公开(公告)号：US20170005118A1

公开(公告)日：2017-01-05

申请号：US15265932

申请日：2016-09-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Masayuki SAKAKURA ,  Yoshiaki OIKAWA ,  Kenichi OKAZAKI ,  Hotaka MARUYAMA

IPC: H01L27/12 ,  H01L21/385

CPC classification number: H01L27/1225 ,  H01L21/385 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/78648 ,  H01L29/7869 ,  H01L33/0041 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer which each have a shape whose end portions are located on an inner side than end portions of the semiconductor layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is provided between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected in an opening provided in a gate insulating layer through an oxide conductive layer.

Abstract translation: 目的是提高半导体器件的可靠性。 提供了包括驱动电路部分和在相同基板上的显示部分（也称为像素部分）的半导体器件。 驱动器电路部分和显示部分包括其中半导体层包括氧化物半导体的薄膜晶体管; 第一布线 和第二布线。 薄膜晶体管各自包括源极电极层和漏极电极层，每个源电极层和漏极电极层的端部位于比半导体层的端部更靠内侧的形状。 在驱动电路部分的薄膜晶体管中，半导体层设置在栅电极层和导电层之间。 第一布线和第二布线通过氧化物导电层在设置在栅极绝缘层中的开口中电连接。

公开(公告)号：US20160365460A1

公开(公告)日：2016-12-15

申请号：US15246853

申请日：2016-08-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Masayuki SAKAKURA ,  Yoshiaki OIKAWA ,  Kenichi OKAZAKI ,  Hotaka MARUYAMA ,  Masashi TSUBUKU

IPC: H01L29/786 ,  H01L29/24 ,  G11C19/28 ,  G02F1/1345 ,  G02F1/133 ,  H01L27/12 ,  G02F1/1368

CPC classification number: H01L27/1225 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/133528 ,  G02F1/1337 ,  G02F1/1339 ,  G02F1/13394 ,  G02F1/134336 ,  G02F1/13439 ,  G02F1/13454 ,  G02F1/136204 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133302 ,  G02F2001/133357 ,  G02F2201/123 ,  G11C19/28 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/247 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

Abstract: An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer.

公开(公告)号：US20160336352A1

公开(公告)日：2016-11-17

申请号：US15220430

申请日：2016-07-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Masahiro KATAYAMA ,  Masataka NAKADA

IPC: H01L27/12 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L27/3265 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.

公开(公告)号：US20160240682A1

公开(公告)日：2016-08-18

申请号：US15010045

申请日：2016-01-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa SHIMOMURA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yasumasa YAMANE ,  Yuhei SATO ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L21/02 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/786 ,  H01L29/78648 ,  H01L29/78696

Abstract: To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal to 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.

Abstract translation: 提供新型氧化物半导体膜。 氧化物半导体膜包括In，M和Zn。 M是Al，Ga，Y或Sn。 在氧化物半导体膜中的In的比例为4的情况下，M的比例大于等于1.5且小于等于2.5，Zn的比例大于等于2且小于或等于2， 等于4。

公开(公告)号：US20160155803A1

公开(公告)日：2016-06-02

申请号：US14952459

申请日：2015-11-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Masami JINTYOU ,  Yasutaka NAKAZAWA ,  Toshimitsu OBONAI ,  Yukinori SHIMA ,  Daisuke KUROSAKI

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/127 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: A change in electrical characteristics is inhibited and reliability is improved in a semiconductor device including an oxide semiconductor film. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, and a pair of electrodes over the oxide semiconductor film. The oxide semiconductor film includes a channel region and n-type regions in contact with the pair of electrodes. The channel region has fewer oxygen vacancies than the n-type regions.

Abstract translation: 在包括氧化物半导体膜的半导体器件中，电特性的变化受到抑制，可靠性提高。 半导体器件包括栅电极，栅电极上的栅极绝缘膜，栅极绝缘膜上的氧化物半导体膜，以及氧化物半导体膜上的一对电极。 氧化物半导体膜包括与该对电极接触的沟道区和n型区。 通道区域具有比n型区域少的氧空位。

公开(公告)号：US20160027926A1

公开(公告)日：2016-01-28

申请号：US14878446

申请日：2015-10-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Toshiyuki MIYAMOTO ,  Masafumi NOMURA ,  Takashi HAMOCHI ,  Kenichi OKAZAKI

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/51

CPC classification number: H01L29/7869 ,  H01L29/42384 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide insulating layer over the gate insulating layer, an oxide semiconductor layer being above and in contact with the oxide insulating layer and overlapping with the gate electrode layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The gate insulating layer includes a silicon film containing nitrogen. The oxide insulating layer contains one or more metal elements selected from the constituent elements of the oxide semiconductor layer. The thickness of the gate insulating layer is larger than that of the oxide insulating layer.

公开(公告)号：US20150380364A1

公开(公告)日：2015-12-31

申请号：US14847461

申请日：2015-09-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Takuya HANDA ,  Kenichi OKAZAKI

IPC: H01L23/00 ,  H01L29/786

CPC classification number: H01L23/564 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal oxide layer is in contact with an interlayer insulating layer covering a transistor, and has a stacked-layer structure including a first metal oxide layer having an amorphous structure and a second metal oxide layer having a polycrystalline structure. In the first metal oxide layer, there are no crystal grain boundaries, and grid intervals are wide as compared to those in a metal oxide layer in a crystalline state; thus, the first metal oxide layer easily traps moisture between the lattices. In the second metal oxide layer having a polycrystalline structure, crystal parts other than crystal grain boundary portions have dense structures and extremely low moisture permeability. Thus, the structure in which the metal oxide layer including the first metal oxide layer and the second metal oxide layer is in contact with the interlayer insulating layer can effectively prevent moisture permeation into the transistor.

Abstract translation: 金属氧化物层与覆盖晶体管的层间绝缘层接触，并且具有包括具有非晶结构的第一金属氧化物层和具有多晶结构的第二金属氧化物层的层叠结构。 在第一金属氧化物层中，与结晶状态的金属氧化物层相比，不存在晶粒边界，栅格间隔宽， 因此，第一金属氧化物层容易捕获晶格之间的水分。 在具有多晶结构的第二金属氧化物层中，除了晶界部分之外的晶体部分具有致密的结构和极低的透湿性。 因此，包括第一金属氧化物层和第二金属氧化物层的金属氧化物层与层间绝缘层接触的结构可以有效地防止水分渗入晶体管。

公开(公告)号：US20150243738A1

公开(公告)日：2015-08-27

申请号：US14626049

申请日：2015-02-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa SHIMOMURA ,  Yasumasa YAMANE ,  Yuhei SATO ,  Takahisa ISHIYAMA ,  Kenichi OKAZAKI ,  Chiho KAWANABE ,  Masashi OOTA ,  Noritaka ISHIHARA

IPC: H01L29/24 ,  C01G15/00 ,  H01L27/12

CPC classification number: H01L29/7869 ,  C01G15/006 ,  C01P2002/72 ,  C01P2002/89 ,  C01P2004/04 ,  C01P2006/40 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/78696

Abstract: Favorable electrical characteristics are given to a semiconductor device. Furthermore, a semiconductor device having high reliability is provided. One embodiment of the present invention is an oxide semiconductor film having a plurality of electron diffraction patterns which are observed in such a manner that a surface where the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm. The plurality of electron diffraction patterns include 50 or more electron diffraction patterns which are observed in different areas, the sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%, the first electron diffraction patterns account for 90% or more, the first electron diffraction pattern includes observed points which indicates that a c-axis is oriented in a direction substantially perpendicular to the surface where the oxide semiconductor film is formed.

Abstract translation: 给半导体器件提供有利的电特性。 此外，提供了具有高可靠性的半导体器件。 本发明的一个实施方案是具有多个电子衍射图案的氧化物半导体膜，其以使得形成氧化物半导体膜的表面被照射电子束，该电子束的半峰宽为 1nm。 多个电子衍射图案包括在不同区域中观察到的50个以上的电子衍射图案，第一电子衍射图案的百分比和第二电子衍射图案的百分比之和占100％，第一电子衍射图案占 90％以上时，第一电子衍射图案包括观察点，其表示c轴在与形成氧化物半导体膜的表面基本垂直的方向上取向。

公开(公告)号：US20150221775A1

公开(公告)日：2015-08-06

申请号：US14610383

申请日：2015-01-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Masataka NAKADA ,  Masahiro KATAYAMA

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/78648

Abstract: To provide a semiconductor device with small parasitic capacitance. Alternatively, to provide a semiconductor device with low power consumption. The semiconductor device includes a transistor and a capacitor. The transistor includes a first conductor, a first insulator over the first conductor, a semiconductor including a region overlapping with the first conductor with the first insulator interposed therebetween, a second insulator over the semiconductor, a second conductor including a region overlapping with the semiconductor with the second insulator interposed therebetween, and a third conductor and a fourth conductor including a region in contact with a top surface of the semiconductor. The capacitor includes a layer formed from the same layer as the first conductor and a layer formed from the same layer as the third conductor and the fourth conductor.

Abstract translation: 提供具有小寄生电容的半导体器件。 或者，为了提供低功耗的半导体器件。 半导体器件包括晶体管和电容器。 晶体管包括第一导体，第一导体上的第一绝缘体，包括与第一导体重叠的区域的半导体，第一绝缘体插入其间，半导体上的第二绝缘体，包括与半导体重叠的区域的第二导体， 插入其间的第二绝缘体，以及包括与半导体的顶表面接触的区域的第三导体和第四导体。 电容器包括由与第一导体相同的层形成的层和由与第三导体和第四导体相同的层形成的层。

公开(公告)号：US20150153599A1

公开(公告)日：2015-06-04

申请号：US14553269

申请日：2014-11-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Masahiro KATAYAMA

IPC: G02F1/1368 ,  H01L27/12 ,  G02F1/133 ,  G02F1/1362 ,  G02F1/1333

CPC classification number: H01L27/1225 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2227/323

Abstract: To provide a display device in which plural kinds of circuits are formed over one substrate and plural kinds of transistors corresponding to characteristics of the plural kinds of circuits are provided. The display device includes a pixel portion and a driver circuit that drives the pixel portion over one substrate. The pixel portion includes a first transistor including a first oxide semiconductor film. The driver circuit includes a second transistor including a second oxide semiconductor film. The first oxide semiconductor film and the second oxide semiconductor film are formed over one insulating surface. A channel length of the first transistor is longer than a channel length of the second transistor. The channel length of the first transistor is greater than or equal to 2.5 micrometer.

Abstract translation: 为了提供一种在一个衬底上形成多种电路的显示装置，并且提供了与多种电路的特性对应的多种晶体管。 显示装置包括像素部分和驱动电路，其驱动像素部分在一个衬底上。 像素部分包括包括第一氧化物半导体膜的第一晶体管。 驱动器电路包括包括第二氧化物半导体膜的第二晶体管。 第一氧化物半导体膜和第二氧化物半导体膜形成在一个绝缘表面上。 第一晶体管的沟道长度比第二晶体管的沟道长度长。 第一晶体管的沟道长度大于或等于2.5微米。