摘要:
A resistor 1 in which at least one resistance film 4 is embedded in a ceramic sintered body 3, glass is diffused into the sintered body 3 to form a glass diffusion layer 6, and both end faces 4a and 4b of the resistance film 4 are respectively exposed to both end faces 3a and 3b of the ceramic sintered body 3.
摘要:
In a solid inductor having an inner conductor formed by passing through a magnetic material, a vitreous diffused material is applied to the surface of the magnetic material, and the diffused material is diffused into the magnetic material by heat treatment, to form a diffusion layer exhibiting low permeability. The thickness of this diffusion layer is adjusted, thereby to make it possible to adjust the inductance value of the solid inductor as well as to improve resistance to humidity of the solid inductor.
摘要:
A chip type varistor in which first and second inner electrodes are embedded in a sintered body obtained by laminating a plurality of semiconductor ceramics layers so as not to be overlapped with each other in the direction of thickness of the ceramics layers, respective one edges of the first and second inner electrodes are led out to one and the other of a pair of side surfaces opposed to each other of the sintered body and are electrically connected to outer electrodes formed on the pair of side surfaces of the sintered body, respectively, a non-connected type inner electrode which is not electrically connected to the above described outer electrodes is embedded in the sintered body, and the non-connected type inner electrode is arranged so as to be overlapped with the first and second inner electrodes while being separated by the semiconductor ceramics layer.
摘要:
A monolithic type varistor in which a plurality of inner electrodes are arranged in a sintered body composed of semiconductor ceramics so as to be overlapped with each other while being separated by semiconductor ceramic layers. The plurality of inner electrodes are electrically connected to first and second outer electrodes formed on both end surfaces of the sintered body. One or more non-connected type inner electrodes are arranged between adjacent ones of the plurality of inner electrodes and are not electrically connected to the outer electrodes, each of the non-connected type inner electrodes being spaced apart from each adjacent inner electrode or non-connected type inner electrode while being separated therefrom by a semiconductor ceramic layer. Voltage non-linearity is obtained by Schottky barriers formed at the interface of the inner electrode and the semiconductor ceramic layer and the interface of the non-connected type inner electrode and the semiconductor ceramic layer. The value of the number of grain boundaries between semiconductor particles in at least one semiconductor ceramic layer is two or less.
摘要:
Respective first end portions of first and second internal electrodes are exposed at respective end surfaces of a varistor body, which is in the form of a rectangular parallelepiped. These end surfaces of the varistor body are covered with low resistance parts which include ceramic material in order to prevent the internal electrodes from decomposition. External electrodes are formed on the low resistance parts, so as, to be electrically connected with corresponding ones of the internal electrodes through the low resistance parts.
摘要:
A radio communication system 1 includes a pico-cell base station PeNB in stalled in a communication area of a macro-cell base station MeNB, having lower transmission power than the macro-cell base station MeNB, and expanded in its coverage. The macro-cell base station MeNB determines a degree of expanding the coverage of the pico-cell base station PeNB, according to an amount of usable PDSCH resources of the macro-cell base station MeNB.
摘要:
A radio communication system 1 comprises a picocell base station PeNB placed within a communication area of a macrocell base station MeNB and has transmission output lower than the macrocell base station MeNB. A coverage of the picocell base station PeNB is expanded. A usable resource being a radio resource which a high-power base station is allowed to use as PDSCH is determined on the basis of a degree of expansion of coverage of a low-power base station.
摘要:
A radio base station (eNB10-1) transmits a Resource Status Update message including first load information indicating the load level thereof to a radio base station (eNB10-2) when the load level thereof is less than a first threshold, and omits the transmission of the Resource Status Update message including the first load information when the load level thereof is the first threshold or more.
摘要:
A radio base station (eNB1), which is used in a radio communication system that can autonomously adjust, based on load information transmitted/received between radio base stations, the radio base station parameters used for defining coverage, comprises: a network communication unit (140) that can receive, from another radio base station, first load information indicating the load level of the other radio base station and that can transmit, to the other radio base station, a request for transmission of second load information the information amount of which is greater than that of the first load information; and a control unit (120) that, when the load level of the other radio base station indicated by the received first load information satisfies a given condition, controls such that the request for transmission of the second load information is transmitted to the other radio base station.
摘要:
A diode type ultraviolet sensor having a layered-structure body including a conductive layer composed of a sintered ceramic body having conductivity and a semiconductor layer composed of an oxide semiconductor including ZnO. The semiconductor layer is disposed on a principal surface of the conductive layer and forms a heterojunction with the conductive layer. The ultraviolet sensor is used in such a condition that the semiconductor layer is positioned at a light-receiving side irradiated by ultraviolet rays. The semiconductor layer is preferably composed of a sintered body. The sintered body serving as the conductive layer and sintered body serving as the semiconductor layer are preferably formed by co-firing. Terminal electrodes are provided on a principal surface and the other principal surface of the layered-structure body, respectively.