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    Light emitting device
    1.
    发明授权
    Light emitting device 失效
    发光装置

    公开(公告)号：US08378377B2

    公开(公告)日：2013-02-19

    申请号：US12885721

    申请日：2010-09-20

    申请人： Yoshiaki Sugizaki ,  Hideki Shibata ,  Akihiro Kojima ,  Masayuki Ishikawa ,  Hideo Tamura ,  Tetsuro Komatsu

    发明人： Yoshiaki Sugizaki ,  Hideki Shibata ,  Akihiro Kojima ,  Masayuki Ishikawa ,  Hideo Tamura ,  Tetsuro Komatsu

    IPC分类号： H01L33/00

    CPC分类号： H01L33/647 ,  H01L27/153 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0066

    摘要： According to one embodiment, a light emitting device includes a light emitting chip, an external terminal made of a metal material, and a circuit board. The light emitting chip is mounted on the circuit board via the external terminal. The light emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnection layer, a second interconnection layer, a first metal pillar, a second metal pillar and a resin layer. The circuit board includes an interconnection bonded to the first metal pillar and the second metal pillar via the external terminal, and a heat radiation material provided on an opposite side of the interconnection and connected to the interconnection.

    摘要翻译： 根据一个实施例，发光器件包括发光芯片，由金属材料制成的外部端子和电路板。 发光芯片通过外部端子安装在电路板上。 发光芯片包括半导体层，第一电极，第二电极，绝缘层，第一互连层，第二互连层，第一金属柱，第二金属柱和树脂层。 电路板包括经由外部端子与第一金属柱和第二金属柱接合的互连以及设置在互连的相对侧并连接到互连的散热材料。

    Method for manufacturing light emitting device and light emitting device
    2.
    发明授权
    Method for manufacturing light emitting device and light emitting device 失效
    制造发光器件和发光器件的方法

    公开(公告)号：US08377726B2

    公开(公告)日：2013-02-19

    申请号：US12832275

    申请日：2010-07-08

    申请人： Akihiro Kojima ,  Yoshiaki Sugizaki ,  Hideki Shibata ,  Hideo Tamura ,  Tetsuro Komatsu ,  Masayuki Ishikawa

    发明人： Akihiro Kojima ,  Yoshiaki Sugizaki ,  Hideki Shibata ,  Hideo Tamura ,  Tetsuro Komatsu ,  Masayuki Ishikawa

    IPC分类号： H01L21/66

    CPC分类号： H01L33/0079 ,  H01L33/38 ,  H01L33/44 ,  H01L33/486 ,  H01L33/50 ,  H01L33/502 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/16

    摘要： According to one embodiment, a light emitting device includes a stacked body, a p-side and n-side electrodes, an insulating film, a p-side extraction electrode, an n-side extraction electrode, a resin layer and a phosphor layer. The stacked body has a first and a second surface opposite to each other and includes a light emitting layer. A p-side and an n-side electrode are provided on the second surface. An insulating film has openings to which the p-side and n-side electrodes are exposed. A p-side extraction electrode includes a p-side seed metal and a p-side metal wiring layer. An n-side extraction electrode includes an n-side seed metal and an n-side metal wiring layer. A resin layer is filled around the p-side and n-side extraction electrodes, and a phosphor layer is provided on a side of the first surface. Emission light from the light emitting layer is emitted through the first surface.

    摘要翻译： 根据一个实施例，发光器件包括层叠体，p侧和n侧电极，绝缘膜，p侧引出电极，n侧引出电极，树脂层和荧光体层。 层叠体具有彼此相对的第一和第二表面，并且包括发光层。 p侧和n侧电极设置在第二表面上。 绝缘膜具有露出p侧和n侧电极的开口。 p侧引出电极包括p侧金属和p侧金属配线层。 n侧引出电极包括n侧籽晶和n侧金属布线层。 在p侧和n侧引出电极周围填充有树脂层，在第一面的一侧设置有荧光体层。 来自发光层的发射光通过第一表面发射。

    Semiconductor light emitting device and method for manufacturing same
    6.
    发明授权
    Semiconductor light emitting device and method for manufacturing same 有权
    半导体发光器件及其制造方法

    公开(公告)号：US08436378B2

    公开(公告)日：2013-05-07

    申请号：US12817592

    申请日：2010-06-17

    申请人： Akihiro Kojima ,  Yoshiaki Sugizaki ,  Hideki Shibata ,  Hideo Tamura ,  Tetsuro Komatsu ,  Masayuki Ishikawa

    发明人： Akihiro Kojima ,  Yoshiaki Sugizaki ,  Hideki Shibata ,  Hideo Tamura ,  Tetsuro Komatsu ,  Masayuki Ishikawa

    IPC分类号： H01L33/00

    CPC分类号： H01L33/486 ,  H01L33/50 ,  H01L33/504 ,  H01L2224/16

    摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating film, a first interconnection, a second interconnection, a first metal pillar, a second metal pillar, a resin, and a fluorescent layer. The semiconductor layer has a first major surface, a second major surface formed on an opposite side to the first major surface, and a light emitting layer. The first electrode and the second electrode are provided on the second major surface of the semiconductor layer. The fluorescent layer faces to the first major surface of the semiconductor layer and includes a plurality of kinds of fluorescent materials having different peak wavelengths of emission light.

    摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，绝缘膜，第一互连，第二互连，第一金属柱，第二金属柱，树脂和 荧光层。 半导体层具有第一主表面，与第一主表面相反的一侧形成的第二主表面和发光层。 第一电极和第二电极设置在半导体层的第二主表面上。 荧光层面向半导体层的第一主表面，并且包括发射光的不同峰值波长的多种荧光材料。

    Semiconductor light emitting device
    7.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US08373192B2

    公开(公告)日：2013-02-12

    申请号：US12883745

    申请日：2010-09-16

    申请人： Yoshiaki Sugizaki ,  Hideki Shibata ,  Akihiro Kojima ,  Masayuki Ishikawa ,  Hideo Tamura ,  Tetsuro Komatsu

    发明人： Yoshiaki Sugizaki ,  Hideki Shibata ,  Akihiro Kojima ,  Masayuki Ishikawa ,  Hideo Tamura ,  Tetsuro Komatsu

    IPC分类号： H01L33/00

    CPC分类号： H01L25/0753 ,  H01L33/0079 ,  H01L33/508 ,  H01L33/58 ,  H01L2224/11 ,  H01L2924/0002 ,  H01L2924/3511 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

    摘要： According to one embodiment, a semiconductor light emitting device includes a plurality of semiconductor layers, a first electrode, a second electrode, an insulating layer, a first interconnection layer, a second interconnection layer, a first metal pillar, a second metal pillar and a resin layer, and is mounted in a bent state on a curved surface. The plurality of semiconductor layers includes a first main surface, a second main surface opposite to the first main surface, and a light emitting layer, the plurality of semiconductor layers being separated from one another. A material is provided between the plurality of the semiconductor layers separated from one another. The member has a higher flexibility than the semiconductor layers being.

    摘要翻译： 根据一个实施例，半导体发光器件包括多个半导体层，第一电极，第二电极，绝缘层，第一互连层，第二互连层，第一金属柱，第二金属柱和 树脂层，并且以弯曲状态安装在弯曲表面上。 多个半导体层包括第一主表面，与第一主表面相对的第二主表面和发光层，所述多个半导体层彼此分离。 在彼此分离的多个半导体层之间提供材料。 该构件具有比半导体层更高的柔性。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    8.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20110297994A1

    公开(公告)日：2011-12-08

    申请号：US12883745

    申请日：2010-09-16

    申请人： Yoshiaki Sugizaki ,  Hideki Shibata ,  Akihiro Kojima ,  Masayuki Ishikawa ,  Hideo Tamura ,  Tetsuro Komatsu

    发明人： Yoshiaki Sugizaki ,  Hideki Shibata ,  Akihiro Kojima ,  Masayuki Ishikawa ,  Hideo Tamura ,  Tetsuro Komatsu

    IPC分类号： H01L33/00

    CPC分类号： H01L25/0753 ,  H01L33/0079 ,  H01L33/508 ,  H01L33/58 ,  H01L2224/11 ,  H01L2924/0002 ,  H01L2924/3511 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

    摘要： According to one embodiment, a semiconductor light emitting device includes a plurality of semiconductor layers, a first electrode, a second electrode, an insulating layer, a first interconnection layer, a second interconnection layer, a first metal pillar, a second metal pillar and a resin layer, and is mounted in a bent state on a curved surface. The plurality of semiconductor layers includes a first main surface, a second main surface opposite to the first main surface, and a light emitting layer, the plurality of semiconductor layers being separated from one another. A material is provided between the plurality of the semiconductor layers separated from one another. The member has a higher flexibility than the semiconductor layers being.

    摘要翻译： 根据一个实施例，半导体发光器件包括多个半导体层，第一电极，第二电极，绝缘层，第一互连层，第二互连层，第一金属柱，第二金属柱和 树脂层，并且以弯曲状态安装在弯曲表面上。 多个半导体层包括第一主表面，与第一主表面相对的第二主表面和发光层，所述多个半导体层彼此分离。 在彼此分离的多个半导体层之间提供材料。 该构件具有比半导体层更高的柔性。

    METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE
    9.
    发明申请
    METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE 失效
    制造发光装置和发光装置的方法

    公开(公告)号：US20110233586A1

    公开(公告)日：2011-09-29

    申请号：US12832275

    申请日：2010-07-08

    申请人： Akihiro Kojima ,  Yoshiaki Sugizaki ,  Hideki Shibata ,  Hideo Tamura ,  Tetsuro Komatsu ,  Masayuki Ishikawa

    发明人： Akihiro Kojima ,  Yoshiaki Sugizaki ,  Hideki Shibata ,  Hideo Tamura ,  Tetsuro Komatsu ,  Masayuki Ishikawa

    IPC分类号： H01L33/50 ,  H01L33/52

    CPC分类号： H01L33/0079 ,  H01L33/38 ,  H01L33/44 ,  H01L33/486 ,  H01L33/50 ,  H01L33/502 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/16

    摘要： According to one embodiment, a light emitting device includes a stacked body, a p-side and n-side electrodes, an insulating film, a p-side extraction electrode, an n-side extraction electrode, a resin layer and a phosphor layer. The stacked body has a first and a second surface opposite to each other and includes a light emitting layer. A p-side and an n-side electrode are provided on the second surface. An insulating film has openings to which the p-side and n-side electrodes are exposed. A p-side extraction electrode includes a p-side seed metal and a p-side metal wiring layer. An n-side extraction electrode includes an n-side seed metal and an n-side metal wiring layer. A resin layer is filled around the p-side and n-side extraction electrodes, and a phosphor layer is provided on a side of the first surface. Emission light from the light emitting layer is emitted through the first surface.

    摘要翻译： 根据一个实施例，发光器件包括层叠体，p侧和n侧电极，绝缘膜，p侧引出电极，n侧引出电极，树脂层和荧光体层。 层叠体具有彼此相对的第一和第二表面，并且包括发光层。 p侧和n侧电极设置在第二表面上。 绝缘膜具有露出p侧和n侧电极的开口。 p侧引出电极包括p侧金属和p侧金属配线层。 n侧引出电极包括n侧籽晶和n侧金属布线层。 在p侧和n侧引出电极周围填充有树脂层，在第一面的一侧设置有荧光体层。 来自发光层的发射光通过第一表面发射。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
    10.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20110233585A1

    公开(公告)日：2011-09-29

    申请号：US12817592

    申请日：2010-06-17

    申请人： Akihiro Kojima ,  Yoshiaki Sugizaki ,  Hideki Shibata ,  Hideo Tamura ,  Tetsuro Komatsu ,  Masayuki Ishikawa

    发明人： Akihiro Kojima ,  Yoshiaki Sugizaki ,  Hideki Shibata ,  Hideo Tamura ,  Tetsuro Komatsu ,  Masayuki Ishikawa

    IPC分类号： H01L33/44 ,  H01L33/00 ,  H01L21/78 ,  H01L33/36

    CPC分类号： H01L33/486 ,  H01L33/50 ,  H01L33/504 ,  H01L2224/16

    摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating film, a first interconnection, a second interconnection, a first metal pillar, a second metal pillar, a resin, and a fluorescent layer. The semiconductor layer has a first major surface, a second major surface formed on an opposite side to the first major surface, and a light emitting layer. The first electrode and the second electrode are provided on the second major surface of the semiconductor layer. The fluorescent layer faces to the first major surface of the semiconductor layer and includes a plurality of kinds of fluorescent materials having different peak wavelengths of emission light.

    摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，绝缘膜，第一互连，第二互连，第一金属柱，第二金属柱，树脂和 荧光层。 半导体层具有第一主表面，与第一主表面相反的一侧形成的第二主表面和发光层。 第一电极和第二电极设置在半导体层的第二主表面上。 荧光层面向半导体层的第一主表面，并且包括发射光的不同峰值波长的多种荧光材料。