公开(公告)号：US11978786B2

公开(公告)日：2024-05-07

申请号：US17495588

申请日：2021-10-06

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Isao Obu ,  Yasunari Umemoto ,  Masahiro Shibata ,  Shigeki Koya ,  Masao Kondo ,  Takayuki Tsutsui

IPC: H01L29/737 ,  H01L21/02 ,  H01L21/285 ,  H01L21/306 ,  H01L21/308 ,  H01L21/311 ,  H01L23/00 ,  H01L27/102 ,  H01L29/08 ,  H01L29/10 ,  H01L29/205 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66 ,  H01L29/735 ,  H03F1/30 ,  H03F1/56 ,  H03F3/195 ,  H03F3/21 ,  H03F3/213 ,  H03F3/24

CPC classification number: H01L29/7371 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/28575 ,  H01L21/30612 ,  H01L21/308 ,  H01L21/31111 ,  H01L24/00 ,  H01L29/0813 ,  H01L29/0817 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/205 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/66318 ,  H03F1/56 ,  H03F3/195 ,  H03F3/211 ,  H03F3/213 ,  H03F3/245 ,  H01L29/452 ,  H03F1/302 ,  H03F2200/222 ,  H03F2200/267 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/451

Abstract: A bipolar transistor includes a collector layer, a base layer, and an emitter layer that are formed in this order on a compound semiconductor substrate. The emitter layer is disposed inside an edge of the base layer in plan view. A base electrode is disposed on partial regions of the emitter layer and the base layer so as to extend from an inside of the emitter layer to an outside of the base layer in plan view. An insulating film is disposed between the base electrode and a portion of the base layer, with the portion not overlapping the emitter layer. An alloy layer extends from the base electrode through the emitter layer in a thickness direction and reaches the base layer. The alloy layer contains at least one element constituting the base electrode and elements constituting the emitter layer and the base layer.

公开(公告)号：US11705875B2

公开(公告)日：2023-07-18

申请号：US17453962

申请日：2021-11-08

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Shigeki Koya ,  Yasunari Umemoto ,  Yuichi Saito ,  Isao Obu ,  Takayuki Tsutsui

IPC: H03F3/21 ,  H03F1/02 ,  H01F17/00 ,  H01L23/498 ,  H01L23/552 ,  H01L23/66 ,  H01L23/00 ,  H03F3/213

CPC classification number: H03F3/211 ,  H01F17/0013 ,  H01L23/49822 ,  H01L23/552 ,  H01L23/66 ,  H01L24/16 ,  H03F1/0205 ,  H03F3/213 ,  H01F2017/008 ,  H01L24/13 ,  H01L2223/6644 ,  H01L2224/13025 ,  H01L2224/16225 ,  H01L2924/3025 ,  H03F2200/114 ,  H03F2200/273 ,  H03F2200/451 ,  H03F2200/534 ,  H03F2200/541 ,  H03F2203/21106 ,  H03F2203/21142

Abstract: A power amplifier module includes a first substrate and a second substrate, at least part of the second substrate being disposed in a region overlapping the first substrate. The second substrate includes a first amplifier circuit and a second amplifier circuit. The first substrate includes a first transformer including a primary winding having a first end and a second end and a secondary winding having a first end and a second end; a second transformer including a primary winding having a first end and a second end and a secondary winding having a first end and a second end; and multiple first conductors disposed in a row between the first transformer and the second transformer, each of the multiple first conductors extending from the wiring layer on a first main surface to the wiring layer on a second main surface of the substrate.

公开(公告)号：US11557664B2

公开(公告)日：2023-01-17

申请号：US17355048

申请日：2021-06-22

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Isao Obu ,  Yasunari Umemoto ,  Takayuki Tsutsui ,  Satoshi Tanaka

IPC: H01L29/08 ,  H01L29/73 ,  H01L29/205 ,  H01L29/417 ,  H01L29/737 ,  H01L27/082

Abstract: A first sub-collector layer functions as an inflow path of a collector current that flows in a collector layer of a heterojunction bipolar transistor. A collector ballast resistor layer having a lower doping concentration than the first sub-collector layer is disposed between the collector layer and the first sub-collector layer.

公开(公告)号：US11309852B2

公开(公告)日：2022-04-19

申请号：US16995902

申请日：2020-08-18

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Isao Obu ,  Satoshi Tanaka ,  Takayuki Tsutsui ,  Yasunari Umemoto

IPC: H03F3/21 ,  H03F3/19 ,  H03F1/56 ,  H03F1/02 ,  H01L27/06 ,  H01L21/8252

Abstract: A power amplifier includes initial-stage and output-stage amplifier circuits, and initial-stage and output-stage bias circuits. The initial-stage amplifier circuit includes a first high electron mobility transistor having a source electrically connected to a reference potential, and a gate to which a radio-frequency input signal is inputted, and a first heterojunction bipolar transistor having an emitter electrically connected to a drain of the first high electron mobility transistor, a base electrically connected to the reference potential in an alternate-current fashion, and a collector to which direct-current power is supplied and from which a radio-frequency signal is outputted. The output-stage amplifier circuit includes a second heterojunction bipolar transistor having an emitter electrically connected to the reference potential, a base to which the radio-frequency signal outputted from the first heterojunction bipolar transistor is inputted, and a collector to which direct-current power is supplied and from which a radio-frequency output signal is outputted.

公开(公告)号：US11227804B2

公开(公告)日：2022-01-18

申请号：US16869275

申请日：2020-05-07

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yasunari Umemoto ,  Shigeki Koya ,  Isao Obu ,  Kaoru Ideno

IPC: H01L29/737 ,  H01L21/8252 ,  H01L29/66 ,  H01L29/15

Abstract: A collector layer, a base layer, an emitter layer, and an emitter mesa layer are placed above a substrate in this order. A base electrode and an emitter electrode are further placed above the substrate. The emitter mesa layer has a long shape in a first direction in plan view. The base electrode includes a base electrode pad portion spaced from the emitter mesa layer in the first direction. An emitter wiring line and a base wiring line are placed on the emitter electrode and the base electrode, respectively. The emitter wiring line is connected to the emitter electrode via an emitter contact hole. In the first direction, the spacing between the edges of the emitter mesa layer and the emitter contact hole on the side of the base wiring line is smaller than that between the emitter mesa layer and the base wiring line.

公开(公告)号：US11196394B2

公开(公告)日：2021-12-07

申请号：US16527578

申请日：2019-07-31

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Shigeki Koya ,  Yasunari Umemoto ,  Yuichi Saito ,  Isao Obu ,  Takayuki Tsutsui

IPC: H03F3/21 ,  H03F3/45 ,  H03F1/02 ,  H01L23/00 ,  H01F17/00 ,  H01L23/552 ,  H03F3/213 ,  H01L23/66 ,  H01L23/498

Abstract: A power amplifier module includes a first substrate and a second substrate, at least part of the second substrate being disposed in a region overlapping the first substrate. The second substrate includes a first amplifier circuit and a second amplifier circuit. The first substrate includes a first transformer including a primary winding having a first end and a second end and a secondary winding having a first end and a second end; a second transformer including a primary winding having a first end and a second end and a secondary winding having a first end and a second end; and multiple first conductors disposed in a row between the first transformer and the second transformer, each of the multiple first conductors extending from the wiring layer on a first main surface to the wiring layer on a second main surface of the substrate.

公开(公告)号：US11164963B2

公开(公告)日：2021-11-02

申请号：US16854262

申请日：2020-04-21

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Isao Obu ,  Yasunari Umemoto ,  Masahiro Shibata ,  Shigeki Koya ,  Masao Kondo ,  Takayuki Tsutsui

IPC: H01L29/737 ,  H03F3/21 ,  H03F1/56 ,  H03F3/24 ,  H01L29/08 ,  H01L23/00 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L21/306 ,  H01L21/02 ,  H01L21/311 ,  H01L21/308 ,  H01L29/66 ,  H03F3/213 ,  H03F3/195 ,  H01L29/205 ,  H01L29/45 ,  H03F1/30 ,  H01L27/102 ,  H01L21/285

Abstract: A bipolar transistor includes a collector layer, a base layer, and an emitter layer that are formed in this order on a compound semiconductor substrate. The emitter layer is disposed inside an edge of the base layer in plan view. A base electrode is disposed on partial regions of the emitter layer and the base layer so as to extend from an inside of the emitter layer to an outside of the base layer in plan view. An insulating film is disposed between the base electrode and a portion of the base layer, with the portion not overlapping the emitter layer. An alloy layer extends from the base electrode through the emitter layer in a thickness direction and reaches the base layer. The alloy layer contains at least one element constituting the base electrode and elements constituting the emitter layer and the base layer.

公开(公告)号：US11107909B2

公开(公告)日：2021-08-31

申请号：US16436674

申请日：2019-06-10

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yasunari Umemoto ,  Isao Obu ,  Kaoru Ideno ,  Shigeki Koya

IPC: H01L29/737 ,  H01L29/423 ,  H01L29/417 ,  H01L29/08 ,  H01L29/06

Abstract: A collector layer, a base layer, and an emitter layer that are disposed on a substrate form a bipolar transistor. An emitter electrode is in ohmic contact with the emitter layer. The emitter layer has a shape that is long in one direction in plan view. A difference in dimension with respect to a longitudinal direction of the emitter layer between the emitter layer and an ohmic contact interface at which the emitter layer and the emitter electrode are in ohmic contact with each other is larger than a difference in dimension with respect to a width direction of the emitter layer between the emitter layer and the ohmic contact interface.

公开(公告)号：US10855232B2

公开(公告)日：2020-12-01

申请号：US16190861

申请日：2018-11-14

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Shigeki Koya ,  Takayuki Tsutsui ,  Yasunari Umemoto ,  Isao Obu ,  Satoshi Tanaka

IPC: H03F1/32 ,  H03F3/21 ,  H03F3/19 ,  H03G3/00 ,  H03F1/56 ,  H03F1/02 ,  H03G3/30 ,  H03F3/24

Abstract: A power amplifier module includes a first amplifier circuit that amplifies a radio frequency signal with a first gain corresponding to a first control signal to generate a first amplified signal; a second amplifier circuit that amplifies the first amplified signal with a second gain corresponding to a second control signal to generate a second amplified signal; and a control unit that generates the first control signal and the second control signal. The second control signal is a control signal for increasing a power-supply voltage for the second amplifier circuit as a peak-to-average power ratio of the radio frequency signal increases. The first control signal is a control signal for controlling the first gain of the first amplifier circuit so that a variation in the second gain involved in a variation in the power-supply voltage for the second amplifier circuit is compensated for.

公开(公告)号：US10361666B2

公开(公告)日：2019-07-23

申请号：US15946552

申请日：2018-04-05

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Isao Obu ,  Yasunari Umemoto ,  Masahiro Shibata ,  Kenichi Nagura

IPC: H03F1/52 ,  H01L23/00 ,  H01L29/04 ,  H03F3/213 ,  H01L29/737 ,  H01L27/02 ,  H01L27/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/205 ,  H01L29/06 ,  H01L21/265 ,  H01L29/417 ,  H01L29/423 ,  H01L23/48 ,  H01L29/861 ,  H01L21/768 ,  H03F3/195 ,  H01L21/02 ,  H01L29/36 ,  H01L29/207 ,  H01L29/45 ,  H01L21/285 ,  H01L21/3213 ,  H01L21/027 ,  H01L29/66 ,  H01L21/306 ,  H01L21/311 ,  H03F1/56 ,  H01L23/31 ,  H01L23/29 ,  H01L23/538 ,  H01L25/16

Abstract: A circuit element is formed on a substrate made of a compound semiconductor. A bonding pad is disposed on the circuit element so as to at least partially overlap the circuit element. The bonding pad includes a first metal film and a second metal film formed on the first metal film. A metal material of the second metal film has a higher Young's modulus than a metal material of the first metal film.