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75 条记录 (耗时 0.029 秒)

    Store management system and store management method
    43.
    发明申请
    Store management system and store management method 有权
    商店管理系统和商店管理方法

    公开(公告)号：US20050205670A1

    公开(公告)日：2005-09-22

    申请号：US11081052

    申请日：2005-03-15

    申请人： Eiji Natori ,  Yasuhiro Nomura

    发明人： Eiji Natori ,  Yasuhiro Nomura

    IPC分类号： A47F5/00 ,  G06K15/00 ,  G06K17/00 ,  G06K19/00 ,  G06K19/07 ,  G06Q10/00 ,  G06Q30/06 ,  G06Q50/00 ,  G06Q50/10 ,  G07G1/12

    CPC分类号： G06Q30/06 ,  G06Q20/203

    摘要： A store management system has a merchandise information management apparatus which transmits merchandise information, a merchandise tag which is provided with a first display, and receives the merchandise information which is transmitted from the merchandise information management apparatus to the merchandise tag itself and displays the merchandise information, and a display apparatus for display rack which is provided with a second display, and has a function of receiving the merchandise information which is transmitted from the merchandise information management apparatus to the display apparatus itself and displaying the merchandise information, and checking the merchandise information which is displayed on the display apparatus itself and the merchandise information which is displayed on the merchandise tag by communicating with the merchandise tag.

    摘要翻译： 存储管理系统具有商品信息管理装置，其传送商品信息，提供有第一显示器的商品标签，并将从商品信息管理装置发送的商品信息接收到商品标签本身并显示商品信息 以及具有第二显示器的显示架的显示装置，具有从商品信息管理装置向显示装置本身发送的商品信息和显示商品信息的功能，以及检查商品信息的功能 通过与商品标签通信，显示在商品标签上显示在显示装置本身上的商品信息。

    Ferroelectric memory device and method of manufacturing the same
    44.
    发明授权
    Ferroelectric memory device and method of manufacturing the same 失效
    铁电存储器件及其制造方法

    公开(公告)号：US06922351B2

    公开(公告)日：2005-07-26

    申请号：US10426635

    申请日：2003-05-01

    申请人： Eiji Natori ,  Takeshi Kijima

    发明人： Eiji Natori ,  Takeshi Kijima

    IPC分类号： H01L21/02 ,  H01L21/8246 ,  H01L27/115 ,  G11C7/00

    CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55

    摘要： A ferroelectric memory device includes first electrodes, second electrodes arranged in a direction which intersects the first electrodes, and ferroelectric films disposed in at least intersecting regions of the first electrodes and the second electrodes. Capacitors formed of the first electrodes, the ferroelectric films, and the second electrodes are disposed in a matrix. A ferroelectric phase and a paraelectric phase are mixed in each of the ferroelectric films.

    摘要翻译： 铁电存储器件包括第一电极，沿与第一电极相交的方向布置的第二电极，以及设置在第一电极和第二电极的至少交叉区域中的铁电体膜。 由第一电极，铁电体膜和第二电极形成的电容器以矩阵形式设置。 在每个铁电体膜中混合铁电相和顺电相。

    Film forming apparatus, substrate for forming oxide thin film and production method thereof
    45.
    发明申请
    Film forming apparatus, substrate for forming oxide thin film and production method thereof 有权
    成膜装置，用于形成氧化物薄膜的基板及其制造方法

    公开(公告)号：US20050148200A1

    公开(公告)日：2005-07-07

    申请号：US11071116

    申请日：2005-03-04

    申请人： Takeshi Kijima ,  Eiji Natori ,  Mitsuhiro Suzuki

    发明人： Takeshi Kijima ,  Eiji Natori ,  Mitsuhiro Suzuki

    IPC分类号： C23C14/22 ,  C23C14/50 ,  C23C14/56 ,  H01L21/285 ,  H01L29/04 ,  H01L21/31 ,  H01L31/036

    CPC分类号： C23C14/568 ,  C23C14/505

    摘要： The invention provides a film forming apparatus that is capable of forming films sequentially with two types of film forming mechanisms in the same chamber. The film forming apparatus according to the present invention includes a Pt target disposed at one side within a film forming chamber, a sputtering output mechanism to supply to the Pt target, a Pt vapor deposition source disposed at an other side within the film forming chamber, a vapor deposition output mechanism to supply to the Pt vapor deposition source, a substrate holder disposed between the Pt target and the Pt vapor deposition source within the film forming chamber to mount a substrate, a rotating mechanism to move the substrate holder so that the substrate directs to the Pt target or to the Pt vapor deposition source, a heating mechanism to heat the substrate when the substrate is subjected to a sputtering film forming, and a cooling mechanism to cool the substrate when the substrate is subjected to vapor deposition film forming.

    摘要翻译： 本发明提供一种成膜装置，其能够在相同的室中依次用两种成膜机构形成膜。 根据本发明的成膜装置包括设置在成膜室内的一侧的Pt靶，向Pt靶供给的溅射输出机构，设置在成膜室内的另一侧的Pt蒸镀源， 蒸镀输出机构，供给Pt蒸镀源，设置在成膜室内的Pt靶和Pt蒸镀源之间的基板保持架，安装基板;旋转机构，使基板保持架移动，使基板 指向Pt靶或Pt气相沉积源，当衬底经受溅射膜形成时加热衬底的加热机构，以及当衬底经历气相沉积膜形成时冷却衬底的冷却机构。

    Case for packaging
    46.
    发明授权
    Case for packaging 失效
    包装箱

    公开(公告)号：US4787552A

    公开(公告)日：1988-11-29

    申请号：US103479

    申请日：1987-09-30

    申请人： Eiji Natori

    发明人： Eiji Natori

    IPC分类号： A45C11/20 ,  A45C11/24 ,  A45C13/10 ,  B65D43/16 ,  B65D45/00

    CPC分类号： A45C11/20 ,  A45C11/24 ,  A45C13/10 ,  B65D43/162 ,  B65D2251/1025

    摘要： A case for packaging, manufactured according to the present invention, comprises a case body and a lid that engages with the case body, an engaging tab attached to the case body side and protruding outwardly, a slot attached to the lid side in such a manner that the engaging tab can be inserted in the slot, the outer surface of the engaging tab being formed of a first elevated face that protrudes substantially laterally to the direction of protrusion of the engaging tab, a step-gap part provided on the rear side, the outer surface of an edge part on the case body side that is positioned opposite to the engaging part, being formed of a second elevated face that protrudes in the same direction as the direction of protrusion of the first elevated face, the second elevated face being provided with a major cut line into which the engaging tab can be inserted longitudinally to the second elevated face, and sub cut lines that start at both ends of the major cut line towards the inside.

    摘要翻译： 根据本发明制造的用于包装的壳体包括壳体和与壳体接合的盖，附接到壳体侧并且向外突出的接合突片，以这种方式附接到盖侧的槽 接合突片可以插入槽中，接合突片的外表面由基本上横向于接合突片的突出方向突出的第一升高面形成，设置在后侧的台阶间隙部分， 壳体主体侧边缘部分的与接合部相对的边缘部分的外表面由与第一升高面的突出方向相同的方向突出的第二升高面形成，第二升高面为 设置有主切割线，其中接合突片可以纵向插入到第二升高面，以及从主切割线的两端向内侧开始的副切割线。

    Electrode, method of manufacturing the same, ferroelectric memory, and semiconductor device
    49.
    发明授权
    Electrode, method of manufacturing the same, ferroelectric memory, and semiconductor device 有权
    电极，其制造方法，铁电存储器和半导体器件

    公开(公告)号：US07163828B2

    公开(公告)日：2007-01-16

    申请号：US10805238

    申请日：2004-03-22

    申请人： Takeshi Kijima ,  Koji Ohashi ,  Eiji Natori

    发明人： Takeshi Kijima ,  Koji Ohashi ,  Eiji Natori

    IPC分类号： H01L21/00

    CPC分类号： H01L28/65 ,  H01L28/55

    摘要： The present invention relates to a method of manufacturing an electrode which includes forming an electrode over a substrate. Initial crystal nuclei of an electrode material are formed over the substrate in an island pattern, and then grown layers of the electrode material are formed by causing the initial crystal nuclei to be grown. A substrate temperature when forming the initial crystal nuclei is higher than a substrate temperature when forming the grown layers.

    摘要翻译： 本发明涉及电极的制造方法，其包括在基板上形成电极。 电极材料的初始晶核以岛状图案形成在衬底上，然后通过使初始晶核生长而形成电极材料的生长层。 当形成初始晶核时的衬底温度比形成生长层时的衬底温度高。