公开(公告)号：US5912603A

公开(公告)日：1999-06-15

申请号：US761984

申请日：1996-12-11

Applicant: Hitoshi Tada ,  Hiromi Ogura

Inventor： Hitoshi Tada ,  Hiromi Ogura

IPC: H01P1/205 ,  H01P7/04

CPC classification number: H01P1/2056

Abstract: A dielectric filter includes: a dielectric block having a pair of opposing end faces; a through-hole formed between the pair of opposing end faces of the dielectric block; an inner conductor formed on the inner surface of the through-hole, the inner conductor being open-circuited at both its ends; an outer conductor formed on the outer surface of the dielectric block; and a connection conductor by which a central part of the inner conductor between its two opposing ends is connected to the outer conductor. Although the dielectric filter is composed of the single dielectric block, it behaves as a band-elimination filter having pass-bands around the elimination-band centered at a trap frequency wherein elimination occurs at both edges of the pass-bands.

Abstract translation: 介质滤波器包括：介质块，具有一对相对的端面; 形成在介电块的一对相对端面之间的通孔; 形成在所述通孔的内表面上的内导体，所述内导体在其两端开放; 形成在介质块的外表面上的外部导体; 以及连接导体，通过该连接导体，其两个相对端之间的内部导体的中心部分连接到外部导体。 虽然介质滤波器由单个介质块组成，但其作为带通滤波器，其作用是以在陷波频率为中心的消除频带周围具有通带，其中消除发生在通带的两个边缘处。

公开(公告)号：US5870006A

公开(公告)日：1999-02-09

申请号：US749067

申请日：1996-11-14

Applicant: Hitoshi Tada ,  Hideyuki Kato

Inventor： Hitoshi Tada ,  Hideyuki Kato

IPC: H01P1/205 ,  H01P1/213 ,  H01P1/202 ,  H01P1/20

CPC classification number: H01P1/2056

Abstract: For a BEF type dielectric filter, a plurality of one-stage band-elimination filters (BEFs) each composed of two resonant lines inter-digitally pair-coupled to each other, are provided within one dielectric block and phase-shifting-coupled to each other at an electrical angle of .pi./2 in an inter-digital or comb-line manner. In addition, an input or output resonant line is provided which is phase-shifting-coupled to an input or output resonant line of the BEF type dielectric filter at an electrical angle of .pi./2 in an inter-digital or comb-line manner.

Abstract translation: 对于BEF型介质滤波器，在一个介质块内设置多个由两个谐振线组成的多个一级带除滤波器（BEF），两路谐振线相互配对耦合，并相移至每个 其他以π/ 2的电角度以数字或梳状方式。 此外，提供输入或输出谐振线路，其以数字或梳状方式以π/ 2的电角度相移耦合到BEF型介质滤波器的输入或输出谐振线路。

公开(公告)号：US5764117A

公开(公告)日：1998-06-09

申请号：US677925

申请日：1996-07-10

Applicant: Hiroshi Tada ,  Hajime Suemasa ,  Haruo Matsumoto ,  Takashi Maruyama ,  Hideyuki Kato ,  Yasuo Yamada ,  Hirohumi Miyamoto ,  Hitoshi Tada

Inventor： Hiroshi Tada ,  Hajime Suemasa ,  Haruo Matsumoto ,  Takashi Maruyama ,  Hideyuki Kato ,  Yasuo Yamada ,  Hirohumi Miyamoto ,  Hitoshi Tada

IPC: H01P1/205 ,  H01P1/213 ,  H01P5/08 ,  H01P7/04 ,  H05K1/02 ,  H05K1/14 ,  H05K3/34 ,  H05K3/36 ,  H01P1/202

CPC classification number: H05K1/0243 ,  H01P1/2056 ,  H05K1/141 ,  H05K2201/049 ,  H05K2201/09181 ,  H05K2201/10068 ,  H05K2201/10969 ,  H05K3/3442 ,  H05K3/3452 ,  H05K3/368

Abstract: A method of manufacturing a dielectric resonant component includes at least one dielectric multistage resonator including one dielectric block, a plurality of inner conductor formation holes formed in the one dielectric block, an inner conductor formed on an inner surface of each of the inner conductor formation holes, and an outer conductor covering a substantially entire outer surface of the one dielectric block, the dielectric multistage resonator constituting a plurality of dielectric resonators in the one dielectric block; and a mount substrate fixedly mounted on the dielectric multistage resonator, for transmitting signal transmission between each of the dielectric resonators of the dielectric multistage resonator and an external circuit board, when the dielectric resonant component is mounted on the external circuit board. The dielectric multistage resonator further includes a pair of input/output electrodes, and the mount substrate includes a unit for connecting the input/output electrodes of the dielectric multistage resonator to a pair of input/output electrodes formed on the circuit board.

Abstract translation: 一种制造介质谐振元件的方法包括至少一个电介质多级谐振器，其包括一个介电块，形成在一个介质块中的多个内导体形成孔，形成在每个内导体形成孔的内表面上的内导体 以及覆盖所述一个介质块的大致整个外表面的外导体，所述介质多级谐振器在所述一个介质块中构成多个介质谐振器; 以及固定安装在电介质多级谐振器上的安装基板，用于在电介质多级谐振器的每个介质谐振器和外部电路板之间传输信号，当介质谐振元件安装在外部电路板上时。 电介质多级谐振器还包括一对输入/输出电极，并且安装基板包括用于将电介质多级谐振器的输入/输出电极连接到形成在电路板上的一对输入/输出电极的单元。

公开(公告)号：US5390205A

公开(公告)日：1995-02-14

申请号：US58366

申请日：1993-05-10

Applicant: Kenzo Mori ,  Tadashi Kimura ,  Yoshitatu Kawama ,  Nobuaki Kaneno ,  Tatuya Kimura ,  Yuji Okura ,  Hitoshi Tada

Inventor： Kenzo Mori ,  Tadashi Kimura ,  Yoshitatu Kawama ,  Nobuaki Kaneno ,  Tatuya Kimura ,  Yuji Okura ,  Hitoshi Tada

IPC: H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/227 ,  H01S5/323 ,  H01S3/19

CPC classification number: H01S5/227 ,  H01S5/2059 ,  H01S5/2081 ,  H01S5/209 ,  H01S5/2201 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2272 ,  H01S5/2275 ,  H01S5/32391 ,  Y10S148/095

Abstract: A semiconductor laser includes a first conductivity type semiconductor substrate; a double-heterojunction structure including a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer successively disposed on the semiconductor substrate; two parallel stripe grooves forming the double-heterojunction structure in a mesa shape; a first conductivity type mesa embedding layer, a second conductivity type current blocking layer, and a first conductivity type current blocking layer successively disposed on the semiconductor substrate and contacting opposite sides of the mesa; and impurity doped regions formed by adding an impurity through the surface of the first conductivity type current blocking layer. The impurity doped regions electrically separate an upper part of the mesa from the second conductivity type current blocking layer at opposite sides of the mesa. Since the second conductivity type current blocking layer is not in contact with the mesa structure, no leakage current path is formed in the laser structure.

Abstract translation: 半导体激光器包括第一导电型半导体衬底; 包括依次设置在所述半导体衬底上的第一导电型包覆层，有源层和第二导电型包层的双异质结结构; 两个平行的条纹槽形成台状形状的双异质结结构; 依次设置在半导体衬底上并接触台面相对两侧的第一导电型台面埋置层，第二导电型电流阻挡层和第一导电型电流阻挡层; 以及通过在第一导电型电流阻挡层的表面添加杂质而形成的杂质掺杂区域。 杂质掺杂区域在台面的相对侧将台面的上部与第二导电型电流阻挡层电隔离。 由于第二导电型电流阻挡层不与台面结构接触，所以在激光器结构中不形成漏电流路径。

公开(公告)号：US20100003778A1

公开(公告)日：2010-01-07

申请号：US12274435

申请日：2008-11-20

Applicant: Hitoshi Tada ,  Tsutomu Yamaguchi ,  Zempei Kawazu ,  Yuji Okura

Inventor： Hitoshi Tada ,  Tsutomu Yamaguchi ,  Zempei Kawazu ,  Yuji Okura

IPC: H01L33/00

CPC classification number: H01S5/22 ,  H01S5/2081 ,  H01S5/209 ,  H01S5/2214 ,  H01S5/2224

Abstract: A method of manufacturing a semiconductor laser includes sequentially forming a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on top of one another on a semiconductor substrate; forming a ridge in the second conductivity type semiconductor layer; forming a first insulating film on the second conductivity type semiconductor layer at a first temperature; forming a second insulating film on the first insulating film at a second temperature, lower than the first temperature; and forming an electrode on the second insulating film.

Abstract translation: 半导体激光器的制造方法包括在半导体基板上依次形成第一导电型半导体层，有源层和第二导电型半导体层， 在第二导电类型半导体层中形成脊; 在第一温度下在第二导电类型半导体层上形成第一绝缘膜; 在低于第一温度的第二温度下在第一绝缘膜上形成第二绝缘膜; 以及在所述第二绝缘膜上形成电极。

公开(公告)号：US20080226223A1

公开(公告)日：2008-09-18

申请号：US12123531

申请日：2008-05-20

Applicant: Atsushi Sugitatsu ,  Hitoshi Tada ,  Susumu Noda

Inventor： Atsushi Sugitatsu ,  Hitoshi Tada ,  Susumu Noda

IPC: G02B6/12 ,  H01L21/00

CPC classification number: H01S5/0425 ,  B82Y20/00 ,  G02B6/12004 ,  G02B6/1225 ,  G02F1/025 ,  G02F2202/32 ,  H01L2933/0083 ,  H01S5/0424 ,  H01S5/105 ,  H01S5/1085 ,  H01S5/2004 ,  H01S5/3054 ,  H01S5/32

Abstract: A semiconductor device has a two-dimensional slab photonic crystal structure in which a substrate supports a sheet-like slab layer including, sequentially stacked, a lower cladding layer, an active layer, and an upper cladding layer. A periodic refractive index profile structure, in surfaces of the stacked layers, introduces a linear defect region that serves as a waveguide. A p-type region and an n-type region in the slab layer define a pn junction surface at a predetermined angle with respect to the surfaces of the stacked layers in the slab layer.

Abstract translation: 半导体器件具有二维平板光子晶体结构，其中基板支撑包括顺序堆叠的下包层，有源层和上包层的片状板层。 在堆叠层的表面中的周期性折射率分布结构引入用作波导的线性缺陷区域。 板状层中的p型区域和n型区域相对于板坯层中的堆叠层的表面以预定的角度限定pn结表面。

公开(公告)号：US20050029536A1

公开(公告)日：2005-02-10

申请号：US10852180

申请日：2004-05-25

Applicant: Atsushi Sugitatsu ,  Hitoshi Tada ,  Susumu Noda

Inventor： Atsushi Sugitatsu ,  Hitoshi Tada ,  Susumu Noda

IPC: H01S5/20 ,  G02B6/122 ,  H01S5/042 ,  H01L33/00

CPC classification number: H01S5/0425 ,  B82Y20/00 ,  G02B6/12004 ,  G02B6/1225 ,  G02F1/025 ,  G02F2202/32 ,  H01L2933/0083 ,  H01S5/0424 ,  H01S5/105 ,  H01S5/1085 ,  H01S5/2004 ,  H01S5/3054 ,  H01S5/32

Abstract: A semiconductor device has a two-dimensional slab photonic crystal structure in which a substrate supports a sheet-like slab layer including, sequentially stacked, a lower cladding layer, an active layer, and an upper cladding layer. A periodic refractive index profile structure, in surfaces of the stacked layers, introduces a linear defect region that serves as a waveguide. A p-type region and an n-type region in the slab layer define a pn junction surface at a predetermined angle with respect to the surfaces of the stacked layers in the slab layer.

Abstract translation: 半导体器件具有二维平板光子晶体结构，其中基板支撑包括顺序堆叠的下包层，有源层和上包层的片状板层。 在堆叠层的表面中的周期性折射率分布结构引入用作波导的线性缺陷区域。 板状层中的p型区域和n型区域相对于板坯层中的堆叠层的表面以预定的角度限定pn结表面。

公开(公告)号：US06778751B2

公开(公告)日：2004-08-17

申请号：US09817058

申请日：2001-03-27

Applicant: Hitoshi Tada ,  Kazuhisa Takagi

Inventor： Hitoshi Tada ,  Kazuhisa Takagi

IPC: G02B610

CPC classification number: G02F1/025 ,  G02F2201/063 ,  G02F2201/12 ,  G02F2202/42

Abstract: An optical waveguide ridge has a side with a flat portion extending uniformly from a top of the ridge to a surface of a semiconductor substrate, the flat portion being in contact with an exposed surface of the substrate. A p-type electrode extends from the top of the optical waveguide ridge downward in contact with a dielectric film on the flat portion of the optical waveguide ridge. The p-type electrode further extends over the dielectric film onto the exposed surface of the semiconductor substrate where an end of the electrode is a bonding pad.

Abstract translation: 光波导脊具有从脊的顶部到半导体基板的表面均匀延伸的平坦部分的一侧，平坦部分与基板的暴露表面接触。 p型电极从光波导脊的顶部向下延伸，与光波导脊的平坦部分上的电介质膜接触。 p型电极进一步在电介质膜上延伸到半导体衬底的露出表面上，其中电极的端部是焊盘。

公开(公告)号：US06556101B1

公开(公告)日：2003-04-29

申请号：US09707264

申请日：2000-11-06

Applicant: Hitoshi Tada ,  Hideyuki Kato ,  Haruo Matsumoto

Inventor： Hitoshi Tada ,  Hideyuki Kato ,  Haruo Matsumoto

IPC: H01P1202

CPC classification number: H01P1/2056 ,  H01P7/04

Abstract: A small-sized low-loss dielectric resonator, dielectric filter, and dielectric duplexer, and a communication device using such an element. Through-holes are formed in a dielectric block. The inner surface of each through-hole is covered with a thin-film multilayer electrode consisting of an outermost conductive layer and a multilayer region including thin-film conductive layers and thin-film dielectric layers. An outer conductor having a similar thin-film multilayer electrode structure is formed on the outer surface of the dielectric block. An outer conductor in the form of a single-layer electrode is formed on a short-circuited end face of the dielectric block thereby connecting together the thin-film conductive layers of the inner and outer conductors.

Abstract translation: 小型低损耗介质谐振器，介质滤波器和介质双工器，以及使用这种元件的通信装置。 在介质块中形成通孔。 每个通孔的内表面被由最外面的导电层和包括薄膜导电层和薄膜电介质层的多层区组成的薄膜多层电极覆盖。 在介质块的外表面上形成具有类似薄膜多层电极结构的外导体。 在介质块的短路端面上形成单层电极形式的外导体，由此将内导体和外导体的薄膜导电层连接在一起。

公开(公告)号：US06359529B1

公开(公告)日：2002-03-19

申请号：US08998252

申请日：1997-12-24

Applicant: Kikuo Tsunoda ,  Hitoshi Tada

Inventor： Kikuo Tsunoda ,  Hitoshi Tada

IPC: H01P1213

CPC classification number: H01P1/2135 ,  H01P1/2136

Abstract: The invention provides a filtering device of the transmission-reception switched type which can be constructed in a form with a reduced size at a low cost without having to use circuit elements such as a capacitor, a coil, and a transmission line forming a phase shift circuit which are not essential to the filtering device. Inner conductors serving as distributed-parameter resonance lines are formed in a dielectric block. There is provided a coupling line coupled with particular inner conductors. The open-circuited ends of these particular inner conductors are connected to an outer conductor via corresponding diode switches so that transmission and reception filters are switched from each other when either diode switch is selectively turned on.

Abstract translation: 本发明提供了一种发送 - 接收切换型滤波装置，其可以以低成本构成尺寸减小的形式，而不必使用诸如电容器，线圈和形成相移的传输线之类的电路元件 电路对滤波装置不是必需的。 用作分布参数谐振线的内导体形成在介质块中。 提供了与特定内部导体耦合的耦合线。 这些特定内部导体的开路端通过相应的二极管开关连接到外部导体，使得当二极管开关选择性地导通时，发射和接收滤波器彼此切换。