公开(公告)号：US4660983A

公开(公告)日：1987-04-28

申请号：US777247

申请日：1985-09-18

申请人： Osamu Yamamoto ,  Haruhisa Takiguchi ,  Sadayoshi Matsui

发明人： Osamu Yamamoto ,  Haruhisa Takiguchi ,  Sadayoshi Matsui

IPC分类号： H01L21/66 ,  H01S5/00 ,  H01S5/028 ,  G01N21/47

CPC分类号： H01S5/14 ,  G01N21/55 ,  H01S3/106 ,  H01S5/0014 ,  H01S5/028 ,  H01S5/0283 ,  H01S5/0683

摘要： An apparatus for measuring the reflectivities of the resonator facets of a semiconductor laser when the facets are covered with a protective coating of dielectric material or the like, which comprises photodetector means for individually measuring the laser light powers from both facets of the resonator, reflector means for reflecting the laser light from one of the facets back to the laser, shutter means openable or closable at a position to block the laser light reflected from the reflector means, and photodetector means for measuring the power of the reflected laser light.

摘要翻译： 一种用于测量半导体激光器的谐振器面的反射率的装置，其中所述小面被介电材料等的保护涂层覆盖，所述保护涂层包括光电检测器装置，用于分别测量来自谐振器的两个面的激光功率，反射器装置 用于将激光从其中一个面反射回激光器，快门装置在阻挡从反射器装置反射的激光的位置处可开启或关闭;以及光电检测器装置，用于测量反射的激光的功率。

公开(公告)号：US4140695A

公开(公告)日：1979-02-20

申请号：US860893

申请日：1977-12-15

申请人： Seiji Takeuchi ,  Sadayoshi Matsui

发明人： Seiji Takeuchi ,  Sadayoshi Matsui

IPC分类号： C09B47/06 ,  C09B47/04

CPC分类号： C09B47/06

摘要： Copper phthalocyanines are produced by reacting a phthalic anhydride or phthalimide with a copper compound and urea in the presence of a catalyst in a polyalkyl-monochlorobenzene having at least two lower alkyl groups and having the formula ##STR1## wherein R.sub.1 and R.sub.2 respectively represent a lower alkyl group having 1 to 3 carbon atoms; R.sub.3 and R.sub.4 respectively represent hydrogen atom or a lower alkyl group having 1 to 3 carbon atoms.

摘要翻译： 铜酞菁是通过使邻苯二甲酸酐或邻苯二甲酰亚胺与铜化合物和脲在催化剂存在下在具有至少两个低级烷基并具有下式的聚烷基一氯苯中反应制备的：其中R1和R2分别表示低级 具有1至3个碳原子的烷基; R3和R4分别表示氢原子或碳原子数1〜3的低级烷基。

公开(公告)号：US5789773A

公开(公告)日：1998-08-04

申请号：US724215

申请日：1996-10-01

申请人： Tadashi Takeoka ,  Sadayoshi Matsui

发明人： Tadashi Takeoka ,  Sadayoshi Matsui

IPC分类号： H01L21/203 ,  H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01S5/00 ,  H01S5/30 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

CPC分类号： H01L33/30 ,  B82Y20/00 ,  H01L33/305 ,  H01S5/32325 ,  H01S5/305 ,  H01S5/34326

摘要： In an AlGaInP type semiconductor light-emitting device, an n-type AlGaInP cladding layer and a p-type AlGaInP cladding layer are deposited so as to interpose an active layer made of GaInP or AlGaInP therebetween. Light guiding layers are provided between the active layer and the n-type cladding layer, and/or, between the active layer and the p-type cladding layer, respectively. The p-type cladding layer is doped with Be serving as a p-type dopant. The active layer, the p-type cladding layer and the light guiding layers are doped with Si which may serve as an n-type dopant.

摘要翻译： 在AlGaInP型半导体发光器件中，沉积n型AlGaInP包层和p型AlGaInP包覆层，以在其间插入由GaInP或AlGaInP制成的有源层。 导光层分别设置在有源层和n型覆层之间，和/或分别在有源层和p型覆层之间。 p型覆层掺杂有作为p型掺杂剂的Be。 有源层，p型覆层和导光层掺杂有可用作n型掺杂剂的Si。

公开(公告)号：US4745616A

公开(公告)日：1988-05-17

申请号：US830864

申请日：1986-02-19

申请人： Shinji Kaneiwa ,  Haruhisa Takiguchi ,  Toshihiko Yoshida ,  Sadayoshi Matsui

发明人： Shinji Kaneiwa ,  Haruhisa Takiguchi ,  Toshihiko Yoshida ,  Sadayoshi Matsui

IPC分类号： H01S5/00 ,  H01S5/12 ,  H01S3/19

CPC分类号： H01S5/12

摘要： A semiconductor laser device comprising a GaAlAs first cladding layer, a Ga.sub.1-x Al.sub.x As (0.ltoreq.x.ltoreq.0.4) active layer for laser oscillation, an In.sub.1-y Ga.sub.y P.sub.1-z As.sub.z (z=2.04y-1.04, and 0.ltoreq.z.ltoreq.1) optical guiding layer with a diffraction grating thereon, a GaAlAs buffer layer disposed between said active layer and said optical guiding layer, and a GaAlAs second cladding layer, the width of the forbidden band of said buffer layer being greater than that of the active layer and smaller than that of the optical guiding layer.

摘要翻译： 包括GaAlAs第一包层，用于激光振荡的Ga1-xAlxAs（0≤x≤0.4）有源层，In1-yGayP1-zAsz（z = 2.04y-1.04和0）的半导体激光器件， = z 1）具有衍射光栅的光导层，设置在所述有源层和所述光导层之间的GaAlAs缓冲层和GaAlAs第二包层，所述缓冲层的禁带的宽度更大 比活性层的厚度小，而且比光导层的面积小。

公开(公告)号：US4745615A

公开(公告)日：1988-05-17

申请号：US789787

申请日：1985-10-21

申请人： Shinji Kaneiwa ,  Haruhisa Takiguchi ,  Toshihiko Yoshida ,  Sadayoshi Matsui

发明人： Shinji Kaneiwa ,  Haruhisa Takiguchi ,  Toshihiko Yoshida ,  Sadayoshi Matsui

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/12 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/32308 ,  H01S5/12 ,  H01S5/3211

摘要： A semiconductor laser device for laser oscillation at a wavelength in the range of from 660 nm to 890 nm which includes an active layer of Ga.sub.1-x Al.sub.x As (0.ltoreq.x.ltoreq.0.4) or In.sub.1-y Ga.sub.y P.sub.1-z As.sub.z (0.51.ltoreq.y.ltoreq.1, 0.ltoreq.z.ltoreq.1, and z=2.04y-1.04) and a layer with a diffraction grating thereon of In.sub.1-y Ga.sub.y P.sub.1-z As (z=2.04y-1.04) which is adjacent to the active layer.

摘要翻译： 用于在660nm至890nm范围内的波长的激光振荡的半导体激光器件，其包括Ga1-xAlxAs（0≤x≤0.4）或In1-yGayP1-zAsz有效层（0.51 < = y 1 = 0,0 / z = 1，z = 2.04y-1.04）和其上具有In1-yGayP1-zAs（z = 2.04y-1.04）的衍射光栅的层，其相邻 到活动层。

公开(公告)号：US4057555A

公开(公告)日：1977-11-08

申请号：US677256

申请日：1976-04-15

申请人： Wataro Koike ,  Takahiro Kimoto ,  Sadayoshi Matsui

发明人： Wataro Koike ,  Takahiro Kimoto ,  Sadayoshi Matsui

IPC分类号： C07D275/06 ,  C07D327/04

CPC分类号： C07D275/06 ,  C07D327/04

摘要： 1,2-Benzoisothiazole-3-on-1, 1-dioxide having the formula ##STR1## wherein X represents hydrogen, halogen, nitro, lower alkyl or lower alkoxy and Y represents hydrogen, halogen, lower alkyl, or lower alkoxy is prepared by reacting phosgene with an o-sulfobenzoic acid compound having the formula: ##STR2## or an alkali metal salt or alkaline earth metal salt thereof in the presence of dimethylformamide, thereby producing a mixture of a dichlorotolylsultone and a chlorosulfonylbenzoylchloride; (b) reacting the reaction products of step (a) with an alcohol of the formula ROH wherein R represents a lower alkyl group; and then (c) reacting the product of step (b) with ammonia.

摘要翻译： 其中X表示氢，卤素，硝基，低级烷基或低级烷氧基，Y表示氢，卤素，低级烷基或低级烷氧基的1,2-苯并异噻唑-3-基-1,2-二氧化物 通过在二甲基甲酰胺存在下使光气与具有下式的邻磺基苯甲酸化合物或其碱金属盐或碱土金属盐反应，由此制备二氯二磺酰基内酯与氯磺酰苯甲酰氯的混合物; （b）使步骤（a）的反应产物与式ROH的醇反应，其中R表示低级烷基; 然后（c）使步骤（b）的产物与氨反应。

公开(公告)号：US5255279A

公开(公告)日：1993-10-19

申请号：US698001

申请日：1991-05-09

申请人： Kosei Takahashi ,  Masahiro Hosoda ,  Atsuo Tsunoda ,  Takahiro Suyama ,  Sadayoshi Matsui

发明人： Kosei Takahashi ,  Masahiro Hosoda ,  Atsuo Tsunoda ,  Takahiro Suyama ,  Sadayoshi Matsui

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L31/105 ,  H01L31/18 ,  H01L33/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/32325 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02631 ,  H01L21/02658 ,  H01L31/105 ,  H01L31/1844 ,  H01L33/0062 ,  H01S5/2231 ,  H01S2304/02 ,  H01S5/0421 ,  H01S5/209 ,  H01S5/3211 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S148/095

摘要： On a GaAs substrate (Al.sub.Y Ga.sub.1-Y).sub.0.5 In.sub.0.5 P crystal layers (0.ltoreq.Y.ltoreq.1) is formed to be lattice-matched with the substrate. By radiating As molecular beams on the surface of the crystal layers while heating the layered substrate to a temperature at which In in the crystal layers evaporates, the portion near the surface of the crystal layers is changed into an Al.sub.Y Ga.sub.1-Y As crystal layer (0.ltoreq.Y.ltoreq.1) of a thickness of several molecules, on which layer an Al.sub.X Ga.sub.1-X As crystal layer (0.ltoreq.X.ltoreq.1) is formed. Since the surface of the Al.sub.Y Ga.sub.1-Y As crystal layer has been purified, the formed Al.sub.X Ga.sub.1-X As crystal layer has a high crystallinity, allowing production of a light emitting diode, a semiconductor laser device and the like with high efficiency.

公开(公告)号：US4997747A

公开(公告)日：1991-03-05

申请号：US253811

申请日：1988-10-05

申请人： Toshihiko Yoshida ,  Haruhisa Takiguchi ,  Shinji Kaneiwa ,  Sadayoshi Matsui

发明人： Toshihiko Yoshida ,  Haruhisa Takiguchi ,  Shinji Kaneiwa ,  Sadayoshi Matsui

IPC分类号： G02B5/18 ,  G02B5/32 ,  G02B6/124 ,  H01S5/00 ,  H01S5/12

CPC分类号： H01S5/12 ,  G02B5/1857 ,  G02B5/32 ,  G02B6/124 ,  H01S5/124 ,  Y10S359/90

摘要： A method for the formation of a diffraction grating on a substrate using a holographic technique and an etching technique, wherein the periodicity of the pattern of the diffraction grating can be changed at will by a change of the light-path length of one of the two light fluxes from a holographic exposing system.

公开(公告)号：US4908831A

公开(公告)日：1990-03-13

申请号：US314363

申请日：1989-02-22

申请人： Toshihiko Yoshida ,  Haruhisa Takiguchi ,  Shinji Kaneiwa ,  Hiroaki Kudo ,  Sadayoshi Matsui

发明人： Toshihiko Yoshida ,  Haruhisa Takiguchi ,  Shinji Kaneiwa ,  Hiroaki Kudo ,  Sadayoshi Matsui

IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S5/227 ,  H01S5/24

CPC分类号： H01S5/24 ,  H01S5/227 ,  H01S5/0035 ,  H01S5/2235 ,  H01S5/2237 ,  H01S5/2275

摘要： A buried type semiconductor laser device comprising a multi-layered epitaxial growth crystal including a striped laser-oscillation operating area on a semiconductor substrate, wherein said laser-oscillation operating area contains a buffer layer having the same polarity as said substrate, an active layer and a cladding layer having a polarity different from that of said substrate, said laser-oscillation operation area being sandwiched between one part of the burying layer and another part of the burying layer, which are disposed on said substrate and which have a polarity different from that of said substrate, through said substrate or a diffusion region having an impurity with the same polarity as said substrate so as to electrically isolate said burying layer from said cladding layer, thereby maintaining ineffective current flowing from said cladding layer to said burying layer at a low level even when current injected into said device is increased.

公开(公告)号：US4842679A

公开(公告)日：1989-06-27

申请号：US27735

申请日：1987-03-19

申请人： Hiroaki Kudo ,  Sadayoshi Matsui

发明人： Hiroaki Kudo ,  Sadayoshi Matsui

IPC分类号： H01L21/205 ,  H01J37/30 ,  H01L21/263 ,  H01L21/302

CPC分类号： H01J37/3002 ,  H01L21/2636

摘要： A method for the production of semiconductor devices comprising introducing source gases, etching gases or source molecules into a substrate to grow crystalline layers on said substrate or to etch said substrate, resulting in a semiconductor device, wherein said method further comprises applying a given electric potential to said substrate; applying an electric potential that is different from that of said substrate to an electron-beam irradiator disposed directly above said substrate; and irradiating said irradiator with electron beams from an electron-beam emitting means, whereby said substrate is irradiated with the secondary electron beams generated from said irradiator and/or with the electron beams transmitted through said irradiator.

摘要翻译： 一种用于生产半导体器件的方法，包括将源气体，蚀刻气体或源分子引入衬底中以在所述衬底上生长结晶层或蚀刻所述衬底，从而产生半导体器件，其中所述方法还包括施加给定电位 到所述基板; 将不同于所述衬底的电位施加到直接位于所述衬底上方的电子束照射器; 并用来自电子束发射装置的电子束照射所述辐射器，由此所述衬底被从所述辐射器产生的二次电子束和/或通过所述辐照器传输的电子束照射。