公开(公告)号：US11493563B2

公开(公告)日：2022-11-08

申请号：US16668986

申请日：2019-10-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Hsieh-Hung Hsieh ,  Wu-Chen Lin ,  Yen-Jen Chen ,  Tzu-Jin Yeh

IPC: G01R31/40 ,  H03F3/21

Abstract: A testing system includes: a signal generator arranged to generate a testing signal; a dividing circuit coupled to the signal generator for providing a plurality of input signals according to the testing signal; and a plurality of power-amplifier chips coupled to the dividing circuit for being tested by generating a plurality of output signals for a predetermined testing time according to the plurality of input signals respectively.

公开(公告)号：US11316473B2

公开(公告)日：2022-04-26

申请号：US17173743

申请日：2021-02-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chi-Hsien Lin ,  Ho-Hsiang Chen ,  Hsien-Yuan Liao ,  Tzu-Jin Yeh ,  Ying-Ta Lu

IPC: H03B5/12 ,  H03B1/04 ,  H03H7/01

Abstract: A band-pass filter (BPF) includes a pair of coupled transformers including first through fourth conductive structures. The first conductive structure includes a first terminal and two first extending portions extending from the first terminal and configured as primary windings. The second conductive structure includes a second terminal and two second extending portions extending from the second terminal. A first via connects the third conductive structure to a first one of the two second extending portions, the third conductive structure and the first one of the two second extending portions thereby being configured as a first secondary winding. A second via connects the fourth conductive structure to a second one of the two second extending portions, the fourth conductive structure and the second one of the two second extending portions thereby being configured as a second secondary winding.

公开(公告)号：US11081444B2

公开(公告)日：2021-08-03

申请号：US16207041

申请日：2018-11-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chiao-Han Lee ,  Hsien-Yuan Liao ,  Ying-Ta Lu ,  Chi-Hsien Lin ,  Ho-Hsiang Chen ,  Tzu-Jin Yeh

IPC: H01L23/522 ,  H01L49/02 ,  H01L23/58 ,  H01L23/528 ,  H01L23/00 ,  H01L23/64

Abstract: An integrated circuit includes an inductor over a substrate and a guard ring surrounding the inductor. The guard ring includes a first staggered line, a first metal line extending in a first direction and a second metal line extending in a second direction different from the first direction. The first staggered line has a first end coupled to the first metal line, and a second end coupled to the second metal line. The first staggered line includes a first set of vias, a first set of metal lines in a first metal layer and a second set of metal lines in a second metal layer different from the first metal layer. The first set of vias coupling the first set of metal lines with the second of second metal lines.

公开(公告)号：US10804228B2

公开(公告)日：2020-10-13

申请号：US16400419

申请日：2019-05-01

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chia-Chung Chen ,  Chi-Feng Huang ,  Shu Fang Fu ,  Tzu-Jin Yeh ,  Chewn-Pu Jou

IPC: H01L21/762 ,  H01L29/417 ,  H01L29/78 ,  H01L21/761 ,  H01L23/66 ,  H01L29/66 ,  H01L29/10 ,  H01L21/8238 ,  H01L21/265 ,  H01L27/06 ,  H01L49/02 ,  H01L29/06 ,  H01L29/45

Abstract: A device includes a semiconductor substrate of a first conductivity type, and a deep well region in the semiconductor substrate, wherein the deep well region is of a second conductivity type opposite to the first conductivity type. The device further includes a well region of the first conductivity type over the deep well region. The semiconductor substrate has a top portion overlying the well region, and a bottom portion underlying the deep well region, wherein the top portion and the bottom portion are of the first conductivity type, and have a high resistivity. A gate dielectric is over the semiconductor substrate. A gate electrode is over the gate dielectric. A source region and a drain region extend into the top portion of the semiconductor substrate. The source region, the drain region, the gate dielectric, and the gate electrode form a Radio Frequency (RF) switch.

公开(公告)号：US10554190B2

公开(公告)日：2020-02-04

申请号：US16133207

申请日：2018-09-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Hong-Lin Chu ,  Hsieh-Hung Hsieh ,  Tzu-Jin Yeh

IPC: H03G3/30 ,  G01R31/382 ,  H03G3/00 ,  H03F3/45 ,  H01M10/48 ,  H03F3/24 ,  H04B1/04

Abstract: A transmitter circuit includes an amplifier configured to output a radio frequency (RF) signal on an output node, a power detection circuit coupled with the output node and configured to generate an output voltage having a first component based on a power level of the RF signal, and a reference voltage generator configured to generate a reference voltage. A comparator is configured to receive the output voltage and the reference voltage, an analog-to-digital converter (ADC) is coupled between the comparator and the amplifier, and the amplifier is configured to adjust the power level of the RF signal responsive to an output of the ADC.

公开(公告)号：US10079583B2

公开(公告)日：2018-09-18

申请号：US15682918

申请日：2017-08-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Hong-Lin Chu ,  Hsieh-Hung Hsieh ,  Tzu-Jin Yeh

IPC: H03C1/62 ,  H04B17/00 ,  H03G3/30 ,  H03F3/24 ,  H01M10/48 ,  H04B1/04 ,  G01R31/36

CPC classification number: H03G3/3042 ,  G01R31/382 ,  H01M10/48 ,  H03F3/24 ,  H03F3/45183 ,  H03G3/001 ,  H04B1/0466 ,  H04B2001/0416

Abstract: A circuit includes a first device between a first input node and an internal node, a second device between a second input node and the internal node, a third device between the internal node and ground, a fourth device between the internal node and an output node, and a fifth device between the output node and ground. The second and third devices generate a direct current (DC) voltage on the internal node by dividing a bias voltage on the second input node. The fourth device generates, from the DC voltage, a first component of an output voltage on the output node. The first and third devices generate a modulation signal on the internal node by dividing a radio frequency (RF) signal on the first input node. The fifth device rectifies the modulation signal to generate a second output voltage component.

公开(公告)号：US20160013141A1

公开(公告)日：2016-01-14

申请号：US14860102

申请日：2015-09-21

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chia-Chung Chen ,  Chi-Feng Huang ,  Shu Fang Fu ,  Tzu-Jin Yeh ,  Chewn-Pu Jou

IPC: H01L23/66 ,  H01L29/66 ,  H01L29/10 ,  H01L21/265

CPC classification number: H01L23/66 ,  H01L21/26513 ,  H01L21/761 ,  H01L21/7624 ,  H01L27/0629 ,  H01L28/10 ,  H01L28/40 ,  H01L29/0649 ,  H01L29/1083 ,  H01L29/41775 ,  H01L29/45 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/66568 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2223/6616 ,  H01L2223/6627 ,  H01L2223/6672 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A device includes a semiconductor substrate of a first conductivity type, and a deep well region in the semiconductor substrate, wherein the deep well region is of a second conductivity type opposite to the first conductivity type. The device further includes a well region of the first conductivity type over the deep well region. The semiconductor substrate has a top portion overlying the well region, and a bottom portion underlying the deep well region, wherein the top portion and the bottom portion are of the first conductivity type, and have a high resistivity. A gate dielectric is over the semiconductor substrate. A gate electrode is over the gate dielectric. A source region and a drain region extend into the top portion of the semiconductor substrate. The source region, the drain region, the gate dielectric, and the gate electrode form a Radio Frequency (RF) switch.

Abstract translation: 一种器件包括第一导电类型的半导体衬底和半导体衬底中的深阱区，其中深阱区具有与第一导电类型相反的第二导电类型。 该装置还包括在深井区域上的第一导电类型的阱区域。 半导体衬底具有覆盖阱区的顶部和深阱区下面的底部，其中顶部和底部是第一导电类型，并且具有高电阻率。 栅极电介质在半导体衬底之上。 栅极电极在栅极电介质上方。 源极区域和漏极区域延伸到半导体衬底的顶部。 源极区，漏极区，栅极电介质和栅电极形成射频（RF）开关。

公开(公告)号：US09178058B2

公开(公告)日：2015-11-03

申请号：US13866886

申请日：2013-04-19

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chia-Chung Chen ,  Chi-Feng Huang ,  Shu Fang Fu ,  Tzu-Jin Yeh ,  Chewn-Pu Jou

IPC: H01L29/78 ,  H01L21/336 ,  H01L21/98 ,  H01L29/417 ,  H01L29/66 ,  H01L21/761 ,  H01L29/10 ,  H01L21/762

CPC classification number: H01L23/66 ,  H01L21/26513 ,  H01L21/761 ,  H01L21/7624 ,  H01L27/0629 ,  H01L28/10 ,  H01L28/40 ,  H01L29/0649 ,  H01L29/1083 ,  H01L29/41775 ,  H01L29/45 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/66568 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2223/6616 ,  H01L2223/6627 ,  H01L2223/6672 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A device includes a semiconductor substrate of a first conductivity type, and a deep well region in the semiconductor substrate, wherein the deep well region is of a second conductivity type opposite to the first conductivity type. The device further includes a well region of the first conductivity type over the deep well region. The semiconductor substrate has a top portion overlying the well region, and a bottom portion underlying the deep well region, wherein the top portion and the bottom portion are of the first conductivity type, and have a high resistivity. A gate dielectric is over the semiconductor substrate. A gate electrode is over the gate dielectric. A source region and a drain region extend into the top portion of the semiconductor substrate. The source region, the drain region, the gate dielectric, and the gate electrode form a Radio Frequency (RF) switch.

Abstract translation: 一种器件包括第一导电类型的半导体衬底和半导体衬底中的深阱区，其中深阱区具有与第一导电类型相反的第二导电类型。 该装置还包括在深井区域上的第一导电类型的阱区域。 半导体衬底具有覆盖阱区的顶部和深阱区下面的底部，其中顶部和底部是第一导电类型，并且具有高电阻率。 栅极电介质在半导体衬底之上。 栅极电极在栅极电介质上方。 源极区域和漏极区域延伸到半导体衬底的顶部。 源极区，漏极区，栅极电介质和栅电极形成射频（RF）开关。

公开(公告)号：US20140264635A1

公开(公告)日：2014-09-18

申请号：US13866886

申请日：2013-04-19

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chia-Chung Chen ,  Chi-Feng Huang ,  Shu Fang Fu ,  Tzu-Jin Yeh ,  Chewn-Pu Jou

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/265

CPC classification number: H01L23/66 ,  H01L21/26513 ,  H01L21/761 ,  H01L21/7624 ,  H01L27/0629 ,  H01L28/10 ,  H01L28/40 ,  H01L29/0649 ,  H01L29/1083 ,  H01L29/41775 ,  H01L29/45 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/66568 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2223/6616 ,  H01L2223/6627 ,  H01L2223/6672 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A device includes a semiconductor substrate of a first conductivity type, and a deep well region in the semiconductor substrate, wherein the deep well region is of a second conductivity type opposite to the first conductivity type. The device further includes a well region of the first conductivity type over the deep well region. The semiconductor substrate has a top portion overlying the well region, and a bottom portion underlying the deep well region, wherein the top portion and the bottom portion are of the first conductivity type, and have a high resistivity. A gate dielectric is over the semiconductor substrate. A gate electrode is over the gate dielectric. A source region and a drain region extend into the top portion of the semiconductor substrate. The source region, the drain region, the gate dielectric, and the gate electrode form a Radio Frequency (RF) switch.

Abstract translation: 一种器件包括第一导电类型的半导体衬底和半导体衬底中的深阱区，其中深阱区具有与第一导电类型相反的第二导电类型。 该装置还包括在深井区域上的第一导电类型的阱区域。 半导体衬底具有覆盖阱区的顶部和深阱区下面的底部，其中顶部和底部是第一导电类型，并且具有高电阻率。 栅极电介质在半导体衬底之上。 栅极电极在栅极电介质上方。 源极区域和漏极区域延伸到半导体衬底的顶部。 源极区，漏极区，栅极电介质和栅电极形成射频（RF）开关。