摘要:
A vehicle light can include an optical system for controlling a light distribution pattern, and the optical system is a light guide (being a lens body having an inner reflecting surface). The vehicle light can project illumination light with a low bean light distribution pattern. The vehicle light can include an LED light source and a lens body serving as a light guide. The lens body can include a light incident surface, a reflecting surface, and a light exiting surface. The LED light source can have a rearmost end light emitting point from which light beams are emitted to form a bright-dark boundary line. Among the light beams, perpendicularly incident light beams not subjected to refraction can be projected toward the bright-dark boundary line while obliquely incident light beams being subjected to refraction can be corrected to be directed in a lower angular direction than the bright-dark boundary line to be mixed with the other light beams emitted from other light emitting points of the LED light source, thereby preventing the color shading of illumination light.
摘要:
In a region of a weak internal electric field, photocharges generated in a region deeper than the photodiode are diffused laterally to lower the sensitivity by photoelectrons flowing into adjacent pixels, etc (crosstalk). An anti-crosstalk layer is disposed in the photodiode forming portion, and between a pixel region and a peripheral circuit region. Crosstalk between a pixel and a pixel or between a pixel region and a peripheral circuit region is decreased to improve the photosensitivity.
摘要:
An object is to obtain a high-efficiency photoelectric conversion device having a crystalline silicon i-layer in a photoelectric conversion layer. Disclosed is a fabrication method for a photoelectric conversion device that includes a step of forming, on a substrate, a photoelectric conversion layer having an i-layer formed mainly of crystalline silicon. The method includes the steps of determining an upper limit of an impurity concentration in the i-layer according to the Raman ratio of the i-layer; and forming the i-layer so as to have a value equal to or less than the determined upper limit of the impurity concentration. Alternatively, an upper limit of impurity-gas concentration in a film-formation atmosphere is determined according to the Raman ratio of the i-layer, and the i-layer is formed while controlling the impurity-gas concentration so as to have a value equal to or less than the determined upper limit.
摘要:
An ultrasonic motor which exhibits stable performances by suppressing irregularities of magnitudes of two standing waves excited by a piezoelectric element is provided. The ultrasonic motor is provided with a piezoelectric element which includes: a plurality of divided electrodes which are mounted on one surface and are equidistantly arranged in the circumferential direction; an inner peripheral electrode which is arranged on an inner peripheral side of the divided electrodes; an outer peripheral electrode which is arranged on an outer peripheral side of the divided electrodes; a plurality of inner peripheral short-circuiting electrodes which are mounted on every other divided electrode out of the divided electrodes and on the inner peripheral electrode so as to make every other divided electrode short-circuited with the inner peripheral electrode in the radial direction of the piezoelectric element; a plurality of outer peripheral short-circuiting electrodes which are mounted on the divided electrodes which are not short-circuited with the inner peripheral electrodes out of the divided electrodes and on the outer peripheral electrode so as to make the divided electrodes which are not short-circuited with the inner peripheral electrode short-circuited with the outer peripheral electrode in the radial direction of the piezoelectric element.
摘要:
A calculation unit calculates a magnitude of acceleration in at least one of three separate directions and calculates a synthesized value indicating the magnitudes of the accelerations in the three directions based on the calculated magnitude of the acceleration and the acceleration in the direction separate from at least one of the directions.
摘要:
Provided is a photoelectric conversion device fabrication method that realizes both high productivity and high conversion efficiency by rapidly forming an n-layer having good coverage. The fabrication method for a photoelectric conversion device includes a step of forming a silicon photoelectric conversion layer on a substrate by a plasma CVD method. In the fabrication method for the photoelectric conversion device, the step of forming the photoelectric conversion layer includes a step of forming an i-layer formed of crystalline silicon and a step of forming, on the i-layer, an n-layer under a condition with a hydrogen dilution ratio of 0 to 10, inclusive.
摘要:
In a solid-state image sensor device, the efficiency of light collection to a light-receiving region of a photodiode PD through a microlens is enhanced by arranging a wiring line configuration. Each of the first metal layer and the second metal layer is arranged to have a ring-like portion formed along a profile of the light-receiving region of the photodiode PD in a fashion that an upper position over the photodiode PD is surrounded by the first and second metal layers and a third metal layer.
摘要:
Objects are to reduce the burden on an operator and to improve fabrication efficiency. A transparent conductive film or a transparent optical film formed on a substrate W is irradiated with line illumination light by means of a line illumination device 3, line reflected light reflected at the transparent conductive film or the transparent optical film is detected with a camera, a color evaluation value of the detected reflected light is measured, and a film thickness corresponding to the measured color evaluation value is obtained using a film-thickness characteristic in which the color evaluation value is associated with the film thickness.
摘要:
The invention provides a crystalline polyamide-type resin composition comprises (a) a crystalline polyamide resin composition comprising (i) 50 to 90% by weight of crystalline polyamide resin (A) having a relative viscosity in 96% sulfuric acid of not less than 3.5 and (ii) 50 to 10% by weight of a crystalline polyamide resin (B) having a melting point lower than the melting point of polyamide resin (A) by 20° C. or more and a relative viscosity dissolved in 96% sulfuric acid of not more than 3.6, and (b) 1 to 10 part(s) by weight of a modified polyolefin resin (C) having a reactive functional group being able to react with the terminal group and/or main-chain amide group of the polyamide resin. The invention also provides a door checker for automobiles prepared from the crystalline polyamide-type resin composition.
摘要:
According to the present invention, an oxide film with the film quality almost equivalent to that of the thermal oxide can be formed by the low-temperature treatment. After removing an insulator on the active region of the substrate which constitutes a semiconductor wafer, an insulator made of, for example, silicon oxide is deposited on the main surface of the semiconductor wafer by the low pressure CVD method. This insulator is a film to form a gate insulator of MISFET in a later step. Subsequently, a plasma treatment is performed in an atmosphere containing oxygen (oxygen plasma treatment) to the insulator in the manner as schematically shown by the arrows. By so doing, the film quality of the insulator formed by the CVD method can be improved to the extent almost equivalent to that of the insulator formed of the thermal oxide.