公开(公告)号：US5629887A

公开(公告)日：1997-05-13

申请号：US429638

申请日：1995-04-27

申请人： Hiroaki Nakano ,  Daisaburo Takashima ,  Tohru Ozaki

发明人： Hiroaki Nakano ,  Daisaburo Takashima ,  Tohru Ozaki

IPC分类号： G11C11/4097 ,  H01L23/522 ,  H01L27/108 ,  G11C5/02 ,  G11C5/06

CPC分类号： G11C11/4097 ,  H01L23/5222 ,  H01L27/10805 ,  H01L2924/0002

摘要： A dynamic semiconductor memory device according to the present invention, comprises a plurality of first bit lines, a plurality of second bit lines which are partially laminated above the first bit lines and, together with the first bit lines, form bit-line pairs to build a folded bit-line structure, a plurality of word lines arranged so as to cross the first bit lines and the second bit lines, and at least one memory cell array in which a plurality of memory cells connected to the first bit lines and the second bit lines are arranged in a matrix, wherein the memory cell array includes a plurality of first areas in which a plurality of memory cells are arranged, and a plurality of second memory areas which are arranged so as to alternate with the first areas and contain no memory cell, and the second memory areas include areas where the first bit lines of the specified number of the bit-line pairs are connected to the second bit lines and the second bit lines are connected to the first bit lines.

摘要翻译： 根据本发明的动态半导体存储器件包括多个第一位线，多个第二位线，其部分地层叠在第一位线上方，并与第一位线一起形成位线对以构建 折叠的位线结构，布置成跨越第一位线和第二位线的多个字线，以及至少一个存储单元阵列，其中多个存储单元连接到第一位线和第二位线 位线布置成矩阵，其中存储单元阵列包括多个第一区域，其中布置有多个存储单元;以及多个第二存储区域，其布置成与第一区域交替并且不包含 存储单元，并且第二存储器区域包括指定数量的位线对的第一位线连接到第二位线的区域，并且第二位线连接到第一位线 位线。

公开(公告)号：US5459793A

公开(公告)日：1995-10-17

申请号：US939837

申请日：1992-09-02

申请人： Satoshi Naoi ,  Tohru Ozaki

发明人： Satoshi Naoi ,  Tohru Ozaki

IPC分类号： A63B69/36 ,  G01S3/786 ,  G06T1/00 ,  G06T7/00 ,  G06T7/20 ,  H04N5/262 ,  H04N9/74 ,  G06K9/00

CPC分类号： H04N9/74 ,  G01S3/7864 ,  G06T7/20 ,  H04N5/2625

摘要： A motion analysis system utilizing an image processing technique includes a color marker attached to an object which is to be analyzed. Each color marker has a high directivity reflective member on a surface thereof, and the reflection member reflects light having a particular wavelength. A light source generates light for irradiation onto the color marker. A color TV camera aligned in roughly the same direction as that of the light source receives reflected light from the color marker and outputs a color image. A color extraction unit connected to the TV camera, extracts only a particular color from the color image produced by the TV camera. An area calculation unit connected to the color extraction unit, calculates the area of the particular color extracted by the color extraction unit. A diaphragm adjustment unit connected between the TV camera and the area calculation unit adjusts the diaphragm of the TV camera so as to make the area calculated by the area calculation unit equivalent to the actual color area of the color marker and a center of gravity calculation unit connected to the area calculation unit, calculates a position of the center of gravity of the particular color based on the area calculated by the area calculation unit.

摘要翻译： 利用图像处理技术的运动分析系统包括附着到待分析对象的颜色标记。 每个颜色标记在其表面上具有高方向性反射构件，并且反射构件反射具有特定波长的光。 光源产生用于照射到颜色标记上的光。 以与光源大致相同的方向排列的彩色电视摄像机接收来自颜色标记的反射光并输出彩色图像。 连接到TV摄像机的彩色提取单元，仅从TV摄像机产生的彩色图像中提取特定的颜色。 连接到颜色提取单元的区域计算单元计算由颜色提取单元提取的特定颜色的面积。 连接在TV摄像机和区域计算单元之间的光阑调节单元调节TV摄像机的光阑，以使得由区域计算单元计算的面积等于彩色标记的实际颜色面积和重心计算单元 连接到区域计算单元，基于由区域计算单元计算出的面积来计算特定颜色的重心位置。

公开(公告)号：US5319228A

公开(公告)日：1994-06-07

申请号：US617199

申请日：1990-11-23

申请人： Tohru Ozaki

发明人： Tohru Ozaki

IPC分类号： H01L21/76 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/10 ,  H01L27/108 ,  H01L29/94 ,  H01L29/68 ,  H01L29/78 ,  H01L29/92

CPC分类号： H01L29/945 ,  H01L27/10829 ,  Y10S257/908 ,  Y10S257/909 ,  Y10S257/91 ,  Y10S257/911

摘要： A semiconductor memory device having a trench-type capacitor configuration is provided. The device comprises an element isolation insulating film formed on the surface of the substrate in the vicinity of the trenches. The insulating film includes a thickness-reducing region to which the inclined end portion of the capacitor electrode is connected.

摘要翻译： 提供具有沟槽型电容器配置的半导体存储器件。 该器件包括在沟槽附近形成在衬底表面上的元件隔离绝缘膜。 绝缘膜包括连接电容器电极的倾斜端部的厚度减小区域。

公开(公告)号：US5218018A

公开(公告)日：1993-06-08

申请号：US635970

申请日：1990-12-31

申请人： Akira Tominaga ,  Reiziro Nishida ,  Hiroshi Inoue ,  Motoshi Yabuta ,  Yoshio Sasaki ,  Akira Kasari ,  Hiroshi Igarashi ,  Tohru Ozaki

发明人： Akira Tominaga ,  Reiziro Nishida ,  Hiroshi Inoue ,  Motoshi Yabuta ,  Yoshio Sasaki ,  Akira Kasari ,  Hiroshi Igarashi ,  Tohru Ozaki

IPC分类号： B05D7/00 ,  C08G59/20 ,  C08G59/68 ,  C09D5/38 ,  C09D163/00 ,  C09D201/06

CPC分类号： B05D7/532 ,  C08G59/20 ,  C08G59/68 ,  C09D163/00 ,  C09D201/06 ,  C09D5/38

摘要： A thermosetting coating composition comprising as essential components:(a) a hydroxyl group-containing base resin,(b) an alicyclic polyepoxide crosslinking agent, and(c) a catalyst selected from the group consisting of a quaternary ammonium hydroxide and a metal chelate.

摘要翻译： 一种热固性涂料组合物，其包含作为必要组分的（a）含羟基的基础树脂，（b）脂环族聚环氧化物交联剂和（c）选自季铵氢氧化物和金属螯合物的催化剂。

公开(公告)号：US07812384B2

公开(公告)日：2010-10-12

申请号：US12109817

申请日：2008-04-25

申请人： Tohru Ozaki

发明人： Tohru Ozaki

IPC分类号： H01G7/06

CPC分类号： H01L28/60 ,  G11C11/22 ,  H01L27/105 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55

摘要： According to an aspect of the present invention, there is provided a semiconductor device including: a transistor including: a source, a drain and a gate; first and second plugs on the source and the drain; a third plug on the gate to have a top face higher than that of the first plug; an interlayer insulating film covering the transistor and the first to the third plugs; a ferroelectric capacitor on the interlayer insulating film, one electrode thereof being connected to the first plug; a barrier film covering surfaces of the ferroelectric capacitor and the interlayer insulating film to prevent a substance affecting the ferroelectric capacitor from entering therethrough; and fourth and fifth plugs disposed on the second and the third plugs and connected thereto through connection holes formed in the barrier film.

摘要翻译： 根据本发明的一个方面，提供了一种半导体器件，包括：晶体管，包括：源极，漏极和栅极; 源极和漏极上的第一和第二插头; 栅极上的第三个插头具有高于第一插头的顶面; 覆盖晶体管和第一至第三插头的层间绝缘膜; 层间绝缘膜上的铁电电容器，其一个电极连接到第一插头; 覆盖铁电电容器和层间绝缘膜的表面的阻挡膜，以防止影响铁电电容器的物质进入其中; 以及设置在第二和第三插头上的第四和第五插头，并且通过形成在阻挡膜中的连接孔与其连接。

公开(公告)号：US07417274B2

公开(公告)日：2008-08-26

申请号：US11491907

申请日：2006-07-25

申请人： Tohru Ozaki ,  Yoshinori Kumura ,  Yoshiro Shimojo ,  Susumu Shuto

发明人： Tohru Ozaki ,  Yoshinori Kumura ,  Yoshiro Shimojo ,  Susumu Shuto

IPC分类号： H01L27/108

CPC分类号： H01L27/11507 ,  H01L21/76834 ,  H01L21/76888 ,  H01L27/11502 ,  H01L28/57 ,  H01L28/65

摘要： A semiconductor device comprises an insulation film that is provided on a semiconductor substrate, a first contact plug that is provided in the insulation film and includes a metal, a first adhesive film that is provided on the insulation film, has a higher oxygen affinity than the metal, and includes an oxide, a second adhesive film that is provided on the first contact plug and has a film thickness that is smaller than a film thickness of the first adhesive film, a first capacitor electrode that is provided on the contact plug and the first adhesive film, has a part in direct contact with the first contact plug, a capacitor insulation film that is provided on the first capacitor electrode, and a second capacitor electrode that is provided on the capacitor insulation film.

摘要翻译： 半导体器件包括设置在半导体衬底上的绝缘膜，设置在绝缘膜中并且包括金属的第一接触插塞，设置在绝缘膜上的第一粘合膜具有比该绝缘膜更高的氧亲和力 金属，并且包括氧化物，第二粘合膜，其设置在第一接触插塞上并且具有小于第一粘合膜的膜厚度的膜厚度;设置在接触插塞上的第一电容器电极和 第一粘合膜具有与第一接触插塞直接接触的部分，设置在第一电容器电极上的电容器绝缘膜和设置在电容器绝缘膜上的第二电容器电极。

公开(公告)号：US07348617B2

公开(公告)日：2008-03-25

申请号：US11288204

申请日：2005-11-29

申请人： Yoshinori Kumura ,  Tohru Ozaki ,  Susumu Shuto ,  Yoshiro Shimojo ,  Iwao Kunishima

发明人： Yoshinori Kumura ,  Tohru Ozaki ,  Susumu Shuto ,  Yoshiro Shimojo ,  Iwao Kunishima

IPC分类号： H01L29/94

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65

摘要： A semiconductor device comprising a ferroelectric capacitor having improved reliability is disclosed. According to one aspect of the present invention, it is provided a semiconductor device comprising a transistor formed on a semiconductor substrate, a ferroelectric capacitor formed above the transistor and comprising a lower electrode, a ferroelectric film and an upper electrode, a first hydrogen barrier film formed over the ferroelectric capacitor, an insulator formed over the first hydrogen barrier film, a contact plug disposed in the insulator and electrically connected with the upper electrode, a second hydrogen barrier film disposed between the contact plug and the insulator continuously, and a wiring connected with the contact plug.

摘要翻译： 公开了一种包括具有改善的可靠性的铁电电容器的半导体器件。 根据本发明的一个方面，提供了一种半导体器件，包括形成在半导体衬底上的晶体管，形成在晶体管上方的铁电电容器，包括下电极，铁电体膜和上电极，第一氢阻挡膜 形成在所述铁电电容器上，形成在所述第一氢阻挡膜上的绝缘体，设置在所述绝缘体中并与所述上电极电连接的接触插塞，连续地配置在所述接触插塞和所述绝缘体之间的第二氢阻挡膜， 与接触插头。

公开(公告)号：US20080061335A1

公开(公告)日：2008-03-13

申请号：US11898297

申请日：2007-09-11

申请人： Yoshinori Kumura ,  Tohru Ozaki ,  Iwao Kunishima

发明人： Yoshinori Kumura ,  Tohru Ozaki ,  Iwao Kunishima

IPC分类号： H01L27/108 ,  H01L21/8242

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： According to an aspect of the present invention, there is provided a semiconductor memory including a lower electrode, a first insulating region formed in the same layer as the lower electrode, a ferroelectric film formed on the lower electrode and on the first insulating region, an upper electrode formed on the ferroelectric film, a second insulating region formed in the same layer as the upper electrode and a transistor. The first insulating region partitions the lower electrode. The second insulating region partitions the upper electrode. The transistor includes a first impurity region connected to the lower electrode and a second impurity region connected to the upper electrode. At least one of the first insulating region and the second insulating region is formed by insulating the lower electrode or the upper electrode.

摘要翻译： 根据本发明的一个方面，提供了一种半导体存储器，包括下电极，与下电极形成在同一层中的第一绝缘区域，形成在下电极和第一绝缘区上的强电介质膜， 形成在强电介质膜上的上电极，形成在与上电极相同的层中的第二绝缘区域和晶体管。 第一绝缘区域分隔下电极。 第二绝缘区域分隔上电极。 晶体管包括连接到下电极的第一杂质区和连接到上电极的第二杂质区。 通过使下部电极或上部电极绝缘来形成第一绝缘区域和第二绝缘区域中的至少一个。

公开(公告)号：US20070054462A1

公开(公告)日：2007-03-08

申请号：US11491907

申请日：2006-07-25

申请人： Tohru Ozaki ,  Yoshinori Kumura ,  Yoshiro Shimojo ,  Susumu Shuto

发明人： Tohru Ozaki ,  Yoshinori Kumura ,  Yoshiro Shimojo ,  Susumu Shuto

IPC分类号： H01L21/20 ,  H01L21/8242 ,  H01L21/00

CPC分类号： H01L27/11507 ,  H01L21/76834 ,  H01L21/76888 ,  H01L27/11502 ,  H01L28/57 ,  H01L28/65

摘要： A semiconductor device comprises an insulation film that is provided on a semiconductor substrate, a first contact plug that is provided in the insulation film and includes a metal, a first adhesive film that is provided on the insulation film, has a higher oxygen affinity than the metal, and includes an oxide, a second adhesive film that is provided on the first contact plug and has a film thickness that is smaller than a film thickness of the first adhesive film, a first capacitor electrode that is provided on the contact plug and the first adhesive film, has a part in direct contact with the first contact plug, a capacitor insulation film that is provided on the first capacitor electrode, and a second capacitor electrode that is provided on the capacitor insulation film.

摘要翻译： 半导体器件包括设置在半导体衬底上的绝缘膜，设置在绝缘膜中并且包括金属的第一接触插塞，设置在绝缘膜上的第一粘合膜具有比该绝缘膜更高的氧亲和力 金属，并且包括氧化物，第二粘合膜，其设置在第一接触插塞上并且具有小于第一粘合膜的膜厚度的膜厚度;设置在接触插塞上的第一电容器电极和 第一粘合膜具有与第一接触插塞直接接触的部分，设置在第一电容器电极上的电容器绝缘膜和设置在电容器绝缘膜上的第二电容器电极。

公开(公告)号：US07091537B2

公开(公告)日：2006-08-15

申请号：US10933382

申请日：2004-09-03

申请人： Tohru Ozaki

发明人： Tohru Ozaki

IPC分类号： H01L29/76

CPC分类号： H01L27/1159 ,  H01L27/10817 ,  H01L27/10823 ,  H01L27/10876 ,  H01L27/11502 ,  H01L27/11585

摘要： A ferroelectric memory device includes a first trench formed in a semiconductor substrate and having a first depth, a second trench formed in the substrate and having a second depth, a first element isolation insulating film buried in the first trench, a first gate electrode formed in a lower region of the second trench, a first insulating film formed in an upper region of the second trench, first and second diffusion layers formed in the substrate on both side surface in the second trench, a first ferroelectric capacitor disposed on the first diffusion layer, a first contact disposed on the first ferroelectric capacitor, a first wiring layer disposed on the first contact, a second contact disposed on the second diffusion layer, and a second wiring layer disposed on the second contact and disposed in the same level as that of the first wiring layer.

摘要翻译： 铁电存储器件包括形成在半导体衬底中并具有第一深度的第一沟槽，形成在衬底中并具有第二深度的第二沟槽，埋在第一沟槽中的第一元件隔离绝缘膜，形成在第一沟槽中的第一栅电极 第二沟槽的下部区域，形成在第二沟槽的上部区域中的第一绝缘膜，在第二沟槽的两侧面上形成在基板中的第一和第二扩散层，设置在第一扩散层上的第一铁电电容器 设置在第一铁电电容器上的第一触点，设置在第一触点上的第一布线层，设置在第二扩散层上的第二触点和设置在第二触点上的第二布线层， 第一布线层。