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1.发明授权Process for producing a semiconductor device including etching using a multi-step etching treatment having different gas compositions in each step 失效在各工序中，使用具有不同气体成分的多步骤蚀刻处理的半导体装置的制造方法公开(公告)号：US06743733B2
公开(公告)日：2004-06-01
申请号：US09946507
申请日：2001-09-06
IPC分类号： H01L21302
CPC分类号： H01L21/32137 , Y10S438/905 , Y10S438/907
摘要： By conducting etching treatment using at least two steps with different compositions of gases for each step, and at least one step comprising using a gas capable of decomposing and vaporizing etching products in an etching apparatus continuously, semicondictor devices can be produced with high productivity, low contaminant and good reproducibility of treatment state.
摘要翻译： 通过使用至少两个步骤对每个步骤进行具有不同组成的气体的至少两个步骤的蚀刻处理，以及包括使用能够在蚀刻装置中连续分解和蒸发蚀刻产物的气体的至少一个步骤，可以以高生产率，低生产率生产半衰减器件 污染物和处理状态的良好重复性。
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2.发明授权Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method 有权使用发射光谱处理的部件的膜厚测量方法和使用该测量方法的部件的处理方法公开(公告)号：US07230720B2
公开(公告)日：2007-06-12
申请号：US11256967
申请日：2005-10-25
CPC分类号： G01B11/0675 , G01B11/0625 , H01L21/67069 , H01L22/26 , Y10T436/106664
摘要： A standard pattern of a differential value of an interference light is set with respect to a predetermined film thickness of a first member to be processed. The standard pattern uses a wavelength as a parameter. Then, an intensity of an interference light of a second member to be processed, composed just like the first member, is measured with respect to each of a plurality of wavelengths so as to obtain a real pattern of an differential value of the measured interference light intensity. The real pattern also uses a wavelength as a parameter. Then, the film thickness of the second member is obtained according to the standard pattern and the real pattern of the differential value.
摘要翻译： 干涉光的微分值的标准图案相对于待处理的第一部件的预定膜厚设定。 标准图案使用波长作为参数。 然后，对于多个波长中的每一个测量与第一构件正好相同的待处理的第二构件的干涉光的强度，以获得所测量的干涉光的差分值的实际图案 强度。 实际图案也使用波长作为参数。 然后，根据标准图案和差分值的实际图案获得第二构件的膜厚度。
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3.发明授权Method and apparatus for determining endpoint of semiconductor element fabricating process 有权用于确定半导体元件制造工艺的端点的方法和装置公开(公告)号：US06903826B2
公开(公告)日：2005-06-07
申请号：US09946504
申请日：2001-09-06
CPC分类号： H01J37/32963 , G01B11/0675 , H01L22/26
摘要： Standard patterns of differential values of interference light that correspond to a predetermined step height of the first material being processed and standard patterns of differential values of interference light that correspond to a predetermined remaining mask layer thickness of the material are set. These standard patterns use wavelengths as parameters. Then, the intensities of interference light of multiple wavelengths are measured for a second material that has the same structure as the first material. Actual patterns with wavelength as parameter are determined from differential values of the measured interference light intensities. Based on the standard patterns and the actual patterns of the differential values, the step height and the remaining mask layer thickness of the second material are determined.
摘要翻译： 对应于正在处理的第一材料的预定台阶高度的干涉光的差分值的标准图案和对应于材料的预定剩余掩模层厚度的干涉光的差分值的标准图案被设置。 这些标准模式使用波长作为参数。 然后，测量具有与第一材料相同结构的第二材料的多个波长的干涉光的强度。 具有波长作为参数的实际图案由所测量的干涉光强度的差分值确定。 基于标准图案和差分值的实际图案，确定第二材料的台阶高度和剩余掩模层厚度。
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4.发明申请Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method 有权使用发射光谱处理的部件的膜厚测量方法和使用该测量方法的部件的处理方法公开(公告)号：US20050018207A1
公开(公告)日：2005-01-27
申请号：US10918367
申请日：2004-08-16
CPC分类号： G01B11/0675 , G01B11/0625 , H01L21/67069 , H01L22/26 , Y10T436/106664
摘要： A standard pattern of a differential value of an interference light is set with respect to a predetermined film thickness of a first member to be processed. The standard pattern uses a wavelength as a parameter. Then, an intensity of an interference light of a second member to be processed, composed just like the first member, is measured with respect to each of a plurality of wavelengths so as to obtain a real pattern of an differential value of the measured interference light intensity. The real pattern also uses a wavelength as a parameter. Then, the film thickness of the second member is obtained according to the standard pattern and the real pattern of the differential value.
摘要翻译： 干涉光的微分值的标准图案相对于待处理的第一部件的预定膜厚设定。 标准图案使用波长作为参数。 然后，对于多个波长中的每一个测量与第一构件正好相同的待处理的第二构件的干涉光的强度，以获得所测量的干涉光的差分值的实际图案 强度。 实际图案也使用波长作为参数。 然后，根据标准图案和差分值的实际图案获得第二构件的膜厚度。
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公开(公告)号：US07303998B2
公开(公告)日：2007-12-04
申请号：US11002265
申请日：2004-12-03
IPC分类号： H01L21/302
CPC分类号： C23C16/4581 , C23C16/4586 , C23C16/46 , H01J2237/2001 , H01L21/67109 , H01L21/6719
摘要： A plasma processing method for processing a sample by reducing a pressure within a processing chamber, including mounting the sample on a sample holder disposed in the processing chamber, and processing using a plasma generated in the processing chamber above the sample holder while supplying a gas for heat transfer to a space between a surface of the sample holder having the sample mounted thereon and a rear surface of the sample. The sample holder has a plurality of substantially ring-shaped depressed portions at the surface where the sample is mounted. A pressure in a space between the depressed portions arranged at a central portion of the sample holder with respect to outer circumferential portion and the sample is set to be lower than a pressure in a space between the depressed portions at the outer circumferential portion and the sample.
摘要翻译： 一种用于通过减小处理室内的压力来处理样品的等离子体处理方法，包括将样品安装在设置在处理室中的样本保持器上，以及使用在样品架上方的处理室中产生的等离子体进行处理，同时为 热传递到安装有样品的样品保持器的表面与样品的后表面之间的空间。 样品保持器在样品安装的表面具有多个基本环形的凹陷部分。 设置在样品保持架的中心部分相对于外周部分的凹陷部分和样品之间的空间中的压力被设定为低于外周部分的凹陷部分和样品之间的空间中的压力 。
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公开(公告)号：US5290993A
公开(公告)日：1994-03-01
申请号：US890184
申请日：1992-05-29
IPC分类号： C23C14/34 , C23C16/50 , C23C16/511 , C23F4/00 , C30B25/02 , C30B25/08 , H01J37/32 , H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/46 , B23K9/00
CPC分类号： H01J37/3244 , H01J37/32192 , H01J37/32559 , H01J37/32706 , H05H1/46
摘要： A microwave plasma processing device is composed of a vacuum chamber which is evacuated to a predetermined pressure and into which processing gas is introduced; a sample table disposed in the vacuum chamber to which an AC voltage is applied; a microwave generating apparatus which generates microwaves and introduces the microwaves towards a surface to be processed of a sample located on the sample table; a magnetic field generating apparatus for generating a magnetic field in the vacuum chamber; an insulator disposed on a part exposed to plasma produced in the vacuum chamber; and a ground electrode disposed at a place which is on a microwave introduction side with respect to the surface of the sample table on which the sample is placed. The ground electrode arranged in an insulator exposed to the plasma is protected by covering the surface of the ground electrode by an insulating film which is so thin that application of an AC voltage is not prevented. In this way the AC voltage is applied at a place where efficiency is high, and stable plasma processing can be effected.
摘要翻译： 微波等离子体处理装置由抽真空至预定压力的真空室构成，并将加工气体引入该真空室; 设置在施加有交流电压的真空室中的样品台; 微波产生装置，其产生微波并将微波引导到位于样品台上的样品待处理表面; 用于在真空室中产生磁场的磁场产生装置; 设置在暴露于在真空室中产生的等离子体的部分上的绝缘体; 以及设置在相对于其上放置有样品的样品台的表面的微波引入侧的位置处的接地电极。 布置在暴露于等离子体的绝缘体中的接地电极通过用非常薄的绝缘膜覆盖接地电极的表面来保护，从而不会阻止施加AC电压。 以这种方式，在效率高的地方施加AC电压，并且可以实现稳定的等离子体处理。
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公开(公告)号：US20080121344A1
公开(公告)日：2008-05-29
申请号：US12023874
申请日：2008-01-31
IPC分类号： C23F1/00 , C23C16/513
CPC分类号： C23C16/4581 , C23C16/4586 , C23C16/46 , H01J2237/2001 , H01L21/67109 , H01L21/6719
摘要： A plasma processing method for processing a sample by reducing a pressure within a processing chamber, including mounting the sample on a sample holder disposed in the processing chamber, and processing using a plasma generated in the processing chamber above the sample holder while supplying a gas for heat transfer to a space between a surface of the sample holder having the sample mounted thereon and a rear surface of the sample. The sample holder has a plurality of substantially ring-shaped depressed portions at the surface where the sample is mounted. A pressure in a space between the depressed portions arranged at a central portion of the sample holder with respect to outer circumferential portion and the sample is set to be lower than a pressure in a space between the depressed portions at the outer circumferential portion and the sample.
摘要翻译： 一种用于通过减小处理室内的压力来处理样品的等离子体处理方法，包括将样品安装在设置在处理室中的样本保持器上，以及使用在样品架上方的处理室中产生的等离子体进行处理，同时为 热传递到安装有样品的样品保持器的表面与样品的后表面之间的空间。 样品保持器在样品安装的表面具有多个基本环形的凹陷部分。 设置在样品保持架的中心部分相对于外周部分的凹陷部分和样品之间的空间中的压力被设定为低于外周部分的凹陷部分和样品之间的空间中的压力 。
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8.发明申请Method and apparatus for determining endpoint of semiconductor element fabricating process 有权用于确定半导体元件制造工艺的端点的方法和装置公开(公告)号：US20060132798A1
公开(公告)日：2006-06-22
申请号：US11340559
申请日：2006-01-27
IPC分类号： G01B11/02
CPC分类号： H01J37/32963 , G01B11/0675 , H01L22/26
摘要： Standard patterns of differential values of interference light that correspond to a predetermined step height of the first material being processed and standard patterns of differential values of interference light that correspond to a predetermined remaining mask layer thickness of the material are set. These standard patterns use wavelengths as parameters. Then, the intensities of interference light of multiple wavelengths are measured for a second material that has the same structure as the first material. Actual patterns with wavelength as parameter are determined from differential values of the measured interference light intensities. Based on the standard patterns and the actual patterns of the differential values, the step height and the remaining mask layer thickness of the second material are determined.
摘要翻译： 对应于正在处理的第一材料的预定台阶高度的干涉光的差分值的标准图案和对应于材料的预定剩余掩模层厚度的干涉光的差分值的标准图案被设置。 这些标准模式使用波长作为参数。 然后，测量具有与第一材料相同结构的第二材料的多个波长的干涉光的强度。 具有波长作为参数的实际图案由所测量的干涉光强度的差分值确定。 基于标准图案和差分值的实际图案，确定第二材料的台阶高度和剩余掩模层厚度。
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公开(公告)号：US07009715B2
公开(公告)日：2006-03-07
申请号：US10978412
申请日：2004-11-02
IPC分类号： G01B9/02
CPC分类号： H01J37/32963 , G01B11/0675 , H01L22/26
摘要： Standard patterns of differential values of interference light that correspond to a predetermined step height of the first material being processed and standard patterns of differential values of interference light that correspond to a predetermined remaining mask layer thickness of the material are set. These standard patterns use wavelengths as parameters. Then, the intensities of interference light of multiple wavelengths are measured for a second material that has the same structure as the first material. Actual patterns with wavelength as parameter are determined from differential values of the measured interference light intensities. Based on the standard patterns and the actual patterns of the differential values, the step height and the remaining mask layer thickness of the second material are determined.
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10.发明申请Method and apparatus for determining endpoint of semiconductor element fabricating process and method and apparatus for processing member to be processed 有权用于确定半导体元件制造工艺的端点的方法和装置以及用于处理待处理部件的方法和装置公开(公告)号：US20050062982A1
公开(公告)日：2005-03-24
申请号：US10978412
申请日：2004-11-02
CPC分类号： H01J37/32963 , G01B11/0675 , H01L22/26
摘要： Standard patterns of differential values of interference light that correspond to a predetermined step height of the first material being processed and standard patterns of differential values of interference light that correspond to a predetermined remaining mask layer thickness of the material are set. These standard patterns use wavelengths as parameters. Then, the intensities of interference light of multiple wavelengths are measured for a second material that has the same structure as the first material. Actual patterns with wavelength as parameter are determined from differential values of the measured interference light intensities. Based on the standard patterns and the actual patterns of the differential values, the step height and the remaining mask layer thickness of the second material are determined.
摘要翻译： 对应于正在处理的第一材料的预定台阶高度的干涉光的差分值的标准图案和对应于材料的预定剩余掩模层厚度的干涉光的差分值的标准图案被设置。 这些标准模式使用波长作为参数。 然后，测量具有与第一材料相同结构的第二材料的多个波长的干涉光的强度。 具有波长作为参数的实际图案由所测量的干涉光强度的差分值确定。 基于标准图案和差分值的实际图案，确定第二材料的台阶高度和剩余掩模层厚度。
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