Low activation energy photoresists
    41.
    发明授权
    Low activation energy photoresists 有权
    低活化能光刻胶

    公开(公告)号:US07193023B2

    公开(公告)日:2007-03-20

    申请号:US10729169

    申请日:2003-12-04

    IPC分类号: C08F112/68

    CPC分类号: G03F7/0046 G03F7/0397

    摘要: Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCL in the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C. by acid-catalyzed deprotection of pendent acetal- or ketal-protected carboxylic acid groups.

    摘要翻译: 提供了含有缩醛或缩酮键的聚合物及其在平版光刻胶组合物中的用途,特别是在化学放大光致抗蚀剂中。 聚合物由至少一种含有缩醛或缩酮键的第一烯属单体制备,其酸催化裂解使聚合物可溶于碱水溶液; 和至少一种第二烯烃单体,其选自(i)含有侧氟化羟烷基R H的烯烃单体,(ii)含有侧氟化烷基磺酰胺基R S的烯属单体, SUP),和(iii)其组合。 缩醛或缩酮键可以包含在第一烯烃单体中的酸可裂解取代基R CL中。 还提供了一种使用含有这些聚合物的光致抗蚀剂组合物来制备图案化基材的方法,其中聚合物在低于约100℃的温度下可溶于碱水溶液,通过酸催化的侧链缩醛或缩酮脱保护 保护的羧酸基团。

    Molecular photoresists containing nonpolymeric silsesquioxanes
    42.
    发明授权
    Molecular photoresists containing nonpolymeric silsesquioxanes 有权
    含有非聚合倍半硅氧烷的分子光刻胶

    公开(公告)号:US07141692B2

    公开(公告)日:2006-11-28

    申请号:US10721302

    申请日:2003-11-24

    IPC分类号: C08G77/14

    摘要: A nonpolymeric silsesquioxane is provided wherein at least one silicon atom of the silsesquioxane is directly or indirectly bound to an acid-cleavable substituent RCL. The silsesquioxane has a glass transition temperature Tg of greater than 50° C., and the RCL substituent can be cleaved from the silsesquioxane at a temperature below Tg, generally at least 5° C. below Tg. The remainder of the silicon atoms within the silsesquioxane structure may be bound to additional acid-cleavable groups, acid-inert polar groups RP, and/or acid-inert nonpolar groups RNP. The nonpolymeric silsesquioxane can be a polyhedral silsesquioxane optionally having one to three open vertices, such that the polyhedron appears to be a “partial cage” structure, or a macromer of two to four such polyhedral silsesquioxanes. Photoresist compositions containing the novel nonpolymeric silsesquioxanes are also provided, as is a method for using the compositions in preparing a patterned substrate.

    摘要翻译: 提供了一种非聚合倍半硅氧烷,其中倍半硅氧烷的至少一个硅原子直接或间接地结合到酸可裂解的取代基R CL上。 倍半硅氧烷的玻璃化转变温度T 大于50℃,R CL取代基可以在低于T℃的温度下从倍半硅氧烷中裂解, 通常在T g以下至少5℃。 倍半硅氧烷结构中的剩余硅原子可以与另外的酸可裂解基团,酸惰性极性基团R和P和/或酸惰性非极性基团R SUP>。 非聚合倍半硅氧烷可以是任选具有一至三个开放顶点的多面体倍半硅氧烷,使得多面体看起来是“部分笼”结构,或两至四个这样的多面体倍半硅氧烷的大分子单体。 还提供了含有新型非聚合倍半硅氧烷的光致抗蚀剂组合物,以及在制备图案化基材时使用该组合物的方法。