公开(公告)号：US4148051A

公开(公告)日：1979-04-03

申请号：US874939

申请日：1978-02-03

申请人： Norio Koike ,  Iwao Takemoto ,  Masaharu Kubo

发明人： Norio Koike ,  Iwao Takemoto ,  Masaharu Kubo

IPC分类号： H01L21/8234 ,  H01L27/146 ,  H01L31/113 ,  H04N5/335 ,  H04N5/369 ,  H04N5/374 ,  H01L27/14

CPC分类号： H01L31/1136 ,  H01L21/823406 ,  H01L27/14643 ,  H01L27/14645

摘要： In a solid-state imaging device wherein at least one pn-junction photodiode and photo-signal detecting means adjacent thereto are disposed in a surface portion of a semiconductor substrate of one conductivity type, a solid-state imaging device characterized in that at least one window region is disposed within a semiconductor region which constitutes said photodiode and which has the opposite conductivity type to that of said semiconductor substrate, said window region "hollowing" said semiconductor region up to the surface of said semiconductor substrate and being made of a part of said semiconductor substrate.

摘要翻译： 在其中至少一个pn结光电二极管和与其相邻的光信号检测装置设置在一种导电类型的半导体衬底的表面部分中的固态成像装置中，其特征在于至少一个 窗口区域设置在构成所述光电二极管并且具有与所述半导体衬底的导电类型相反的导电类型的半导体区域内，所述窗口区域“中空”所述半导体区域直到所述半导体衬底的表面，并且由所述半导体区域的一部分 所述半导体衬底。

公开(公告)号：US20080001727A1

公开(公告)日：2008-01-03

申请号：US11666340

申请日：2005-11-14

申请人： Ken Ohsumi ,  Masaaki Fukuhara ,  Tatsuhiko Monji ,  Norio Koike

发明人： Ken Ohsumi ,  Masaaki Fukuhara ,  Tatsuhiko Monji ,  Norio Koike

IPC分类号： B60Q1/00

CPC分类号： H04N13/239 ,  B60R11/04 ,  B60R2011/0003 ,  G01S11/12 ,  G03B11/045 ,  G03B35/08 ,  H04N5/2253

摘要： According to a conventional technique, first, the positional relation between a lens and an imaging element is kept at each of left and right camera units, adjustment is made so as to eliminate the rotation-direction deviation of an imaging element from one surface of a member to which a lens and an imaging element are to be attached before fixing, and then that camera unit is attached to a reference member to thereby constitute a stereo camera. However, although this method can eliminate a mounting position deviation when left and right camera units only are taken into consideration, a problem is posed that deviation again occurs due to poor machining precision and assembly precision at the mounting surface between a camera unit and a member when a camera unit is mounted to a stay. According to this invention, mounting surfaces for mounting left and right imaging elements to a stay are provided to directly position left and right imaging elements to the stay, whereby built-up tolerance between components is reduced and the positional mounting precision between imaging elements is improved.

摘要翻译： 根据现有的技术，首先，在左右相机单元中保持透镜与摄像元件之间的位置关系，进行调整，以消除摄像元件的一面的旋转方向偏差 在固定之前要将透镜和成像元件附接到的构件，然后该相机单元附接到参考构件，从而构成立体摄像机。 然而，虽然这种方法可以消除仅考虑左右相机单元时的安装位置偏差，但是存在由于相机单元和构件之间的安装表面处的加工精度差和组装精度差而再次发生偏差的问题 当相机单元安装到停留时。 根据本发明，用于将左和右成像元件安装到支撑件的安装表面被设置成将左和右成像元件直接定位到支柱，由此减小了部件之间的建立公差，并且改善了成像元件之间的位置安装精度 。

公开(公告)号：US06541285B2

公开(公告)日：2003-04-01

申请号：US09878839

申请日：2001-06-11

申请人： Norio Koike

发明人： Norio Koike

IPC分类号： G01R3126

CPC分类号： G01R31/287 ,  H01L22/20

摘要： A hot carrier lifetime of a MOS transistor is estimated depending on a hot carrier lifetime model expressed as t·∝Isub−m·Idm−2 where t is a lifetime, Isub is a substrate current, Id is a drain current, and m is a fitting parameter. When hot carrier degradation of the MOS transistor is simulated, a parameter Age representing cumulative stress quantity with respect to the MOS transistor is calculated by a model formula expressed as Age∝∫[Isubm·Id2−m]dt where t is time. As a result, a lifetime under a condition to cause maximum hot carrier degradation is estimated accurately, and a lifetime in actual use can be estimated accurately. Moreover, a hot carrier lifetime parameter can be calculated in a short time with small numbers of transistors.

摘要翻译： MOS晶体管的热载流子寿命取决于表示为t.propIsub-m.Idm-2的热载流子寿命模型，其中t为寿命，Isub为衬底电流，Id为漏极电流，m为 拟合参数。 当模拟MOS晶体管的热载流子劣化时，通过表示为Ageprop∫[Isubm.Id2-m] dt的模型公式计算表示相对于MOS晶体管的累积应力量的参数Age，其中t是时间。 结果，精确地估计在导致最大热载流子劣化的条件下的寿命，并且可以准确地估计实际使用中的寿命。 此外，可以在短时间内利用少量的晶体管来计算热载流子寿命参数。

公开(公告)号：US06278964B1

公开(公告)日：2001-08-21

申请号：US09087413

申请日：1998-05-29

申请人： Jingkun Fang ,  Hirokazu Yonezawa ,  Lifeng Wu ,  Yoshiyuki Kawakami ,  Nobufusa Iwanishi ,  Alvin I-Hsien Chen ,  Norio Koike ,  Ping Chen ,  Chune-Sin Yeh ,  Zhihong Liu

发明人： Jingkun Fang ,  Hirokazu Yonezawa ,  Lifeng Wu ,  Yoshiyuki Kawakami ,  Nobufusa Iwanishi ,  Alvin I-Hsien Chen ,  Norio Koike ,  Ping Chen ,  Chune-Sin Yeh ,  Zhihong Liu

IPC分类号： G06F1126

CPC分类号： G01R31/318357 ,  G01R31/318328 ,  G06F17/5022

摘要： An approach for simulating hot carrier effects in an integrated circuit (IC) at the circuit level includes generating a hot carrier library of delay data for each cell in the IC, using the hot carrier library data to generate a set of scaled timing data for the IC and using the scaled timing data with a IC performance simulator to simulate the IC operation. The scaled timing data is based upon the cell delay data and time-based switching activity of each cell in the IC.

摘要翻译： 用于在电路级模拟集成电路（IC）中的热载流子效应的方法包括使用热载体库数据产生一组缩放的定时数据，以生成针对IC卡中的每个单元的延迟数据的热载体库 IC，并使用IC性能仿真器对缩放的时序数据进行模拟，以模拟IC的工作。 缩放的定时数据基于IC中每个单元的单元延迟数据和基于时间的切换活动。

公开(公告)号：US4857428A

公开(公告)日：1989-08-15

申请号：US143718

申请日：1988-01-14

申请人： Norio Koike

发明人： Norio Koike

IPC分类号： H01J29/22 ,  G03F7/021 ,  H01J9/227

CPC分类号： G03F7/021

摘要： A photoresist film containing a phosphate of a formalin condensate of diazodiphenylamine, 2.5-bis (4'-azide-2'- sulphobenzilidene) cyclopentanone Na, polyvinylalcohol, and polyvinylpyrrolidone is formed on the inner surface of a faceplate. The photoresist film is hardened by light exposure using a point or linear light source, which is essentially a circular light source, via a shadow mask having a large number of apertures. A light absorbing film is formed on this photoresist film. Then the hardened photoresist film and the light absorbing film on top of it are removed using a peeling agent.

公开(公告)号：US4596755A

公开(公告)日：1986-06-24

申请号：US690988

申请日：1985-01-14

申请人： Norio Koike ,  Hatsuo Tsukagoshi

发明人： Norio Koike ,  Hatsuo Tsukagoshi

IPC分类号： C08K5/00 ,  C08K5/544 ,  C08L7/00 ,  C08L21/00 ,  C08L23/00 ,  C08L33/00 ,  C08L33/02 ,  C08L51/00 ,  C08L51/02 ,  C08L77/00 ,  C08L101/00 ,  G03F7/008 ,  G03F7/038 ,  G03F7/075 ,  H01L21/027 ,  G03C1/71 ,  G03C1/60

CPC分类号： G03F7/008 ,  G03F7/0751

摘要： A photoresist composition, comprising, a water-soluble azide compound and a water-soluble polymer in combination with a water-soluble silane compound having at least two alkoxysilane groups.

摘要翻译： 一种光致抗蚀剂组合物，其包含与具有至少两个烷氧基硅烷基团的水溶性硅烷化合物组合的水溶性叠氮化合物和水溶性聚合物。

公开(公告)号：US4518985A

公开(公告)日：1985-05-21

申请号：US384947

申请日：1982-06-04

申请人： Masaaki Tamatani ,  Nobuyuki Tsuda ,  Norio Koike ,  Sakae Ajiro

发明人： Masaaki Tamatani ,  Nobuyuki Tsuda ,  Norio Koike ,  Sakae Ajiro

IPC分类号： H01J9/22 ,  H01J29/20 ,  H01J31/10 ,  H04N9/31

CPC分类号： H01J29/20

摘要： A projection type green cathode ray tube (CRT) with improved brightness despite an increase in the temperature of the faceplate, a method for manufacturing a phosphor screen adopted therein, and a projection video device which utilizes the projection type green CRT. The phosphor screen of the CRT is formed of a cerium-activated calcium sulfide phosphor which contains 0.01 to 0.3 mol% of cerium. According to the method for manufacturing the phosphor screen, the cerium-activated calcium sulfide phosphor is precipitated in a 0.3 to 5% aqueous solution of water glass based on weight. The aqueous solution does not contain barium ions. The projection video device includes the green CRT, a red CRT having a phosphor screen which is formed of an europium-activated yttrium oxide phosphor, and a blue CRT having a phosphor screen which is formed of a silver-activated zinc sulfide phosphor. Brightness of images is improved and does not substantially change over time.

摘要翻译： 尽管面板的温度升高，但是其中采用的荧光屏的制造方法和利用投影型绿色CRT的投影视频装置的投影型绿色阴极射线管（CRT）具有改善的亮度。 CRT的荧光屏由含有0.01〜0.3mol％的铈的铈活化的硫化钙荧光体形成。 根据荧光屏的制造方法，以0.3〜5重量％的水玻璃水溶液析出铈活化的硫化钙荧光体。 水溶液不含钡离子。 投影视频装置包括绿色CRT，具有由铕激活的氧化钇荧光体形成的荧光屏的红色CRT和具有由银活化的硫化锌荧光体形成的荧光屏的蓝色CRT。 图像的亮度得到改善，并且随着时间的推移基本上不会改变。

公开(公告)号：US4412236A

公开(公告)日：1983-10-25

申请号：US180042

申请日：1980-08-21

申请人： Akira Sasano ,  Toshio Nakano ,  Ken Tsutsui ,  Michiaki Hashimoto ,  Tadao Kaneko ,  Norio Koike ,  Akiya Izumi

发明人： Akira Sasano ,  Toshio Nakano ,  Ken Tsutsui ,  Michiaki Hashimoto ,  Tadao Kaneko ,  Norio Koike ,  Akiya Izumi

IPC分类号： H01L27/146 ,  H01L27/14 ,  H01L27/02 ,  H01L29/78

CPC分类号： H01L27/14645 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14667

摘要： A color solid-state imager comprising a semiconductor body which has a photoelectric conversion function and which includes at least photosensitive elements and switching elements, and predetermined color filters which are formed on the body; characterized in that a light absorbing layer is disposed at least over a vicinity of an output terminal of each switching element. The contours of the color filters can be accurately formed, and unnecessary light can be intercepted to stabilize the electrical characteristics of the solid-state imager.

摘要翻译： 一种彩色固态成像器，包括具有光电转换功能并且至少包括光敏元件和开关元件的半导体本体和形成在本体上的预定滤色器; 其特征在于，至少在每个开关元件的输出端子的附近设置光吸收层。 可以精确地形成滤色器的轮廓，并且可以截取不必要的光以稳定固态成像器的电特性。

公开(公告)号：US4407010A

公开(公告)日：1983-09-27

申请号：US290570

申请日：1981-08-06

申请人： Toru Baji ,  Toshihisa Tsukada ,  Norio Koike ,  Toshiyuki Akiyama ,  Iwao Takemoto ,  Shigeru Shimada ,  Chushirou Kusano ,  Shinya Ohba ,  Haruo Matsumaru

发明人： Toru Baji ,  Toshihisa Tsukada ,  Norio Koike ,  Toshiyuki Akiyama ,  Iwao Takemoto ,  Shigeru Shimada ,  Chushirou Kusano ,  Shinya Ohba ,  Haruo Matsumaru

IPC分类号： H01L27/14 ,  H01L21/8234 ,  H01L23/62 ,  H01L23/64 ,  H01L27/02 ,  H01L27/06 ,  H01L27/088 ,  H01L27/092 ,  H01L27/146 ,  H01L29/78 ,  H01L31/08 ,  H02H7/20 ,  H03F1/42 ,  H03F1/52 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/369 ,  H04N5/374 ,  H04N3/14

CPC分类号： H01L23/62 ,  H01L23/647 ,  H01L27/0251 ,  H01L27/14654 ,  H04N3/1512 ,  H04N3/1568 ,  H01L2924/0002

摘要： A solid state image pickup device having a plurality of solid state elements in a two-dimensional array so as to form picture cells. Each solid state element includes a photoelectric converting element and a switching field effect transistor to permit scanning of the elements by scanners. To counteract noise and blooming, a second field effect transistor acting as an amplifier is connected between the photoelectric converting element and the switching field effect transistor. A third field effect transistor is coupled to the photoelectric converting element for resetting the same.

摘要翻译： 具有二维阵列中的多个固态元件以形成图形单元的固态图像拾取装置。 每个固态元件包括光电转换元件和开关场效应晶体管，以允许扫描器扫描元件。 为了抵消噪声和起霜，用作放大器的第二场效应晶体管连接在光电转换元件和开关场效应晶体管之间。 第三场效应晶体管耦合到光电转换元件，用于复位它。

公开(公告)号：US4405935A

公开(公告)日：1983-09-20

申请号：US227679

申请日：1981-01-23

申请人： Toru Baji ,  Norio Koike ,  Toshihisa Tsukada ,  Iwao Takemoto ,  Hideaki Yamamoto ,  Yukio Takasaki

发明人： Toru Baji ,  Norio Koike ,  Toshihisa Tsukada ,  Iwao Takemoto ,  Hideaki Yamamoto ,  Yukio Takasaki

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/359 ,  H04N5/369 ,  H04N5/374 ,  H01L27/14

CPC分类号： H01L27/14672

摘要： Disclosed is a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for selecting positions of picture elements and scanners for turning "on" and "off" the switching elements in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected to one end of each of the switching elements, and a light transmitting electrode which is disposed on the photoconductive film, characterized at least in that a breakdown voltage of a junction formed between the semiconductor substrate and an impurity region which has a conductivity type opposite to that of the semiconductor substrate and which stores therein carriers attendant upon incidence of light is made smaller than a breakdown voltage between the storing first impurity region of said each switching element and a second impurity region thereof which forms a signal leading-out portion.

摘要翻译： 公开了一种具有半导体集成电路的固态成像装置，其中用于选择用于按时间顺序将开关元件“接通”和“关闭”的图像元素和扫描器的位置的多个开关元件设置在相同的基板上， 设置在所述集成电路上并连接到每个所述开关元件的一端的光电导膜和设置在所述光电导膜上的透光电极，其特征在于，至少形成在所述光电导膜之间形成的结的击穿电压， 所述半导体衬底和具有与所述半导体衬底的导电类型相反的导电类型并且存储在入射时伴随的载流子的杂质区域被制成小于所述每个开关元件的所述存储第一杂质区域与所述第二开关元件的存储第一杂质区域之间的击穿电压 其形成信号导出部分的杂质区域。