Abstract:
A process for making and using a semiconductor wafer includes instantiating first and second designs of experiments (DOEs), each comprised of at least two fill cells. The fill cells contain structures configured to obtain in-line data via non-contact electrical measurements (“NCEM”). The first DOE contains fill cells configured to enable non-contact (NC) detection of chamfer shorts, and the second DOE contains fill cells configured to enable NC detection of corner shorts. The process may further include obtaining NC measurements from the first and/or second DOE(s) and using such measurements, at least in part, to selectively perform additional processing, metrology or inspection steps on the wafer, and/or on other wafer(s) currently being manufactured.
Abstract:
An IC includes logic cells, selected from a standard cell library, and fill cells, configured for compatibility with the standard logic cells. The fill cells contain structures configured to obtain in-line data via non-contact electrical measurements (“NCEM”). The IC includes such NCEM-enabled fill cells configured to enable detection and/or measurement of a variety of short-circuit failure modes, including at least one chamfer-short-related failure mode, one AACNT-short-related failure mode, one GATE-short-related failure mode, and one TS-short-related failure mode.
Abstract:
An IC includes logic cells, selected from a standard cell library, and fill cells, configured for compatibility with the standard logic cells. The fill cells contain structures configured to obtain in-line data via non-contact electrical measurements (“NCEM”). The IC includes such NCEM-enabled fill cells configured to enable detection and/or measurement of a variety of open-circuit and short-circuit failure modes, including at least one via-open-related failure mode, one GATECNT-short-related failure mode, one metal-short-related failure mode, and one AA-short-related failure mode.
Abstract:
An IC includes logic cells, selected from a standard cell library, and fill cells, configured for compatibility with the standard logic cells. The fill cells contain structures configured to obtain in-line data via non-contact electrical measurements (“NCEM”). The IC includes such NCEM-enabled fill cells configured to enable detection and/or measurement of a variety of open-circuit and short-circuit failure modes, including at least one via-open-related failure mode, one AACNT-short-related failure mode, one GATECNT-short-related failure mode, and one TS-short-related failure mode.
Abstract:
An IC includes logic cells, selected from a standard cell library, and fill cells, configured for compatibility with the standard logic cells. The fill cells contain structures configured to obtain in-line data via non-contact electrical measurements (“NCEM”). The IC includes such NCEM-enabled fill cells configured to enable detection and/or measurement of a variety of open-circuit and short-circuit failure modes, including at least one via-open-related failure mode, one AACNT-short-related failure mode, one GATE-short-related failure mode, and one GATECNT-short-related failure mode.
Abstract:
Improved processes for manufacturing wafers, chips, or dies utilize in-line data obtained from non-contact electrical measurements (“NCEM”) of fill cells that contain structures configured to target/expose a variety of open-circuit, short-circuit, leakage, or excessive resistance failure modes, including GATE-snake-open and/or GATE-snake-resistance failure modes. Such processes may involve evaluating Designs of Experiments (“DOEs”), comprised of multiple NCEM-enabled fill cells, in at least two variants, all targeted to the same failure mode(s).
Abstract:
The present invention discloses an e-beam inspection tool, and an apparatus for detecting defects. In one aspect is described an apparatus for detecting defects that includes a dual-deflection system that moves the e-beam over the integrated circuit to each of the plurality of predetermined locations, the dual deflection system including a magnetic deflection component that provides by magnetic deflection for movement of the e-beam through a plurality of areas on the integrated circuit and an electrostatic deflection component that provides by electrostatic deflection for movement of the e-beam within each of the plurality of areas.
Abstract:
The present invention discloses an e-beam inspection tool, and an apparatus for detecting defects. In one aspect is described an apparatus for detecting defects that includes a focusing column that accelerates the e-beam and separately, for each of the plurality of predetermined locations, focuses the e-beam to a predetermined non-circular spot that is within the predetermined surface area of each of the plurality of predetermined locations based upon the major axis,
Abstract:
Systems, devices, and methods for performing a non-contact electrical measurement (NCEM) on a NCEM-enabled cell included in a NCEM-enabled cell vehicle may be configured to perform NCEMs while the NCEM-enabled cell vehicle is moving. The movement may be due to vibrations in the system and/or movement of a movable stage on which the NCEM-enabled cell vehicle is positioned. Position information for an electron beam column producing the electron beam performing the NCEMs and/or for the moving stage may be used to align the electron beam with targets on the NCEM-enabled cell vehicle while it is moving.
Abstract:
Systems, devices, and methods for performing a non-contact electrical measurement (NCEM) on a NCEM-enabled cell included in a NCEM-enabled cell vehicle may be configured to perform NCEMs while the NCEM-enabled cell vehicle is moving. The movement may be due to vibrations in the system and/or movement of a movable stage on which the NCEM-enabled cell vehicle is positioned. Position information for an electron beam column producing the electron beam performing the NCEMs and/or for the moving stage may be used to align the electron beam with targets on the NCEM-enabled cell vehicle while it is moving.