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    PHYSICALLY UNCLONABLE FUNCTION BASED ON COMPARISON OF MTJ RESISTANCES
    42.
    发明申请
    PHYSICALLY UNCLONABLE FUNCTION BASED ON COMPARISON OF MTJ RESISTANCES 有权

    公开(公告)号：US20170365316A1

    公开(公告)日：2017-12-21

    申请号：US15185441

    申请日：2016-06-17

    Applicant: QUALCOMM Incorporated

    Inventor： Peiyuan Wang ,  Jung Pill Kim ,  Jimmy Jianan Kan ,  Chando Park ,  Seung Kang

    IPC: G11C11/16

    CPC classification number: G11C11/1675 ,  G11C7/20 ,  G11C11/1693 ,  G11C11/1695 ,  G11C14/0081

    Abstract: In a particular aspect, an apparatus includes a magnetic random access memory (MRAM) cell including a pair of cross coupled inverters including a first inverter and a second inverter. The first inverter includes a first transistor coupled to a first node and a second transistor coupled to the first node. The second inverter includes a third transistor coupled to a second node and a fourth transistor coupled to the second node. The MRAM cell includes a first magnetic tunnel junction (MTJ) element coupled to the second transistor and a second MTJ element coupled to the fourth transistor. The apparatus further includes a voltage initialization circuit coupled to the MRAM cell. The voltage initialization circuit is configured to substantially equalize voltages of the first node and the second node in response to an initialization signal.

    Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layer
    46.
    发明授权
    Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layer 有权
    垂直磁性隧道结（pMTJ）器件采用薄的钉扎层堆叠，并提供了一个向上反向平行（AP）层下方的体心立方（BCC）结晶/非晶结构的转变开始

    公开(公告)号：US09590010B1

    公开(公告)日：2017-03-07

    申请号：US15079634

    申请日：2016-03-24

    Applicant: QUALCOMM Incorporated

    Inventor： Matthias Georg Gottwald ,  Jimmy Jianan Kan ,  Chando Park ,  Xiaochun Zhu ,  Seung Hyuk Kang

    IPC: H01L29/66 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02 ,  G11C11/16

    CPC classification number: H01L27/228 ,  G11C11/161 ,  H01L27/11582 ,  H01L28/00 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: Perpendicular magnetic tunnel junction (pMTJ) devices employing a pinned layer stack with a thin top anti-parallel (AP2) layer and having a transitioning layer providing a transitioning start to a body-centered cubic (BCC) crystalline/amorphous structure below the top anti-parallel (AP2) layer, to promote a high tunnel magnetoresistance ratio (TMR) with reduced pinned layer thickness are disclosed. A first anti-parallel (AP) ferromagnetic (AP1) layer in a pinned layer has a face-centered cubic (FCC) or hexagonal closed packed (HCP) crystalline structure. A transitioning material (e.g., Iron (Fe)) is provided in a transitioning layer between the AP1 layer and an AFC layer (e.g., Chromium (Cr)) that starts a transition from a FCC or HCP crystalline structure, to a BCC crystalline/amorphous structure. In this manner, a second AP ferromagnetic (AP2) layer disposed on the AFC layer can be provided in a reduced thickness BCC crystalline or amorphous structure to provide a high TMR with a reduced pinned layer thickness.

    Abstract translation: 垂直磁性隧道结（pMTJ）器件采用具有薄顶部反平行（AP2）层的钉扎层叠层，并且具有向顶部抗反射平面（AP2）层下方的体心立方（BCC）结晶/非晶结构提供过渡开始的过渡层 公开了平行（AP2）层，以促进具有减小的钉扎层厚度的高隧道磁阻比（TMR）。 固定层中的第一反平行（AP）铁磁（AP1）层具有面心立方（FCC）或六边形封闭（HCP）晶体结构。 在AP1层和开始从FCC或HCP晶体结构的转变到BCC晶体/晶体的AFC层（例如，铬（Cr））之间的过渡层中提供了转变材料（例如，铁（Fe） 无定形结构。 以这种方式，设置在AFC层上的第二AP铁磁（AP2）层可以以减小的厚度BCC晶体或非晶结构提供，以提供具有减小的钉扎层厚度的高TMR。

    DECOUPLING OF SOURCE LINE LAYOUT FROM ACCESS TRANSISTOR CONTACT PLACEMENT IN A MAGNETIC TUNNEL JUNCTION (MTJ) MEMORY BIT CELL TO FACILITATE REDUCED CONTACT RESISTANCE
    47.
    发明申请
    DECOUPLING OF SOURCE LINE LAYOUT FROM ACCESS TRANSISTOR CONTACT PLACEMENT IN A MAGNETIC TUNNEL JUNCTION (MTJ) MEMORY BIT CELL TO FACILITATE REDUCED CONTACT RESISTANCE 有权
    来自磁通线接头（MTJ）存储器单元的访问晶体管接点放置的源线布局解耦以便于减少接触电阻

    公开(公告)号：US20160315248A1

    公开(公告)日：2016-10-27

    申请号：US14860931

    申请日：2015-09-22

    Applicant: QUALCOMM Incorporated

    Inventor： Xiaochun Zhu ,  Yu Lu ,  Chando Park ,  Seung Hyuk Kang

    IPC: H01L43/02 ,  H01L43/12 ,  H01L43/08

    CPC classification number: G11C11/1659 ,  G11C11/02 ,  G11C11/161 ,  H01L27/228

    Abstract: Magnetic tunnel junction (MTJ) memory bit cells that decouple source line layout from access transistor node size to facilitate reduced contact resistance are disclosed. In one example, an MTJ memory bit cell is provided that includes a source plate disposed above and in contact with a source contact for a source node of an access transistor. A source line is disposed above and in electrical contact with the source plate to electrically connect the source line to the source node. The source plate allows the source line to be provided in a higher metal level from the source and drain contacts of the access transistor such that the source line is not in physical contact with (i.e., decoupled from) the source contact. This allows pitch between the source line and drain column to be relaxed from the width of the source and drain nodes without having to increase contact resistance.

    Abstract translation: 公开了将源极线布局与存取晶体管节点尺寸分离以便于降低接触电阻的磁隧道结（MTJ）存储器位单元。 在一个示例中，提供MTJ存储器位单元，其包括设置在存取晶体管的源极节点的源极触点上方并与之接触的源极板。 源极线设置在源极之上并与源极电接触以将源极线电连接到源极节点。 源极板允许源极线从存取晶体管的源极和漏极触点提供在更高的金属电平，使得源极线不与源极接触物理接触（即，去耦合）。 这允许源极线和漏极列之间的间距从源极和漏极节点的宽度松弛，而不必增加接触电阻。

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