公开(公告)号：US20150132931A1

公开(公告)日：2015-05-14

申请号：US14321802

申请日：2014-07-01

Applicant: Solexel, Inc.

Inventor： Pawan Kapur ,  Mehrdad M. Moslehi ,  Sean M. Seutter ,  Mohammed Islam ,  Anand Deshpande

IPC: H01L31/18

CPC classification number: H01L31/1864 ,  H01L31/1804 ,  H01L31/1868 ,  H01L31/1876 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for thermal processing of a silicon substrate wherein first a silicon substrate is heated to an idle load temperature in the range of approximately 700° to 900° C. The silicon substrate is then heated to a temperature in the range of approximately 975° to 1200° C. in less than approximately 20 minutes. After thermal processing, the silicon substrate is cooled to an idle unload temperature in the range of approximately 700° to 900° C. in less than approximately 20 minutes.

Abstract translation: 一种用于硅衬底的热处理的方法，其中首先将硅衬底加热至大约700°至900°C范围内的空载负载温度。然后将硅衬底加热至约975°至 1200℃，小于约20分钟。 在热处理之后，硅基板在小于约20分钟内被冷却到约700℃至900℃的空载卸载温度。

公开(公告)号：US20150130499A1

公开(公告)日：2015-05-14

申请号：US14479540

申请日：2014-09-08

Applicant: Solexel, Inc.

Inventor： Swaroop Kommera ,  Pawan Kapur ,  Mehrdad M. Moslehi

IPC: H02S50/10 ,  G01R27/02

CPC classification number: H02S50/10 ,  G01R27/02 ,  H01L22/14 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/0682 ,  H02S50/00 ,  Y02E10/547

Abstract: Methods and structures for extracting at least one electric parametric value from a back contact solar cell having dual level metallization are provided.

Abstract translation: 提供了从具有双层金属化的背接触太阳能电池提取至少一个电参数值的方法和结构。

公开(公告)号：US20150129031A1

公开(公告)日：2015-05-14

申请号：US14539978

申请日：2014-11-12

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  Thom Stalcup ,  Karl-Josef Kramer ,  Anthony Calcaterra ,  Virendra V. Rana ,  Sean M. Seutter ,  Pawan Kapur ,  Michael Wingert

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0216

CPC classification number: H01L31/1804 ,  H01L31/022441 ,  H01L31/0682 ,  Y02E10/547 ,  Y02P70/521

Abstract: A back contact solar cell is described which includes a semiconductor light absorbing layer; a first-level metal layer (M1), the M1 metal layer on a back side of the light absorbing layer, the back side being opposite from a front side of the light absorbing layer designed to receive incident light; an electrically insulating backplane sheet backside of said solar cell with the M1 layer, the backplane sheet comprising a plurality of via holes that expose portions of the M1 layer beneath the backplane sheet; and an M2 layer in contact with the backplane sheet, the M2 layer made of a sheet of pre-fabricated metal foil material comprising a thickness of between 5-250 μm, the M2 layer electrically connected to the M1 layer through the via holes in the backplane sheet.

Abstract translation: 描述了一种背接触太阳能电池，其包括半导体光吸收层; 第一级金属层（M1），位于光吸收层背面的M1金属层，后侧与设计成接收入射光的光吸收层的前侧相反; 具有M1层的所述太阳能电池的背面电绝缘底板，所述背板片包括多个通孔，所述多个通孔使得所述M1层的背面板下方的部分露出; 以及与背板接触的M2层，M2层由包括5-250μm的厚度的预制金属箔材料制成，M2层通过导电孔中的通孔与M1层电连接 底板。

公开(公告)号：US20150056742A1

公开(公告)日：2015-02-26

申请号：US14265331

申请日：2014-04-29

Applicant: Solexel, Inc.

Inventor： Virendra V. Rana ,  Mehrdad M. Moslehi ,  Pawan Kapur ,  Benjamin Rattle ,  Heather Deshazer ,  Solene Coutant

IPC: H01L31/18 ,  H01L31/0236

CPC classification number: H01L31/0682 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/035281 ,  H01L31/0445 ,  H01L31/049 ,  H01L31/056 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/186 ,  H01L31/1864 ,  H01L31/1868 ,  H01L31/1896 ,  H01L33/0095 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Annealing solutions providing damage-free laser patterning utilizing auxiliary heating to anneal laser damaged ablation regions are provided herein. Ablation spots on an underlying semiconductor substrate are annealed during or after pulsed laser ablation patterning of overlying transparent passivation layers.

Abstract translation: 本文提供了使用辅助加热来退火激光损伤的烧蚀区域的提供无损伤激光图案的退火解决方案。 在覆盖的透明钝化层的脉冲激光烧蚀图案化期间或之后对底层半导体衬底上的消融点进行退火。

公开(公告)号：US20140370650A1

公开(公告)日：2014-12-18

申请号：US14179526

申请日：2014-02-12

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  Pawan Kapur ,  Karl-Josef Kramer ,  Michael Wingert

IPC: H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/18 ,  H01L27/1421 ,  H01L31/02245 ,  H01L31/0516 ,  Y02E10/50

Abstract: According to one aspect of the disclosed subject matter, a method for forming a monolithically isled back contact back junction solar cell using bulk wafers is provided. Emitter and base contact regions are formed on a backside of a semiconductor wafer having a light receiving frontside and a backside opposite said frontside. A first level contact metallization is formed on the wafer backside and an electrically insulating backplane is attached to the semiconductor wafer backside. Isolation trenches are formed in the semiconductor wafer patterning the semiconductor wafer into a plurality of electrically isolated isles and the semiconductor wafer is thinned. A metallization structure is formed on the electrically insulating backplane electrically connecting the plurality of isles.

Abstract translation: 根据所公开的主题的一个方面，提供了一种使用块状晶片形成单片背面接触背面太阳能电池的方法。 发射极和基极接触区形成在具有光接收前侧和与前侧相对的背面的半导体晶片的背面。 第一层接触金属化形成在晶片背面，并且电绝缘底板附着到半导体晶片背面。 在将半导体晶片图案化成多个电隔离岛的半导体晶片中形成隔离沟槽，并且半导体晶片变薄。 在电绝缘底板上形成电连接多个岛的金属化结构。

公开(公告)号：US08828784B2

公开(公告)日：2014-09-09

申请号：US13868987

申请日：2013-04-23

Applicant: Solexel, Inc.

Inventor： Swaroop Kommera ,  Pawan Kapur ,  Mehrdad M. Moslehi

IPC: H01L21/00

CPC classification number: H02S50/10 ,  G01R27/02 ,  H01L22/14 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/0682 ,  H02S50/00 ,  Y02E10/547

Abstract: Methods and structures for extracting at least one electric parametric value from a back contact solar cell having dual level metallization are provided.

Abstract translation: 提供了从具有双层金属化的背接触太阳能电池提取至少一个电参数值的方法和结构。

公开(公告)号：US20140147944A1

公开(公告)日：2014-05-29

申请号：US13868987

申请日：2013-04-23

Applicant: Solexel, Inc.

Inventor： Swaroop Kommera ,  Pawan Kapur ,  Mehrdad M. Moslehi

IPC: G01R31/40 ,  H01L31/0224 ,  H01L21/66 ,  G01R31/26

CPC classification number: H02S50/10 ,  G01R27/02 ,  H01L22/14 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/0682 ,  H02S50/00 ,  Y02E10/547

Abstract: Methods and structures for extracting at least one electric parametric value from a back contact solar cell having dual level metallization are provided.

Abstract translation: 提供了从具有双层金属化的背接触太阳能电池提取至少一个电参数值的方法和结构。

公开(公告)号：US09929288B2

公开(公告)日：2018-03-27

申请号：US14846537

申请日：2015-09-04

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Heather Deshazer ,  Pawan Kapur

IPC: H01L31/0224 ,  H01L31/18 ,  H01L27/142 ,  H01L31/05 ,  H01L31/068

CPC classification number: H01L31/022458 ,  H01L27/1421 ,  H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Fabrication methods and structures are provided for the formation of monolithically isled back contact back junction solar cells. In one embodiment, base and emitter contact metallization is formed on the backside of a back contact back junction solar cell substrate. A trench stop layer is formed on the backside of a back contact back junction solar cell substrate and is electrically isolated from the base and emitter contact metallization. The trench stop layer has a pattern for forming a plurality semiconductor regions. An electrically insulating layer is formed on the base and emitter contact metallization and the trench stop layer. A trench isolation pattern is formed through the back contact back junction solar cell substrate to the trench stop layer which partitions the semiconductor layer into a plurality of solar cell semiconductor regions on the electrically insulating layer.

公开(公告)号：US20170244360A1

公开(公告)日：2017-08-24

申请号：US15284475

申请日：2016-10-03

Applicant: Solexel, Inc.

Inventor： Swaroop Kommera ,  Pawan Kapur ,  Mehrdad M. Moslehi

IPC: H02S50/10 ,  H01L31/068 ,  G01R27/02 ,  H01L31/0224

CPC classification number: H02S50/10 ,  G01R27/02 ,  H01L22/14 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/0682 ,  H02S50/00 ,  Y02E10/547

Abstract: Methods and structures for extracting at least one electric parametric testing from a back contact solar cell are provided.

公开(公告)号：US20170104122A1

公开(公告)日：2017-04-13

申请号：US15131190

申请日：2016-04-18

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Pawan Kapur

IPC: H01L31/061 ,  H01L31/0445 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/0288 ,  H01L31/0236 ,  H01L31/028

CPC classification number: H01L31/1864 ,  H01L21/26586 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/0288 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/0445 ,  H01L31/061 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1868 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

Abstract: A back contact back junction thin-film solar cell is formed on a thin-film semiconductor solar cell. Preferably the thin film semiconductor material comprises crystalline silicon. Base regions, emitter regions, and front surface field regions are formed through ion implantation and annealing processes.