SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
    41.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号:US20110233585A1

    公开(公告)日:2011-09-29

    申请号:US12817592

    申请日:2010-06-17

    摘要: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating film, a first interconnection, a second interconnection, a first metal pillar, a second metal pillar, a resin, and a fluorescent layer. The semiconductor layer has a first major surface, a second major surface formed on an opposite side to the first major surface, and a light emitting layer. The first electrode and the second electrode are provided on the second major surface of the semiconductor layer. The fluorescent layer faces to the first major surface of the semiconductor layer and includes a plurality of kinds of fluorescent materials having different peak wavelengths of emission light.

    摘要翻译: 根据一个实施例,半导体发光器件包括半导体层,第一电极,第二电极,绝缘膜,第一互连,第二互连,第一金属柱,第二金属柱,树脂和 荧光层。 半导体层具有第一主表面,与第一主表面相反的一侧形成的第二主表面和发光层。 第一电极和第二电极设置在半导体层的第二主表面上。 荧光层面向半导体层的第一主表面,并且包括发射光的不同峰值波长的多种荧光材料。