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    Method for processing thin film and method for manufacturing semiconductor device
    41.
    发明授权
    Method for processing thin film and method for manufacturing semiconductor device 有权
    薄膜的加工方法及半导体装置的制造方法

    公开(公告)号：US09305774B2

    公开(公告)日：2016-04-05

    申请号：US14219111

    申请日：2014-03-19

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Taiga Muraoka ,  Motomu Kurata ,  Shinya Sasagawa ,  Katsuaki Tochibayashi

    IPC: H01L21/311 ,  H01L21/02 ,  H01L21/033 ,  H01L21/3213 ,  H01L29/786 ,  H01L29/66

    CPC classification number: H01L21/02554 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02565 ,  H01L21/02667 ,  H01L21/0337 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32139 ,  H01L29/66969 ,  H01L29/7869

    Abstract: A stable and minute processing method of a thin film is provided. Further, a miniaturized semiconductor device is provided. A method for processing a thin film includes the following steps: forming a film to be processed over a formation surface; forming an organic coating film over the film to be processed; forming a resist film over the organic coating film; exposing the resist film to light or an electron beam; removing part of the resist film by development to expose part of the organic coating film; depositing an organic material layer on the top surface and a side surface of the resist film by plasma treatment; etching part of the organic coating film using the resist film and the organic material layer as masks to expose part of the film to be processed; and etching part of the film to be processed using the resist film and the organic material layer as masks.

    Abstract translation: 提供了薄膜的稳定和微小的加工方法。 此外，提供了一种小型化的半导体器件。 一种处理薄膜的方法包括以下步骤：在地层表面上形成待处理的薄膜; 在待处理的膜上形成有机涂膜; 在有机涂膜上形成抗蚀膜; 将抗蚀剂膜暴露于光或电子束; 通过显影去除部分抗蚀剂膜以暴露部分有机涂膜; 通过等离子体处理在抗蚀剂膜的顶表面和侧表面上沉积有机材料层; 使用所述抗蚀剂膜和所述有机材料层作为掩模蚀刻所述有机涂膜的一部分，以暴露待处理膜的部分; 并使用抗蚀剂膜和有机材料层作为掩模蚀刻待处理的膜的一部分。

    Semiconductor device and method for manufacturing semiconductor device
    44.
    发明授权
    Semiconductor device and method for manufacturing semiconductor device 有权

    公开(公告)号：US12176439B2

    公开(公告)日：2024-12-24

    申请号：US17428753

    申请日：2020-02-13

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei Yamazaki ,  Erika Takahashi ,  Tsutomu Murakawa ,  Shinya Sasagawa ,  Katsuaki Tochibayashi

    IPC: H01L29/786 ,  H01L29/04 ,  H01L29/66

    Abstract: A semiconductor device with small fluctuations in transistor characteristics can be provided. The semiconductor device includes a first oxide, a second oxide and a third oxide over the first oxide, a first conductor over the second oxide, a second conductor over the third oxide, a fourth oxide over the first oxide and between the second oxide and the third oxide, a first insulator over the fourth oxide, and a third conductor over the first insulator. The first oxide includes a groove in a region not overlapping with the second oxide and the third oxide. The first oxide includes a first layered crystal substantially parallel to the surface where the first oxide is formed. In the groove, the fourth oxide includes a second layered crystal substantially parallel to the surface where the first oxide is formed. A concentration of aluminum atoms at an interface between the first oxide and the fourth oxide and in the vicinity of the interface is less than or equal to 5.0 atomic %.

    Semiconductor device and semiconductor device manufacturing method
    48.
    发明授权
    Semiconductor device and semiconductor device manufacturing method 有权

    公开(公告)号：US11296233B2

    公开(公告)日：2022-04-05

    申请号：US16962558

    申请日：2019-02-01

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Katsuaki Tochibayashi ,  Kensuke Yoshizumi

    IPC: H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L29/423 ,  H01L29/51

    Abstract: A semiconductor device having favorable electrical characteristics can be provided. The semiconductor device having favorable electrical characteristics is provided. The semiconductor device has a structure including a first metal oxide layer including a first region, and a second region and a third region in which phosphorus, boron, aluminum, or magnesium is added and between which the first region is sandwiched; a conductive layer which overlaps with the first region; a first insulating layer which covers a side surface and a bottom surface of the conductive layer; a second metal oxide layer which covers a side surface and a bottom surface of the first insulating layer and is in contact with a top surface of the first region; a second insulating layer in contact with a top surface of the second region and a top surface of the third region and in contact with a side surface of the second metal oxide layer; a third insulating layer positioned over the second insulating layer and in contact with a side surface of the second metal oxide layer; a fourth insulating layer positioned over the third insulating layer and in contact with a side surface of the second metal oxide layer; a fifth insulating layer in contact with a top surface of the conductive layer, a top surface of the first insulating layer, a top surface of the second metal oxide layer, and a top surface of the fourth insulating layer.

    Semiconductor device and method for manufacturing semiconductor device
    49.
    发明授权
    Semiconductor device and method for manufacturing semiconductor device 有权

    公开(公告)号：US11245040B2

    公开(公告)日：2022-02-08

    申请号：US16970567

    申请日：2019-02-21

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei Yamazaki ,  Katsuaki Tochibayashi ,  Satoru Okamoto

    IPC: H01L29/786 ,  H01L29/22 ,  H01L29/51

    Abstract: A semiconductor device having a high on-state current is provided. The semiconductor device includes a first insulator; a first oxide over the first insulator; a first conductor and a second conductor that are apart from each other over the first oxide; a second insulator covering the first insulator, the first oxide, the first conductor, and the second conductor; a third insulator over the second insulator; a fourth insulator in contact with a first conductor, a side surface of the second conductor, a side surface of the second insulator, and a side surface of the third insulator; a fifth insulator that is over the first oxide and on an inner side of the fourth insulator; a third conductor on an inner side of the fifth insulator; and a sixth insulator that is in contact with a top surface of the fourth insulator and over the third insulator, the fifth insulator, and the third conductor. The fourth insulator is divided to be apart from each other over the first oxide.

    Semiconductor device and method for manufacturing semiconductor device
    50.
    发明授权
    Semiconductor device and method for manufacturing semiconductor device 有权

    公开(公告)号：US11177176B2

    公开(公告)日：2021-11-16

    申请号：US16649890

    申请日：2018-10-09

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Toshihiko Takeuchi ,  Hiromi Sawai ,  Ryota Hodo ,  Katsuaki Tochibayashi

    IPC: H01L21/8234 ,  H01L29/786

    Abstract: A semiconductor device that can have favorable electrical characteristics and can be highly integrated is provided.
    The semiconductor device includes a first insulator; a second insulator over the first insulator; an oxide over the second insulator; a first conductor and a second conductor over the oxide; a third insulator over the oxide; a third conductor positioned over the third insulator and overlapping with the oxide; a fourth insulator in contact with the second insulator, a side surface of the oxide, a side surface of the first conductor, a top surface of the first conductor, a side surface of the second conductor, a top surface of the second conductor, and a side surface of the third insulator; and a fifth insulator in contact with a top surface of the third insulator and a top surface of the third conductor, and a top surface of the fourth insulator is in contact with the fifth insulator.

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