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公开(公告)号:US20190148341A1
公开(公告)日:2019-05-16
申请号:US16228799
申请日:2018-12-21
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Zi-Jheng Liu , Chen-Cheng Kuo , Hung-Jui Kuo
IPC: H01L25/065 , H01L23/522 , H01L23/00 , H01L23/31 , H01L23/538
Abstract: Semiconductor packages are provided. One of the semiconductor packages includes a first chip, a second chip, a first adhesive layer, a second adhesive layer and a molding layer. The first adhesive layer is disposed on a first surface of the first chip and a second adhesive layer is disposed on a second surface of the second chip, wherein the first adhesive layer and the second adhesive layer have different thickness, and a total thickness of the first chip and the first adhesive layer is substantially equal to a total thickness of the second chip and the second adhesive layer. The molding layer encapsulates the first chip, the second chip, the first adhesive layer and the second adhesive layer.
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公开(公告)号:US20190131235A1
公开(公告)日:2019-05-02
申请号:US15879457
申请日:2018-01-25
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Po-Han Wang , Hung-Jui Kuo , Yu-Hsiang Hu
IPC: H01L23/522 , H01L21/66 , H01L21/56 , H01L21/78 , H01L23/31 , H01L21/768 , H01L23/00
Abstract: A stacked via structure including a first dielectric layer, a first conductive via, a first redistribution wiring, a second dielectric layer and a second conductive via is provided. The first dielectric layer includes a first via opening. The first conductive via is in the first via opening. A first level height offset is between a top surface of the first conductive via and a top surface of the first dielectric layer. The first redistribution wiring covers the top surface of the first conductive via and the top surface of the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer and the first redistribution wiring. The second dielectric layer includes a second via opening. The second conductive via is in the second via opening. The second conductive via is electrically connected to the first redistribution wiring through the second via opening of the second dielectric layer.
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公开(公告)号:US10276421B2
公开(公告)日:2019-04-30
申请号:US15146893
申请日:2016-05-05
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Sih-Hao Liao , Hung-Jui Kuo , Yu-Hsiang Hu
Abstract: An integrated fan-out package including a die, an insulating encapsulation, a filler, and a redistribution circuit structure is provided. The insulating encapsulation encapsulates sidewalls of the die, and the insulating encapsulation includes a recess on a top surface thereof. The filler covers the top surface of the insulating encapsulation and is being at least partially filled in the recess. The redistribution circuit structure covers an active surface of the die and the filler while being electrically connected to the die. The redistribution structure includes a dielectric layer covering the die and the filler. In addition, a method of manufacturing integrated fan-out packages is also provided.
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公开(公告)号:US10204870B2
公开(公告)日:2019-02-12
申请号:US15289173
申请日:2016-10-08
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor: Zi-Jheng Liu , Jo-Lin Lan , Yu-Hsiang Hu , Hung-Jui Kuo
IPC: H01L23/544 , H01L23/538 , H01L23/00 , H01L23/58 , H01L21/48 , H01L21/78 , H01L23/31 , H01L21/56
Abstract: A method of manufacturing a semiconductor device includes: receiving a semiconductor structure having a chip region, a seal ring region surrounding the chip region, and a scribe region surroundingly defined around the seal ring region, the semiconductor structure including: a semiconductor chip in the chip region; and a molding compound disposed around the semiconductor chip and distributed in the chip region, the seal ring region and the scribe region; forming an insulating film over the chip region of the semiconductor structure and the seal ring region of the semiconductor structure; forming a seal ring over the seal ring region of the semiconductor structure and laterally adjacent to the insulating film, in which the seal ring has an exposed lateral surface facing away from the insulating film; and forming a protective layer that defines a substantially smooth and inclined lateral surface over the exposed lateral surface of the seal ring.
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公开(公告)号:US20180301389A1
公开(公告)日:2018-10-18
申请号:US15486306
申请日:2017-04-13
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Zi-Jheng Liu , Hung-Jui Kuo , Yu-Hsiang Hu
IPC: H01L23/31 , H01L23/498 , H01L23/00 , H01L25/11 , H01L23/544 , H01L21/56 , H01L25/00 , H01L21/321 , H01L21/683
Abstract: An integrated circuit package including an integrated circuit component, a patterned dielectric liner, an insulating encapsulation, and a redistribution circuit structure is provided. The integrated circuit component includes an active surface and conductive vias distributed on the active surface. The patterned dielectric liner conformally covers the active surface of the integrated circuit component and sidewalls of the conductive vias. The insulating encapsulation encapsulates sidewalls of the integrated circuit component and covers the patterned dielectric liner. The insulating encapsulation includes a planar top surface. The planar top surface of the insulating encapsulation is substantially coplanar with top surfaces of the conductive vias. The insulating encapsulation and the conductive vias are spaced apart by the patterned dielectric liner. The redistribution circuit structure is disposed on the planar top surface of the insulating encapsulation, the top surfaces of the conductive vias and the patterned dielectric liner. The redistribution circuit structure is electrically connected to the conductive vias.
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46.
公开(公告)号:US09899342B2
公开(公告)日:2018-02-20
申请号:US15164888
申请日:2016-05-26
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Tzung-Hui Lee , Hung-Jui Kuo , Ming-Che Ho , Tzu-Yun Huang
IPC: H01L23/00
CPC classification number: H01L24/02 , H01L21/568 , H01L21/6835 , H01L23/544 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/19 , H01L24/20 , H01L2221/68318 , H01L2221/68359 , H01L2221/68381 , H01L2223/54426 , H01L2223/54453 , H01L2224/02315 , H01L2224/02331 , H01L2224/02373 , H01L2224/02379 , H01L2224/0401 , H01L2224/05024 , H01L2224/11015 , H01L2224/12105 , H01L2224/13026 , H01L2224/131 , H01L2224/14181 , H01L2224/16225 , H01L2224/16265 , H01L2924/014
Abstract: A redistribution circuit structure electrically connected to at least one conductor underneath is provided. The redistribution circuit structure includes a dielectric layer, an alignment, and a redistribution conductive layer. The dielectric layer covers the conductor and includes at least one contact opening for exposing the conductor. The alignment mark is disposed on the dielectric layer. The alignment mark includes a base portion on the dielectric layer and a protruding portion on the base portion, wherein a ratio of a maximum thickness of the protruding portion to a thickness of the base portion is smaller than 25%. The redistribution conductive layer is disposed on the dielectric layer. The redistribution conductive layer includes a conductive via, and the conductive via is electrically connected to the conductor through the contact opening. A method of fabricating the redistribution circuit structure and an integrated fan-out package are also provided.
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公开(公告)号:US20250069951A1
公开(公告)日:2025-02-27
申请号:US18945942
申请日:2024-11-13
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Po-Han Wang , Yu-Hsiang Hu , Hung-Jui Kuo
IPC: H01L21/768 , H01L21/56 , H01L23/00 , H01L23/31 , H01L23/48 , H01L23/522 , H01L23/528 , H01L23/532
Abstract: A method of fabricating a redistribution circuit structure including the following steps is provided. A conductive via is formed. A photosensitive dielectric layer is formed to cover the conductive via. The photosensitive dielectric layer is partially removed to reveal the conductive via at least through an exposure and development process. A redistribution wiring is formed on the photosensitive dielectric layer and the revealed conductive via.
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公开(公告)号:US12170223B2
公开(公告)日:2024-12-17
申请号:US18362083
申请日:2023-07-31
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Po-Han Wang , Yu-Hsiang Hu , Hung-Jui Kuo
IPC: H01L21/768 , H01L21/56 , H01L23/00 , H01L23/31 , H01L23/48 , H01L23/522 , H01L23/528 , H01L23/532
Abstract: A method of fabricating a redistribution circuit structure including the following steps is provided. A conductive via is formed. A photosensitive dielectric layer is formed to cover the conductive via. The photosensitive dielectric layer is partially removed to reveal the conductive via at least through an exposure and development process. A redistribution wiring is formed on the photosensitive dielectric layer and the revealed conductive via.
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公开(公告)号:US20240395595A1
公开(公告)日:2024-11-28
申请号:US18788481
申请日:2024-07-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chen-Hua Yu , Ming-Tan Lee , Hung-Jui Kuo
IPC: H01L21/683 , B25B11/00 , H01L21/687 , H01L23/00
Abstract: An apparatus for securing a wafer includes a chuck, at least one O-ring disposed on the chuck, a vacuum system connected to the chuck, such that the vacuum system comprises a plurality of vacuum holes through the chuck connected to one or more vacuum pumps, and a controller configured to control the height of the at least one O-ring relative to the top surface of the chuck. The controller is connected to pressure sensors capable of detecting a vacuum. The at least one O-ring may include a plurality of O-rings.
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公开(公告)号:US20240395566A1
公开(公告)日:2024-11-28
申请号:US18790326
申请日:2024-07-31
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Zi-Jheng Liu , Yu-Hsiang Hu , Jo-Lin Lan , Sih-Hao Liao , Chen-Cheng Kuo , Hung-Jui Kuo , Chung-Shi Liu , Chen-Hua Yu , Meng-Wei Chou
Abstract: A semiconductor device and method that comprise a first dielectric layer over a encapsulant that encapsulates a via and a semiconductor die is provided. A redistribution layer is over the first dielectric layer, and a second dielectric layer is over the redistribution layer, and the second dielectric layer comprises a low-temperature polyimide material.
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