公开(公告)号：US20060284175A1

公开(公告)日：2006-12-21

申请号：US11509605

申请日：2006-08-25

申请人： Masato Hiramatsu ,  Yoshinobu Kimura ,  Hiroyuki Ogawa ,  Masayuki Jyumonji ,  Masakiyo Matsumura

发明人： Masato Hiramatsu ,  Yoshinobu Kimura ,  Hiroyuki Ogawa ,  Masayuki Jyumonji ,  Masakiyo Matsumura

IPC分类号： H01L31/00

CPC分类号： H01L21/0268 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02686 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

摘要： A thin-film semiconductor substrate includes an insulative substrate, an amorphous semiconductor thin film that is formed on the insulative substrate, and a plurality of alignment marks that are located on the semiconductor thin film and are indicative of reference positions for crystallization.

公开(公告)号：US07105419B2

公开(公告)日：2006-09-12

申请号：US10879165

申请日：2004-06-30

申请人： Masato Hiramatsu ,  Yoshinobu Kimura ,  Hiroyuki Ogawa ,  Masayuki Jyumonji ,  Masakiyo Matsumura

发明人： Masato Hiramatsu ,  Yoshinobu Kimura ,  Hiroyuki Ogawa ,  Masayuki Jyumonji ,  Masakiyo Matsumura

IPC分类号： H01L21/30 ,  H01L21/76 ,  H01L21/46

CPC分类号： H01L21/0268 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02686 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

摘要： A thin-film semiconductor substrate includes an insulative substrate, an amorphous semiconductor thin film that is formed on the insulative substrate, and a plurality of alignment marks that are located on the semiconductor thin film and are indicative of reference positions for crystallization.

公开(公告)号：US20060124971A1

公开(公告)日：2006-06-15

申请号：US11335470

申请日：2006-01-20

申请人： Masato Hiramatsu ,  Yoshinobu Kimura ,  Hiroyuki Ogawa ,  Masayuki Jyumonji ,  Yoshitaka Yamamoto ,  Masakiyo Matsumura

发明人： Masato Hiramatsu ,  Yoshinobu Kimura ,  Hiroyuki Ogawa ,  Masayuki Jyumonji ,  Yoshitaka Yamamoto ,  Masakiyo Matsumura

IPC分类号： H01L29/768

CPC分类号： H01L29/78696 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： A semiconductor device includes a non-single-crystal semiconductor film, a support substrate that supports the non-single-crystal semiconductor film, and an active device having a part of the non-single-crystal semiconductor film as a channel region. In particular, the channel region has an oxygen concentration not higher than 1×1018 atoms/cm3 and a carbon concentration not higher than 1×1018 atoms/cm3.

摘要翻译： 半导体器件包括非单晶半导体膜，支撑非单晶半导体膜的支撑衬底和具有部分非单晶半导体膜作为沟道区的有源器件。 特别地，沟道区的氧浓度不高于1×10 18原子/ cm 3，碳浓度不高于1×10 18原子 / cm 3。

公开(公告)号：US07172841B2

公开(公告)日：2007-02-06

申请号：US10734248

申请日：2003-12-15

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Yoshinobu Kimura

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Yoshinobu Kimura

IPC分类号： G03F1/00

CPC分类号： H01L21/02686 ,  B23K26/066 ,  B23K2101/40 ,  H01L21/02532 ,  H01L21/02678

摘要： A phase shift mask is arranged before a laser device through a beam expander, a homogenizer and a mirror, and a processed substrate is set on an opposed surface of the phase shift mask with an image forming optical system therebetween. The processed substrate is held at a predetermined position by using a substrate chuck such as a vacuum chuck or an electrostatic chuck.

摘要翻译： 相移掩模通过光束扩展器，均化器和反射镜布置在激光装置之前，并且处理后的基板被设置在相移掩模的相对表面上，其间具有成像光学系统。 通过使用诸如真空卡盘或静电卡盘的基板卡盘将经处理的基板保持在预定位置。

公开(公告)号：US09191030B2

公开(公告)日：2015-11-17

申请号：US13693360

申请日：2012-12-04

申请人： Akihiro Sakata ,  Yoshinobu Kimura

发明人： Akihiro Sakata ,  Yoshinobu Kimura

IPC分类号： H03M13/29 ,  G06F11/10

CPC分类号： H03M13/29 ,  G06F11/1004 ,  H03M13/2906

摘要： A memory controller includes a first error detection code generator for generating a first error detection code for data received from a host, a controller to write the data and the first error detection code to nonvolatile memory and to read the data and the first error detection code from the nonvolatile memory, an error detector to perform an error detection based on the data and the first error detection code that are read from the nonvolatile memory, a second error detection code generator to generate a second detection error code based on the data read from the nonvolatile memory, and a mismatch code generator to generate a mismatch code signaling the presence of an error in the data, wherein either the second error detection code or the mismatch code is selected based on the error detection and sent to the host.

摘要翻译： 存储器控制器包括：第一错误检测码发生器，用于产生用于从主机接收的数据的第一错误检测码，控制器将数据和第一错误检测码写入非易失性存储器，并读取数据和第一错误检测码 来自所述非易失性存储器的误差检测器，基于从所述非易失性存储器读取的所述数据和所述第一检错码执行错误检测;第二检错码发生器，用于基于从所述非易失性存储器读取的数据产生第二检测错误代码; 所述非易失性存储器和不匹配码发生器产生用于发信号通知所述数据中存在错误的不匹配码，其中所述第二错误检测码或所述不匹配码是基于所述错误检测被选择的并被发送给所述主机。

公开(公告)号：US07413604B2

公开(公告)日：2008-08-19

申请号：US10942911

申请日：2004-09-17

申请人： Kazuo Takeda ,  Masakazu Saito ,  Yukio Takasaki ,  Hironobu Abe ,  Makoto Ohkura ,  Yoshinobu Kimura ,  Takeo Shiba

发明人： Kazuo Takeda ,  Masakazu Saito ,  Yukio Takasaki ,  Hironobu Abe ,  Makoto Ohkura ,  Yoshinobu Kimura ,  Takeo Shiba

IPC分类号： C30B1/02

CPC分类号： H01L21/02686 ,  C30B13/00 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L29/6675 ,  H01L29/78672

摘要： The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irradiation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.

摘要翻译： 本发明提供一种多晶硅膜的制造方法，其特征在于，包括通过在基板上设置硅膜的光照射形成多晶硅膜的步骤，以及选择平均粒径在 500nm以上的样品。 根据本发明，可以稳定地生产高性能多晶硅TFT液晶显示器。

公开(公告)号：US20060073664A1

公开(公告)日：2006-04-06

申请号：US11242961

申请日：2005-10-05

申请人： Masao Kondo ,  Nobuyuki Sugii ,  Yoshinobu Kimura

发明人： Masao Kondo ,  Nobuyuki Sugii ,  Yoshinobu Kimura

IPC分类号： H01L21/336

CPC分类号： H01L29/7835 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/6659 ,  H01L29/66659

摘要： Provided is a technology capable of suppressing a reduction in electron mobility in a channel region formed in a strained silicon layer. A p type strained silicon layer is formed over a p type silicon-germanium layer formed over a semiconductor substrate. The p type strained layer has a thickness adjusted to be thicker than the critical film thickness at which no misfit dislocation occurs. Accordingly, misfit dislocations occur in the vicinity of the interface between the p type strained silicon layer and p type silicon-germanium layer. At a position which is below the end of a gate electrode and at which misfit dislocations occur, the impurity concentration of the n type strained silicon layer and n type silicon-germanium layer is 1×1019 cm−3 or less.

摘要翻译： 提供了能够抑制形成在应变硅层中的沟道区域中的电子迁移率降低的技术。 在半导体衬底上形成的p型硅 - 锗层上形成p型应变硅层。 p型应变层的厚度被调整为比没有失配位错发生的临界膜厚度更厚。 因此，在p型应变硅层和p型硅 - 锗层之间的界面附近发生失配位错。 在位于栅电极末端并发生失配位错的位置处，n型应变硅层和n型硅 - 锗层的杂质浓度为1×10 19 cm -3， -3以下。

公开(公告)号：US06903371B2

公开(公告)日：2005-06-07

申请号：US10773950

申请日：2004-02-06

申请人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

发明人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L21/336 ,  H01L29/786 ,  H01L29/04

CPC分类号： H01L29/66757 ,  H01L29/78675 ,  Y10S438/969

摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.

摘要翻译： 激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中 晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有高电子迁移率为200cm 2 / Vs以上。

公开(公告)号：US06657227B2

公开(公告)日：2003-12-02

申请号：US09910314

申请日：2001-07-19

申请人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

发明人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

IPC分类号： H01L2904

CPC分类号： H01L29/66757 ,  H01L29/78675 ,  Y10S438/969

摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.

摘要翻译： 激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中 晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有200cm 2 / Vs以上的高电子迁移率。

公开(公告)号：US4121355A

公开(公告)日：1978-10-24

申请号：US774584

申请日：1977-03-07

申请人： Chisaburo Kimoto ,  Katsuhiko Itasaka ,  Ryu Tanaka ,  Yoshinobu Kimura

发明人： Chisaburo Kimoto ,  Katsuhiko Itasaka ,  Ryu Tanaka ,  Yoshinobu Kimura

IPC分类号： G09B7/06 ,  G09B19/06

CPC分类号： G09B7/063 ,  G09B19/06

摘要： A learning device includes a learning sheet having for each question a set of answers, only one of which is the correct answer. The sheet is mounted on a base plate having a series of conducting bands which are tortuous or undulating so that the correct answers corresponding to the appropriate associated conducting bands will not be arranged in a straight line nor made obvious to the person using the learning device.

摘要翻译： 学习装置包括一个学习单，其中每个问题都有一组答案，其中只有一个是正确答案。 片材安装在具有曲折或起伏的一系列导电带的基板上，使得对应于适当的相关导电带的正确答案将不会排列成直线，也不会对使用学习装置的人造成明显的影响。