摘要翻译： 液晶装置具有多个像素排列。 液晶装置包括第一基板，与第一基板相对的第二基板，设置在第一基板和第二基板之间的液晶，形成在第一基板上的布线，以及形成在第一基板上的反射层。 每个像素具有由反射层形成的反射显示区域和没有反射层的透明显示区域，并且每条导线在透明显示区域和反射显示区域中的两个像素之间布线。