公开(公告)号：US09806253B2

公开(公告)日：2017-10-31

申请号：US15066721

申请日：2016-03-10

Applicant: Samsung Electronics Co., LTD.

Inventor： Dmytro Apalkov ,  Dustin William Erickson ,  Vladimir Nikitin

IPC: H01L43/00 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02 ,  H01L43/10 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A method for providing a magnetic junction usable in a magnetic device and the magnetic junction are described. The method includes providing a free layer, a pinned layer and a nonmagnetic spacer layer between the free layer and the pinned layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. At least one of the steps of providing the free layer and providing the pinned layer includes providing magnetic and sacrificial layers and performing two anneals of the sacrificial and magnetic layers. The magnetic layer includes a glass-promoting component and is amorphous as-deposited. The first anneal is at a first temperature exceeding 300 degrees Celsius and not exceeding 450 degrees Celsius. The second anneal is at a second temperature greater than the first temperature and performed after the first anneal. The sacrificial layer is removed.

公开(公告)号：US20170149387A1

公开(公告)日：2017-05-25

申请号：US15067009

申请日：2016-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dmytro Apalkov ,  Roman Chepulskyy ,  Vladimir Nikitin

IPC: H03B15/00

CPC classification number: H03B15/006 ,  G11C11/16 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10

Abstract: A spin-torque oscillator includes: a driving reference layer having a fixed magnetization; a nonmagnetic spacer layer; and a free layer having a changeable magnetization exhibiting an easy-cone magnetic anisotropy, the nonmagnetic spacer layer being between the driving reference layer and the free layer, a magnetic anisotropy energy of the free layer having a local maximum along an axis, a local minimum at an angle from the axis, and a global maximum different from the local maximum, the angle being greater than zero degrees, wherein the spin-torque oscillator is configured such that the changeable magnetization of the free layer precesses around the axis.

公开(公告)号：US09608039B1

公开(公告)日：2017-03-28

申请号：US15060592

申请日：2016-03-03

Applicant: Samsung Electronics Co., LTD.

Inventor： Dmytro Apalkov ,  Vladimir Nikitin

IPC: H01L27/22 ,  G11C11/16 ,  H01L43/12

CPC classification number: H01L27/228 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01L43/08

Abstract: A magnetic memory including a plurality of magnetic junctions and at least one spin-orbit interaction (SO) active layer is described. Each of the magnetic junctions includes a reference layer, a free layer and a nonmagnetic spacer layer between reference and free layers. The magnetic junction includes a biasing structure for providing a magnetic bias in a first direction and/or the free layer has a length in the first direction and a width in a second direction. The width is less than the length. The SO active layer(s) are adjacent to the free layer and carry a current in a third direction. The third direction is at a nonzero acute angle from the first direction. The SO active layer(s) exerts a SO torque on the free layer due to the current passing through the at least one SO active layer. The free layer is switchable using the SO torque.

公开(公告)号：US09384811B2

公开(公告)日：2016-07-05

申请号：US14559536

申请日：2014-12-03

Applicant: Samsung Electronics Co., LTD.

Inventor： Dmytro Apalkov ,  Roman Chepulskyy

IPC: G11C11/15 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08

CPC classification number: G11C11/161 ,  G11C11/1675 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetic device usable in electronic devices is described. The magnetic device includes a magnetic junction and at least one smart thermal barrier that is thermally coupled with the magnetic junction. The magnetic junction includes at least one reference layer, at least one nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer(s) are between the reference layer(s) and the free layer. The free layer is switchable between stable magnetic states when a write current passed through the magnetic junction. The smart thermal barrier has a low heat conductance below a transition temperature range, and a high heat conductance above the transition temperature range.

Abstract translation: 描述可用于电子设备的磁性装置。 磁性装置包括磁结和至少一个与磁结热耦合的智能热障。 磁结包括至少一个参考层，至少一个非磁性间隔层和自由层。 非磁性间隔层位于参考层和自由层之间。 当写入电流通过磁性结时，自由层可在稳定的磁状态之间切换。 智能隔热板具有低于过渡温度范围的低导热系数，高于过渡温度范围的高导热系数。

公开(公告)号：US09130155B2

公开(公告)日：2015-09-08

申请号：US14048329

申请日：2013-10-08

Applicant: Samsung Electronics Co., LTD.

Inventor： Roman Chepulskyy ,  Xueti Tang ,  Dmytro Apalkov ,  Alexey Vasilyevitch Khvalkovskiy ,  Vladimir Nikitin ,  Mohamad Towfik Krounbi

IPC: H01L43/08 ,  G11C11/16 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L43/10 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/18 ,  G11C11/5607 ,  H01L43/08 ,  H01L43/12

Abstract: A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. A portion of the magnetic junction includes at least one magnetic substructure. The magnetic substructure includes at least one Fe layer and at least one nonmagnetic insertion layer. The at least one Fe layer shares at least one interface with the at least one nonmagnetic insertion layer. Each of the at least one nonmagnetic insertion layer consists of at least one of W, I, Hf, Bi, Zn, Mo, Ag, Cd, Os and In.

Abstract translation: 描述了一种用于提供可用于磁性装置中的磁结的方法和系统。 磁结包括参考层，非磁性间隔层和自由层。 非磁性间隔层位于参考层和自由层之间。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。 磁结的一部分包括至少一个磁性子结构。 磁性亚结构包括至少一个Fe层和至少一个非磁性插入层。 所述至少一个Fe层与所述至少一个非磁性插入层共享至少一个界面。 所述至少一个非磁性插入层中的每一个由W，I，Hf，Bi，Zn，Mo，Ag，Cd，Os和In中的至少一种构成。

公开(公告)号：US09105830B2

公开(公告)日：2015-08-11

申请号：US13851591

申请日：2013-03-27

Applicant: Samsung Electronics Co., LTD.

Inventor： Alexey Vasilyevitch Khvalkovskiy ,  Dmytro Apalkov ,  Mohamad Towfik Krounbi

IPC: G11C11/00 ,  H01L43/02 ,  H01L43/12 ,  G11C11/16 ,  H01L43/08 ,  H01F10/32 ,  H01F41/32 ,  H01L27/22

CPC classification number: H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/18 ,  H01F10/3263 ,  H01F10/3286 ,  H01F10/329 ,  H01F41/325 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic memory is described. The magnetic memory includes dual magnetic junctions and spin-orbit interaction (SO) active layer(s). Each dual magnetic junction includes first and second reference layers, first and second nonmagnetic spacer layers and a free layer. The free layer is magnetic and between the nonmagnetic spacer layers. The nonmagnetic spacer layers are between the corresponding reference layers and the free layer. The SO active layer(s) are adjacent to the first reference layer of each dual magnetic junction. The SO active layer(s) exert a SO torque on the first reference layer due to a current passing through the SO active layer(s) substantially perpendicular to a direction between the SO active layer(s) and the first reference layer. The first reference layer has a magnetic moment changeable by at least the SO torque. The free layer is switchable using a spin transfer write current driven through the dual magnetic junction.

Abstract translation: 描述磁存储器。 磁存储器包括双重磁共轭和自旋轨道相互作用（SO）活性层。 每个双磁性结包括第一和第二参考层，第一和第二非磁性间隔层和自由层。 自由层是磁性的并且在非磁性间隔层之间。 非磁性间隔层位于相应的参考层和自由层之间。 SO活性层与每个双磁性结的第一参考层相邻。 SO活性层由于电流通过基本上垂直于SO活性层和第一参考层之间的方向的SO活性层而在第一参考层上施加SO转矩。 第一参考层具有可通过至少SO转矩改变的磁矩。 自由层可以使用通过双磁性结驱动的自旋转移写入电流进行切换。

公开(公告)号：US20150041934A1

公开(公告)日：2015-02-12

申请号：US14097492

申请日：2013-12-05

Applicant: Samsung Electronics Co., LTD.

Inventor： Alexey Vasilyevitch Khvalkovskiy ,  Dmytro Apalkov ,  Vladimir Nikitin ,  Mohamad Towfik Krounbi

IPC: H01L43/02

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/18 ,  H01L27/224 ,  H01L43/08

Abstract: A magnetic memory is described. In one aspect, the magnetic memory includes magnetic junctions and at least one semi-spin valve (SSV) line adjacent to the magnetic junctions. Each magnetic junction includes a magnetic free layer. The SSV line(s) include a ferromagnetic layer and a nonmagnetic layer between the ferromagnetic layer and the magnetic junctions. The SSV line(s) are configured to exert a spin accumulation induced torque on at least a portion of the magnetic junctions due to an accumulation of spin polarized current carriers from a current that is substantially in-plane. The free layer is configured to be written using at least the spin accumulation induced torque. In another aspect, the magnetic memory includes magnetic memory cells and at least one spin torque (ST) line that is analogous to the SSV line. Each magnetic memory cell includes magnetic junction(s) analogous to those above and magnetoelectric selection device(s).

Abstract translation: 描述磁存储器。 在一个方面，磁存储器包括磁结和至少一个与磁结相邻的半自旋阀（SSV）线。 每个磁结都包括无磁层。 SSV线包括在铁磁层和磁结之间的铁磁层和非磁性层。 SSV线被配置为由于自旋极化电流载流子从基本上在平面内的电流的积累而在至少一部分磁结上施加自旋累积诱导转矩。 自由层被配置为使用至少自旋累积诱导扭矩来写入。 在另一方面，磁存储器包括磁存储器单元和类似于SSV线的至少一个自旋转矩（ST）线。 每个磁存储单元包括与上述类似的磁结和磁电选择装置。

公开(公告)号：US08780665B2

公开(公告)日：2014-07-15

申请号：US13739959

申请日：2013-01-11

Applicant: Samsung Electronics Co., Ltd. ,  The Board of Trustees of the University of Alabama for and on Behalf of the University of Alabama

Inventor： Dmytro Apalkov ,  William H. Butler

IPC: G11C11/06 ,  H01L43/02 ,  H01L43/08 ,  B82Y25/00 ,  H01F10/32

CPC classification number: H01L43/02 ,  B82Y25/00 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295 ,  H01L43/08

Abstract: A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer has a magnetic anisotropy, at least a portion of which is a biaxial anisotropy. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

Abstract translation: 描述了一种用于提供可用于磁性装置中的磁结的方法和系统。 磁结包括钉扎层，非磁性间隔层和自由层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层具有磁各向异性，其至少一部分是双轴各向异性的。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

公开(公告)号：US11925124B2

公开(公告)日：2024-03-05

申请号：US17217766

申请日：2021-03-30

Applicant: Samsung Electronics Co., Ltd. ,  INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Jaewoo Jeong ,  Panagiotis Charilaos Filippou ,  Yari Ferrante ,  Chirag Garg ,  Mahesh Samant ,  Ikhtiar ,  Dmytro Apalkov

IPC: H10N50/80 ,  G11C11/16 ,  H01F10/193 ,  H01F10/30 ,  H01F10/32 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10 ,  H10N50/85

CPC classification number: H10N50/80 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/30 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10 ,  H10N50/85 ,  H01F10/3254 ,  H01F10/3268

Abstract: A magnetic structure, a magnetic device incorporating the magnetic structure and a method for providing the magnetic structure are described. The magnetic structure includes a magnetic layer, a templating structure and a resistive insertion layer. The magnetic layer includes a Heusler compound and has a perpendicular magnetic anisotropy energy exceeding an out-of-plane demagnetization energy. The templating structure has a crystal structure configured to template at least one of the Heusler compound and the resistive insertion layer. The magnetic layer is on the templating structure. The resistive insertion layer is configured to reduce magnetic damping for the Heusler compound and allow for templating of the Heusler compound.

公开(公告)号：US20220223783A1

公开(公告)日：2022-07-14

申请号：US17217766

申请日：2021-03-30

Applicant: Samsung Electronics Co., Ltd. ,  INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Jaewoo Jeong ,  Panagiotis Charilaos Filippou ,  Yari Ferrante ,  Chirag Garg ,  Mahesh Samant ,  Ikhtiar ,  Dmytro Apalkov

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic structure, a magnetic device incorporating the magnetic structure and a method for providing the magnetic structure are described. The magnetic structure includes a magnetic layer, a templating structure and a resistive insertion layer. The magnetic layer includes a Heusler compound and has a perpendicular magnetic anisotropy energy exceeding an out-of-plane demagnetization energy. The templating structure has a crystal structure configured to template at least one of the Heusler compound and the resistive insertion layer. The magnetic layer is on the templating structure. The resistive insertion layer is configured to reduce magnetic damping for the Heusler compound and allow for templating of the Heusler compound.