-
公开(公告)号：US20190342512A1
公开(公告)日：2019-11-07
申请号：US16511876
申请日：2019-07-15
Applicant: SONY CORPORATION
Inventor： Takashi Abe , Nobuo Nakamura , Tomoyuki Umeda , Keiji Mabuchi , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
Abstract: A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell includes two pixels. Upper and lower photoelectric converters and, transfer transistors and connected to the upper and lower photoelectric converters, respectively, a reset transistor, and an amplifying transistor form the two pixels. A full-face signal line is connected to the respective drains of the reset transistor and the amplifying transistor. Controlling the full-face signal line, along with transfer signal lines and a reset signal line, to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.
-
公开(公告)号：US10375335B2
公开(公告)日：2019-08-06
申请号：US16055509
申请日：2018-08-06
Applicant: SONY CORPORATION
Inventor： Keiji Mabuchi
Abstract: An imaging device includes a pixel region in which light sensing pixels are grouped into pixel-units that each include multiple pixels, each column including pixels from at least two of the pixel-units. Each of the pixel-units is connected, via a corresponding readout line, to a corresponding readout unit configured to perform analog-to-digital conversion on pixel signals output thereto. A scanning unit that extends in a column direction is configured to select pixels for readout by applying row scanning pulses to scan lines connected to rows. A scanning unit that extends in a row direction for applying readout-enabling scan pulses to lines connected to columns is omitted. Those pixels that are selected for readout by one of the row scanning pulses are read out independently of any enabling pulses applied to lines connected to columns.
-
公开(公告)号：US10263033B2
公开(公告)日：2019-04-16
申请号：US15858204
申请日：2017-12-29
Applicant: Sony Corporation
Inventor： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC: H01L27/146 , H01L23/544 , H01L31/0216 , H01L31/0232
Abstract: Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
-
44.发明申请公开(公告)号：US20180301499A1
公开(公告)日：2018-10-18
申请号：US16014129
申请日：2018-06-21
Applicant: Sony Corporation
Inventor： Keiji Mabuchi , Hideshi Abe , Hideo Kanbe , Shiro Uchida
IPC: H01L27/146 , G01J5/20 , G01J3/36 , G01J3/28 , H01L27/30
Abstract: A solid-state imaging device includes an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident from a back surface side is formed, and a lower substrate provided under the Si substrate and configured to photoelectrically convert infrared light incident from the back surface side.
-
公开(公告)号：US10044947B2
公开(公告)日：2018-08-07
申请号：US15152349
申请日：2016-05-11
Applicant: Sony Corporation
Inventor： Keiji Mabuchi
Abstract: An electronic apparatus includes: a pixel array section in which pixels including photoelectric conversion sections that generate signal charges corresponding to amounts of light, charge accumulation sections that receive the signal charges from the corresponding photoelectric conversion sections and that are shared thereby, and pixel transistors that read out the signal charges generated by the corresponding photoelectric conversion sections and that are shared thereby are two-dimensionally arranged in a matrix; a solid-state image capture device including a scanner that can drive the pixels so that exposure periods of all of the pixels are simultaneously started, that can drive the pixels so that the exposure periods of all of the pixels are simultaneously ended, and that sequentially selects and scans the pixels in readout periods; and a mechanical shutter that determines an end of the exposure periods for still-image shooting.
-
Patent Agency Ranking
公开(公告)号：US09924080B2
公开(公告)日：2018-03-20
申请号：US14908290
申请日：2014-07-22
Applicant: SONY CORPORATION
Inventor： Keiji Mabuchi
CPC classification number: H04N5/2253 , H03M1/123 , H03M1/144 , H03M1/56 , H04N5/37457 , H04N5/3765 , H04N5/378
Abstract: The present technology relates to a conversion apparatus, an imaging apparatus, an electronic apparatus, and a conversion method that are capable of reducing the scale of a circuit.The conversion apparatus includes: a comparison unit that compares an input voltage of an input signal and a ramp voltage of a ramp signal that varies with time; and a storage unit that holds a code value when a comparison result from the comparison unit is inverted, the holding of the code value by the storage unit being repeated a plurality of times, to generate a digital signal having a predetermined bit number. The predetermined bit number is divided into high-order bits and low-order bits, the low-order bits are acquired earlier than the high-order bits, and the acquired low-order bits and the high-order bits are combined with each other, to generate the digital signal having the predetermined bit number. The present technology can be applied to a portion of an image sensor, in which AD conversion is performed.
-
47.发明授权公开(公告)号：US09866771B2
公开(公告)日：2018-01-09
申请号：US15432565
申请日：2017-02-14
Applicant: Sony Corporation
Inventor： Keiji Mabuchi
IPC: H04N5/374 , H04N5/378 , H04N5/232 , H04N5/372 , H01L27/146 , H04N5/355 , H04N5/357 , H04N5/363 , H04N5/365 , H04N5/376
CPC classification number: H04N5/35563 , H01L27/14607 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H04N5/23229 , H04N5/3575 , H04N5/363 , H04N5/365 , H04N5/37213 , H04N5/3742 , H04N5/3765 , H04N5/378
Abstract: A solid-state imaging device includes a pixel array section and a signal processing section. The pixel array section is configured to include a plurality of arranged rectangular pixels, each of which has different sizes in the vertical and horizontal directions, and a plurality of adjacent ones of which are combined to form a square pixel having the same size in the vertical and horizontal directions. The signal processing section is configured to perform a process of outputting, as a single signal, a plurality of signals read out from the combined plurality of rectangular pixels.
-
公开(公告)号：US09865633B2
公开(公告)日：2018-01-09
申请号：US14619587
申请日：2015-02-11
Applicant: Sony Corporation
Inventor： Keiji Mabuchi , Toshifumi Wakano , Ken Koseki
IPC: H04N5/378 , H01L27/146 , H04N5/365 , H04N5/357 , H04N5/3745 , H04N5/374
CPC classification number: H01L27/14612 , H01L27/14643 , H04N5/357 , H04N5/3658 , H04N5/3741 , H04N5/3742 , H04N5/3745 , H04N5/37455 , H04N5/37457 , H04N5/378
Abstract: A solid-state imaging device in which the potential of a signal line, which is obtained before a pixel has an operating period, is fixed to an intermediate potential between a first power-supply potential and a second power-supply potential.
-
公开(公告)号：US09832405B2
公开(公告)日：2017-11-28
申请号：US15160575
申请日：2016-05-20
Applicant: SONY CORPORATION
Inventor： Takashi Abe , Nobuo Nakamura , Tomoyuki Umeda , Keiji Mabuchi , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
CPC classification number: H04N5/374 , H04N3/155 , H04N5/335 , H04N5/3741 , H04N5/37457 , H04N5/3765 , H04N5/378 , H04N9/045
Abstract: A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell includes two pixels. Upper and lower photoelectric converters and, transfer transistors and connected to the upper and lower photoelectric converters, respectively, a reset transistor, and an amplifying transistor form the two pixels. A full-face signal line is connected to the respective drains of the reset transistor and the amplifying transistor. Controlling the full-face signal line, along with transfer signal lines and a reset signal line, to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.
-
公开(公告)号：US09831284B2
公开(公告)日：2017-11-28
申请号：US15054677
申请日：2016-02-26
Applicant: Sony Corporation
Inventor： Keiji Mabuchi , Hideshi Abe , Hideo Kanbe , Shiro Uchida
IPC: H01L27/146 , G01J5/20 , G01J3/28 , G01J3/36
CPC classification number: H01L27/14652 , G01J3/2803 , G01J3/36 , G01J5/20 , H01L27/14609 , H01L27/14612 , H01L27/14621 , H01L27/14625 , H01L27/14636 , H01L27/1464 , H01L27/14647 , H01L27/14649 , H01L27/14683 , H01L27/14687 , H01L27/1469 , H01L27/30 , H01L27/307
Abstract: A solid-state imaging device includes an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident from a back surface side is formed, and a lower substrate provided under the Si substrate and configured to photoelectrically convert infrared light incident from the back surface side.
-
-
-
-
-
-
-
-
-
Search Results
167
records
(took 0.02 seconds)
