Abstract:
Embodiments are described of a color filter array including a plurality of tiled minimal repeating units. Each minimal repeating unit includes an invisible-wavelength filter layer including a plurality of filters and a visible-wavelength filter layer positioned on the invisible-wavelength filter layer and having a plurality of filters such that each filter from the visible-wavelength layer is optically coupled to a corresponding filter in the invisible-wavelength layer.
Abstract:
A novel head mounted display includes a display/image sensor. In a particular embodiment the display/image sensor is formed on a single silicon die, which includes display pixels and light sensor pixels. The display pixels and light sensor pixels are each arranged in rows and columns, and the arrays of light sensor pixels and display pixels are interlaced. The center of each light sensor pixel is located between adjacent rows and adjacent columns of display pixels.
Abstract:
An image sensor includes a pixel array with a plurality of pixels arranged in a semiconductor layer. A color filter array including a plurality of groupings of filters is disposed over the pixel array. Each filter is optically coupled to a corresponding one of the plurality pixels. Each one of the plurality of groupings of filters includes a first, a second, a third, and a fourth filter having a first, a second, the second, and a third color, respectively. A metal layer is disposed over the pixel array and is patterned to include a metal mesh having mesh openings with a size and pitch to block incident light having a fourth color from reaching the corresponding pixel. The metal layer is patterned to include openings without the metal mesh to allow the incident light to reach the other pixels.
Abstract:
An image sensor includes a plurality of photosensitive devices arranged in a semiconductor substrate. A planar layer is disposed over the plurality of photosensitive devices in the semiconductor substrate. A plurality of first microlenses comprised of a lens material is arranged in first lens regions on the planar layer. A plurality of lens barriers comprised of the lens material is arranged on the planar layer to provide boundaries that define second lens regions on the planar layer. A plurality of second microlenses comprised of the lens material is formed within the boundaries provided by the plurality of lens barriers that define the second lens regions on the planar layer. The plurality of lens barriers are integrated with respective second microlenses after a reflow process of the plurality of second microlenses.
Abstract:
Embodiments of a process including depositing a sacrificial layer on the surface of a substrate over a photosensitive region, over the top surface of a transfer gate, and over at least the sidewall of the transfer gate closest to the photosensitive region, the sacrificial layer having a selected thickness. A layer of photoresist is deposited over the sacrificial layer, which is patterned and etched to expose the surface of the substrate over the photosensitive region and at least part of the transfer gate top surface, leaving a sacrificial spacer on the sidewall of the transfer gate closest to the photosensitive region. The substrate is plasma doped to form a pinning layer between the photosensitive region and the surface of the substrate. The spacing between the pinning layer and the sidewall of the transfer gate substantially corresponds to a thickness of the sacrificial spacer. Other embodiments are disclosed and claimed.
Abstract:
A color image sensor includes a pixel array including CFA overlaying an array of photo-sensors for acquiring color image data. The CFA includes first color filter elements of a first color overlaying a first group of the photo-sensors and second color filter elements of a second color overlaying a second group of the photo-sensors. The first group of photo-sensors generate first color signals of a first color channel and the second group of photo-sensors generate second color signals of a second color channel. The color image sensor further includes a color signal combiner circuit (“CSCC”) coupled to receive the first and second color signals output from the pixel array. The CSCC includes a combiner coupled to combine the first and second colors signals to generate third color signals of a third color channel. An output port is coupled to the CSCC to output the color image data.
Abstract:
An integrated circuit system includes a first device wafer bonded to a second device wafer at a bonding interface of dielectrics. Each wafer includes a plurality of dies, where each die includes a device, a metal stack, and a seal ring that is formed at an edge region of the die. Seal rings included in dies of the second device wafer each include a first conductive path provided with metal formed in a first opening that extends from a backside of the second device wafer, through the second device wafer, and through the bonding interface to the seal ring of a corresponding die in the first device wafer.
Abstract:
A backside illuminated imaging sensor with a seal ring support includes an epitaxial layer having an imaging array formed in a front side of the epitaxial layer. A metal stack is coupled to the front side of the epitaxial layer, wherein the metal stack includes a seal ring formed in an edge region of the imaging sensor. An opening is included that extends from the back side of the epitaxial layer to a metal pad of the seal ring to expose the metal pad. The seal ring support is disposed on the metal pad and within the opening to structurally support the seal ring.
Abstract:
A color image sensor includes a pixel array including a CFA overlaying an array of photo-sensors for acquiring a color image. The CFA includes first color filter elements of a first color overlaying a first group of the photo-sensors, second color filter elements of a second color overlaying a second group of the photo-sensors, and a plurality of filter stacks overlaying a third group of the photo-sensors. The first group generates first color signals of a first color channel and the second group generates second color signals of a second color channel. Each of the filter stacks includes a first stacked filter of the first color and a second stacked filter of the second color. A sensitivity of the filter stacks equals a product of sensitivities of the first and the second stacked filters and the filter stacks generate a third color channel.
Abstract:
A color image sensor includes a pixel array including CFA overlaying an array of photo-sensors for acquiring color image data. The CFA includes first color filter elements of a first color overlaying a first group of the photo-sensors and second color filter elements of a second color overlaying a second group of the photo-sensors. The first group of photo-sensors generate first color signals of a first color channel and the second group of photo-sensors generate second color signals of a second color channel. The color image sensor further includes a color signal combiner circuit (“CSCC”) coupled to receive the first and second color signals output from the pixel array. The CSCC includes a combiner coupled to combine the first and second colors signals to generate third color signals of a third color channel. An output port is coupled to the CSCC to output the color image data.