Tapered roller bearing
    41.
    发明申请
    Tapered roller bearing 有权
    圆锥滚子轴承

    公开(公告)号:US20070110352A1

    公开(公告)日:2007-05-17

    申请号:US11652683

    申请日:2007-01-12

    IPC分类号: F16C33/58

    摘要: A tapered roller bearing includes an outer race, an inner race, a plurality of tapered rollers, and a cage. A small-diameter end portion of the inner race is formed with a small flange portion for limiting axial movement of the tapered rollers and a cylindrical portion which has a less diameter than the small flange portion and is connected to an axial outer end of the small flange portion. The cage is formed at a small-diameter end portion thereof with a bent portion which is bent inward in a radial direction. A small-diameter end portion of the cage has a bent portion which is faced to an outer surface of the cylindrical portion of the inner race with a predetermined clearance therefrom such that a labyrinth is created between the cage and the inner race.

    摘要翻译: 圆锥滚子轴承包括外圈,内圈,多个圆锥滚子和保持架。 内座圈的小直径端部形成有用于限制圆锥滚子的轴向运动的小凸缘部分和具有比小凸缘部分更小的直径的圆柱形部分,并且连接到小型凸缘部分的轴向外端 凸缘部分。 保持架在其小直径端部处形成有向径向内侧弯曲的弯曲部。 保持架的小直径端部具有弯曲部分,该弯曲部分与内座圈的圆柱形部分的外表面具有预定的间隙,使得在保持架和内圈之间产生迷宫。

    Method of avoiding wall particle contamination in depositing films
    43.
    发明授权
    Method of avoiding wall particle contamination in depositing films 失效
    避免沉积膜中的壁体污染的方法

    公开(公告)号:US06206012B1

    公开(公告)日:2001-03-27

    申请号:US09199049

    申请日:1998-11-24

    IPC分类号: C23C1600

    摘要: A method of avoiding deposition of particles from a film deposited on a wall of a film deposition apparatus, onto a film deposited in the apparatus, the method including directly heating a wall of a reaction chamber, before placing a wafer on a susceptor in the reaction chamber, to at least a wall film peeling temperature at which a wall film does not peel from the wall; placing a wafer in the reaction chamber, heating the wafer, and depositing a film on the wafer without directly heating the wall; ending heating of the wafer after deposition of the film and directly heating the reaction wall of the reaction chamber to at least the wall film peeling temperature; and removing the wafer from the reaction while the wall of the reaction chamber is maintained at a temperature at least equal to the wall film peeling temperature.

    摘要翻译: 一种避免颗粒从沉积在成膜装置的壁上的膜沉积到沉积在该装置中的膜上的方法,该方法包括直接加热反应室的壁,然后将晶片放置在反应器的基座上 至少壁膜剥离温度至少不会从墙壁剥离; 将晶片放置在反应室中,加热晶片,并将膜沉积在晶片上而不直接加热壁; 在膜沉积后结束加热晶片,并直接将反应室的反应壁加热到至少壁膜剥离温度; 并且当反应室的壁保持在至少等于壁膜剥离温度的温度时,将晶片从反应中移出。

    Semiconductor device
    44.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号:US5768303A

    公开(公告)日:1998-06-16

    申请号:US796738

    申请日:1997-02-06

    摘要: A semiconductor device includes a first conductivity type cladding layer; a second conductivity type cladding layer; an active layer of a semiconductor sandwiched between the first conductivity type cladding layer and the second conductivity type cladding layer; and a second conductivity type superlattice barrier layer sandwiched between the active layer and the second conductivity type cladding layer and having a superlattice structure including a first compound semiconductor having a larger energy band gap than the active layer and a second compound semiconductor having a smaller energy difference in the conduction band than the first compound semiconductor and a larger energy difference in the valence band than the first compound semiconductor, the first and second conductivity type compound semiconductors being alternatingly laminated in at least one pair of layers. The energy barrier provided between the active layer and the second conductivity type cladding layer has a sufficient height to prevent overflow of carriers and to improve LD characteristics, particularly operation at a high temperature.

    摘要翻译: 半导体器件包括第一导电型包覆层; 第二导电型包层; 夹在第一导电型包层和第二导电型包层之间的半导体的有源层; 以及夹在所述有源层和所述第二导电型包层之间的第二导电型超晶格阻挡层,并且具有包含具有比所述有源层大的能带隙的第一化合物半导体的超晶格结构和具有较小能量差的第二化合物半导体 在比第一化合物半导体的导带和导电带中的能量差比第一化合物半导体更大的能量差的情况下,第一和第二导电型化合物半导体交替层压在至少一对层中。 提供在有源层和第二导电类型包层之间的能量势垒具有足够的高度以防止载流子溢出并改善LD特性,特别是在高温下的操作。

    Semiconductor laser including ridge structure extending between window
regions
    45.
    发明授权
    Semiconductor laser including ridge structure extending between window regions 失效
    半导体激光器包括在窗口区域之间延伸的脊结构

    公开(公告)号:US5737351A

    公开(公告)日:1998-04-07

    申请号:US660179

    申请日:1996-06-03

    申请人: Kenichi Ono

    发明人: Kenichi Ono

    摘要: A method of fabricating a semiconductor laser includes successively growing a lower cladding layer of a first conductivity type, an active layer having a superlattice structure, a first upper cladding layer of a second conductivity type, an etch stopping layer of the second conductivity type, and a second upper cladding layer of the second conductivity type on a semiconductor substrate of the first conductivity type; diffusing a dopant impurity into parallel stripe-shaped regions of the active layer to disorder the superlattice structure of the active layer in these regions; etching the second upper cladding layer to expose the etch stopping layer without exposing the etch stopping layer on the disordered regions, thereby producing a stripe-shaped ridge structure extending perpendicular to the disordered regions; and growing a current blocking layer on the etch stopping layer and on the disordered regions, contacting both sides of the ridge structure. Since an etchant used for patterning does not contact the etch stopping layer on the disordered regions of the active layer, unwanted penetration of the etch stopping layer is avoided.

    摘要翻译: 制造半导体激光器的方法包括连续生长第一导电类型的下包层,具有超晶格结构的有源层,第二导电类型的第一上覆层,第二导电类型的蚀刻停止层,以及 在第一导电类型的半导体衬底上的第二导电类型的第二上包层; 将掺杂剂杂质扩散到活性层的平行条形区域,以扰乱这些区域中的有源层的超晶格结构; 蚀刻第二上包层以暴露蚀刻停止层,而不在无序区域上暴露蚀刻停止层,从而产生垂直于无序区域延伸的条状脊结构; 并且在蚀刻停止层和无序区域上生长电流阻挡层,接触脊结构的两侧。 由于用于图案化的蚀刻剂不与有源层的无序区域上的蚀刻停止层接触,所以避免了蚀刻停止层的不期望的穿透。

    Semiconductor device, semiconductor laser, and high electron mobility
transistor
    46.
    发明授权
    Semiconductor device, semiconductor laser, and high electron mobility transistor 失效
    半导体器件,半导体激光器和高电子迁移率晶体管

    公开(公告)号:US5734670A

    公开(公告)日:1998-03-31

    申请号:US632149

    申请日:1996-04-15

    摘要: A semiconductor device includes a semiconductor substrate having a surface; and a strained superlattice structure including first semiconductor layers having a first strain in a direction with respect to the semiconductor substrate and second semiconductor layers having a second strain in the same direction as and different in magnitude from the first strain, the first semiconductor layers and the second semiconductor layers being alternatingly laminated. The difference in strains between the first semiconductor layers and the second semiconductor layers is reduced, so that the crystalline quality of the strained superlattice structure is improved.

    摘要翻译: 半导体器件包括具有表面的半导体衬底; 以及应变超晶格结构,其包括在相对于半导体衬底的方向上具有第一应变的第一半导体层和具有与第一应变相同方向并且与第一应变不同的第二应变的第二半导体层,第一半导体层和 交替层叠第二半导体层。 第一半导体层和第二半导体层之间的应变差减小,从而提高了应变超晶格结构的结晶质量。

    Thermal air-flow sensor
    47.
    发明授权
    Thermal air-flow sensor 失效
    热气流传感器

    公开(公告)号:US5186045A

    公开(公告)日:1993-02-16

    申请号:US656802

    申请日:1991-02-15

    摘要: A thermal type air flow sensor wherein a heat generating element is arranged in an intake system, and a time for obtaining an increase in a temperature of a predetermined value is detected, which time corresponds to an amount of the intake air. The values of the intake air amount are averaged through one full cycle. This time is measured repeatedly at predetermined intervals during one full cycle of the pulsation, and a variation rate is calculated for values of the intake air amount obtained at two consecutive timings by a ratio of the difference of these values from the sum of these values. The average values of the intake air amount is corrected in accordance with this variation rate, to thus obtain a precise intake air amount.

    摘要翻译: 一种热式空气流量传感器,其中发热元件布置在进气系统中,并且检测到用于获得预定值的温度升高的时间,该时间对应于进气量。 进气量的值通过一个整周期平均。 在脉动的一个完整周期期间以预定间隔重复测量该时间,并且通过这些值的差与这些值的和的比率,计算在两个连续定时获得的进气量的值的变化率。 根据该变化率来校正进气量的平均值,从而获得精确的进气量。

    Tube pump and tube fixing member
    50.
    发明授权

    公开(公告)号:US09982667B2

    公开(公告)日:2018-05-29

    申请号:US13472593

    申请日:2012-05-16

    IPC分类号: F04B43/12

    摘要: A tube pump comprises a rotor configured to have a roller and to hold the roller to be able to make an orbital motion along the inner circumferential surface of the cap. The rotor includes a disk part which holds the roller on a base side, and a tube press member that engages with the disk part so that the tube does not move to the base side with respect to the disk part, seals a gap formed with respect to the inner circumferential surface of the cap, and is capable of rotating along an outer circumferential part of the disk part is provided at the outer circumferential part of the disk part.