公开(公告)号：US20180094190A1

公开(公告)日：2018-04-05

申请号：US15830134

申请日：2017-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunki Kim ,  Shin Ae Jun ,  Eun Joo Jang ,  Yongwook Kim ,  Tae Gon Kim ,  Yuho Won ,  Taekhoon Kim ,  Hyo Sook Jang

IPC: C09K11/88 ,  C09K11/72 ,  H01L29/06 ,  H01L29/22

CPC classification number: C09K11/883 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C09K11/025 ,  C09K11/565 ,  C09K11/61 ,  C09K11/612 ,  C09K11/70 ,  C09K11/705 ,  C09K11/72 ,  C09K11/722 ,  C09K11/88 ,  H01L29/0665 ,  H01L29/22 ,  H01L33/502 ,  Y10S977/774 ,  Y10S977/818 ,  Y10S977/824 ,  Y10S977/825 ,  Y10S977/892 ,  Y10S977/896 ,  Y10S977/95

Abstract: A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide

公开(公告)号：US09834724B2

公开(公告)日：2017-12-05

申请号：US14494673

申请日：2014-09-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunki Kim ,  Shin Ae Jun ,  Eun Joo Jang ,  Yongwook Kim ,  Tae Gon Kim ,  Yuho Won ,  Taekhoon Kim ,  Hyo Sook Jang

IPC: C09K11/70 ,  C09K11/61 ,  C09K11/88 ,  C09K11/02 ,  C09K11/56 ,  B82Y40/00 ,  B82Y20/00

CPC classification number: C09K11/883 ,  B82Y20/00 ,  B82Y40/00 ,  C09K11/025 ,  C09K11/565 ,  C09K11/61 ,  C09K11/612 ,  C09K11/70 ,  C09K11/705 ,  C09K11/88 ,  Y10S977/774 ,  Y10S977/892 ,  Y10S977/95

Abstract: A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide.

公开(公告)号：US12187941B2

公开(公告)日：2025-01-07

申请号：US17866983

申请日：2022-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho Won ,  Yong Wook Kim ,  Eun Joo Jang ,  Hyo Sook Jang

IPC: C09K11/88 ,  C09K11/54 ,  C09K11/56 ,  H01L33/06 ,  H01L33/28

Abstract: A quantum dot having a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium, and a semiconductor nanocrystal shell disposed on the surface of the core, the shell including zinc, selenium, and sulfur. The quantum dot is configured to emit green light, the quantum dot does not include cadmium, and the quantum dot has a mole ratio Te:Se of tellurium relative to selenium of greater than about 0.05 and less than or equal to about 0.5:1. A method of producing the quantum dot and an electronic device including the same.

公开(公告)号：US12146091B2

公开(公告)日：2024-11-19

申请号：US18297755

申请日：2023-04-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo Kim ,  Eun Joo Jang ,  Hyo Sook Jang ,  Hwea Yoon Kim ,  Yuho Won

IPC: C09K11/88 ,  B82Y20/00 ,  B82Y40/00 ,  C01B19/00 ,  C09K11/56 ,  C09K11/62 ,  H10K50/115

Abstract: A quantum dot according to an embodiment includes a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium and a semiconductor nanocrystal shell on the core, the semiconductor nanocrystal shell including a zinc chalcogenide, wherein the quantum dot does not include cadmium, the zinc chalcogenide includes zinc and selenium, the quantum dot further includes gallium and a primary amine having 5 or more carbon atoms, and the quantum dot is configured to emit light having a maximum emission peak in a range of greater than about 450 nanometers (nm) and less than or equal to about 480 nm by excitation light. A method of producing the quantum dot and an electronic device including the same are also disclosed.

公开(公告)号：US11935984B2

公开(公告)日：2024-03-19

申请号：US18065910

申请日：2022-12-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Seok Han ,  Sung Woo Kim ,  Jin A Kim ,  Tae Hyung Kim ,  Kun Su Park ,  Yuho Won ,  Jeong Hee Lee ,  Eun Joo Jang ,  Hyo Sook Jang

IPC: H01L33/06 ,  C01B19/04 ,  C09K11/88 ,  H01L33/20 ,  H01L33/26

CPC classification number: H01L33/06 ,  C01B19/04 ,  C09K11/88 ,  H01L33/20 ,  H01L33/26

Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.

公开(公告)号：US11834597B2

公开(公告)日：2023-12-05

申请号：US17532439

申请日：2021-11-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong Hee Lee ,  Hyun A Kang ,  Sung Woo Kim ,  Jin A Kim ,  Tae Hyung Kim ,  Yuho Won ,  Eun Joo Jang

IPC: H10K50/115 ,  C09K11/88 ,  C09K11/02 ,  C01B19/00 ,  B82Y20/00 ,  B82Y40/00 ,  B82Y30/00

CPC classification number: C09K11/883 ,  C01B19/007 ,  C09K11/02 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01P2004/64 ,  H10K50/115

Abstract: A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent:

RCONHR  Chemical Formula 1



wherein each R is as defined herein;
heating the organic ligand mixture in an inert atmosphere at a first temperature to obtain a heated organic ligand mixture;
adding a zinc precursor, a selenium precursor, and optionally a tellurium precursor to the heated organic ligand mixture to obtain a reaction mixture, wherein the zinc precursor does not comprise oxygen; and
heating the reaction mixture at a first reaction temperature to synthesize a first semiconductor nanocrystal particle.

公开(公告)号：US11781063B2

公开(公告)日：2023-10-10

申请号：US17726702

申请日：2022-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo Sook Jang ,  Yuho Won ,  Sungwoo Hwang ,  Ji Yeong Kim ,  Eun Joo Jang

IPC: H01L51/52 ,  C09K11/08 ,  C08L57/10 ,  G02F1/13357 ,  C09D133/00 ,  C08F220/06 ,  C09D133/02 ,  H10K50/115 ,  H10K59/38 ,  B82Y20/00 ,  B82Y40/00 ,  G02F1/1335

CPC classification number: C09K11/0883 ,  C08F220/06 ,  C08L57/10 ,  C09D133/00 ,  C09D133/02 ,  G02F1/133617 ,  H10K50/115 ,  H10K59/38 ,  B82Y20/00 ,  B82Y40/00 ,  C08L2203/20 ,  G02F1/133614 ,  G02F2202/022 ,  G02F2202/102 ,  G02F2202/36 ,  G02F2203/20 ,  C08F220/06 ,  C08F220/20 ,  C08F220/1807

Abstract: A cadmium free quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core, wherein the quantum dot does not include cadmium and includes indium and zinc, the quantum dot has a maximum photoluminescence peak in a red light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than or equal to about 40 nanometers (nm), an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot includes a valley between about 450 nm to a center wavelength of a first absorption peak, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.2, a quantum dot polymer composite including the same, and a display device including the quantum dot-polymer composite:

(Absfirst−Absvalley)/Absfirst=VD.

公开(公告)号：US11591518B2

公开(公告)日：2023-02-28

申请号：US17187926

申请日：2021-03-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho Won ,  Sung Woo Kim ,  Jin A Kim ,  Jeong Hee Lee ,  Tae Hyung Kim ,  Eun Joo Jang

IPC: C09K11/88 ,  H01L51/50 ,  H05B33/14 ,  B82Y20/00 ,  C09K11/02 ,  B82Y40/00

Abstract: A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.

公开(公告)号：US11569468B2

公开(公告)日：2023-01-31

申请号：US17193283

申请日：2021-03-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin A Kim ,  Yuho Won ,  Sung Woo Kim ,  Tae Hyung Kim ,  Jeong Hee Lee ,  Eun Joo Jang

IPC: H01L51/50

Abstract: Quantum dots and electroluminescent devices including the same, wherein the quantum dots include a core including a first semiconductor nanocrystal including a zinc chalcogenide; and a shell disposed on the core, the shell including zinc, sulfur, and selenium, wherein the quantum dots have an average particle size of greater than 10 nm, wherein the quantum dots do not include cadmium, and wherein a photoluminescent peak of the quantum dots is present in a wavelength range of greater than or equal to about 430 nm and less than or equal to about 470 nm.

公开(公告)号：US11505740B2

公开(公告)日：2022-11-22

申请号：US17490552

申请日：2021-09-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho Won ,  Nayoun Won ,  Sungwoo Hwang ,  Eun Joo Jang ,  Soo Kyung Kwon ,  Yong Wook Kim ,  Jihyun Min ,  Garam Park ,  Shang Hyeun Park ,  Hyo Sook Jang ,  Shin Ae Jun ,  Yong Seok Han

IPC: H01L51/50 ,  C09K11/08 ,  C08L57/10 ,  G02F1/13357 ,  H01L27/32 ,  C09K11/02 ,  C09K11/56 ,  C09K11/70 ,  C09K11/88 ,  H05B33/14 ,  B82Y40/00 ,  B82Y20/00 ,  G02F1/1335

Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.