SURFACE MOUNTING TYPE ELECTRONIC COMPONENTS AND MANUFACTURING METHOD OF THE SAME
    41.
    发明申请
    SURFACE MOUNTING TYPE ELECTRONIC COMPONENTS AND MANUFACTURING METHOD OF THE SAME 审中-公开
    表面安装型电子元件及其制造方法

    公开(公告)号:US20080073108A1

    公开(公告)日:2008-03-27

    申请号:US11861199

    申请日:2007-09-25

    IPC分类号: H05K1/03 B05D5/12

    CPC分类号: H01G4/2325 H01G4/005

    摘要: One inventive aspect relates to a surface mounting type electronic component excellent in a mounting property and having desired equivalent series resistance (ESR). The component has an electronic component body, and at least a pair of terminal electrodes formed on a surface of the electronic component body. The terminal electrode has a conductive resin layer formed between a substrate metal layer and a metal plating layer. The first and second layers each comprise a curable resin and metal particles. The first layer is lower in the content of metal particles than the second layer.

    摘要翻译: 本发明的一个方面涉及安装性能优异且具有期望的等效串联电阻(ESR)的表面安装型电子部件。 该部件具有电子部件主体,形成在电子部件主体的表面上的至少一对端子电极。 端子电极具有在基板金属层和金属镀层之间形成的导电性树脂层。 第一层和第二层各自包含可固化树脂和金属颗粒。 第一层的金属颗粒含量低于第二层。

    Flame-retardant resin composition
    42.
    发明申请
    Flame-retardant resin composition 审中-公开
    阻燃树脂组合物

    公开(公告)号:US20070259991A1

    公开(公告)日:2007-11-08

    申请号:US11797213

    申请日:2007-05-01

    IPC分类号: C08K9/00

    CPC分类号: C08K9/06 C08K9/08

    摘要: The invention provides a flame-retardant thermoplastic resin composition compounded with a flame-retardant powder which, in addition to the excellent dispersibility in resins and excellent flame retardancy imparted to the resin, can reduce the amount of low molecular weight siloxanes emitted from the resin to 10 ppm or smaller, along with a flame-retardant resin composition by compounding with this flame-retardant powder. This flame-retardant powder is prepared by treating the surface of an inorganic flame-retardant powder under pressurization with an organopolysiloxane represented by the average structural formula given below and having a mass-average molecular weight of 100,000 to 3,500,000, wherein said organopolysiloxane contains not more than 2,000 ppm of low molecular weight siloxanes having from 2 to 10 silicon atoms per molecule, as determined by extraction with acetone and wherein the amount of said organopolysiloxane is 0.1 to 30 mass % relative to the mass of the inorganic flame-retardant powder: (in formula (1), each R1 is a substituent independently selected from C1 to C10 monovalent hydrocarbon groups and hydroxyl group and n is a number that provides the organopolysiloxane with a mass-average molecular weight of 100,000 to 3,500,000).

    摘要翻译: 本发明提供一种与阻燃粉末混合的阻燃热塑性树脂组合物,除了在树脂中具有优异的分散性和赋予树脂的优异的阻燃性之外,还可以将从树脂排放的低分子量硅氧烷的量减少到 10ppm以下,以及通过与该阻燃粉末配混的阻燃性树脂组合物。 这种阻燃粉末是通过用由下列给出的平均结构式代表的有机聚硅氧烷加压处理无机阻燃粉末的表面而制备的,其质均分子量为100,000至3,500,000,其中所述有机聚硅氧烷不含 通过用丙酮萃取测定的每分子具有2至10个硅原子的低分子量硅氧烷的2000ppm,并且其中所述有机聚硅氧烷的量相对于无机阻燃粉末的质量为0.1至30质量%:( 在式(1)中,每个R 1是独立地选自C 1至C 10单价烃基和羟基的取代基,n是 提供质量平均分子量为100,000〜3,500,000的有机聚硅氧烷的数量)。

    SURFACE-MOUNTING CERAMIC ELECTRONIC COMPONENT
    43.
    发明申请
    SURFACE-MOUNTING CERAMIC ELECTRONIC COMPONENT 审中-公开
    表面安装陶瓷电子元件

    公开(公告)号:US20070242416A1

    公开(公告)日:2007-10-18

    申请号:US11696067

    申请日:2007-04-03

    IPC分类号: H01G4/06 H01G2/20 C04B35/64

    摘要: One inventive aspect relates to a surface-mounting ceramic electronic component including a terminal electrode structure which improves the mechanical strength of the electronic component. In the terminal electrode structure, an intermediate metal layer is formed on a base metal layer, and a conductive resin layer is formed thereon. A surface of the base metal layer in which a common material, an oxide film, glass frit or the like exists is covered with the intermediate metal layer, and the conductive resin layer is adhered to the intermediate metal layer as a tight metal surface.

    摘要翻译: 一个发明方面涉及一种表面安装陶瓷电子部件,其包括提高电子部件的机械强度的端子电极结构。 在端子电极结构中,在基底金属层上形成中间金属层,在其上形成导电性树脂层。 其中存在普通材料,氧化膜,玻璃料等的基底金属层的表面被中间金属层覆盖,并且导电树脂层作为紧密的金属表面粘附到中间金属层。

    Position detection device, apparatus using the same, exposure apparatus, and device manufacturing method using the same
    44.
    发明授权
    Position detection device, apparatus using the same, exposure apparatus, and device manufacturing method using the same 失效
    位置检测装置,使用其的装置,曝光装置和使用其的装置制造方法

    公开(公告)号:US06946666B2

    公开(公告)日:2005-09-20

    申请号:US09082587

    申请日:1998-05-21

    IPC分类号: G03F7/20 G03F9/00 A61N5/00

    摘要: An exposure apparatus for irradiating exposure light onto a surface of an object to be exposed applied with a resist to form a pattern on the surface, wherein near-field light is used as the exposure light. The apparatus includes an alignment system for performing alignment using the near-field light, the alignment system detecting position information of the object to be exposed by irradiating light from an illumination device onto an alignment mark formed on the surface of the object to be exposed, and an alignment probe for detecting near-field light in the vicinity of the alignment mark.

    摘要翻译: 一种曝光装置,用于将曝光光照射到被照射物体的表面上,施加抗蚀剂以在表面上形成图案,其中使用近场光作为曝光光。 该装置包括用于使用近场光进行对准的对准系统,对准系统通过将照明装置的光照射到形成在被曝光物体的表面上的对准标记来检测要曝光的物体的位置信息, 以及用于检测对准标记附近的近场光的对准探针。

    Semiconductor memory device and manufacturing method therefor
    45.
    发明授权
    Semiconductor memory device and manufacturing method therefor 有权
    半导体存储器件及其制造方法

    公开(公告)号:US06936891B2

    公开(公告)日:2005-08-30

    申请号:US10414720

    申请日:2003-04-16

    摘要: A semiconductor memory device, adapted for storing plural bits per cell to be able to accomplish high storage density by a simplified structure, includes a plurality of first gate electrodes extending parallel to one another along one direction and a plurality of second gate electrodes extending in a direction of intersecting the first gate electrodes, in which a diffusion region is provided on each of a plurality of divisions demarcated in a matrix-like pattern by first and second electrodes on a substrate surface. One of the divisions, the four sides of which are defined by two neighboring first gate electrodes and two neighboring second gate electrodes, has four independently accessible bits, and is connected by a contact (CT) with a diffusion region in the division. There are provided a plurality of interconnections connected via contacts to the diffusion regions of other divisions in the plural matrix-like divisions lying on the line of extension of the aforementioned diagonal line. A plurality of the aforementioned interconnections are arranged for extending parallel to one another in the memory cell array in an oblique direction relative to the lattice of the first and second electrodes.

    摘要翻译: 一种半导体存储器件,适用于通过简化的结构存储能够实现高存储密度的每个单元的多个位,包括沿着一个方向彼此平行延伸的多个第一栅电极和沿着一个方向延伸的多个第二栅电极 与基板表面上的第一和第二电极以矩阵状图案划分的多个部分中的每一个上设置扩散区域的第一栅电极相交的方向。 其中一个划分的四个侧面由两个相邻的第一栅电极和两个相邻的第二栅电极限定,具有四个独立可访问的位,并且通过在分割中的扩散区的接触(CT)连接。 通过接触将多个互连件连接到位于上述对角线的延伸线上的多个矩阵状部分中的其它部分的扩散区域。 多个上述互连布置成相对于第一和第二电极的格子在倾斜方向上在存储单元阵列中彼此平行地延伸。

    Fault diagnosis apparatus of fuel evaporation/dissipation prevention system
    47.
    发明授权
    Fault diagnosis apparatus of fuel evaporation/dissipation prevention system 有权
    燃油蒸发/消散预防系统故障诊断装置

    公开(公告)号:US06834227B2

    公开(公告)日:2004-12-21

    申请号:US10601622

    申请日:2003-06-24

    IPC分类号: F02M2508

    CPC分类号: F02M25/0809

    摘要: When a first restoring pressure amount, measured after a fault diagnosis object region is in a reduced pressure state, exceeds a first or second judgment value, a second restoring pressure amount is measured by releasing the fault diagnosis object region to the atmosphere and then sealing it. When the first restoring pressure amount is between the first and second judgment values, the second restoring pressure amount is compared with a third judgment value. When the first restoring pressure amount exceeds the second judgment value, the second restoring pressure amount is compared with a fourth judgment value. Leak is determined to exist when the first restoring pressure amount exceeds the first judgment value and the second restoring pressure amount does not exceed the third judgment value, or when the first restoring pressure amount exceeds the second judgment value and the second restoring pressure amount does not exceed the fourth judgment value.

    摘要翻译: 当在故障诊断对象区域处于减压状态之后测量的第一恢复压力量超过第一或第二判断值时,通过将故障诊断对象区域释放到大气中然后密封来测量第二恢复压力量 。 当第一恢复压力量在第一和第二判断值之间时,将第二恢复压力量与第三判断值进行比较。 当第一恢复压力量超过第二判断值时,将第二恢复压力量与第四判断值进行比较。 当第一恢复压力量超过第一判断值并且第二恢复压力量不超过第三判断值时,或当第一恢复压力量超过第二判断值且第二恢复压力量不为第二恢复压力量时,确定存在泄漏 超过第四判断值。

    Nonreciprocal circuit device having a protruding electrode
    48.
    发明授权
    Nonreciprocal circuit device having a protruding electrode 失效
    具有突出电极的不可逆电路装置

    公开(公告)号:US06734754B2

    公开(公告)日:2004-05-11

    申请号:US10274859

    申请日:2002-10-22

    IPC分类号: H01P136

    CPC分类号: H01P1/387

    摘要: A nonreciprocal circuit device includes a metal casing (upper and lower casing members), a permanent magnet, a center electrode assembly, and a multilayer substrate. The multilayer substrate has terminal electrodes that protrude therefrom and includes a resistance element and matching capacitor elements. The terminal electrodes of the multilayer substrate are fabricated by providing through holes in constraining layers and, after firing, removing the constraining layers except for the through holes. The bottom section of the lower metal casing member is arranged among the terminal electrodes. A ground electrode that covers substantially the entire lower surface of the multilayer substrate is electrically connected to the bottom section of the lower metal casing member. The height of the protrusions of the terminal electrodes extending from the lower surface of the multilayer substrate is substantially equal to a thickness (about 0.1 mm to about 0.2 mm) of the lower metal casing member.

    摘要翻译: 不可逆电路装置包括金属外壳(上下壳体构件),永磁体,中心电极组件和多层基板。 多层基板具有从其突出的端子电极,并且包括电阻元件和匹配的电容器元件。 多层基板的端子电极通过在约束层中设置通孔并在烧制之后除去除通孔之外的约束层来制造。 下部金属壳体部件的底部设置在端子电极之间。 基本上覆盖多层基板的整个下表面的接地电极电连接到下金属外壳构件的底部。 从多层基板的下表面延伸的端子电极的突起的高度基本上等于下部金属外壳构件的厚度(约0.1mm至约0.2mm)。

    Method of making a flash memory device with an inverted tapered floating gate
    49.
    发明授权
    Method of making a flash memory device with an inverted tapered floating gate 有权
    制造具有倒锥形浮动栅极的闪存器件的方法

    公开(公告)号:US06670243B2

    公开(公告)日:2003-12-30

    申请号:US10233798

    申请日:2002-09-03

    申请人: Kenji Saito

    发明人: Kenji Saito

    IPC分类号: H01L21336

    摘要: In a semiconductor memory device such as a flash memory, a field oxide film is formed to a forward taper shape on a semiconductor substrate, and a floating gate is formed to a reverse (inverted) taper shape between the field oxide film over the semiconductor substrate.

    摘要翻译: 在诸如闪速存储器的半导体存储器件中,在半导体衬底上形成正向锥形形状的场氧化膜,并且在半导体衬底之间的场氧化膜之间形成反向(倒置)锥形形状的浮栅 。