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41.发明授权Exposure method, aligner, and method of manufacturing semiconductor integrated circuit devices 失效半导体集成电路器件的曝光方法，对准器及其制造方法
公开(公告)号：US6020109A
公开(公告)日：2000-02-01
申请号：US257063
申请日：1999-02-25
CPC分类号： G03F9/70 , G03F1/26 , G03F1/30 , G03F1/60 , G03F7/70283 , G03F7/70466
摘要： To prevent positional shifts of the image forming plane during the exposure process using the two-layer phase shift mask, the height position of the semiconductor wafer 14 is moved in the optical axis direction according to the mask substrate thickness of the second component mask 12b, prior to performing the exposure process which uses the stacked-layer mask 12 that comprises a first component mask 12a formed with a pattern of light-shielding areas and light-transmitting areas and a second component mask 12b formed with a phase shift pattern to produce a phase shift in the transmitted light.
摘要翻译： 为了防止在使用两层相移掩模的曝光处理期间图像形成面的位置偏移，半导体晶片14的高度位置根据第二分量掩模12b的掩模基板厚度沿光轴方向移动， 在执行使用层叠掩模12的曝光处理之前，其包括形成有遮光区域和透光区域的图案的第一成分掩模12a和形成有相移图案的第二成分掩模12b，以产生 透射光的相移。
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42.发明授权Exposure method, aligner, and method manufacturing semiconductor integrated circuit devices 失效半导体集成电路器件的曝光方法，对准器和方法制造
公开(公告)号：US5932395A
公开(公告)日：1999-08-03
申请号：US92139
申请日：1998-06-05
CPC分类号： G03F9/70 , G03F1/26 , G03F1/30 , G03F1/60 , G03F7/70283 , G03F7/70466
摘要： To prevent positional shifts of the image forming plane during the exposure process using the two-layer phase shift mask, the height position of the semiconductor wafer 14 is moved in the optical axis direction according to the mask substrate thickness of the second component mask 12b, prior to performing the exposure process which uses the stacked-layer mask 12 that comprises a first component mask 12a formed with a pattern of light-shielding areas and light-transmitting areas and a second component mask 12b formed with a phase shift pattern to produce a phase shift in the transmitted light.
摘要翻译： 为了防止在使用两层相移掩模的曝光处理期间图像形成面的位置偏移，半导体晶片14的高度位置根据第二分量掩模12b的掩模基板厚度沿光轴方向移动， 在执行使用层叠掩模12的曝光处理之前，其包括形成有遮光区域和透光区域的图案的第一成分掩模12a和形成有相移图案的第二成分掩模12b，以产生 透射光的相移。
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43.发明授权Photomask, manufacture of photomask, formation of pattern, manufacture of semiconductor device, and mask pattern design system 失效光掩模，光掩模的制造，图案的形成，半导体器件的制造和掩模图案设计系统
公开(公告)号：US5700601A
公开(公告)日：1997-12-23
申请号：US495836
申请日：1995-06-28
申请人： Norio Hasegawa , Tsuneo Terasawa , Hiroshi Fukuda , Katsuya Hayano , Akira Imai , Akemi Moniwa , Shinji Okazaki
发明人： Norio Hasegawa , Tsuneo Terasawa , Hiroshi Fukuda , Katsuya Hayano , Akira Imai , Akemi Moniwa , Shinji Okazaki
CPC分类号： G03F1/32 , G03F1/26 , G03F1/36 , G03F7/70283 , G03F7/70433
摘要： A photomask used for printing a mask pattern by projection optics, in which a main pattern formed of a transparent area is provided in a semitransparent area formed of a semitransparent film and a phase shifter, and the phase angles of light beams passing through respective areas are different from each other substantially by 180.degree.. The photomask is intended to prevent a reduction in a production yield due to a resolution failure of the photomask, and to prevent generation of an unnecessary projected image. In this photomask, a transparent auxiliary pattern having the same phase angle of light as that of the transparent area is disposed around a main pattern formed of the transparent area, and a distance D between the center or a desired center line of the main pattern and that of the auxiliary pattern satisfies the relationship of D=b.lambda./NAm , where NAm is a mask-side numerical aperture of a projection lens, .lambda. is a wavelength of exposure light, and is a coefficient in the range of 1.35
摘要翻译： 用于通过投影光学器件打印掩模图案的光掩模，其中由透明区域形成的半透明区域设置在由半透明膜和移相器形成的半透明区域中，并且通过各个区域的光束的相位角为 彼此相差180度。 光掩模旨在防止由于光掩模的分辨率故障导致的产量降低，并且防止产生不必要的投影图像。 在该光掩模中，具有与透明区域相同的相位相位角的透明辅助图案设置在由透明区域形成的主图案周围，并且主图案的中心或期望中心线之间的距离D和 辅助图案的图案满足D =bλ/ NAm的关系，其中NAm是投影透镜的掩模侧数值孔径，λ是曝光光的波长，并且b是1.35的范围内的系数
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44.发明授权
公开(公告)号：US5318868A
公开(公告)日：1994-06-07
申请号：US883532
申请日：1992-05-15
申请人： Norio Hasegawa , Fumio Murai
发明人： Norio Hasegawa , Fumio Murai
CPC分类号： G03F1/26 , G03F1/32 , G03F7/70466 , G03F7/70475
摘要： A photomask which is suitable for a phase shift method and a method for manufacturing a semiconductor device using the photomask is disclosed. The photomask comprises a transparent area, a translucent area and an opaque are arranged in a particular manner relative to a shifter film. In particular, the different elements are arranged so that the lowering of intensity and the amplitude of a transmitted light in the transparent area caused by an unnecessary peripheral part of a shifter film are smaller than the lowering of the intensity and the amplitude of a transmitted light through a transparent area. This serves to prevent an undesirable influence of the unnecessary peripheral part of so that a shifter film can reading be prevented, and a connected pattern can be formed.
摘要翻译： 公开了适用于相移方法的光掩模和使用光掩模的半导体器件的制造方法。 光掩模包括透明区域，半透明区域和不透明区域，以相对于移位膜的特定方式布置。 特别地，不同的元件被布置成使得由移位膜的不必要的周边部分引起的在透明区域中的透射光的强度和振幅的降低小于透射光的强度和振幅的降低 通过透明区域。 这用于防止不必要的周边部分的不期望的影响，从而防止移位膜读取，并且可以形成连接的图案。
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公开(公告)号：US5296729A
公开(公告)日：1994-03-22
申请号：US782623
申请日：1991-10-25
申请人： Toshiaki Yamanaka , Norio Hasegawa , Toshihiko Tanaka , Takashi Hashimoto , Koichiro Ishibashi , Naotaka Hashimoto , Akihiro Shimizu , Yasuhiro Sugawara , Tokuo Kure , Shimpei Iijima , Takashi Nishida , Eiji Takeda
发明人： Toshiaki Yamanaka , Norio Hasegawa , Toshihiko Tanaka , Takashi Hashimoto , Koichiro Ishibashi , Naotaka Hashimoto , Akihiro Shimizu , Yasuhiro Sugawara , Tokuo Kure , Shimpei Iijima , Takashi Nishida , Eiji Takeda
IPC分类号： G03F1/29 , G03F1/30 , G03F1/68 , H01L21/027 , H01L21/8244 , H01L27/11 , H01L27/02 , H01L29/00 , H01L29/78
CPC分类号： H01L27/1108 , Y10S257/903
摘要： There is provided a technique capable of reducing the electrode resistance by widening the effective area of an electrode in a cell for a standard potential supply connected to the memory cell. There is also provided a technique capable of reducing the memory cell area by reducing the area necessary for separation between the electrode in a cell for the standard potential supply and adjacent other electrodes. Two transfer MOS transistors of a first conductivity type and two driver MOS transistors are provided. A conductive layer for fixing the source potential of the driver MOS transistors to standard potential is so disposed above the transfer and driver MOS transistors as to the wholly cover the memory cell. Separation is carried out by using a photo-mask having an optically transparent substrate provided within the same transmissive portion with a pattern of a plurality of so-called phase shifter regions for inversion of the phase of transmitting light.
摘要翻译： 提供了一种能够通过扩大连接到存储单元的标准电位电源的单元中的电极的有效面积来减小电极电阻的技术。 还提供了一种能够通过减小用于标准电位电极的电极中的电极与相邻的其它电极之间分离所需的面积来减小存储单元面积的技术。 提供了第一导电类型的两个传输MOS晶体管和两个驱动器MOS晶体管。 用于将驱动器MOS晶体管的源极电位固定为标准电位的导电层设置在传输和驱动器MOS晶体管之上，以完全覆盖存储器单元。 通过使用具有设置在相同透射部分内的光学透明基板的光掩模进行分离，其具有多个所谓的移相器区域的图案，用于反转透射相位的相位。
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公开(公告)号：US5235400A
公开(公告)日：1993-08-10
申请号：US418525
申请日：1989-10-10
IPC分类号： G01N21/45 , G01N21/956 , G03F7/20
CPC分类号： G03F7/70866 , G01N21/956 , G01N21/45
摘要： A method of and an apparatus for detecting a defect on a phase-shifting mask for use in a projection aligner in which either or both of respective intensities of transmitted and reflected light beams from the mask illuminated with light are used for detecting a defect on the mask.
摘要翻译： 一种用于检测用于投影对准器的相移掩模上的缺陷的方法和装置，其中使用由光照射的掩模的透射和反射光束的各个强度中的任一个或两个来检测 面具。
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47.发明授权
公开(公告)号：US4992825A
公开(公告)日：1991-02-12
申请号：US369150
申请日：1989-06-21
IPC分类号： G03F7/20
CPC分类号： G03F7/70575 , G03F7/2022 , G03F7/70241 , G03F7/70333 , G03F7/70858
摘要： An area on a photoresist film which is formed on a substrate surface having a topography, is exposed a plurality of times in such a manner that the image plane of a mask pattern is formed at a plurality of positions which are spaced apart from a reference plane in the substrate in the direction of an optical axis, and then the photoresist film is developed to form a resist pattern. According to the above method, the effective focal depth of the projection aligner used is enhanced, and moreover the reduction of the image contrast at the photoresist film is very small by the plural exposure operations. Accordingly, a fine pattern can be formed accurately on the substrate surface having the topography.
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公开(公告)号：US4937619A
公开(公告)日：1990-06-26
申请号：US307513
申请日：1989-02-08
申请人： Hiroshi Fukuda , Norio Hasegawa , Toshihiko Tanaka
发明人： Hiroshi Fukuda , Norio Hasegawa , Toshihiko Tanaka
IPC分类号： G03F7/20
CPC分类号： G03F7/70575 , G03F7/70241 , G03F7/70333 , G03F7/70858
摘要： There are disclosed a projection aligner, and an exposure method, capable of largely increasing the effective focus latitude of a fine pattern by using light having a plurality of different wavelengths to perform projection exposure and by setting a plurality of focal planes on an identical optical axis by means of chromatic aberration of the projection lens. The present invention makes it possible to cope with insufficient depth of focus caused by a shortened wavelength of exposure light, an increased numerical aperture of the projection lens, increased uneven topography of the substrate surface incurred from the device structure formed in three dimensions, inclination of the substrate, and field curvature of the projection lens, for example.
摘要翻译： 公开了一种投影对准器和曝光方法，其能够通过使用具有多个不同波长的光来大幅提高精细图案的有效焦点宽度，以进行投影曝光，并通过在相同的光轴上设置多个焦平面 通过投影透镜的色差。 本发明使得可以应对由于曝光光的波长缩短引起的焦点不足，投影透镜的数值孔径的增加，从三维形成的元件结构引起的衬底表面的不均匀的形貌的增加， 基板和投影透镜的场曲率。
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公开(公告)号：US4563241A
公开(公告)日：1986-01-07
申请号：US625240
申请日：1984-06-27
摘要： After a bottom layer film, an intermediate film and a top layer film were laminated and formed on a film which is processed and which was formed on a substrate having a different level portion, the patterns of the top layer film are sequentially transferred to the intermediate film, bottom layer film and film to be processed, thereby forming the patterns of the film to be processed. By minimizing the differences among the light refractive index of the intermediate film and the light refractive indexes of the bottom and top layer films, the patterns can be formed with a far higher degree of accuracy than that by the conventional multi layer resist method.
摘要翻译： 在底层膜之后，将中间膜和顶层膜层压并形成在被加工的膜上，并且形成在具有不同级别部分的基板上，将顶层膜的图案依次转印到中间层 膜，底层膜和被处理膜，从而形成待加工膜的图案。 通过最小化中间膜的光折射率与底层和顶层膜的光折射率之间的差异，可以以比常规多层抗蚀剂法高的精度形成图案。
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50.发明申请DIFFRACTION GRATING MANUFACTURING METHOD, SPECTROPHOTOMETER, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开衍射光栅制造方法，分光光度计和半导体器件制造方法公开(公告)号：US20140092384A1
公开(公告)日：2014-04-03
申请号：US14118375
申请日：2012-05-17
CPC分类号： G02B5/1857 , G01J3/0262 , G01J3/18 , G01J3/42 , G02B5/18 , G02B5/1814 , G02B5/1861 , G03F1/50 , G03F1/54 , G03F7/0005 , H01L21/26
摘要： The present invention has been made in view of the above, and an object thereof is to provide a manufacturing technique capable of manufacturing a diffraction grating which is suitable for use in a spectrophotometer and has an apex angle of a convex portion of about 90° and can satisfy high diffraction efficiency and a low stray light amount. A method of manufacturing a diffraction grating, the method including: setting an exposure condition such that a sectional shape of a convex portion of a resist on a substrate, which has been formed by exposure, is an asymmetric triangle with respect to an opening portion shape of a mask having an opening portion with a periodic structure and an angle formed by a long side and a short side of the triangle is about 90°; and performing exposure.
摘要翻译： 发明内容本发明是鉴于上述问题而完成的，其目的在于提供一种制造技术，其能够制造适用于分光光度计的衍射光栅，并具有约90°的凸部的顶角和 可以满足高衍射效率和低杂散光量。 一种制造衍射光栅的方法，该方法包括：设置曝光条件，使得通过曝光形成的基板上的抗蚀剂的凸部的截面形状相对于开口部形状为不对称三角形 具有周期性结构的开口部分和由三角形的长边和短边形成的角度的面具为约90°; 并进行曝光。
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