公开(公告)号：US07077911B2

公开(公告)日：2006-07-18

申请号：US10376276

申请日：2003-03-03

申请人： Takeshi Kijima ,  Eiji Natori ,  Mitsuhiro Suzuki

发明人： Takeshi Kijima ,  Eiji Natori ,  Mitsuhiro Suzuki

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： C23C16/45508 ,  C23C16/455

摘要： The invention provides an MOCVD apparatus and a MOCVD method which can deposit a thin film having satisfactory properties by reducing or preventing temperature decrease of a source gas. An MOCVD apparatus according to the present invention supplies a source gas, as a mixture of an MO source gas, with an oxidizing gas to a substrate to thereby form a film. The MOCVD apparatus includes a substrate holder to hold the substrate; a deposition chamber to house the substrate holder; a supply mechanism to supply the source gas to a surface of the substrate; and a heating device to heat the substrate held by the substrate holder. The deposition chamber includes a substrate housing unit to house the substrate holder holding the substrate, and a passage housing unit connected to the substrate housing unit and constituting a passage to supply the source gas to the substrate. The passage has a cross-sectional area that is smaller than the area of a deposition plane of the substrate when the passage housing unit is cut in parallel with the deposition plane of the substrate.

摘要翻译： 本发明提供一种MOCVD装置和MOCVD方法，其可以通过减少或防止源气体的温度降低来沉积具有令人满意的性能的薄膜。 根据本发明的MOCVD装置将作为MO源气体的混合物的源气体与氧化气体一起提供给基板，从而形成膜。 MOCVD装置包括用于保持基板的基板支架; 沉积室，用于容纳衬底保持器; 供应机构，用于将源气体供应到衬底的表面; 以及加热装置，用于加热由基板保持器保持的基板。 沉积室包括用于容纳保持基板的基板保持器的基板容纳单元，以及连接到基板容纳单元并构成将源气体供应到基板的通道的通道容纳单元。 当通道容纳单元与基板的沉积平面平行地切割时，通道的横截面面积小于基板的沉积平面的面积。

公开(公告)号：US07074548B2

公开(公告)日：2006-07-11

申请号：US10376253

申请日：2003-03-03

申请人： Takeshi Kijima ,  Eiji Natori ,  Mitsuhiro Suzuki

发明人： Takeshi Kijima ,  Eiji Natori ,  Mitsuhiro Suzuki

IPC分类号： B05D3/00 ,  B05D3/06

CPC分类号： C23C18/1216 ,  B01J3/008 ,  B01J19/0013 ,  B01J19/123 ,  B01J19/125 ,  B01J19/1887 ,  B01J2219/00058 ,  B05D1/025 ,  B05D2401/90 ,  C23C18/12 ,  C23C18/1283 ,  C23C18/1287 ,  C23C18/14 ,  Y02P20/544

摘要： A method of forming a thin-film including a capability to remove contaminants from the formed thin-film and/or a substrate on which the thin-film is formed using alcohol. The method includes allowing a substrate holder to support a substract. A first mixture is produced by mixing a condensation polymer containing an element of metal oxide compound and alcohol. Then second mixture is produced by mixing supercritical fluid or liquid carbon dioxide and the first mixture. A thin film is formed by applying the second mixture on a surface of the substrate. After forming the thin-film, the substrate is cleaned by applying alcohol to upper and lower surfaces, preferably the whole upper and lower surfaces, of the substract. The thin-film is crystallized by heating, and the crystallizing may include applying oxygen in a crystallizing chamber. Soft X-rays may be applied to the substrate, during the forming of the thin-film on the surface of the substrate.

摘要翻译： 一种形成薄膜的方法，该薄膜包括从形成的薄膜和/或使用酒精形成薄膜的基板去除污染物的能力。 该方法包括允许衬底保持器支撑减法。 通过混合含有金属氧化物和醇的元素的缩聚物来制备第一混合物。 然后通过混合超临界流体或液体二氧化碳和第一混合物产生第二混合物。 通过将第二混合物施加到基板的表面上来形成薄膜。 在形成薄膜之后，通过将酒精施加到底部的上表面和下表面，优选整个上表面和下表面来清洁基底。 薄膜通过加热结晶，结晶可以包括在结晶室中施加氧气。 在衬底表面形成薄膜期间，可以将软X射线施加到衬底上。

公开(公告)号：US07678241B2

公开(公告)日：2010-03-16

申请号：US11071116

申请日：2005-03-04

申请人： Takeshi Kijima ,  Eiji Natori ,  Mitsuhiro Suzuki

发明人： Takeshi Kijima ,  Eiji Natori ,  Mitsuhiro Suzuki

IPC分类号： C23C14/34

CPC分类号： C23C14/568 ,  C23C14/505

摘要： The invention provides a film forming apparatus that is capable of forming films sequentially with two types of film forming mechanisms in the same chamber. The film forming apparatus according to the present invention includes a Pt target disposed at one side within a film forming chamber, a sputtering output mechanism to supply to the Pt target, a Pt vapor deposition source disposed at an other side within the film forming chamber, a vapor deposition output mechanism to supply to the Pt vapor deposition source, a substrate holder disposed between the Pt target and the Pt vapor deposition source within the film forming chamber to mount a substrate, a rotating mechanism to move the substrate holder so that the substrate directs to the Pt target or to the Pt vapor deposition source, a heating mechanism to heat the substrate when the substrate is subjected to a sputtering film forming, and a cooling mechanism to cool the substrate when the substrate is subjected to vapor deposition film forming.

摘要翻译： 本发明提供一种成膜装置，其能够在相同的室中依次用两种成膜机构形成膜。 根据本发明的成膜装置包括设置在成膜室内的一侧的Pt靶，向Pt靶供给的溅射输出机构，设置在成膜室内的另一侧的Pt蒸镀源， 蒸镀输出机构，供给Pt蒸镀源，设置在成膜室内的Pt靶和Pt蒸镀源之间的基板保持架，安装基板;旋转机构，使基板保持架移动，使基板 指向Pt靶或Pt气相沉积源，当衬底经受溅射膜形成时加热衬底的加热机构，以及当衬底经历气相沉积膜形成时冷却衬底的冷却机构。

公开(公告)号：US20050148200A1

公开(公告)日：2005-07-07

申请号：US11071116

申请日：2005-03-04

申请人： Takeshi Kijima ,  Eiji Natori ,  Mitsuhiro Suzuki

发明人： Takeshi Kijima ,  Eiji Natori ,  Mitsuhiro Suzuki

IPC分类号： C23C14/22 ,  C23C14/50 ,  C23C14/56 ,  H01L21/285 ,  H01L29/04 ,  H01L21/31 ,  H01L31/036

CPC分类号： C23C14/568 ,  C23C14/505

摘要： The invention provides a film forming apparatus that is capable of forming films sequentially with two types of film forming mechanisms in the same chamber. The film forming apparatus according to the present invention includes a Pt target disposed at one side within a film forming chamber, a sputtering output mechanism to supply to the Pt target, a Pt vapor deposition source disposed at an other side within the film forming chamber, a vapor deposition output mechanism to supply to the Pt vapor deposition source, a substrate holder disposed between the Pt target and the Pt vapor deposition source within the film forming chamber to mount a substrate, a rotating mechanism to move the substrate holder so that the substrate directs to the Pt target or to the Pt vapor deposition source, a heating mechanism to heat the substrate when the substrate is subjected to a sputtering film forming, and a cooling mechanism to cool the substrate when the substrate is subjected to vapor deposition film forming.

摘要翻译： 本发明提供一种成膜装置，其能够在相同的室中依次用两种成膜机构形成膜。 根据本发明的成膜装置包括设置在成膜室内的一侧的Pt靶，向Pt靶供给的溅射输出机构，设置在成膜室内的另一侧的Pt蒸镀源， 蒸镀输出机构，供给Pt蒸镀源，设置在成膜室内的Pt靶和Pt蒸镀源之间的基板保持架，安装基板;旋转机构，使基板保持架移动，使基板 指向Pt靶或Pt气相沉积源，当衬底经受溅射膜形成时加热衬底的加热机构，以及当衬底经历气相沉积膜形成时冷却衬底的冷却机构。

公开(公告)号：US20050172895A1

公开(公告)日：2005-08-11

申请号：US10376276

申请日：2003-03-03

申请人： Takeshi Kijima ,  Eiji Natori ,  Mitsuhiro Suzuki

发明人： Takeshi Kijima ,  Eiji Natori ,  Mitsuhiro Suzuki

IPC分类号： C23C16/00 ,  C23C16/44 ,  C23C16/455

CPC分类号： C23C16/45508 ,  C23C16/455

摘要： [Object] To provide an MOCVD apparatus and a MOCVD method which can deposit a thin film having satisfactory properties by preventing temperature decrease of a source gas. [Solving Means] An MOCVD apparatus according to the present invention is an apparatus for supplying a source gas as a mixture of an MO source gas with an oxidizing gas to a substrate 13 to thereby form a film. The MOCVD apparatus includes a substrate holder 14 for holding the substrate 13; a deposition chamber for housing the substrate holder; a supply mechanism for supplying the source gas to a surface of the substrate; and a heating device for heating the substrate 13 held by the substrate holder. The deposition chamber includes a substrate housing unit for housing the substrate holder holding the substrate, and a passage housing unit being connected to the substrate housing unit and constituting a passage for supplying the source gas to the substrate. The passage has a cross-sectional area smaller than the area of a deposition plane of the substrate 13 when the passage housing unit is cut in parallel with the deposition plane of the substrate 13.

摘要翻译： 本发明提供一种能够通过防止源气体的温度降低而沉积具有令人满意的特性的薄膜的MOCVD装置和MOCVD方法。 本发明的MOCVD装置是将MO源气体与氧化性气体的混合物的源气体供给到基板13，从而形成膜的装置。 MOCVD装置包括用于保持基板13的基板支架14; 用于容纳衬底保持器的沉积室; 用于将源气体供给到基板的表面的供给机构; 以及用于加热由基板保持器保持的基板13的加热装置。 沉积室包括用于容纳保持基板的基板保持架的基板收纳单元，以及与基板收纳单元连接并构成用于将源气体供应到基板的通道的通道收纳单元。 当通道容纳单元与基板13的沉积平面平行地切割时，通道的横截面面积小于基板13的沉积平面的面积。

公开(公告)号：US06913675B2

公开(公告)日：2005-07-05

申请号：US10376594

申请日：2003-03-03

申请人： Takeshi Kijima ,  Eiji Natori ,  Mitsuhiro Suzuki

发明人： Takeshi Kijima ,  Eiji Natori ,  Mitsuhiro Suzuki

IPC分类号： C23C14/22 ,  C23C14/50 ,  C23C14/56 ,  H01L21/285 ,  C23C14/34

CPC分类号： C23C14/568 ,  C23C14/505

摘要： The invention provides a film forming apparatus that is capable of forming films sequentially with two types of film forming mechanisms in the same chamber.The film forming apparatus according to the present invention includes a Pt target disposed at one side within a film forming chamber, a sputtering output mechanism to supplying to the Pt target, a Pt vapor deposition source disposed at an other side within the film forming chamber, vapor deposition output mechanism to supply to the Pt vapor deposition source, a substrate holder disposed between the Pt target and the Pt vapor deposition source within the film forming chamber to mount a substrate, a rotating mechanism to move the substrate holder so that the substrate directs to the Pt target or to the Pt vapor deposition source, a heating mechanism to heat the substrate when the substrate is subjected to a sputtering film forming, and a cooling mechanism to cool the substrate when the substrate is subjected to vapor deposition film forming.

摘要翻译： 本发明提供一种成膜装置，其能够在相同的室中依次用两种成膜机构形成膜。 根据本发明的成膜装置包括设置在成膜室内的一侧的Pt靶，向Pt靶供给溅射输出机构，设置在成膜室内的另一侧的Pt蒸镀源， 气相沉积输出机构供应到Pt蒸镀源，设置在成膜室内的Pt靶和Pt蒸镀源之间以安装基板的基板保持架，用于移动基板保持件的旋转机构，使得基板引导 Pt靶或Pt蒸镀源时，在对基板进行溅射成膜时加热基板的加热机构，以及当基板进行蒸镀膜形成时冷却基板的冷却机构。

公开(公告)号：US20100289384A1

公开(公告)日：2010-11-18

申请号：US12662619

申请日：2010-04-26

申请人： Eiji Natori ,  Takeshi Kijima ,  Koichi Furuyama ,  Yuzo Tasaki

发明人： Eiji Natori ,  Takeshi Kijima ,  Koichi Furuyama ,  Yuzo Tasaki

IPC分类号： H01L41/187

CPC分类号： C04B35/457 ,  C04B35/01 ,  C04B35/16 ,  C04B35/42 ,  C04B35/4521 ,  C04B35/465 ,  C04B35/472 ,  C04B35/475 ,  C04B35/491 ,  C04B35/493 ,  C04B35/495 ,  C04B35/497 ,  C04B35/624 ,  C04B35/6264 ,  C04B35/62645 ,  C04B35/64 ,  C04B2235/3205 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3287 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/3436 ,  C04B2235/3445 ,  C04B2235/3454 ,  C04B2235/3463 ,  C04B2235/664 ,  C04B2235/76 ,  C04B2235/80 ,  C23C14/08 ,  C23C16/40 ,  C23C16/409 ,  C23C18/1208 ,  C23C18/1225 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L41/1878 ,  H01L41/318

摘要： A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.

摘要翻译： 一种制造陶瓷的方法包括：形成包含具有氧八面体结构的复合氧化物材料和对复合氧化物材料具有催化作用的顺电性材料的混合状态的膜，并对膜进行热处理，其中， 顺电材料是构成元素中包含Si的层状催化物质和构成元素中包含Si和Ge的层状催化物质之一。 热处理包括烧结和后退火。 至少在包括氧和臭氧中的至少一种的加压气氛中进行后退火。 陶瓷是具有氧八面体结构的复合氧化物，并且具有氧八面体结构中的Si和Ge。

公开(公告)号：US20090230821A1

公开(公告)日：2009-09-17

申请号：US12385539

申请日：2009-04-10

申请人： Eiji Natori ,  Takeshi Kijima ,  Koichi Furuyama ,  Yuzo Tasaki

发明人： Eiji Natori ,  Takeshi Kijima ,  Koichi Furuyama ,  Yuzo Tasaki

IPC分类号： H01L41/187

CPC分类号： C04B35/457 ,  C04B35/01 ,  C04B35/16 ,  C04B35/42 ,  C04B35/4521 ,  C04B35/465 ,  C04B35/472 ,  C04B35/475 ,  C04B35/491 ,  C04B35/493 ,  C04B35/495 ,  C04B35/497 ,  C04B35/624 ,  C04B35/6264 ,  C04B35/62645 ,  C04B35/64 ,  C04B2235/3205 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3287 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/3436 ,  C04B2235/3445 ,  C04B2235/3454 ,  C04B2235/3463 ,  C04B2235/664 ,  C04B2235/76 ,  C04B2235/80 ,  C23C14/08 ,  C23C16/40 ,  C23C16/409 ,  C23C18/1208 ,  C23C18/1225 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L41/1878 ,  H01L41/318

摘要： A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.

摘要翻译： 一种制造陶瓷的方法包括：形成包含具有氧八面体结构的复合氧化物材料和对复合氧化物材料具有催化作用的顺电性材料的混合状态的膜，并对膜进行热处理，其中， 顺电材料是构成元素中包含Si的层状催化物质和构成元素中包含Si和Ge的层状催化物质之一。 热处理包括烧结和后退火。 至少在包括氧和臭氧中的至少一种的加压气氛中进行后退火。 陶瓷是具有氧八面体结构的复合氧化物，并且具有氧八面体结构中的Si和Ge。

公开(公告)号：US07371473B2

公开(公告)日：2008-05-13

申请号：US11286286

申请日：2005-11-25

申请人： Takeshi Kijima ,  Yasuaki Hamada ,  Eiji Natori ,  Koji Ohashi

发明人： Takeshi Kijima ,  Yasuaki Hamada ,  Eiji Natori ,  Koji Ohashi

IPC分类号： B32B9/00

CPC分类号： C01G33/006 ,  C01G35/006 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2004/04 ,  C01P2004/80 ,  C01P2006/40 ,  C01P2006/80 ,  H01B1/08 ,  H01G4/1254 ,  H01G4/33 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/316 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/57 ,  H01L41/0805 ,  H01L41/1876 ,  H01L41/318

摘要： A ferroelectric film is formed by an oxide that is described by a general formula AB1-xNbxO3. An A element includes at least Pb, and a B element includes at least one of Zr, Ti, V, W, Hf and Ta. The ferroelectric film includes Nb within the range of: 0.05 ≦x

摘要翻译： 铁氧体膜由通式AB 1-x N x O 3 O 3所描述的氧化物形成。 A元素至少包含Pb，B元素包括Zr，Ti，V，W，Hf和Ta中的至少一种。 铁电体膜包括在0.05 <= x <1的范围内的Nb。 铁电薄膜可用于1T1C，2T2C和简单矩阵类型的铁电存储器。

公开(公告)号：US07214977B2

公开(公告)日：2007-05-08

申请号：US11241959

申请日：2005-10-04

申请人： Takeshi Kijima ,  Yasuaki Hamada ,  Eiji Natori

发明人： Takeshi Kijima ,  Yasuaki Hamada ,  Eiji Natori

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/00

CPC分类号： H01L21/02197 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02356 ,  H01L21/31691

摘要： A ferroelectric thin film formed of a highly oriented polycrystal in which 180° domains and 90° domains arrange at a constant angle to an applied electric field direction in a thin film plane and reversely rotate in a predetermined electric field.

摘要翻译： 由高取向多晶形成的铁电薄膜，其中180°畴和90°畴以与薄膜平面中所施加的电场方向成一定角度排列，并在预定电场中反向旋转。