CMUTS WITH A HIGH-K DIELECTRIC
    41.
    发明申请
    CMUTS WITH A HIGH-K DIELECTRIC 有权
    具有高K电介质的CMUTS

    公开(公告)号:US20100202254A1

    公开(公告)日:2010-08-12

    申请号:US12671108

    申请日:2008-07-31

    IPC分类号: B06B1/06

    CPC分类号: B06B1/0292

    摘要: A capacitive ultrasound transducer includes a first electrode, a second electrode, and a third electrode, the third electrode including a central region disposed in collapsibly spaced relation with the first electrode, and a peripheral region disposed outward of the central region and disposed in collapsibly spaced relation with the second electrode. The transducer further includes a layer of a high dielectric constant material disposed between the third electrode and the first electrode, and between the third electrode and the second electrode. The transducer may be operable in a collapsed mode wherein the peripheral region of the third electrode oscillates relative to the second electrode, and the central region of the third electrode is fully collapsed with respect to the first electrode such that the dielectric layer is sandwiched therebetween. Piezoelectric actuation, such as d31 and d33 mode piezoelectric actuation, may further be included. A medical imaging system includes an array of such capacitive ultrasound transducers disposed on a common substrate.

    摘要翻译: 电容式超声波换能器包括第一电极,第二电极和第三电极,所述第三电极包括与所述第一电极以可折叠间隔开的关系设置的中心区域,以及设置在所述中心区域外侧的周边区域, 与第二电极的关系。 换能器还包括设置在第三电极和第一电极之间以及第三电极和第二电极之间的高介电常数材料层。 换能器可以以折叠模式操作,其中第三电极的周边区域相对于第二电极振荡,并且第三电极的中心区域相对于第一电极完全折叠,使得介电层夹在其间。 可以进一步包括诸如d31和d33模式压电致动的压电致动。 医疗成像系统包括设置在公共基底上的这种电容式超声换能器阵列。

    Electronic device
    42.
    发明申请
    Electronic device 有权
    电子设备

    公开(公告)号:US20070108875A1

    公开(公告)日:2007-05-17

    申请号:US10584042

    申请日:2004-12-20

    IPC分类号: H01L41/00

    摘要: The microelectromechanical system (MEMS) element (101) comprises a first electrode (310 that is present on a surface of sustate(30) an a movable element (40). This overlies at least partially the first electrode (31) and comprises a piezo-electric actuator, which movable element (40) is movable towards and from the substrate (30) by application of an actuation voltage between a first and a second position, in which first position it is separated from the substrate (30) by a gap. Herein the piezoelectric actuator comprises a piezoelectric layer (25) that is on opposite surfaces provided with a second and a third electrode (21,22) respectively, said second electrode (21) facing the substrate (30) and said third electrode (22) forming an input electrode of the MEMS element (101), so that a current path between through the MEMS element (101) comprises the piezoelectric layer (25) and the tunable gap.

    摘要翻译: 微机电系统(MEMS)元件(101)包括第一电极(310,其位于支撑件的表面上,具有可移动元件),其至少部分地覆盖第一电极(31),并且包括压电 电动致动器,其中所述可移动元件(40)可以通过施加第一和第二位置之间的致动电压而朝向和离开所述基板(30)移动,其中第一位置与所述基板(30)分隔开间隙 这里,压电致动器包括分别在设置有第二和第三电极(21,22)的相对表面上的压电层(25),所述第二电极(21)面向衬底(30)和所述第三电极(22) )形成MEMS元件(101)的输入电极,使得穿过MEMS元件(101)之间的电流路径包括压电层(25)和可调节间隙。

    Bulk wave resonator and bulk wave filter
    44.
    发明申请
    Bulk wave resonator and bulk wave filter 审中-公开
    体波谐振器和体波滤波器

    公开(公告)号:US20050199972A1

    公开(公告)日:2005-09-15

    申请号:US10514588

    申请日:2003-05-15

    CPC分类号: H03H9/564 H03H9/568

    摘要: A bulk wave resonator comprising: a substrate (1); a layer (3) of piezoelectric material deposited on the substrate; a first electrode (2) and a second electrode (4) which are arranged on opposite surfaces of the layer (3) of piezoelectric material, the overlapping area of the first electrode (2) and second electrode (4) defining the resonance range of the bulk wave resonator, characterized in that the overlapping area in an intersecting plane parallel to at least one of the electrodes (2, 4) has an aspect ratio in the range from 1 (b/a) 100, where a is the length and b the width of the bulk wave resonator. The invention also relates to a bulk wave filter comprising such bulk wave resonators.

    摘要翻译: 一种体波谐振器,包括:基板(1); 沉积在基板上的压电材料层(3); 布置在压电材料层(3)的相对表面上的第一电极(2)和第二电极(4),第一电极(2)和第二电极(4)的重叠区域限定谐振范围 所述体波谐振器的特征在于,与所述电极(2,4)中的至少一个平行的交叉平面中的重叠区域具有在1(b / a)100范围内的纵横比,其中a是所述长度和 b是体波谐振器的宽度。 本发明还涉及包括这种体波谐振器的体波滤波器。

    Thin film ultrasound transducer
    49.
    发明授权
    Thin film ultrasound transducer 有权
    薄膜超声波换能器

    公开(公告)号:US09440258B2

    公开(公告)日:2016-09-13

    申请号:US13812640

    申请日:2011-07-12

    IPC分类号: B06B1/06

    摘要: The present invention relates to a transducer (11) comprising—a membrane (31) configured to change shape in response to a force, the membrane (31) having a first major surface (16) and a second major surface (17), —a piezoelectric layer (18) formed over the first major surface (16) of the membrane (31), the piezoelectric layer (18) having an active portion, —first and second electrodes (19) in contact with the piezoelectric layer (18), wherein an electric field between the first and second electrodes (19) determines the mechanical movement of the piezoelectric layer (18), —support structures (40) at the second major surface (17) of the membrane (15) on adjacent sides of the active portion of the piezoelectric layer (18), at least part of the support structures (40) forming walls perpendicular, or at least not parallel, to the second major surface (17) of the membrane (31), so as to form a trench (41) of any shape underlying the active portion, so that an ultrasound transducer is obtained with a high output pressure at the support side than at the opposite side. The invention also relates to a method of forming such a transducer, and an array comprising at least one transducer of the like.

    摘要翻译: 本发明涉及一种换能器(11),其包括 - 被配置为响应于力而改变形状的膜(31),所述膜(31)具有第一主表面(16)和第二主表面(17), - 形成在膜(31)的第一主表面(16)上方的压电层(18),压电层(18)具有有源部分,与压电层(18)接触的第一和第二电极(19) ,其中所述第一和第二电极(19)之间的电场确定所述压电层(18)的机械运动, - 在所述膜(15)的相邻侧上的所述膜(15)的第二主表面(17)处支撑结构(40) 压电层(18)的有效部分,至少部分支撑结构(40)形成与膜(31)的第二主表面(17)垂直或至少不平行的壁,以便形成 在活动部分下方的任何形状的沟槽(41),使得超声波换能器 s在支撑侧的高输出压力获得,而不是在相对侧。 本发明还涉及一种形成这种换能器的方法,以及包括至少一个这样的换能器的阵列。