公开(公告)号：US06787841B2

公开(公告)日：2004-09-07

申请号：US10650732

申请日：2003-08-29

申请人： Kazuo Yano ,  Tomoyuki Ishii ,  Takashi Hashimoto ,  Koichi Seki ,  Masakazu Aoki ,  Takeshi Sakata ,  Yoshinobu Nakagome ,  Kan Takeuchi

发明人： Kazuo Yano ,  Tomoyuki Ishii ,  Takashi Hashimoto ,  Koichi Seki ,  Masakazu Aoki ,  Takeshi Sakata ,  Yoshinobu Nakagome ,  Kan Takeuchi

IPC分类号： H01L2976

CPC分类号： B82Y10/00 ,  G11C11/22 ,  G11C11/404 ,  G11C16/02 ,  G11C16/0466 ,  G11C16/10 ,  G11C16/28 ,  G11C2216/06 ,  G11C2216/08 ,  H01L21/28273 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11551 ,  H01L27/1203 ,  H01L29/42328 ,  H01L29/513 ,  H01L29/66825 ,  H01L29/7613 ,  H01L29/785 ,  H01L29/7888

摘要： A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.

摘要翻译： 一种场效应半导体元件，其具有较少数量的元件和减小的面积，并能够自身存储数据，而不需要在低温下进行冷却;以及采用该半导体元件的存储器件。 栅极沟道电容被设置得如此小，以致捕获捕获一个电子或空穴是否可以根据半导体FET元件的电流的变化来明确且明显地被检测。 通过检测通过在陷阱中捕获电子或空穴而导致的半导体元件的阈值电压的变化，可以在室温下实现数据存储。

公开(公告)号：US06787835B2

公开(公告)日：2004-09-07

申请号：US10167754

申请日：2002-06-11

申请人： Bryan Atwood ,  Kazuo Yano ,  Tomoyuki Ishii ,  Taro Osabe ,  Kazumasa Yanagisawa ,  Takeshi Sakata

发明人： Bryan Atwood ,  Kazuo Yano ,  Tomoyuki Ishii ,  Taro Osabe ,  Kazumasa Yanagisawa ,  Takeshi Sakata

IPC分类号： H01L27108

CPC分类号： H01L27/105 ,  G11C11/405 ,  G11C11/406 ,  G11C11/4076 ,  G11C2207/2281 ,  G11C2207/229 ,  H01L27/0207 ,  H01L27/108 ,  H01L27/1203

摘要： A high integration dynamic random access memory is provided by this invention. Furthermore, a write method is provided such that the cell size of two- and three-transistor gain cell memories is reduced. A dynamic memory incorporating a thin-channel transistor as the write element such that long data storage retention is achieved in the memory devices of this invention. A dynamic memory cell having low operating power and high density is also realized by this invention.

摘要翻译： 本发明提供了高集成度的动态随机存取存储器。 此外，提供了一种写入方法，使得减少了双晶体管和三晶体管增益单元存储器的单元尺寸。 一种结合了作为写入元件的薄沟道晶体管的动态存储器，使得在本发明的存储器件中实现长的数据存储保持。 通过本发明也实现了具有低操作功率和高密度的动态存储单元。

公开(公告)号：US06555882B2

公开(公告)日：2003-04-29

申请号：US09943444

申请日：2001-08-31

申请人： Kazuo Yano ,  Tomoyuki Ishii ,  Takashi Hashimoto ,  Koichi Seki ,  Masakazu Aoki ,  Takeshi Sakata ,  Yoshinobu Nakagome ,  Kan Takeuchi

发明人： Kazuo Yano ,  Tomoyuki Ishii ,  Takashi Hashimoto ,  Koichi Seki ,  Masakazu Aoki ,  Takeshi Sakata ,  Yoshinobu Nakagome ,  Kan Takeuchi

IPC分类号： H01L2976

CPC分类号： B82Y10/00 ,  G11C11/22 ,  G11C11/404 ,  G11C16/02 ,  G11C16/0466 ,  G11C16/10 ,  G11C16/28 ,  G11C2216/06 ,  G11C2216/08 ,  H01L21/28273 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11551 ,  H01L27/1203 ,  H01L29/42328 ,  H01L29/513 ,  H01L29/66825 ,  H01L29/7613 ,  H01L29/785 ,  H01L29/7888

摘要： A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.

公开(公告)号：US6104056A

公开(公告)日：2000-08-15

申请号：US126437

申请日：1998-07-30

申请人： Kazuo Yano ,  Tomoyuki Ishii ,  Takashi Hashimoto ,  Koichi Seki ,  Masakazu Aoki ,  Takeshi Sakata ,  Yoshinobu Nakagome ,  Kan Takeuchi

发明人： Kazuo Yano ,  Tomoyuki Ishii ,  Takashi Hashimoto ,  Koichi Seki ,  Masakazu Aoki ,  Takeshi Sakata ,  Yoshinobu Nakagome ,  Kan Takeuchi

IPC分类号： H01L21/8247 ,  G11C11/22 ,  G11C11/404 ,  G11C16/02 ,  G11C16/04 ,  G11C16/28 ,  H01L21/28 ,  H01L21/336 ,  H01L27/01 ,  H01L27/115 ,  H01L29/423 ,  H01L29/51 ,  H01L29/66 ,  H01L29/76 ,  H01L29/788 ,  H01L29/792 ,  H01L29/94 ,  H01L31/036 ,  H01L31/062 ,  H01L31/112 ,  H01L31/113 ,  H01L21/119

CPC分类号： B82Y10/00 ,  G11C11/22 ,  G11C11/404 ,  G11C16/02 ,  G11C16/0466 ,  G11C16/10 ,  G11C16/28 ,  H01L21/28273 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11551 ,  H01L29/42328 ,  H01L29/513 ,  H01L29/66825 ,  H01L29/7613 ,  H01L29/7888 ,  G11C2216/06 ,  G11C2216/08 ,  H01L27/1203 ,  H01L29/785

摘要： A field-effect semiconductor element implemented with a reduced number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature. In accordance with one embodiment, a carrier confinement region, isolated from a channel and a gate of the semiconductor FET element, is provided to operate as a storage node for trapping the carrier or carriers.

摘要翻译： 一种场效应半导体元件，其具有减少的元件数量和减少的面积，并且能够自身存储数据，而不需要在低温下进行冷却;以及采用该半导体元件的存储器件。 栅极沟道电容被设置得如此小，以致捕获捕获一个电子或空穴是否可以根据半导体FET元件的电流的变化来明确且明显地被检测。 通过检测通过在陷阱中捕获电子或空穴而导致的半导体元件的阈值电压的变化，可以在室温下实现数据存储。 根据一个实施例，提供了从沟道分离的载流子限制区域和半导体FET元件的栅极，以用作捕获载体或载流子的存储节点。

公开(公告)号：US5600163A

公开(公告)日：1997-02-04

申请号：US291752

申请日：1994-08-16

申请人： Kazuo Yano ,  Tomoyuki Ishii ,  Takashi Hashimoto ,  Koichi Seki ,  Masakazu Aoki ,  Takeshi Sakata ,  Yoshinobu Nakagome ,  Kan Takeuchi

发明人： Kazuo Yano ,  Tomoyuki Ishii ,  Takashi Hashimoto ,  Koichi Seki ,  Masakazu Aoki ,  Takeshi Sakata ,  Yoshinobu Nakagome ,  Kan Takeuchi

IPC分类号： H01L21/8247 ,  G11C11/22 ,  G11C11/404 ,  G11C16/02 ,  G11C16/04 ,  G11C16/28 ,  H01L21/28 ,  H01L21/336 ,  H01L27/01 ,  H01L27/115 ,  H01L29/423 ,  H01L29/51 ,  H01L29/66 ,  H01L29/76 ,  H01L29/788 ,  H01L29/792 ,  H01L29/94 ,  H01L31/036 ,  H01L31/062 ,  H01L31/112 ,  H01L31/113

CPC分类号： B82Y10/00 ,  G11C11/22 ,  G11C11/404 ,  G11C16/02 ,  G11C16/0466 ,  G11C16/10 ,  G11C16/28 ,  H01L21/28273 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11551 ,  H01L29/42328 ,  H01L29/513 ,  H01L29/66825 ,  H01L29/7613 ,  H01L29/7888 ,  G11C2216/06 ,  G11C2216/08 ,  H01L27/1203 ,  H01L29/785

摘要： A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.

摘要翻译： 一种场效应半导体元件，其具有较少数量的元件和减小的面积，并能够自身存储数据，而不需要在低温下进行冷却;以及采用该半导体元件的存储器件。 栅极沟道电容被设置得如此小，以致捕获捕获一个电子或空穴是否可以根据半导体FET元件的电流的变化来明确且明显地被检测。 通过检测通过在陷阱中捕获电子或空穴而导致的半导体元件的阈值电压的变化，可以在室温下实现数据存储。

公开(公告)号：US07294880B2

公开(公告)日：2007-11-13

申请号：US10919471

申请日：2004-08-17

申请人： Taro Osabe ,  Tomoyuki Ishii ,  Kazuo Yano ,  Takashi Kobayashi

发明人： Taro Osabe ,  Tomoyuki Ishii ,  Kazuo Yano ,  Takashi Kobayashi

IPC分类号： H01L27/108

CPC分类号： H01L27/11521 ,  B82Y10/00 ,  G11C16/0433 ,  G11C16/0458 ,  G11C16/0483 ,  G11C16/0491 ,  G11C16/10 ,  G11C16/26 ,  G11C2216/06 ,  H01L27/115 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/7887

摘要： For providing a cheap semiconductor memory device with improving reliability by level of a cell, in the place of escaping from defects on memory cells electrically, through such as ECC, and further for providing a cell structure enabling scaling-down in the vertical direction with maintaining the reliability, in a semiconductor memory device, upon which high-speeded read-out operation is required, a charge storage region is constructed with particles made from a large number of semiconductor charge storage small regions, each being independent, thereby increasing the reliability by the cell level.

摘要翻译： 为了通过电池级提供具有提高可靠性的便宜的半导体存储器件，以代替通过诸如ECC的电存储器单元中的缺陷脱离，并且还用于提供能够在垂直方向上按比例缩小的单元结构，同时保持 在需要高速读出操作的半导体存储器件中的可靠性，电荷存储区域由大量半导体电荷存储小区域制成的粒子构成，各自独立，从而通过 细胞水平。

公开(公告)号：US06949782B2

公开(公告)日：2005-09-27

申请号：US10790183

申请日：2004-03-02

申请人： Bryan Atwood ,  Kazuo Yano ,  Tomoyuki Ishii ,  Taro Osabe ,  Kazumasa Yanagisawa ,  Takeshi Sakata

发明人： Bryan Atwood ,  Kazuo Yano ,  Tomoyuki Ishii ,  Taro Osabe ,  Kazumasa Yanagisawa ,  Takeshi Sakata

IPC分类号： G11C11/00 ,  G11C11/401 ,  G11C11/405 ,  G11C11/406 ,  G11C11/4076 ,  H01L21/8242 ,  H01L27/105 ,  H01L27/108 ,  H01L27/12

CPC分类号： H01L27/105 ,  G11C11/405 ,  G11C11/406 ,  G11C11/4076 ,  G11C2207/2281 ,  G11C2207/229 ,  H01L27/0207 ,  H01L27/108 ,  H01L27/1203

摘要： A high integration dynamic random access memory is provided by this invention. Furthermore, a write method is provided such that the cell size of two-and three-transistor gain cell memories is reduced. A dynamic memory incorporating a thin-channel transistor as the write element such that long data storage retention is achieved in the memory devices of this invention. A dynamic memory cell having low operating power and high density is also realized by this invention.

摘要翻译： 本发明提供了高集成度的动态随机存取存储器。 此外，提供了一种写入方法，使得减少了二晶体管和三晶体管增益单元存储器的单元尺寸。 一种结合了作为写入元件的薄沟道晶体管的动态存储器，使得在本发明的存储器件中实现长的数据存储保持。 通过本发明也实现了具有低操作功率和高密度的动态存储单元。

公开(公告)号：US20050023615A1

公开(公告)日：2005-02-03

申请号：US10929424

申请日：2004-08-31

申请人： Kazuo Yano ,  Tomoyuki Ishii ,  Takashi Hashimoto ,  Koichi Seki ,  Masakazu Aoki ,  Takeshi Sakata ,  Yoshinobu Nakagome ,  Kan Takeuchi

发明人： Kazuo Yano ,  Tomoyuki Ishii ,  Takashi Hashimoto ,  Koichi Seki ,  Masakazu Aoki ,  Takeshi Sakata ,  Yoshinobu Nakagome ,  Kan Takeuchi

IPC分类号： H01L21/8247 ,  G11C11/22 ,  G11C11/404 ,  G11C16/02 ,  G11C16/04 ,  G11C16/28 ,  H01L21/28 ,  H01L21/336 ,  H01L27/01 ,  H01L27/115 ,  H01L29/423 ,  H01L29/51 ,  H01L29/66 ,  H01L29/76 ,  H01L29/788 ,  H01L29/792 ,  H01L29/94 ,  H01L31/036 ,  H01L31/062 ,  H01L31/112 ,  H01L31/113

CPC分类号： B82Y10/00 ,  G11C11/22 ,  G11C11/404 ,  G11C16/02 ,  G11C16/0466 ,  G11C16/10 ,  G11C16/28 ,  G11C2216/06 ,  G11C2216/08 ,  H01L21/28273 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11551 ,  H01L27/1203 ,  H01L29/42328 ,  H01L29/513 ,  H01L29/66825 ,  H01L29/7613 ,  H01L29/785 ,  H01L29/7888

摘要： A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.

摘要翻译： 一种场效应半导体元件，其具有较少数量的元件和减小的面积，并能够自身存储数据，而不需要在低温下进行冷却;以及采用该半导体元件的存储器件。 栅极沟道电容被设置得如此小，以致捕获捕获一个电子或空穴是否可以根据半导体FET元件的电流的变化来明确且明显地被检测。 通过检测通过在陷阱中捕获电子或空穴而导致的半导体元件的阈值电压的变化，可以在室温下实现数据存储。

公开(公告)号：US20110252336A1

公开(公告)日：2011-10-13

申请号：US13125704

申请日：2008-10-22

申请人： Tomoyuki Ishii ,  Keiichi Sato

发明人： Tomoyuki Ishii ,  Keiichi Sato

IPC分类号： G06F3/01

CPC分类号： G16H40/20 ,  G16H10/60

摘要： A management information visualization device (management provider server 30) according to the present invention includes: an information registration management unit (information management unit 304) that registers service information transmitted from a service providing device (service provider server 20), associating the service information with user identification information and service content identification information which are related to the service information; and an information input/output unit (user GUI providing unit 303) that receives, from a user device, a request for viewing service information, creates management information (a top screen) including a service content list associated with service content identification information and transmits the management information to the user device, and, when one of the service content list displayed on the user device being selected by operation, searches in a management information DB300 and transmits corresponding service information to the user device.

摘要翻译： 根据本发明的管理信息可视化设备（管理提供商服务器30）包括：信息注册管理单元（信息管理单元304），其注册从服务提供设备（服务提供商服务器20）发送的服务信息，将服务信息 具有与服务信息相关的用户识别信息和服务内容识别信息; 以及信息输入/输出单元（用户GUI提供单元303），其从用户设备接收对查看服务信息的请求，创建包括与服务内容识别信息相关联的服务内容列表的管理信息（顶层屏幕）并发送 管理信息到用户装置，当通过操作选择显示在用户装置上的服务内容列表中的一个在管理信息DB300中进行搜索并将相应的服务信息发送到用户装置时。

公开(公告)号：US07622766B2

公开(公告)日：2009-11-24

申请号：US11808228

申请日：2007-06-07

申请人： Tomoyuki Ishii ,  Taro Osabe ,  Hideaki Kurata ,  Takeshi Sakata

发明人： Tomoyuki Ishii ,  Taro Osabe ,  Hideaki Kurata ,  Takeshi Sakata

IPC分类号： H01L29/788

CPC分类号： H01L27/11568 ,  B82Y10/00 ,  G11C11/5621 ,  G11C11/5671 ,  G11C16/0433 ,  G11C16/0458 ,  G11C16/0475 ,  G11C16/0491 ,  G11C2216/06 ,  H01L27/115 ,  H01L27/11521

摘要： Disclosed is a non-volatile semiconductor memory device that uses a inversion layer provided on a semiconductor substrate as a data line. The memory device can reduce variation of characteristics among memory cells and can reduce bit cost. A plurality of assist gates are formed in the upper part of a p-type well through a gate oxide film. In the upper part of an interlayer insulator that covers those assist gates are formed word lines that are used as control electrodes. The width of those word lines is, for example, 0.1 μm, and each word line is separated from its adjacent word lines by a side wall spacer that is a silicon oxide film having a thickness of about 20 nm.

摘要翻译： 公开了使用设置在半导体衬底上的反转层作为数据线的非易失性半导体存储器件。 存储器件可以减少存储器单元之间的特性变化并且可以降低位成本。 多个辅助栅极通过栅极氧化膜形成在p型阱的上部。 在覆盖这些辅助栅极的层间绝缘体的上部形成用作控制电极的字线。 这些字线的宽度例如为0.1μm，并且每个字线通过作为厚度为约20nm的氧化硅膜的侧壁间隔物与其相邻字线分开。