公开(公告)号：US20060039008A1

公开(公告)日：2006-02-23

申请号：US11256967

申请日：2005-10-25

申请人： Tatehito Usui ,  Takashi Fujii ,  Motohiko Yoshigai ,  Tetsunori Kaji

发明人： Tatehito Usui ,  Takashi Fujii ,  Motohiko Yoshigai ,  Tetsunori Kaji

IPC分类号： G01B11/02

CPC分类号： G01B11/0675 ,  G01B11/0625 ,  H01L21/67069 ,  H01L22/26 ,  Y10T436/106664

摘要： A standard pattern of a differential value of an interference light is set with respect to a predetermined film thickness of a first member to be processed. The standard pattern uses a wavelength as a parameter. Then, an intensity of an interference light of a second member to be processed, composed just like the first member, is measured with respect to each of a plurality of wavelengths so as to obtain a real pattern of an differential value of the measured interference light intensity. The real pattern also uses a wavelength as a parameter. Then, the film thickness of the second member is obtained according to the standard pattern and the real pattern of the differential value.

公开(公告)号：US20050236364A1

公开(公告)日：2005-10-27

申请号：US11154698

申请日：2005-06-17

申请人： Akira Kagoshima ,  Motohiko Yoshigai ,  Hideyuki Yamamoto ,  Daisuke Shiraishi ,  Junichi Tanaka ,  Kenji Tamaki ,  Natsuyo Morioka

发明人： Akira Kagoshima ,  Motohiko Yoshigai ,  Hideyuki Yamamoto ,  Daisuke Shiraishi ,  Junichi Tanaka ,  Kenji Tamaki ,  Natsuyo Morioka

IPC分类号： H01L21/3065 ,  H01L21/00 ,  H01L21/3213 ,  H01L21/66 ,  H01L21/302

CPC分类号： H01L21/67253 ,  G05B2219/45212 ,  H01J37/32935 ,  H01L21/32137 ,  H01L22/20

摘要： An etching method for subjecting a single film to be etched to etching comprised of a plurality of etching steps based on respectively different recipes, includes steps of generating and fixing a recipe which is a preset recipe to be applied to an etching step of the plurality of etching steps which affects an underlying film making contact with the single film to be etched, generating different recipes other than the preset recipe to be applied to other etching steps of the plurality of etching steps, wherein at least one of the different recipes for the other etching steps is generated on the basis of processed results, and conducting etching of the single film according to the recipes generated.

摘要翻译： 一种蚀刻方法，用于对单个膜进行蚀刻以基于各自不同的配方的多个蚀刻步骤进行的蚀刻，包括以下步骤：产生和固定作为要应用于多个蚀刻步骤的蚀刻步骤的预设配方的配方 蚀刻步骤，其影响与待蚀刻的单个膜接触的底层膜，产生除了应用于多个蚀刻步骤的其它蚀刻步骤的预设配方之外的不同配方，其中至少一个不同的配方用于另一个 基于处理结果产生蚀刻步骤，并根据生成的配方对单个膜进行蚀刻。

公开(公告)号：US06743733B2

公开(公告)日：2004-06-01

申请号：US09946507

申请日：2001-09-06

申请人： Hiroyuki Kitsunai ,  Junichi Tanaka ,  Takashi Fujii ,  Motohiko Yoshigai

发明人： Hiroyuki Kitsunai ,  Junichi Tanaka ,  Takashi Fujii ,  Motohiko Yoshigai

IPC分类号： H01L21302

CPC分类号： H01L21/32137 ,  Y10S438/905 ,  Y10S438/907

摘要： By conducting etching treatment using at least two steps with different compositions of gases for each step, and at least one step comprising using a gas capable of decomposing and vaporizing etching products in an etching apparatus continuously, semicondictor devices can be produced with high productivity, low contaminant and good reproducibility of treatment state.

摘要翻译： 通过使用至少两个步骤对每个步骤进行具有不同组成的气体的至少两个步骤的蚀刻处理，以及包括使用能够在蚀刻装置中连续分解和蒸发蚀刻产物的气体的至少一个步骤，可以以高生产率，低生产率生产半衰减器件 污染物和处理状态的良好重复性。

公开(公告)号：US06664738B2

公开(公告)日：2003-12-16

申请号：US10083381

申请日：2002-02-27

申请人： Masatsugu Arai ,  Ryujiro Udo ,  Naoyuki Tamura ,  Masanori Kadotani ,  Motohiko Yoshigai

发明人： Masatsugu Arai ,  Ryujiro Udo ,  Naoyuki Tamura ,  Masanori Kadotani ,  Motohiko Yoshigai

IPC分类号： H01J724

CPC分类号： H01L21/67109 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/6833

摘要： There is provided a plasmar processing apparatus capable of positively controlling the temperature distribution of a semiconductor wafer during etching processing in a clear state, wherein an electrode block is provided with independent slits as coolant flow paths on the inner and outer peripheries and, at the same time, between these slits is formed a slit for suppressing heat transfer between the inner and outer peripheries, and owing to this slit for suppressing heat transfer, a uniform temperature in the electrode block is suppressed and thus it is possible to obtain an arbitrary independent temperature in the plane of the electrode block and positive and clear control of temperature distribution patterns can be performed.

公开(公告)号：US20100282414A1

公开(公告)日：2010-11-11

申请号：US12842368

申请日：2010-07-23

申请人： Naoshi ITABASHI ,  Tsutomu Tetsuka ,  Seiichiro Kanno ,  Motohiko Yoshigai

发明人： Naoshi ITABASHI ,  Tsutomu Tetsuka ,  Seiichiro Kanno ,  Motohiko Yoshigai

IPC分类号： H01L21/306

CPC分类号： H01J37/32706 ,  H01J37/32082 ,  H01J37/32495 ,  H01J37/32935 ,  H01L21/6831

摘要： A plasma processing apparatus including a chamber having an inner wall with a protective film thereon and a sample stage disposed in the chamber in which plasma is generated by supplying high-frequency wave energy to processing gas to conduct plasma processing for a sample on the sample stage using the plasma. The apparatus includes a control device which determines, based on monitor values of a wafer attracting current monitor (Ip) to monitor a current supplied from a wafer attracting power source, an impedance monitor (Zp) to monitor plasma impedance viewed from a plasma generating power source, and an impedance monitor (Zb) to monitor a plasma impedance viewed from a bias power supply, presence or absence of occurrence of an associated one of abnormal discharge in inner parts, deterioration in insulation of an insulating film of a wafer attracting electrode, and abnormal injection in a gas injection plate.

摘要翻译： 一种等离子体处理装置，包括：室，具有保护膜的内壁和设置在室中的样品台，其中通过向处理气体提供高频波能以对样品台进行等离子体处理 使用等离子体。 该装置包括控制装置，其基于监视从晶片吸引电源提供的电流的晶片吸引电流监视器（Ip）的值来确定阻抗监视器（Zp），以监测从等离子体发生功率 源极和阻抗监视器（Zb），用于监视从偏置电源观察的等离子体阻抗，是否存在内部部分的异常放电相关联的一种，晶片吸引电极的绝缘膜的绝缘的劣化， 并在气体注射板中异常注入。

公开(公告)号：US07396771B2

公开(公告)日：2008-07-08

申请号：US11362867

申请日：2006-02-28

申请人： Go Miya ,  Seiichiro Kanno ,  Naoshi Itabashi ,  Motohiko Yoshigai ,  Junichi Tanaka ,  Masahito Mori ,  Naoyuki Kofuji ,  Go Saito

发明人： Go Miya ,  Seiichiro Kanno ,  Naoshi Itabashi ,  Motohiko Yoshigai ,  Junichi Tanaka ,  Masahito Mori ,  Naoyuki Kofuji ,  Go Saito

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01L21/67069 ,  H01J37/32449 ,  H01J37/32935 ,  H01L21/32137 ,  H01L21/67248 ,  H01L21/67253

摘要： A plasma etching apparatus includes a processing chamber in which a specimen is subjected to plasma processing, a specimen holder for holding the specimen, the specimen holder including a temperature controller for controlling temperatures at at least 2 positions of the specimen, at least two gas supply sources for supplying processing gases, at least two gas inlets for introducing the processing gases into the processing chamber, a regulator for independently controlling the compositions or the flow rates of the processing gases introduced from the at least two gas inlets and the temperatures controlled with at least two temperature controllers in the specimen holder, and an electromagnetic wave supply unit for sending an electromagnetic wave into the processing chamber, wherein the compositions or the flow rates of the processing gases introduced from the gas inlets and the temperature controlled with the temperature controllers in the specimen holder are independently controlled.

摘要翻译： 一种等离子体蚀刻装置，包括：处理室，其中试样经受等离子体处理;试样保持器，用于保持试样;试样架包括用于控制试样至少2个位置的温度的温度控制器，至少两个气体供应 用于提供处理气体的源，用于将处理气体引入处理室的至少两个气体入口，用于独立地控制从至少两个气体入口引入的处理气体的组成或流速的调节器和由 样品架中的至少两个温度控制器和用于将电磁波发送到处理室中的电磁波供给单元，其中从气体入口引入的处理气体的组成或流速以及用温度控制器控制的温度 样品架独立控制。

公开(公告)号：US20080121344A1

公开(公告)日：2008-05-29

申请号：US12023874

申请日：2008-01-31

申请人： Tooru Aramaki ,  Tsunehiko Tsubone ,  Ryujiro Udo ,  Motohiko Yoshigai ,  Takashi Fujii

发明人： Tooru Aramaki ,  Tsunehiko Tsubone ,  Ryujiro Udo ,  Motohiko Yoshigai ,  Takashi Fujii

IPC分类号： C23F1/00 ,  C23C16/513

CPC分类号： C23C16/4581 ,  C23C16/4586 ,  C23C16/46 ,  H01J2237/2001 ,  H01L21/67109 ,  H01L21/6719

摘要： A plasma processing method for processing a sample by reducing a pressure within a processing chamber, including mounting the sample on a sample holder disposed in the processing chamber, and processing using a plasma generated in the processing chamber above the sample holder while supplying a gas for heat transfer to a space between a surface of the sample holder having the sample mounted thereon and a rear surface of the sample. The sample holder has a plurality of substantially ring-shaped depressed portions at the surface where the sample is mounted. A pressure in a space between the depressed portions arranged at a central portion of the sample holder with respect to outer circumferential portion and the sample is set to be lower than a pressure in a space between the depressed portions at the outer circumferential portion and the sample.

摘要翻译： 一种用于通过减小处理室内的压力来处理样品的等离子体处理方法，包括将样品安装在设置在处理室中的样本保持器上，以及使用在样品架上方的处理室中产生的等离子体进行处理，同时为 热传递到安装有样品的样品保持器的表面与样品的后表面之间的空间。 样品保持器在样品安装的表面具有多个基本环形的凹陷部分。 设置在样品保持架的中心部分相对于外周部分的凹陷部分和样品之间的空间中的压力被设定为低于外周部分的凹陷部分和样品之间的空间中的压力 。

公开(公告)号：US20060132798A1

公开(公告)日：2006-06-22

申请号：US11340559

申请日：2006-01-27

申请人： Tatehito Usui ,  Takashi Fujii ,  Motohiko Yoshigai ,  Tetsunori Kaji ,  Hideyuki Yamamoto

发明人： Tatehito Usui ,  Takashi Fujii ,  Motohiko Yoshigai ,  Tetsunori Kaji ,  Hideyuki Yamamoto

IPC分类号： G01B11/02

CPC分类号： H01J37/32963 ,  G01B11/0675 ,  H01L22/26

摘要： Standard patterns of differential values of interference light that correspond to a predetermined step height of the first material being processed and standard patterns of differential values of interference light that correspond to a predetermined remaining mask layer thickness of the material are set. These standard patterns use wavelengths as parameters. Then, the intensities of interference light of multiple wavelengths are measured for a second material that has the same structure as the first material. Actual patterns with wavelength as parameter are determined from differential values of the measured interference light intensities. Based on the standard patterns and the actual patterns of the differential values, the step height and the remaining mask layer thickness of the second material are determined.

摘要翻译： 对应于正在处理的第一材料的预定台阶高度的干涉光的差分值的标准图案和对应于材料的预定剩余掩模层厚度的干涉光的差分值的标准图案被设置。 这些标准模式使用波长作为参数。 然后，测量具有与第一材料相同结构的第二材料的多个波长的干涉光的强度。 具有波长作为参数的实际图案由所测量的干涉光强度的差分值确定。 基于标准图案和差分值的实际图案，确定第二材料的台阶高度和剩余掩模层厚度。

公开(公告)号：US20060073619A1

公开(公告)日：2006-04-06

申请号：US11293213

申请日：2005-12-05

申请人： Tatehito Usui ,  Motohiko Yoshigai ,  Tsuyoshi Yoshida ,  Hideyuki Yamamoto

发明人： Tatehito Usui ,  Motohiko Yoshigai ,  Tsuyoshi Yoshida ,  Hideyuki Yamamoto

IPC分类号： H01L21/00 ,  H01L21/306 ,  C23F1/00

CPC分类号： H01J37/32935 ,  H01L21/31116

摘要： In a semiconductor device fabrication apparatus for performing an etching process for a semiconductor wafer having a plurality of films formed on a surface thereof and disposed in a chamber, by using plasma generated in the chamber, a change in light of multi-wavelength from the surface of the semiconductor wafer is measured during a predetermined period of the etching process, and a state of the etching process is judged from the displayed change amount of light of multi-wavelength.

摘要翻译： 在半导体器件制造装置中，通过使用在室内产生的等离子体，对具有形成在其表面上的多个膜并且设置在室中的半导体晶片进行蚀刻处理，从表面的多波长的光的变化 在蚀刻处理的预定周期期间测量半导体晶片，并且根据所显示的多波长的光的变化量来判断蚀刻处理的状态。

公开(公告)号：US07009715B2

公开(公告)日：2006-03-07

申请号：US10978412

申请日：2004-11-02

申请人： Tatehito Usui ,  Takashi Fujii ,  Motohiko Yoshigai ,  Tetsunori Kaji ,  Hideyuki Yamamoto

发明人： Tatehito Usui ,  Takashi Fujii ,  Motohiko Yoshigai ,  Tetsunori Kaji ,  Hideyuki Yamamoto

IPC分类号： G01B9/02

CPC分类号： H01J37/32963 ,  G01B11/0675 ,  H01L22/26

摘要： Standard patterns of differential values of interference light that correspond to a predetermined step height of the first material being processed and standard patterns of differential values of interference light that correspond to a predetermined remaining mask layer thickness of the material are set. These standard patterns use wavelengths as parameters. Then, the intensities of interference light of multiple wavelengths are measured for a second material that has the same structure as the first material. Actual patterns with wavelength as parameter are determined from differential values of the measured interference light intensities. Based on the standard patterns and the actual patterns of the differential values, the step height and the remaining mask layer thickness of the second material are determined.