公开(公告)号：US20190333819A1

公开(公告)日：2019-10-31

申请号：US16080788

申请日：2017-09-06

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: H01L21/8239 ,  H01L27/105 ,  H01L29/82 ,  H01L29/66 ,  H01L43/08 ,  G01R33/09 ,  H01L27/22 ,  H01L43/10 ,  G11C11/16 ,  H01F10/32

Abstract: A TMR element includes a reference layer, a magnetization free layer, a tunnel barrier layer between the reference layer and the magnetization free layer, and a perpendicular magnetization inducing layer and a leakage layer stacked on a side of the magnetization free layer opposite to the tunnel barrier layer side. A magnetization direction of the reference layer is fixed along a stack direction. The perpendicular magnetization inducing layer imparts magnetic anisotropy along the stack direction to the magnetization free layer. The leakage layer is disposed on an end portion region in an in-plane direction of the magnetization free layer. The perpendicular magnetization inducing layer is disposed on at least a central region in the in-plane direction of the magnetization free layer. A resistance value of the leakage layer along the stack direction per unit area in plane is less than that of the perpendicular magnetization inducing layer.

公开(公告)号：US20190319183A1

公开(公告)日：2019-10-17

申请号：US16467157

申请日：2018-08-08

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  H01L43/10 ,  H01L43/14

Abstract: A spin-current magnetization rotational element includes a spin orbit torque wiring extending in a first direction and a first ferromagnetic layer disposed in a second direction intersecting the first direction of the spin orbit torque wiring, the spin orbit torque wiring having a first surface positioned on the side where the first ferromagnetic layer is disposed, and a second surface opposite to the first surface, and the spin orbit torque wiring has a second region on the first surface outside a first region in which the first ferromagnetic layer is disposed, the second region being recessed from the first region to the second surface side.

公开(公告)号：US20190279907A1

公开(公告)日：2019-09-12

申请号：US16082914

申请日：2017-11-08

Applicant: TDK CORPORATION

Inventor： Zhenyao TANG ,  Tomoyuki SASAKI

IPC: H01L21/8239 ,  H01L27/105 ,  G01R33/09 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10

Abstract: A TMR element includes a magnetic tunnel junction, a side wall portion that covers a side surface of the magnetic tunnel junction, and a minute particle region that is disposed in the side wall portion. The side wall portion includes an insulation material. The minute particle region includes the insulation material and a plurality of minute magnetic metal particles that are dispersed in the insulation material. The minute particle region is electrically connected in parallel with the magnetic tunnel junction.

公开(公告)号：US20190206603A1

公开(公告)日：2019-07-04

申请号：US16227850

申请日：2018-12-20

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA

IPC: H01F10/32 ,  G11C11/16 ,  G11C11/18 ,  H01L43/04 ,  H01L43/14

CPC classification number: H01F10/3286 ,  G11C11/161 ,  G11C11/18 ,  H01L43/04 ,  H01L43/14

Abstract: The spin-orbit torque magnetization rotational element includes a spin-orbit torque wiring layer which extends in an X direction and a first ferromagnetic layer which is laminated on the spin-orbit torque wiring layer. The first ferromagnetic layer has shape anisotropy and has a major axis in the X direction. An easy axis of magnetization of the first ferromagnetic layer is inclined with respect to the X direction and a Y direction orthogonal to the X direction on a plane in which the spin-orbit torque wiring layer extends.

公开(公告)号：US20190189516A1

公开(公告)日：2019-06-20

申请号：US16328692

申请日：2017-12-26

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Tatsuo SHIBATA

IPC: H01L21/8239 ,  H01L27/105 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L21/8239 ,  H01L27/105 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic wall utilization type analog memory device includes a magnetization fixed layer having a magnetization oriented in a first direction, a non-magnetic layer provided on one side of the magnetization fixed layer, a magnetic wall driving layer provided on the magnetization fixed layer with the non-magnetic layer interposed therebetween, a first magnetization supplying part which is configured to supply magnetization oriented in the first direction to the magnetic wall driving layer and a second magnetization supplying part which is configured to supply magnetization oriented in a second direction reversed with respect to the first direction, wherein at least one of the first magnetization supplying part and the second magnetization supplying part is a spin-orbit torque wiring which comes into contact with the magnetic wall driving layer and extends in a direction intersecting the magnetic wall driving layer.

公开(公告)号：US20190180900A1

公开(公告)日：2019-06-13

申请号：US16081022

申请日：2017-10-16

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: H01F10/32 ,  H01L43/02 ,  G11C11/16 ,  H01L43/10 ,  H01L27/22 ,  H01L43/12 ,  H01F41/34

Abstract: A TMR element includes a magnetic tunnel junction element unit and a side wall portion that includes an insulation material and is disposed on a side surface of the magnetic tunnel junction element unit. The magnetic tunnel junction element unit includes a reference layer, a magnetization free layer, a tunnel barrier layer that is stacked in a stack direction between the reference layer and the magnetization free layer, and a cap layer is stacked on the side of the magnetization free layer opposite to the tunnel barrier layer side. The side wall portion includes a first region that includes the insulation material and covers a side surface of at least one of the reference layer, the tunnel barrier layer, the magnetization free layer, or the cap layer of the magnetic tunnel junction element unit. The first region includes, as a contained chemical element, at least one of chemical elements (except oxygen) that constitute the at least one of the reference layer, the tunnel barrier layer, the magnetization free layer, or the cap layer of the magnetic tunnel junction element unit.

公开(公告)号：US20190178956A1

公开(公告)日：2019-06-13

申请号：US16080910

申请日：2017-10-16

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: G01R33/09 ,  H01L27/22 ,  G11C11/16 ,  H01L43/08 ,  H01L43/10

Abstract: A TMR element includes a reference layer, a tunnel barrier layer, a perpendicular magnetization inducing layer, and a magnetization free layer stacked along a stack direction between the tunnel barrier layer and the perpendicular magnetization inducing layer. The perpendicular magnetization inducing layer imparts magnetic anisotropy along the stack direction to the magnetization free layer. The width of the magnetization free layer is smaller than any of the width of the tunnel barrier layer or the width of the perpendicular magnetization inducing layer.

公开(公告)号：US20190154767A1

公开(公告)日：2019-05-23

申请号：US16099628

申请日：2018-02-27

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yoshitomo TANAKA

IPC: G01R33/09 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08 ,  H01L43/02 ,  G11C11/16

Abstract: A ferromagnetic multilayer film includes first and second magnetization fixed layers, first and second interposed layers, and a magnetic coupling layer. The magnetization fixed layers are antiferromagnetically coupled by exchange coupling via the interposed layers and the magnetic coupling layer. A main element of the magnetic coupling layer is Ru, Rh, or Ir. A main element of the first interposed layer is the same as that of the magnetic coupling layer. A main element of the second interposed layer is different from that of the magnetic coupling layer. A thickness of the first interposed layer is greater than or equal to 1.5 times and less than or equal to 3.2 times an atomic radius of the main element of the first interposed layer. A thickness of the second interposed layer is less than or equal to 1.5 times an atomic radius of the main element of the second interposed layer.

公开(公告)号：US20190137576A1

公开(公告)日：2019-05-09

申请号：US16099756

申请日：2017-09-01

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: G01R33/09 ,  H01F10/30 ,  H01L21/8239 ,  H01L27/105 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10

Abstract: The present invention provides a magnetoresistance effect element that has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer provided between the first ferromagnetic metal layer and the second ferromagnetic metal layer. The tunnel barrier layer has a cubic crystal structure, and the first ferromagnetic metal layer or the second ferromagnetic metal layer is formed of a material having a cubic crystal structure represented by Fe2CoSi. A crystal surface for crystals constituting the tunnel barrier layer and a crystal surface for crystals constituting the first ferromagnetic metal layer or the second ferromagnetic metal layer are matched to be inclined at 0° or 45° in at least a part of a crystal interface between the tunnel barrier layer and the first ferromagnetic metal layer or the second ferromagnetic metal layer.

公开(公告)号：US20190006074A1

公开(公告)日：2019-01-03

申请号：US16020373

申请日：2018-06-27

Applicant: TDK CORPORATION

Inventor： Kazuumi INUBUSHI ,  Katsuyuki NAKADA ,  Tomoyuki SASAKI

IPC: H01F10/32 ,  H01L43/02 ,  H03H11/04 ,  H01L43/10 ,  H03B15/00 ,  G11B5/39 ,  G01R33/09

CPC classification number: H01F10/3259 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/1936 ,  H01F10/329 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H03B15/006 ,  H03H2/00 ,  H03H11/04

Abstract: There is provided a magnetoresistive effect element having improved magnetoresistive effect. A magnetoresistive effect element MR includes a first ferromagnetic layer 4 as a fixed magnetization layer, a second ferromagnetic layer 6 as a free magnetization layer, and a nonmagnetic spacer layer 5 provided between the first ferromagnetic layer 4 and the second ferromagnetic layer 6. The nonmagnetic spacer layer 5 includes at least one of a first insertion layer 5A provided under the nonmagnetic spacer layer 5 and a second insertion layer 5C provided over the nonmagnetic spacer layer 5. The first insertion layer 5A and the second insertion layer 5C are made of Fe2TiSi.