公开(公告)号：US06989510B2

公开(公告)日：2006-01-24

申请号：US10379060

申请日：2003-03-04

申请人： Yukio Yamaoka ,  Geun Chul Song ,  Yong Kim

发明人： Yukio Yamaoka ,  Geun Chul Song ,  Yong Kim

IPC分类号： B23K35/02

CPC分类号： B23K35/40 ,  B23K35/0261 ,  C21D8/06

摘要： A non-copper-plated solid wire for CO2 gas shielded arc welding. The non-copper-plated solid wire for CO2 gas shielded arc welding with excellent feedability ensures a reduced amount of generated spatters when welded at a relatively low current area, resulting from controlling the ten point average roughness (Rz) of the wire surface to 0.10 to 9.00 μm and the Vickers micro-hardness of the wire surface (Hv(1g)) to 125 to 310. Therefore, the welding operation can be carried out with a high efficiency to produce a weld of good quality.

摘要翻译： 一种用于CO 2气保护电弧焊的非镀铜实心线。 用于具有优异进给能力的CO 2气保护电弧焊的非镀铜实心线确保了在相对较低电流区域焊接时产生的溅射量减少，这是由于控制十点平均粗糙度（ Rz）为0.10〜9.00μm，线表面的维氏显微硬度（Hv（1g））为125〜310。因此，可以高效率地进行焊接操作，以产生焊接 高品质。

公开(公告)号：US20060011297A1

公开(公告)日：2006-01-19

申请号：US11181526

申请日：2005-07-14

申请人： Yong Kim

发明人： Yong Kim

IPC分类号： C23F1/00 ,  C23C16/00 ,  H01L21/306

CPC分类号： H01L21/67167 ,  H01L21/67184

摘要： Disclosed herein is a semiconductor manufacturing apparatus. The apparatus comprises a transfer module, first and second process modules equipped to adjacent first and second faces of the transfer module while defining an acute angle to the first and second faces of the transfer module, respectively, and a load-lock chamber connected to a third face of the transfer module. The adjacent process modules are disposed parallel to each other. As such, the process modules are close to or in contact with each other on the transfer module, thereby reducing an area occupied by the apparatus without reducing manufacturing efficiency. A source supply unit can be enlarged towards an adjacent face of the adjacent process modules, so that various source materials for forming semiconductor chips can be effectively supplied to the semiconductor manufacturing apparatus through the enlarged source supply unit.

摘要翻译： 这里公开了一种半导体制造装置。 该装置包括传送模块，第一和第二处理模块，其分别配置到传送模块的相邻的第一和第二面，同时分别限定与传送模块的第一和第二面的锐角，以及连接到传送模块的加载锁定室 传输模块的第三面。 相邻的处理模块彼此平行设置。 这样，处理模块在传送模块上彼此接近或接触，从而减少了设备占用的面积而不降低制造效率。 源极供给单元可以相对于相邻的处理模块的相邻面扩大，从而能够通过放大源供给单元将用于形成半导体芯片的各种源材料有效地供给到半导体制造装置。

公开(公告)号：US20050265709A1

公开(公告)日：2005-12-01

申请号：US10935360

申请日：2004-09-08

申请人： Hyung Kim ,  Yong Kim

发明人： Hyung Kim ,  Yong Kim

IPC分类号： G03B7/17 ,  G03B15/02 ,  G03B15/03 ,  G03B15/05 ,  H01S3/00 ,  H04N5/225 ,  H04N101/00

CPC分类号： H04N5/2256 ,  G03B15/05 ,  G03B2215/0567 ,  H04N5/23241

摘要： Disclosed herein is a device for driving a LED for a flash of a camera, such as a digital camera or a camera of a mobile phone, which is capable of driving the LED in two modes to reduce power consumption. The LED drive device comprises the LED, a continuous low current driver for continuously supplying current which is lower than or equal to rated current of the LED to the LED, a high-current pulse driver for supplying current which is higher than the rated current of the LED to the LED for a predetermined period of time, and a mode selector for selecting one of the continuous low current driver and the high-current pulse driver to drive the LED. According to the present invention, it is possible to prevent unnecessary power consumption and deterioration of reliability of the LED, and obtain an image of brighter picture quality.

摘要翻译： 这里公开了一种用于驱动诸如数字照相机或移动电话的照相机的照相机的闪光灯的LED的装置，其能够以两种模式驱动LED以降低功耗。 LED驱动装置包括LED，连续的低电流驱动器，用于连续向LED提供低于或等于LED的额定电流的电流;高电流脉冲驱动器，用于提供高于LED的额定电流的电流 LED到LED预定时间段，以及模式选择器，用于选择连续低电流驱动器和大电流脉冲驱动器之一来驱动LED。 根据本发明，可以防止不必要的电力消耗和LED的可靠性的劣化，并且获得更亮的图像质量的图像。

公开(公告)号：US20050263783A1

公开(公告)日：2005-12-01

申请号：US10944745

申请日：2004-09-21

申请人： Jae Lee ,  Yong Kim ,  Je Kim

发明人： Jae Lee ,  Yong Kim ,  Je Kim

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L33/06

摘要： The present invention provides a nitride semiconductor light-emitting device comprising a first conductive nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer, and having at least one quantum well layer and at least one quantum barrier layer alternatively laminated; and a second conductive nitride semiconductor layer formed on the active layer, wherein at least one of the quantum well layer and quantum barrier layer in the active layer is doped with elemental Al in a concentration of less than 1%.

摘要翻译： 本发明提供了一种氮化物半导体发光器件，其包括第一导电氮化物半导体层; 形成在所述第一导电氮化物半导体层上并且具有至少一个量子阱层和至少一个量子势垒层交替叠层的有源层; 以及形成在有源层上的第二导电氮化物半导体层，其中有源层中的量子阱层和量子势垒层中的至少一个掺杂有浓度小于1％的元素Al。

公开(公告)号：US20050253978A1

公开(公告)日：2005-11-17

申请号：US11019946

申请日：2004-12-23

申请人： Gee Sung Chae ,  Woo Hyun Kim ,  Yong Kim ,  Jin Kim

发明人： Gee Sung Chae ,  Woo Hyun Kim ,  Yong Kim ,  Jin Kim

IPC分类号： H01L29/786 ,  G02F1/1343 ,  G02F1/136

CPC分类号： G02F1/134363 ,  H01L27/124 ,  H01L27/1288

摘要： A thin film transistor array substrate includes a first conductive pattern group including a gate electrode of a thin film transistor and a gate line connected to the gate electrode; a semiconductor pattern defining a channel of the thin film transistor; a second conductive pattern group including source and drain electrodes of the thin film transistor and a data line crossing the gate line, a pixel area being defined by the data line crossing the gate line; a third conductive pattern group having a pixel electrode connected to the thin film transistor; and at least one dummy pattern disposed between at least one of the first to third conductive pattern groups and an adjacent one of the semiconductor patterns.

摘要翻译： 薄膜晶体管阵列基板包括：第一导电图案组，其包括薄膜晶体管的栅电极和连接到栅电极的栅极线; 限定薄膜晶体管的沟道的半导体图案; 包括薄膜晶体管的源极和漏极的第二导电图案组和与栅极线交叉的数据线，像素区域由与栅极线交叉的数据线限定; 具有连接到薄膜晶体管的像素电极的第三导电图案组; 以及设置在所述第一至第三导电图案组中的至少一个与所述半导体图案中的相邻一个之间的至少一个虚设图案。

公开(公告)号：US20050198912A1

公开(公告)日：2005-09-15

申请号：US11078538

申请日：2005-03-11

申请人： Dae Kim ,  Seok Hong ,  Jae Jeon ,  Ho Kim ,  Hyun Park ,  Un Paik ,  Jae Park ,  Yong Kim

发明人： Dae Kim ,  Seok Hong ,  Jae Jeon ,  Ho Kim ,  Hyun Park ,  Un Paik ,  Jae Park ,  Yong Kim

IPC分类号： B24D3/02 ,  C08J3/14 ,  H01L21/304

CPC分类号： B24B37/044 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

摘要： Disclosed herein is a polishing slurry for chemical mechanical polishing. The polishing slurry comprises polishing particles, which have a particle size distribution including separated fine and large polishing particle peaks. The polishing slurry also comprises polishing particles, which have a median size of 50-150 nm. The present invention provides the slurry having an optimum polishing particle size, in which the polishing particle size is controlled and which is useful to produce semiconductors having fine design rules by changing the production conditions of the slurry. The present invention also provides the polishing slurry and a method of producing the same, in which a desirable CMP removal rate is assured and scratches are suppressed by controlling a polishing particle size distribution, and a method of polishing a substrate.

摘要翻译： 本文公开了用于化学机械抛光的抛光浆料。 抛光浆料包括抛光颗粒，其具有包括分离的精细和大的抛光颗粒峰的粒度分布。 抛光浆料还包括中值粒径为50-150nm的抛光颗粒。 本发明提供了具有最佳抛光粒度的浆料，其中抛光粒度被控制，并且通过改变浆料的生产条件，可用于制备具有精细设计规则的半导体。 本发明还提供了研磨浆料及其制造方法，其中通过控制抛光粒度分布来确保理想的CMP去除速率和抑制刮痕，以及抛光基材的方法。

公开(公告)号：US20050187053A1

公开(公告)日：2005-08-25

申请号：US11019252

申请日：2004-12-17

申请人： Yong Kim

发明人： Yong Kim

IPC分类号： E04H6/12 ,  F16H7/08 ,  F16H61/12 ,  F16H9/00 ,  F16H7/12

CPC分类号： F16H7/08 ,  F16H61/12 ,  F16H2007/0806 ,  F16H2007/0861

摘要： A chain monitoring device is provided with a base, guiding posts fixed to the base, a member movable along the guiding posts, a chain sprocket rotatable with a chain with its teeth being engaged into the chain, springs for resiliently urging the member for the engagement of the teeth into the chain, and a sensor detecting a change in position of the member. The chain sprocket is rotatably mounted to the member.

摘要翻译： 链条监控装置设置有基座，固定到基座的引导柱，可沿着引导柱运动的构件，可链轮转动的链轮，其齿啮合到链条中，弹簧用于弹性地推动构件进行接合 的齿，以及检测构件的位置变化的传感器。 链轮可旋转地安装在构件上。

公开(公告)号：US20050184687A1

公开(公告)日：2005-08-25

申请号：US10896278

申请日：2004-07-22

申请人： Eon Hong ,  Kyeong Park ,  Ki Choi ,  Sung Ki ,  Tae Kwak ,  Jong Heo ,  Yong Kim

发明人： Eon Hong ,  Kyeong Park ,  Ki Choi ,  Sung Ki ,  Tae Kwak ,  Jong Heo ,  Yong Kim

IPC分类号： F04B49/06 ,  F04B35/04 ,  F04B49/00 ,  F04B49/10 ,  F25B1/00 ,  F25B9/00 ,  F25D29/00 ,  H02P7/00 ,  H02P7/08 ,  H02P25/24 ,  H02P29/00

CPC分类号： F04B35/045 ,  F04B2203/0401 ,  F04B2203/0402 ,  H02P25/24

摘要： An apparatus and a method for controlling an operation of a compressor capable of preventing an under stroke or an overstroke of a compressor, occurring due to a variation value of a power voltage applied to a motor of the compressor includes a control unit outputting a selection signal according to a variation value of a power voltage applied to the motor of the compressor; capacitors connected to the motor; and a switching unit selectively varying capacitance of the capacitors based on the selection signal.

摘要翻译： 用于控制压缩机的操作的装置和方法，其能够防止由于施加到压缩机的电动机的电力电压的变化值而发生的压缩机的下冲程或过冲，包括输出选择信号的控制单元 根据施加到压缩机的电动机的电力电压的变化值; 连接电机的电容器; 以及基于选择信号选择性地改变电容器的电容的开关单元。

公开(公告)号：US20050142817A1

公开(公告)日：2005-06-30

申请号：US10884954

申请日：2004-07-07

申请人： Choong Sohn ,  Yong Kim ,  Jin Lee ,  Young Ko ,  Choong Chung ,  Chi Hwang ,  Yoon Song

发明人： Choong Sohn ,  Yong Kim ,  Jin Lee ,  Young Ko ,  Choong Chung ,  Chi Hwang ,  Yoon Song

IPC分类号： C30B1/00 ,  H01L21/20 ,  H01L21/26 ,  H01L21/268 ,  H01L21/324 ,  H01L21/36 ,  H01L21/42 ,  H01L21/477

CPC分类号： H01L21/0268 ,  H01L21/2026 ,  H01L21/268

摘要： Provided is a method for planarizing a polysilicon surface grown by means of a sequential lateral solidification method, which comprises the steps of: crystallizing an amorphous silicon having a predetermined thickness formed on a substrate into the polysilicon layer by means of the sequential lateral solidification method; and planarizing the polysilicon layer by means of a laser having an energy density for converting partially melted polysilicon into fully melted polysilicon, so that electrical characteristics of element may be improved when the polysilicon thin film transistor is fabricated using the planarization process.

摘要翻译： 提供了一种通过顺序侧向固化方法平坦化生长的多晶硅表面的方法，其包括以下步骤：通过顺序侧向固化方法将形成在衬底上的具有预定厚度的非晶硅结晶成多晶硅层; 并且通过具有用于将部分熔融的多晶硅转化为完全熔化的多晶硅的能量密度的激光来平坦化多晶硅层，使得当使用平坦化工艺制造多晶硅薄膜晶体管时，可以提高元件的电特性。

公开(公告)号：US20050142707A1

公开(公告)日：2005-06-30

申请号：US10909457

申请日：2004-08-03

申请人： Yong Kim ,  Choong Sohn ,  Jin Lee

发明人： Yong Kim ,  Choong Sohn ,  Jin Lee

IPC分类号： H01L29/786 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/423 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L21/268 ,  H01L29/42384 ,  H01L29/66757

摘要： Provided is a method of crystallizing/activating a polysilicon layer and a method of fabricating a thin film transistor having the same polysilicon layer, in which when a gate material is patterned to form a gate electrode and define source/drain regions, the gate material on source/drain regions partially remains, so that crystallizing and activating processes are performed at the same time.

摘要翻译： 提供了一种使多晶硅层结晶/活化的方法和制造具有相同多晶硅层的薄膜晶体管的方法，其中当栅极材料被图案化以形成栅电极并限定源极/漏极区域时，栅极材料在 源极/漏极区域部分保留，从而同时进行结晶和激活过程。