公开(公告)号：US20070226987A1

公开(公告)日：2007-10-04

申请号：US11452948

申请日：2006-06-15

申请人： Hiroshi Endo ,  Yasuhiro Wakabayashi ,  Shin Eguchi ,  Tamotsu Yamamoto ,  Ei Yano

发明人： Hiroshi Endo ,  Yasuhiro Wakabayashi ,  Shin Eguchi ,  Tamotsu Yamamoto ,  Ei Yano

IPC分类号： G11B5/127

CPC分类号： G11B5/3169 ,  G11B5/3163 ,  G11B5/3903 ,  Y10T29/49021 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49048

摘要： The method for fabricating the magnetic head comprises the step of forming over a lower electrode a magnetoresistive effect film 16 with a polishing resistant film 20 formed over the upper surface, the step of forming a magnetic domain control film 24 over the entire surface of the lower electrode 12 including a region where the magnetoresistive effect film 16 has been formed, the step of selectively removing the magnetic domain control film 24 over the magnetoresistive effect film 16 by polishing with the polishing resistant film 20 as the stopper, the step of removing the polishing resistant film 20, and the step of forming an upper electrode 34 over the magnetoresistive effect film 16, from which the polishing resistant film 20 has been removed.

公开(公告)号：US07235866B2

公开(公告)日：2007-06-26

申请号：US11205128

申请日：2005-08-17

申请人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

发明人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

IPC分类号： H01L23/58 ,  H01L23/48

CPC分类号： C09D183/04 ,  C09D183/16 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76837 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/31663 ,  C08L83/00 ,  H01L2924/00

摘要： A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided which is suitable for inter-level insulating film material. A semiconductor device is also provided which has a low dielectric constant film and high reliability.

摘要翻译： 低介电膜形成材料含有溶解在溶剂中的硅氧烷树脂和聚碳硅烷。 通过使用该溶液，形成含有与硅氧烷树脂结合的硅氧烷树脂和聚碳硅烷的低电介质膜。 提供了适用于层间绝缘膜材料的低介电膜材料。 还提供了具有低介电常数膜和高可靠性的半导体器件。

公开(公告)号：US07202679B2

公开(公告)日：2007-04-10

申请号：US11327497

申请日：2006-01-09

申请人： Shigeyuki Maruyama ,  Susumu Kida ,  Naoyuki Watanabe ,  Takafumi Hashitani ,  Ei Yano ,  Ichiro Midorikawa

发明人： Shigeyuki Maruyama ,  Susumu Kida ,  Naoyuki Watanabe ,  Takafumi Hashitani ,  Ei Yano ,  Ichiro Midorikawa

IPC分类号： G01R31/02

CPC分类号： G01R1/06733 ,  G01R1/0483 ,  G01R1/06711 ,  G01R1/06755 ,  G01R1/07314 ,  H01L23/49827 ,  H01L2924/0002 ,  H01L2924/00

摘要： A contactor is provided which contactor comprises an insulating substrate, a concave portion formed in the insulating substrate and extending in a perpendicular direction from a surface thereof, and elastic conductive particles disposed in the concave portion. A part of one of the conductive particles protrudes from the surface of the insulating substrate.

摘要翻译： 提供一种接触器，该接触器包括绝缘基板，形成在绝缘基板中并从其表面沿垂直方向延伸的凹部，以及设置在凹部中的弹性导电颗粒。 一部分导电粒子从绝缘基片的表面突出。

公开(公告)号：US07170177B2

公开(公告)日：2007-01-30

申请号：US11115407

申请日：2005-04-27

申请人： Yoshihiro Nakata ,  Katsumi Suzuki ,  Iwao Sugiura ,  Ei Yano

发明人： Yoshihiro Nakata ,  Katsumi Suzuki ,  Iwao Sugiura ,  Ei Yano

IPC分类号： H01L23/48

CPC分类号： H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2221/1036 ,  H01L2924/0002 ,  H01L2924/00

摘要： A disclosed semiconductor apparatus includes a substrate, a first insulating layer formed on the substrate, the first insulating layer including a Cu wiring part, and a second insulating layer formed on the substrate, the second insulating layer including a Cu via plug part electrically connected to the Cu wiring part. The first insulating layer is a porous insulating film having an elastic modulus of 5 GPa or more and a hardness of 0.6 GPa or more, and the second insulating layer has an elastic modulus of no less than 10 GPa and a hardness no less than 1 GPa.

摘要翻译： 所公开的半导体装置包括基板，形成在基板上的第一绝缘层，包括Cu布线部分的第一绝缘层和形成在基板上的第二绝缘层，第二绝缘层包括Cu经由插塞部分，电连接到 Cu接线部分。 第一绝缘层是具有5GPa以上的弹性模量和0.6GPa以上的硬度的多孔绝缘膜，第二绝缘层的弹性模量不小于10GPa，硬度不小于1GPa 。

公开(公告)号：US20060022357A1

公开(公告)日：2006-02-02

申请号：US11205128

申请日：2005-08-17

申请人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

发明人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

IPC分类号： H01L23/29 ,  H01L21/31

CPC分类号： C09D183/04 ,  C09D183/16 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76837 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/31663 ,  C08L83/00 ,  H01L2924/00

摘要： A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided which is suitable for inter-level insulating film material. A semiconductor device is also provided which has a low dielectric constant film and high reliability.

公开(公告)号：US06727515B2

公开(公告)日：2004-04-27

申请号：US10102723

申请日：2002-03-22

申请人： Yoshihiro Nakata ,  Katsumi Suzuki ,  Iwao Sugiura ,  Ei Yano

发明人： Yoshihiro Nakata ,  Katsumi Suzuki ,  Iwao Sugiura ,  Ei Yano

IPC分类号： H01L3524

CPC分类号： H01L21/02126 ,  C09D183/14 ,  C09D183/16 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/76807 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： Porous insulation films 28, 40, 50 are formed of an insulation forming material including a silicon compound having a skeleton containing C—C bonds, a pore forming compound which is decomposed or evaporated by a heat treatment, and a solvent which dissolves the silicon compound with the pore forming compound, whereby the porous insulation film can have good mechanical strength and low dielectric constant.

摘要翻译： 多孔绝缘膜28,40,50由包含具有含有CC键的骨架的硅化合物，通过热处理分解或蒸发的成孔化合物的绝缘形成材料和溶解硅化合物的溶剂形成， 多孔绝缘膜可以具有良好的机械强度和低介电常数。

公开(公告)号：US06613834B2

公开(公告)日：2003-09-02

申请号：US09797865

申请日：2001-03-05

申请人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

发明人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

IPC分类号： C08L8304

CPC分类号： C09D183/04 ,  C09D183/16 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76837 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/31663 ,  C08L83/00 ,  H01L2924/00

摘要： A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided which is suitable for inter-level insulating film material. A semiconductor device is also provided which has a low dielectric constant film and high reliability.

公开(公告)号：US5482174A

公开(公告)日：1996-01-09

申请号：US253559

申请日：1994-06-03

申请人： Takahisa Namiki ,  Yasuo Yamagishi ,  Ei Yano

发明人： Takahisa Namiki ,  Yasuo Yamagishi ,  Ei Yano

IPC分类号： C23G1/10 ,  C23G5/032 ,  H01L21/304 ,  H05K3/06 ,  H05K3/22 ,  H05K3/24 ,  H05K3/26 ,  B44C1/22 ,  C23F1/00

CPC分类号： H05K3/22 ,  C23G1/103 ,  H05K2203/0315 ,  H05K2203/0789 ,  H05K2203/1157 ,  H05K3/061

摘要： A method for removing copper oxide on a surface of a copper film is comprising the steps of treating the surface of the copper film with acid, neutralizing the surface of the copper film treated with acid, and washing the neutralized surface of the copper film.

摘要翻译： 一种在铜膜表面除去氧化铜的方法包括以下步骤：用酸处理铜膜表面，中和用酸处理的铜膜的表面，并洗涤铜膜的中和表面。

公开(公告)号：US08207059B2

公开(公告)日：2012-06-26

申请号：US12185367

申请日：2008-08-04

申请人： Shirou Ozaki ,  Yoshihiro Nakata ,  Ei Yano

发明人： Shirou Ozaki ,  Yoshihiro Nakata ,  Ei Yano

IPC分类号： H01L21/4763 ,  H01L21/31

CPC分类号： C08G77/62 ,  C08G77/60 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/3121 ,  H01L21/3125 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835

摘要： A layer of a porous insulating film precursor is formed on or over a substrate, a layer of a specific silicon compound is then formed, this silicon compound layer is pre-cured as necessary, and the porous insulating film precursor is exposed to UV through the silicon compound layer or pre-cured layer.

摘要翻译： 在基板上或上方形成多孔绝缘膜前体层，然后形成特定硅化合物层，根据需要对该硅化合物层进行预固化，多孔绝缘膜前体通过 硅化合物层或预固化层。

公开(公告)号：US07830013B2

公开(公告)日：2010-11-09

申请号：US11395263

申请日：2006-04-03

申请人： Junichi Kon ,  Ei Yano ,  Yoshihiro Nakata ,  Tadahiro Imada

发明人： Junichi Kon ,  Ei Yano ,  Yoshihiro Nakata ,  Tadahiro Imada

IPC分类号： H01L23/12 ,  H01L23/48 ,  H01L21/4763 ,  H01L51/40

CPC分类号： C09D183/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/3122 ,  H01L21/76807

摘要： The present invention aims at providing: a material for forming an adhesion reinforcing layer which can reinforce the adhesion between a low dielectric constant film, especially a low dielectric constant film containing an inorganic material, and other members; an adhesion reinforcing layer formed by the said material and exhibits superior adhesion; a fast and highly reliable semiconductor device having the adhesion reinforcing layer; and a manufacturing method thereof. The material for forming an adhesion reinforcing layer contains at least any one of organoalkoxysilane having a basic functional group, a basic additive and organoalkoxysilane. The adhesion reinforcing layer is formed by the said material. The manufacturing method of a semiconductor device includes a process for forming a low dielectric constant film and, at least before or after the process for forming a low dielectric constant film, a process for forming an adhesion reinforcing layer with the said material.

摘要翻译： 本发明的目的在于提供：一种用于形成粘合增强层的材料，其可以增强低介电常数膜，特别是含有无机材料的低介电常数膜和其它构件之间的粘附性; 由所述材料形成的附着增强层，具有优异的附着力; 具有粘合增强层的快速且高可靠性的半导体器件; 及其制造方法。 用于形成粘合增强层的材料含有至少一种具有碱性官能团的有机烷氧基硅烷，碱性添加剂和有机烷氧基硅烷。 粘合增强层由所述材料形成。 半导体器件的制造方法包括形成低介电常数膜的方法，并且至少在形成低介电常数膜的工艺之前或之后，与所述材料形成粘合增强层的工艺。