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公开(公告)号：US07675221B2
公开(公告)日：2010-03-09
申请号：US11489612
申请日：2006-07-20
IPC分类号： H01L41/08
CPC分类号： B06B1/0292
摘要： Disclosed is an improved construction of an ultrasonic transducer, wherein a charge is not easily injected into an insulating film even when the bottom of a membrane comes in contact with a lower electrode, and a manufacturing method thereof without using the wafer laminating technique. The ultrasonic transducer includes a lower electrode; a cavity layer formed on the first electrode; an insulating film covering the cavity layer; and an upper electrode formed on the insulating film, wherein, the cavity layer includes projections formed into an insulating film protruded from the cavity layer. In addition, an opening is formed into the upper electrode, and this upper electrode having the opening formed therein is deposited at a position not being superposed with the projections of the insulating film when seen from the top.
摘要翻译： 公开了一种超声换能器的改进结构，其中即使膜的底部与下电极接触，电荷也不容易注入到绝缘膜中，并且其制造方法不使用晶片层压技术。 超声波换能器包括下电极; 形成在所述第一电极上的空腔层; 覆盖空腔层的绝缘膜; 以及形成在所述绝缘膜上的上电极，其中，所述空腔层包括形成为从所述空腔层突出的绝缘膜的突起。 此外，在上部电极中形成开口，并且其上形成有开口的该上部电极沉积在从顶部观察时不与绝缘膜的突起重叠的位置。
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公开(公告)号：US20090189480A1
公开(公告)日：2009-07-30
申请号：US12407414
申请日：2009-03-19
CPC分类号： B06B1/0292 , Y10T29/49005
摘要： This invention provides a technique whereby, even if a step is produced by splitting a lower electrode into component elements, resistance increase of an upper electrode, damage to a membrane and decrease of dielectric strength between an upper electrode and the lower electrode, are reduced. In an ultrasonic transducer comprising plural lower electrodes, an insulation film covering the lower electrodes, plural hollow parts formed to overlap the lower electrodes on the insulation film, an insulation film filling the gaps among the hollow parts, an insulation film covering the hollow parts and insulation film, plural upper electrodes formed to overlap the hollow parts on the insulation film and plural interconnections joining them, the surfaces of the hollow parts and insulation film are flattened to the same height.
摘要翻译： 本发明提供一种技术，即使通过将下部电极分割成成分元件而产生台阶，也能够降低上部电极的电阻上升，膜的损伤以及上部电极与下部电极之间的介电强度的降低。 在包括多个下电极的超声波换能器中，覆盖下电极的绝缘膜，形成为与绝缘膜上的下电极重叠的多个中空部，填充中空部之间的间隙的绝缘膜，覆盖中空部的绝缘膜， 绝缘膜，形成为与绝缘膜上的中空部分重叠的多个上电极和连接它们的多个互连，中空部分和绝缘膜的表面被平坦化到相同的高度。
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43.发明授权公开(公告)号：US07253465B2
公开(公告)日：2007-08-07
申请号：US10817004
申请日：2004-04-05
IPC分类号： H01L29/76
CPC分类号： H01L27/11526 , H01L21/28044 , H01L21/823842 , H01L27/1052 , H01L27/10814 , H01L27/10852 , H01L27/10873 , H01L27/10894 , H01L27/10897 , H01L27/11521 , H01L27/11534 , H01L27/11546 , H01L27/12 , H01L27/1203 , H01L28/84 , H01L28/91 , H01L29/4941
摘要： In a dual polymetal gate electrode, the contact resistance at the interface of silicon films increases due to mutual-diffusion of impurities of p-type and n-type silicon films through a refractory metal and metal nitride deposited thereon. A way of inhibiting the phenomenon is carbon implantation into a refractory metal and refractory metal nitride on the boundary of p-type silicon and n-type silicon, cutting the path, or isolating it by an insulator. Thereby, mutual-diffusion of impurities through a refractory metallic film and nitride film of refractory metal is inhibited, resulting in an increase in the contact resistance of metal nitride film and silicon film and a decrease in the deviation of threshold voltage of the MISFET.
摘要翻译： 在双重多金属栅电极中，由于p型和n型硅膜的杂质通过其上沉积的难熔金属和金属氮化物的相互扩散，硅膜界面处的接触电阻增加。 抑制现象的一种方法是将碳注入到p型硅和n型硅的边界上的难熔金属和难熔金属氮化物中，切割路径，或通过绝缘体隔离。 因此，杂质通过难熔金属膜和难熔金属的氮化物膜的相互扩散被抑制，导致金属氮化物膜和硅膜的接触电阻增加以及MISFET的阈值电压的偏差的降低。
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公开(公告)号：US06573546B2
公开(公告)日：2003-06-03
申请号：US09922673
申请日：2001-08-07
申请人： Kiyonori Ohyu , Makoto Ohkura , Aritoshi Sugimoto , Yoshitaka Tadaki , Makoto Ogasawara , Masashi Horiguchi , Norio Hasegawa , Shinichi Fukada
发明人： Kiyonori Ohyu , Makoto Ohkura , Aritoshi Sugimoto , Yoshitaka Tadaki , Makoto Ogasawara , Masashi Horiguchi , Norio Hasegawa , Shinichi Fukada
IPC分类号： H01L27108
CPC分类号： H01L27/10897 , H01L27/10814 , H01L27/10894
摘要： A field oxide film 3 in a region where relief cells are formed is made wider than the field oxide film 3 in a region where normal memory cells are formed thereby to make a field relaxation layer 8r of the relief cells deeper than the field relaxation layer 8 of the normal cells, and the depletion layer of the sources and drains (n-type semiconductor regions) of the relief cells is widened to weaken the junction field.
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45.发明授权Semiconductor device with multilayer silicon oxide silicon nitride dielectric 失效具有多层氧化硅氮化硅电介质的半导体器件
公开(公告)号：US4907046A
公开(公告)日：1990-03-06
申请号：US168490
申请日：1988-03-15
申请人： Yuzuru Ohji , Osamu Kasahara , Yoshitaka Tadaki , Hiroko Kaneko , Toshiyuki Mine , Kunihiro Yagi
发明人： Yuzuru Ohji , Osamu Kasahara , Yoshitaka Tadaki , Hiroko Kaneko , Toshiyuki Mine , Kunihiro Yagi
IPC分类号： H01L27/04 , F02B3/06 , H01L21/318 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108 , H01L29/51 , H01L29/92 , H01L29/78 , H01L27/02 , H01L29/34
CPC分类号： H01L28/40 , H01L27/10808 , F02B3/06 , H01L29/51
摘要： A solid state device includes a transistor (A) and a capacitor (B). The capacitor is defined by a lower polycrystalline silicon layer or electrode (20), multiple dielectric layers (22), and an upper polycrystalline silicon layer or electrode (30). The dielectric layers are formed by vapor depositing a 3.6-18.6 nm thick layer of silicon nitride on the lower polycrystalline layer. Thicker silicon nitride layers increase the failure rate and decrease the capacitance (FIG. 8). More specifically, the silicon nitride layer is deposited on a thin, about 1 nm, oxidized film or surface (24) of the polycrystalline silicon layer. The silicon nitride layer is oxidized forming a silicon dioxide layer (28) until the silicon nitride layer is only about 3 nm thick. This forms on oxide layer that is 1-8.4 nm thick. If the silicon nitride layer is reduced below 3 nm, the polycrystalline silicon tends to oxidize rapidly reducing capacitance and increasing failure (FIG. 8).
摘要翻译： 固态器件包括晶体管（A）和电容器（B）。 电容器由下多晶硅层或电极（20），多个电介质层（22）和上多晶硅层或电极（30）限定。 电介质层通过在下多晶层上气相沉积3.6-18.6nm厚的氮化硅层形成。 较厚的氮化硅层增加故障率并降低电容（图8）。 更具体地，氮化硅层沉积在多晶硅层的薄的约1nm的氧化膜或表面（24）上。 氧化氮化硅层形成二氧化硅层（28），直到氮化硅层仅为约3nm厚。 这在氧化层上形成，厚度为1-8.4nm。 如果氮化硅层减小到3nm以下，则多晶硅容易迅速氧化，降低电容并增加故障（图8）。
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公开(公告)号：US08198782B2
公开(公告)日：2012-06-12
申请号：US12714631
申请日：2010-03-01
IPC分类号： H01L41/08
CPC分类号： B06B1/0292
摘要： An ultrasonic transducer includes a first electrode, a second electrode, an insulating film disposed between the first and second electrodes, and a cavity disposed between the first and second electrodes. The insulating film includes a projection extending in the cavity, and a portion of the cavity is disposed between the projection and the first electrode. A portion of one of the first electrode and the second electrode has an opening corresponding to a position of the projection of the insulating film when viewed in plan view.
摘要翻译： 超声换能器包括第一电极，第二电极，设置在第一和第二电极之间的绝缘膜，以及设置在第一和第二电极之间的空腔。 绝缘膜包括在空腔中延伸的突起，并且空腔的一部分设置在突起和第一电极之间。 当在平面图中观察时，第一电极和第二电极中的一个的一部分具有对应于绝缘膜的突起的位置的开口。
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公开(公告)号：US08294225B2
公开(公告)日：2012-10-23
申请号：US12407414
申请日：2009-03-19
IPC分类号： H01L21/00
CPC分类号： B06B1/0292 , Y10T29/49005
摘要： This invention provides a technique whereby, even if a step is produced by splitting a lower electrode into component elements, resistance increase of an upper electrode, damage to a membrane and decrease of dielectric strength between an upper electrode and the lower electrode, are reduced. In an ultrasonic transducer comprising plural lower electrodes, an insulation film covering the lower electrodes, plural hollow parts formed to overlap the lower electrodes on the insulation film, an insulation film filling the gaps among the hollow parts, an insulation film covering the hollow parts and insulation film, plural upper electrodes formed to overlap the hollow parts on the insulation film and plural interconnections joining them, the surfaces of the hollow parts and insulation film are flattened to the same height.
摘要翻译： 本发明提供一种技术，即使通过将下部电极分割成成分元件而产生台阶，也能够降低上部电极的电阻增加，膜的损伤以及上部电极与下部电极之间的介电强度的降低。 在包括多个下电极的超声波换能器中，覆盖下电极的绝缘膜，形成为与绝缘膜上的下电极重叠的多个中空部，填充中空部之间的间隙的绝缘膜，覆盖中空部的绝缘膜， 绝缘膜，形成为与绝缘膜上的中空部分重叠的多个上电极和连接它们的多个互连，中空部分和绝缘膜的表面被平坦化到相同的高度。
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公开(公告)号：US07512038B2
公开(公告)日：2009-03-31
申请号：US11671040
申请日：2007-02-05
IPC分类号： H04R19/00
CPC分类号： B06B1/0292 , Y10T29/49005
摘要： This invention provides a technique whereby, even if a step is produced by splitting a lower electrode into component elements, resistance increase of an upper electrode, damage to a membrane and decrease of dielectric strength between an upper electrode and the lower electrode, are reduced. In an ultrasonic transducer comprising plural lower electrodes, —an insulation film covering the lower electrodes, —plural hollow parts formed to overlap the lower electrodes on the insulation film, —an insulation film filling the gaps among the hollow parts, an insulation film covering the hollow parts and insulation film, plural upper electrodes formed to overlap the hollow parts on the insulation film and plural interconnections joining them, —the surfaces of the hollow parts and insulation film are flattened to the same height.
摘要翻译： 本发明提供一种技术，即使通过将下部电极分割成成分元件而产生台阶，也能够降低上部电极的电阻增加，膜的损伤以及上部电极与下部电极之间的介电强度的降低。 在包括多个下电极的超声波换能器中， - 覆盖下电极的绝缘膜， - 形成为与绝缘膜上的下电极重叠的 - 中空部分， - 填充中空部分之间的间隙的绝缘膜，覆盖 中空部分和绝缘膜，形成为与绝缘膜上的中空部分重叠的多个上电极和连接它们的多个互连， - 中空部分和绝缘膜的表面被平坦化到相同的高度。
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公开(公告)号：US20070052093A1
公开(公告)日：2007-03-08
申请号：US11489612
申请日：2006-07-20
IPC分类号： H01L23/48
CPC分类号： B06B1/0292
摘要： Disclosed is an improved construction of an ultrasonic transducer, wherein a charge is not easily injected into an insulating film even when the bottom of a membrane comes in contact with a lower electrode, and a manufacturing method thereof without using the wafer laminating technique. The ultrasonic transducer includes a lower electrode; a cavity layer formed on the first electrode; an insulating film covering the cavity layer; and an upper electrode formed on the insulating film, wherein, the cavity layer includes projections formed into an insulating film protruded from the cavity layer. In addition, an opening is formed into the upper electrode, and this upper electrode having the opening formed therein is deposited at a position not being superposed with the projections of the insulating film when seen from the top.
摘要翻译： 公开了一种超声换能器的改进结构，其中即使膜的底部与下电极接触，电荷也不容易注入到绝缘膜中，并且其制造方法不使用晶片层压技术。 超声波换能器包括下电极; 形成在所述第一电极上的空腔层; 覆盖空腔层的绝缘膜; 以及形成在绝缘膜上的上电极，其中，所述空腔层包括形成为从所述空腔层突出的绝缘膜的突起。 此外，在上部电极中形成开口，并且其上形成有开口的该上部电极沉积在从顶部观察时不与绝缘膜的突起重叠的位置。
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50.发明授权公开(公告)号：US06291847B1
公开(公告)日：2001-09-18
申请号：US09159754
申请日：1998-09-24
申请人： Kiyonori Ohyu , Makoto Ohkura , Aritoshi Sugimoto , Yoshitaka Tadaki , Makoto Ogasawara , Masashi Horiguchi , Norio Hasegawa , Shinichi Fukada
发明人： Kiyonori Ohyu , Makoto Ohkura , Aritoshi Sugimoto , Yoshitaka Tadaki , Makoto Ogasawara , Masashi Horiguchi , Norio Hasegawa , Shinichi Fukada
IPC分类号： H01L27108
CPC分类号： H01L27/10897 , H01L27/10814 , H01L27/10894
摘要： A field oxide film 3 in a region where relief cells are formed is made wider than the field oxide film 3 in a region where normal memory cells are formed thereby to make a field relaxation layer 8r of the relief cells deeper than the field relaxation layer 8 of the normal cells, and the depletion layer of the sources and drains (n-type semiconductor regions) of the relief cells is widened to weaken the junction field.
摘要翻译： 在形成正常存储单元的区域中，形成有浮雕单元的区域中的场氧化膜3比场氧化膜3宽，使得浮雕单元的场弛豫层8r比场弛豫层8更深 的正电池，并且补充电池的源极和漏极（n型半导体区域）的耗尽层变宽以削弱结场。
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