公开(公告)号：US08815640B2

公开(公告)日：2014-08-26

申请号：US13652668

申请日：2012-10-16

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Katsuaki Tochibayashi ,  Satoshi Higano ,  Shunpei Yamazaki

IPC分类号： H01L29/26 ,  H01L21/46

CPC分类号： H01L29/66969 ,  H01L29/22 ,  H01L29/7869

摘要： A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. In a semiconductor device including a bottom-gate transistor in which an insulating layer functioning as a channel protective film is provided over an oxide semiconductor film, elements contained in an etching gas can be prevented from remaining as impurities on a surface of the oxide semiconductor film by performing impurity-removing process after formation of an insulating layer provided over and in contact with the oxide semiconductor film and/or formation of source and drain electrode layers. The impurity concentration in the surface of the oxide semiconductor film is lower than or equal to 5×1018 atoms/cm3, preferably lower than or equal to 1×1018 atoms/cm3.

摘要翻译： 提供了一种高度可靠的半导体器件和半导体器件的制造方法。 在包含作为沟道保护膜的绝缘层设置在氧化物半导体膜上的底栅晶体管的半导体器件中，可以防止包含在蚀刻气体中的元素作为杂质残留在氧化物半导体膜的表面上 通过在形成设置在氧化物半导体膜上并与氧化物半导体膜接触并且/或形成源极和漏极电极层的绝缘层之后进行杂质去除处理。 氧化物半导体膜表面的杂质浓度低于或等于5×1018原子/ cm3，优选为1×1018原子/ cm3以下。

公开(公告)号：US12100768B2

公开(公告)日：2024-09-24

申请号：US17606823

申请日：2020-05-12

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei Yamazaki ,  Ryota Hodo ,  Katsuaki Tochibayashi ,  Hiroaki Honda ,  Kentaro Sugaya

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/78651

摘要： A semiconductor device with small variations in transistor characteristics is provided. The semiconductor device includes an oxide; a first conductor and a second conductor provided apart from each other over the oxide; an insulator in a region between the first conductor and the second conductor over the oxide; and a conductor over the insulator. A side surface of the oxide, a top surface of the first conductor, a side surface of the first conductor, a top surface of the second conductor, and a side surface of the second conductor include regions in contact with a nitride containing silicon.

公开(公告)号：US11817507B2

公开(公告)日：2023-11-14

申请号：US17667655

申请日：2022-02-09

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei Yamazaki ,  Tsutomu Murakawa ,  Hiroki Komagata ,  Katsuaki Tochibayashi ,  Kentaro Sugaya

IPC分类号： H01L29/786

CPC分类号： H01L29/7869

摘要： A semiconductor device having a high on-state current is provided.
The semiconductor device includes a first oxide; a first conductor and a second conductor provided over the first oxide to be separated from each other; and a second oxide provided over the first oxide and between the first conductor and the second conductor. Each of the first oxide and the second oxide has crystallinity, the first oxide includes a region where a c-axis is aligned substantially perpendicularly to a top surface of the first oxide, and the second oxide includes a region where the c-axis is aligned substantially perpendicularly to the top surface of the first oxide, a region where the c-axis is aligned substantially perpendicularly to a side surface of the first conductor, and a region where the c-axis is aligned substantially perpendicularly to a side surface of the second conductor.

公开(公告)号：US11316051B2

公开(公告)日：2022-04-26

申请号：US16963928

申请日：2019-02-21

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Katsuaki Tochibayashi ,  Ryota Hodo ,  Kentaro Sugaya ,  Naoto Yamade

IPC分类号： H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L27/108 ,  H01L29/24 ,  H01L29/66

摘要： A semiconductor device includes a transistor including, a first to fifth insulator, a first to third oxide, a first to third conductor. An opening reaching the second oxide is provided in the fourth insulator and the fifth insulator. The third oxide, the third insulator, and the third conductor are arranged sequentially from the inner wall side of the opening so as to fill the opening. In the channel length direction of the transistor, at least part of the fourth insulator in a region where the fourth insulator and the second oxide do not overlap with each other is in contact with the first insulator. In the channel width direction of the transistor, at least part of the third oxide in a region where the third oxide and the second oxide do not overlap with each other is in contact with the first insulator.

公开(公告)号：US11205664B2

公开(公告)日：2021-12-21

申请号：US16770670

申请日：2018-12-19

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Ryota Hodo ,  Tomoyo Kamogawa ,  Katsuaki Tochibayashi

IPC分类号： H01L27/00 ,  H01L29/00 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

摘要： A highly reliable semiconductor device having a high on-state current is provided. The semiconductor device includes a first insulator, a second insulator over the first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a first conductor and a second conductor over the second oxide, a third insulator over the first conductor, a fourth insulator over the second conductor, a third oxide over the second oxide, a fifth insulator over the third oxide, a third conductor that is positioned over the fifth insulator and overlaps with the third oxide, a sixth insulator covering the first to fifth insulators, the first oxide, the second oxide, and the first to third conductors, and a seventh insulator over the sixth insulator.

公开(公告)号：US11031403B2

公开(公告)日：2021-06-08

申请号：US16605548

申请日：2018-04-19

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei Yamazaki ,  Daisuke Matsubayashi ,  Kiyoshi Kato ,  Katsuaki Tochibayashi ,  Shuhei Nagatsuka

IPC分类号： H01L27/108 ,  H01L27/1156 ,  H01L27/06 ,  H01L29/786 ,  H01L21/311 ,  H01L27/32 ,  H01L27/12

摘要： A semiconductor device that can be highly integrated is provided. The semiconductor device includes a first transistor, a second transistor, a first capacitor, and a second capacitor. The first transistor includes an oxide over a first insulator, a second insulator over the oxide, a first conductor over the second insulator, a third insulator over the first conductor, a fourth insulator in contact with the second insulator, the first conductor, and the third insulator, and a fifth insulator in contact with the fourth insulator. The second transistor includes an oxide over the first insulator, a sixth insulator over the oxide, a second conductor over the sixth insulator, a seventh insulator over the second conductor, an eighth insulator in contact with the sixth insulator, the second conductor, and the seventh insulator, and a ninth insulator in contact with the eighth insulator. The first capacitor includes an oxide, a tenth insulator over the oxide, and a third conductor over the tenth insulator. The second capacitor includes an oxide, an eleventh insulator over the oxide, and a fourth conductor over the eleventh insulator.

公开(公告)号：US10978563B2

公开(公告)日：2021-04-13

申请号：US16698476

申请日：2019-11-27

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Katsuaki Tochibayashi ,  Ryota Hodo ,  Shunpei Yamazaki

IPC分类号： H01L29/26 ,  H01L27/108

摘要： A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a first insulator; a first conductor over the first insulator; a second insulator over the first conductor; a first oxide over the second insulator; second and third conductors over the first oxide; a third insulator over the second and third conductors; a second oxide over the first oxide and between the second and third conductors; a fourth insulator over the second oxide; a fourth conductor over the fourth insulator; a fifth insulator in contact with the third insulator and the second oxide; a sixth insulator in contact with the first, second, third, and fifth insulators, and the second oxide; and a seventh insulator in contact with the fourth and sixth insulators, the second oxide, and the fourth conductor. The first, sixth, and seventh insulators each contain a silicon nitride. The fifth insulator contains an aluminum oxide.

公开(公告)号：US10164120B2

公开(公告)日：2018-12-25

申请号：US15576445

申请日：2016-05-18

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Motomu Kurata ,  Shinya Sasagawa ,  Katsuaki Tochibayashi ,  Satoru Okamoto ,  Akihisa Shimomura

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/28 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L27/06 ,  H01L27/08 ,  H01L27/088 ,  H01L27/092 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  H01L27/115 ,  H01L51/50 ,  H01L27/146 ,  H05B33/14 ,  G06F9/32 ,  G06K19/07 ,  H01L23/31 ,  H01L23/498 ,  H01L23/00 ,  H01L27/12 ,  G02F1/1368 ,  H01L27/32

摘要： A transistor including a semiconductor, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator is manufactured by forming a hard mask layer including a fourth conductor over the second insulator, a third insulator over the fourth conductor, forming an opening portion in the second insulator with the hard mask layer as the mask, eliminating the hard mask layer by forming the opening portion, and forming the first insulator and the first conductor in the opening portion.

公开(公告)号：US09824898B2

公开(公告)日：2017-11-21

申请号：US15429547

申请日：2017-02-10

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shinya Sasagawa ,  Motomu Kurata ,  Katsuaki Tochibayashi

IPC分类号： H01L29/40 ,  H01L21/44 ,  H01L29/786 ,  H01L29/66 ,  H01L21/4757 ,  H01L29/45 ,  H01L29/49 ,  H01L27/12

CPC分类号： H01L21/44 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/47573 ,  H01L27/1218 ,  H01L27/1225 ,  H01L29/401 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

摘要： To provide a highly reliable semiconductor device using an oxide semiconductor. The semiconductor device includes a first electrode layer; a second electrode layer positioned over the first electrode layer and including a stacked-layer structure of a first conductive layer and a second conductive layer; and an oxide semiconductor film and an insulating film positioned between the first electrode layer and the second electrode layer in a thickness direction. The first conductive layer and the insulating film have a first opening portion in a region overlapping with the first electrode layer, The oxide semiconductor film has a second opening portion in a region overlapping with the first opening portion. The second conductive layer is in contact with the first electrode layer exposed in the first opening portion and the second opening portion.

公开(公告)号：US09768318B2

公开(公告)日：2017-09-19

申请号：US15019004

申请日：2016-02-09

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Yoshinobu Asami ,  Yutaka Okazaki ,  Motomu Kurata ,  Katsuaki Tochibayashi ,  Shinya Sasagawa ,  Kensuke Yoshizumi ,  Hideomi Suzawa

IPC分类号： H01L29/49 ,  H01L29/786 ,  H01L29/66 ,  H01L21/4757 ,  H01L21/47 ,  H01L21/477 ,  H01L33/00

CPC分类号： H01L29/7869 ,  H01L21/47 ,  H01L21/4757 ,  H01L21/477 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78648 ,  H01L33/00

摘要： A miniaturized transistor, a transistor with low parasitic capacitance, a transistor with high frequency characteristics, or a semiconductor device including the transistor is provided. The semiconductor device includes a first insulator, an oxide semiconductor over the first insulator, a first conductor and a second conductor that are in contact with the oxide semiconductor, a second insulator that is over the first and second conductors and has an opening reaching the oxide semiconductor, a third insulator over the oxide semiconductor and the second insulator, and a fourth conductor over the third insulator. The first conductor includes a first region and a second region. The second conductor includes a third region and a fourth region. The second region faces the third region with the first conductor and the first insulator interposed therebetween. The second region is thinner than the first region. The third region is thinner than the fourth region.