公开(公告)号：US08618520B2

公开(公告)日：2013-12-31

申请号：US13547942

申请日：2012-07-12

申请人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

发明人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

IPC分类号： G21K5/00

CPC分类号： H04L29/06 ,  G01N23/225 ,  H01J37/256 ,  H01J37/3056 ,  H01J2237/20 ,  H01J2237/202 ,  H01J2237/31745 ,  H04L67/16 ,  H04L69/329

摘要： An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

公开(公告)号：US07725278B2

公开(公告)日：2010-05-25

申请号：US11648615

申请日：2007-01-03

申请人： Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Muneyuki Fukuda ,  Kaoru Umemura

发明人： Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Muneyuki Fukuda ,  Kaoru Umemura

IPC分类号： G01N37/00

CPC分类号： G05B23/0264 ,  H01J2237/208

摘要： After completion of an arbitrary device process, an apparatus for micro-sample extraction extracts a part of a wafer as a micro-sample of a size equal to or larger than a repetition pattern with a probe and places the extracted micro-sample to a micro-sample storage, and the micro-sample storage is stored into an apparatus for micro-sample storage. The wafer is subjected to a post process and an observation desired position is determined in response to a failure analysis requirement. After that, the micro-sample is unloaded from the micro-sample storage by an apparatus for additional processing of the micro-sample and is placed onto an observation sample holder. By performing an additional process in the observation desired position, a failure analysis sample is prepared, and analysis information obtained by an apparatus for failure analysis is output.

摘要翻译： 在完成任意装置处理之后，用于微量样品提取的装置用探针提取一部分晶片作为等于或大于重复图案的尺寸的微量样品，并将提取的微量样品放置在微型 样品存储，并且微量样品储存储存在用于微量样品储存的装置中。 对晶片进行后处理，并且响应于故障分析要求确定观察期望位置。 之后，通过用于微量样品的附加处理的装置从微量样品储存器中卸载微量样品，并将其放置在观察样品架上。 通过在观察所需位置执行附加处理，准备故障分析样本，并输出通过故障分析装置得到的分析信息。

公开(公告)号：US20070112533A1

公开(公告)日：2007-05-17

申请号：US11648615

申请日：2007-01-03

申请人： Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Muneyuki Fukuda ,  Kaoru Umemura

发明人： Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Muneyuki Fukuda ,  Kaoru Umemura

IPC分类号： G06F19/00

CPC分类号： G05B23/0264 ,  H01J2237/208

摘要： After completion of an arbitrary device process, an apparatus for micro-sample extraction extracts a part of a wafer as a micro-sample of a size equal to or larger than a repetition pattern with a probe and places the extracted micro-sample to a micro-sample storage, and the micro-sample storage is stored into an apparatus for micro-sample storage. The wafer is subjected to a post process and an observation desired position is determined in response to a failure analysis requirement. After that, the micro-sample is unloaded from the micro-sample storage by an apparatus for additional processing of the micro-sample and is placed onto an observation sample holder. By performing an additional process in the observation desired position, a failure analysis sample is prepared, and analysis information obtained by an apparatus for failure analysis is output.

摘要翻译： 在完成任意装置处理之后，用于微量样品提取的装置用探针提取一部分晶片作为等于或大于重复图案的尺寸的微量样品，并将提取的微量样品放置在微型 样品存储，并且微量样品储存储存在用于微量样品储存的装置中。 对晶片进行后处理，并且响应于故障分析要求确定观察期望位置。 之后，通过用于微量样品的附加处理的装置从微量样品储存器中卸载微量样品，并将其放置在观察样品架上。 通过在观察所需位置执行附加处理，准备故障分析样本，并输出通过故障分析装置得到的分析信息。

公开(公告)号：US07200506B2

公开(公告)日：2007-04-03

申请号：US10339356

申请日：2003-01-10

申请人： Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Muneyuki Fukuda ,  Kaoru Umemura

发明人： Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Muneyuki Fukuda ,  Kaoru Umemura

IPC分类号： G01N37/00

CPC分类号： G05B23/0264 ,  H01J2237/208

摘要： After completion of an arbitrary device process, an apparatus for micro-sample extraction extracts a part of a wafer as a micro-sample of a size equal to or larger than a repetition pattern with a probe and places the extracted micro-sample to a micro-sample storage, and the micro-sample storage is stored into an apparatus for micro-sample storage. The wafer is subjected to a post process and an observation desired position is determined in response to a failure analysis requirement. After that, the micro-sample is unloaded from the micro-sample storage by an apparatus for additional processing of the micro-sample and is placed onto an observation sample holder. By performing an additional process in the observation desired position, a failure analysis sample is prepared, and analysis information obtained by an apparatus for failure analysis is output.

公开(公告)号：US06794663B2

公开(公告)日：2004-09-21

申请号：US10699853

申请日：2003-11-04

申请人： Hiroyasu Shichi ,  Tohru Ishitani ,  Hidemi Koike ,  Kaoru Umemura ,  Eiichi Seya ,  Mitsuo Tokuda ,  Satoshi Tomimatsu ,  Hideo Kashima ,  Muneyuki Fukuda

发明人： Hiroyasu Shichi ,  Tohru Ishitani ,  Hidemi Koike ,  Kaoru Umemura ,  Eiichi Seya ,  Mitsuo Tokuda ,  Satoshi Tomimatsu ,  Hideo Kashima ,  Muneyuki Fukuda

IPC分类号： G21G500

CPC分类号： G01N23/20 ,  B23K15/0006 ,  B23K15/0013 ,  G01N1/286 ,  H01J2237/3114 ,  H01J2237/31745

摘要： A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.

公开(公告)号：US06734687B1

公开(公告)日：2004-05-11

申请号：US09936941

申请日：2001-12-04

申请人： Tohru Ishitani ,  Hidemi Koike ,  Aritoshi Sugimoto ,  Isamu Sekihara ,  Kaoru Umemura ,  Satoshi Tomimatsu ,  Junzo Azuma

发明人： Tohru Ishitani ,  Hidemi Koike ,  Aritoshi Sugimoto ,  Isamu Sekihara ,  Kaoru Umemura ,  Satoshi Tomimatsu ,  Junzo Azuma

IPC分类号： G01R31302

CPC分类号： G01R31/311 ,  G01R31/2851 ,  G01R31/303

摘要： Disconnection defects, short-circuit defects and the like in wiring patters of submicron sizes within TEGs (a square of 1 to 2.5 mm for each) numerously arranged in a large chip (a square of 20 to 25 mm) can be inspected with respect to all the TEGs, with good operability, high reliability and high efficiency. A conductor probe for applying voltage to the wiring patterns by mechanical contact is composed of synchronous type conductor probe that synchronizes with movement of a sample stage (16), and fixed type conductor probe means (21) that is relatively fixed to an FIB generator (10). Positions of probe tips are superimposed to an SIM image and displayed on a display unit (19).

摘要翻译： 可以检查大尺寸芯片（20〜25mm的正方形）内的TEG内的亚微米尺寸（每个为1〜2.5mm的正方形）的接线图案中的断路缺陷，短路缺陷等。 所有的TEG，具有良好的可操作性，高可靠性和高效率。 用于通过机械接触对布线图案施加电压的导体探针由与样品台（16）的移动同步的同步型导体探针和相对固定于FIB发生器的固定型导体探针装置（21）组成， 10）。 探针尖端的位置叠加到SIM图像上并显示在显示单元上（19）。

公开(公告)号：US08481980B2

公开(公告)日：2013-07-09

申请号：US12108037

申请日：2008-04-23

申请人： Hiroyasu Shichi ,  Satoshi Tomimatsu ,  Kaoru Umemura ,  Noriyuki Kaneoka ,  Koji Ishiguro

发明人： Hiroyasu Shichi ,  Satoshi Tomimatsu ,  Kaoru Umemura ,  Noriyuki Kaneoka ,  Koji Ishiguro

IPC分类号： G21K5/10

CPC分类号： C23C14/3442 ,  H01J27/10 ,  H01J37/08 ,  H01J37/28 ,  H01J37/3023 ,  H01J37/3056 ,  H01J2237/006 ,  H01J2237/057 ,  H01J2237/0807 ,  H01J2237/0825 ,  H01J2237/0827 ,  H01J2237/31745 ,  H01J2237/31749

摘要： An ion beam machining and observation method relevant to a technique of cross sectional observation of an electronic component, through which a sample is machined by using an ion beam and a charged particle beam processor capable of reducing the time it takes to fill up a processed hole with a high degree of flatness at the filled area. The observation device is capable of switching the kind of gas ion beam used for machining a sample with the kind of a gas ion beam used for observing the sample. To implement the switch between the kind of a gas ion beam used for sample machining and the kind of a gas ion beam used for sample observation, at least two gas introduction systems are used, each system having a gas cylinder a gas tube, a gas volume control valve, and a stop valve.

摘要翻译： 一种与电子部件的横截面观察技术有关的离子束加工和观察方法，通过使用离子束加工样品的电子部件和能够减少填充加工孔的时间的带电粒子束处理器 在填充区域具有高度的平整度。 观察装置能够切换用于用于观察样品的气体离子束的种类来加工样品的气体离子束的种类。 为了实现用于样品加工的气体离子束的种类和用于样品观察的气体离子束的种类之间的切换，使用至少两个气体导入系统，每个系统具有气瓶，气体管，气体 音量控制阀和截止阀。

公开(公告)号：US07897936B2

公开(公告)日：2011-03-01

申请号：US11822386

申请日：2007-07-05

申请人： Hiroyasu Shichi ,  Tohru Ishitani ,  Hidemi Koike ,  Kaoru Umemura ,  Eiichi Seya ,  Mitsuo Tokuda ,  Satoshi Tomimatsu ,  Hideo Kashima ,  Muneyuki Fukuda

发明人： Hiroyasu Shichi ,  Tohru Ishitani ,  Hidemi Koike ,  Kaoru Umemura ,  Eiichi Seya ,  Mitsuo Tokuda ,  Satoshi Tomimatsu ,  Hideo Kashima ,  Muneyuki Fukuda

IPC分类号： G21K1/00

CPC分类号： G01N23/20 ,  B23K15/0006 ,  B23K15/0013 ,  G01N1/286 ,  H01J2237/3114 ,  H01J2237/31745

摘要： A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.

摘要翻译： 相对于样品表面以小于90度的入射角照射具有聚焦离子束的样品的样品制造方法，消除作为目标的微量样品的周边区域，将样品台围绕线段 垂直于样品表面作为转动轴线，同时在样品表面上的入射角被固定的同时用聚焦离子束照射样品，并分离微量样品或制备待分离的微量样品。 一种样品制造装置，用于通过扫描和偏转离子束来形成保持在样品台上的样品中的样品部分，其中离子束的光轴与样品台的表面之间的角度被固定并形成样品 通过转动样品台来控制切片。

公开(公告)号：US07888639B2

公开(公告)日：2011-02-15

申请号：US11980654

申请日：2007-10-31

申请人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

发明人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

IPC分类号： G01N23/00

CPC分类号： H04L29/06 ,  G01N23/225 ,  H01J37/256 ,  H01J37/3056 ,  H01J2237/20 ,  H01J2237/202 ,  H01J2237/31745 ,  H04L67/16 ,  H04L69/329

摘要： An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

摘要翻译： 本发明的目的是实现一种用于处理和观察微分样品的方法和装置，其能够以高分辨率，高精度和高产量在水平和垂直方向观察晶片的截面而不分裂任何作为样品的晶片 。 在本发明的装置中，在一个真空容器中包括聚焦离子束光学系统和电子光学系统，并且通过用带电粒子束的成形处理分离包含样品的所需区域的微小样品，并且在那里 被包括用于提取分离的微小样本的操纵器和用于独立于晶片样品台驱动操纵器的操纵器控制器。

公开(公告)号：US07700931B2

公开(公告)日：2010-04-20

申请号：US11674262

申请日：2007-02-13

申请人： Hiroyasu Shichi ,  Satoshi Tomimatsu ,  Noriyuki Kaneoka ,  Kaoru Umemura ,  Koji Ishiguro

发明人： Hiroyasu Shichi ,  Satoshi Tomimatsu ,  Noriyuki Kaneoka ,  Kaoru Umemura ,  Koji Ishiguro

IPC分类号： G21K5/10 ,  H01J37/08 ,  A61N5/00 ,  G21G5/00 ,  G21K7/00 ,  G01N23/00

CPC分类号： H01J37/261 ,  H01J37/20 ,  H01J37/3045 ,  H01J2237/08 ,  H01J2237/20207 ,  H01J2237/24528 ,  H01J2237/28 ,  H01J2237/31713 ,  H01J2237/3174 ,  H01J2237/31749

摘要： The present invention provides an ion beam processing technology for improving the precision in processing a section of a sample using an ion beam without making a processing time longer than a conventionally required processing time, and for shortening the time required for separating a micro test piece without breaking the sample or the time required for making preparations for the separation. An ion beam processing apparatus is structured so that an axis along which an ion beam is drawn out of an ion source and an ion beam irradiation axis along which the ion beam is irradiated to a sample mounted on a first sample stage will meet at an angle. Furthermore, the ion beam processing apparatus has a tilting ability to vary an angle of irradiation, at which the ion beam is irradiated to the sample, by rotating a second sample stage, on which a test piece extracted from the sample by performing ion beam processing is mounted, about the tilting axis of the second sample stage. The ion beam processing apparatus is structured so that a segment drawn by projecting the axis, along which the ion beam is drawn out of the ion source, on a plane perpendicular to the ion beam irradiation axis can be at least substantially parallel to a segment drawn by projecting the tilting axis of the second sample stage on the plane perpendicular to the ion beam irradiation axis.

摘要翻译： 本发明提供了一种离子束处理技术，用于提高使用离子束处理样品的一部分的精度，而不需要比常规所需的处理时间长的处理时间，并且缩短了分离微测试件所需的时间，而没有 打破样品或准备分离所需的时间。 离子束处理装置被构造成使得离子束从离子源拉出的轴和离子束照射到安装在第一样品台上的样品的离子束照射轴将以一定角度相遇 。 此外，离子束处理装置具有通过旋转第二样品台而使离子束照射到样品上的照射角度的倾斜能力，通过进行离子束处理从样品中提取试验片 围绕第二样品台的倾斜轴安装。 离子束处理装置被构造成使得通过将离子束从离子源拉出的轴在垂直于离子束照射轴线的平面上突出的拉伸而绘制的区段可以至少基本上平行于拉伸的区段 通过将第二样品台的倾斜轴投影在垂直于离子束照射轴的平面上。